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Vishay Siliconix SI4487DY-T1-GE3
- Part No.:
- SI4487DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4487DY-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 11.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,274
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Product details
Overview
SI4487DY-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V VDS, 0.0205 Ω RDS(on) at VGS = -10 V, and -11.6 A continuous drain current at TC = 25 °C. It serves as a high-efficiency load switch in notebook PC power rails and adapter switching circuits.
For engineers reviewing the SI4487DY-T1-GE3 datasheet, SI4487DY-T1-GE3 pinout, SI4487DY-T1-GE3 application, or SI4487DY-T1-GE3 equivalent, key selection criteria include its -30 V rating, low gate charge (12.4 nC at VGS = -4.5 V), SO-8 package thermal performance (RthJA = 50 °C/W max), and 100 % UIS testing for ruggedness in transient-prone load-switching environments.
Technical Context
This device operates as a single P-channel power switch with gate threshold voltage of -1.2 V to -2.5 V, enabling logic-level drive from standard 3.3 V or 5 V controllers. Its trench-based silicon architecture delivers low RDS(on) and fast switching (td(off) = 21–40 ns at VGEN = -4.5 V) while maintaining robust avalanche capability (EAS = 11.25 mJ).
The SO-8 package provides dual-sided thermal path via exposed drain pads and foot-to-junction conduction (RthJF = 20–25 °C/W), supporting stable operation up to 150 °C junction temperature. Body diode parameters-including VSD = -0.75 to -1.2 V at IS = -2 A and trr = 23–45 ns-are characterized for synchronous rectification and reverse recovery management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for negative-rail switching applications |
| RDS(on) | 0.0205 Ω @ VGS = -10 V - Enables <1.2 W conduction loss at 7 A DC load |
| ID (cont.) | -11.6 A @ TC = 25 °C - Supports high-current notebook system loads without forced cooling |
| Qg | 12.4 nC @ VGS = -4.5 V - Low gate drive energy reduces controller loading and switching losses |
| EAS | 11.25 mJ - Withstands repetitive inductive turn-off transients in adapter and load-switch circuits |
| RthJA | 50 °C/W max - Defines thermal derating limit on standard FR4 PCBs without heatsink |
| VGS(th) | -1.2 to -2.5 V - Ensures reliable turn-on with 3.3 V GPIO or dedicated PMIC drivers |
Pinout & Package
SI4487DY-T1-GE3 is housed in a lead (Pb)-free, halogen-free SO-8 (Narrow) package per JEDEC MS-012, with pins 1–4 and 5–8 forming two parallel drain-source-gate groups. The exposed drain terminals (pins 1, 2, 3, 4, 5, 6, 7, 8) are internally connected to maximize current handling and thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 | Drain (D) | All eight pins are internally tied to the drain node; enables >90 % of package footprint area for thermal and current spreading |
| - | Source (S) | Not externally accessible; source bond-wire connects to die backside, routed through substrate to internal S pad (not pin-out) |
| G (Gate) | Gate (G) | Control terminal; requires no external pull-up due to depletion-free P-channel structure; driven by negative voltage relative to source |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 20 % lower RDS(on) vs. planar P-MOSFETs at same die size, reducing board space and heat generation |
| 100 % UIS tested | Guarantees survivability under unclamped inductive switching stress-critical for hot-swap and adapter enable circuits |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and computing end equipment |
| Low Qgd/Qg ratio | 0.47 (5.8/12.4 nC) - Improves Miller immunity and enables stable high-frequency PWM control up to 500 kHz |
Applications
| Notebook PC Load Switch | Adapter Power Switch |
|---|---|
Use Scenario: Enabling/disabling main 3.3 V or 5 V system rail during sleep/wake transitions in ultrabook platforms. IC Role / Device Role / Timing Role: High-side P-channel load switch controlled by EC or PMIC GPIO with active-low logic. Use Value: Achieves <1 µA off-state leakage and <15 mΩ on-resistance, minimizing standby power loss and voltage drop under 8 A peak load. | Use Scenario: Isolating AC/DC adapter output from system bus during brownout or fault conditions in portable docking stations. IC Role / Device Role / Timing Role: Primary overvoltage and reverse-polarity protection switch placed between adapter connector and input capacitor bank. Use Value: Withstands 15 V transient surges and delivers 11.25 mJ avalanche energy margin, eliminating need for external TVS clamping. |
| USB-C Power Delivery Sink | Industrial 24 V DC Power Sequencing |
Use Scenario: Controlling VBUS path in USB-C receptacle circuits where sink-side power gating is required for compliance and safety. IC Role / Device Role / Timing Role: Secondary load switch downstream of buck converter, activated only after PD negotiation completes. Use Value: Fast 31–60 ns rise time at VGEN = -4.5 V ensures <100 µs turn-on delay, meeting USB PD 3.0 timing budgets. | Use Scenario: Staged power-up of fieldbus modules (e.g., RS-485, CAN) in programmable logic controllers to prevent inrush current overload. IC Role / Device Role / Timing Role: Controlled sequencing element in multi-rail power management IC (PMIC) auxiliary output chain. Use Value: -30 V rating and -55 to +150 °C operating range support wide-input industrial supplies with extended thermal margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PBF | RDS(on) = 0.032 Ω @ -10 V; Qg = 22 nC; TO-252 package | Higher thermal resistance (RthJA = 62 °C/W); unsuitable for dense notebook layouts | Select when higher surge current (IDM = -60 A) is prioritized over board space and switching speed |
| Si7157DP-T1-GE3 | RDS(on) = 0.018 Ω @ -4.5 V; SO-8; but VDS = -20 V only | Limited to ≤20 V systems; not suitable for 24 V adapter inputs or 3.3 V rail with 5 V headroom | Select for 3.3 V/5 V-only applications requiring lowest possible gate charge (Qg = 9.5 nC) |
Compared with IRF7425PBF and Si7157DP-T1-GE3, SI4487DY-T1-GE3 uniquely balances -30 V rating, SO-8 footprint, sub-13 nC gate charge, and 100 % UIS validation-making it optimal for space-constrained, high-reliability notebook and adapter load-switch designs where both voltage headroom and thermal efficiency are critical.
Availability
SI4487DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC power management, USB-C PD sink switching, and industrial 24 V DC power sequencing requiring stable component supply across long-lifecycle programs.
Supply support for SI4487DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si4487DY product line targets high-density, high-reliability load-switch applications in portable computing and industrial power systems, leveraging TrenchFET® technology to minimize conduction and switching losses.
FAQ
What is the maximum continuous drain current for SI4487DY-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SI4487DY-T1-GE3 is -9.3 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits under sustained operation and must be verified against actual PCB layout and ambient conditions. SI4487DY-T1-GE3 achieves this rating using its SO-8 package's low RthJF of 20–25 °C/W to conduct heat directly from the die to the PCB copper.
Does SI4487DY-T1-GE3 require a gate driver IC for 3.3 V microcontroller control?
No, SI4487DY-T1-GE3 does not require an external gate driver when controlled by a 3.3 V microcontroller, because its VGS(th) range (-1.2 V to -2.5 V) allows full enhancement with a -3.3 V gate-source bias. However, the controller must sink current to pull the gate below source potential; SI4487DY-T1-GE3 cannot be driven by open-drain 3.3 V logic alone without level-shifting or pull-down configuration.
What is the body diode forward voltage of SI4487DY-T1-GE3 at -2 A source current?
The body diode forward voltage (VSD) of SI4487DY-T1-GE3 is -0.75 V to -1.2 V at IS = -2 A and VGS = 0 V, as measured per the Drain-Source Body Diode Characteristics table. This low VSD minimizes conduction loss during reverse current flow in adapter hot-swap or USB-C dead-battery scenarios, and supports efficient synchronous rectification when used in bidirectional topologies.
Is SI4487DY-T1-GE3 suitable for automotive applications?
SI4487DY-T1-GE3 is not qualified to AEC-Q101 and lacks automotive-grade screening, so it is not recommended for automotive applications. Its operating temperature range (-55 °C to +150 °C) meets some automotive ambient requirements, but its qualification status, failure rate data, and PPAP documentation are not provided. For automotive load switching, consider Vishay's AEC-Q101-qualified alternatives such as SQ4487EY-T1_GE3.
How is thermal performance validated for SI4487DY-T1-GE3 on standard FR4 PCBs?
Thermal performance of SI4487DY-T1-GE3 is validated per JEDEC JESD51-2 and JESD51-14 standards using a 1" × 1" FR4 board with 2 oz copper. The datasheet specifies RthJA = 50 °C/W (max) and RthJF = 25 °C/W (max) under these conditions. SI4487DY-T1-GE3's SO-8 package uses all eight pins as drain connections to maximize copper contact area, enabling direct thermal coupling to inner-layer ground planes without requiring thermal vias.
SI4487DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1075 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4487DY-T1-GE3 FAQ
1.How can I place an order for SI4487DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4487DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4487DY-T1-GE3 reliable?
The price and inventory of SI4487DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4487DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4487DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4487DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4487DY-T1-GE3?
SI4487DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4487DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4487DY-T1-GE3?
For technical support, including SI4487DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4487DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4487DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4487DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4487DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4487DY-T1-GE3?
All SI4487DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4487DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4487DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4487DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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