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Vishay Siliconix SI4488DY-T1-E3
- Part No.:
- SI4488DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4488DY-T1-E3.pdf
- Description:
- MOSFET N-CH 150V 3.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,291
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Product details
Overview
SI4488DY-T1-E3 from Vishay Siliconix is an N-channel 150-V (D-S) TrenchFET® Power MOSFET in SO-8 package, with RDS(on) = 0.050 Ω at VGS = 10 V, continuous drain current of 5.0 A at TA = 25 °C, and gate threshold voltage of 2.0 V. It serves as a high-efficiency switching element in DC-DC converters, motor drivers, and load-switching circuits operating up to 150 V.
For engineers reviewing the SI4488DY-T1-E3 datasheet, SI4488DY-T1-E3 pinout, SI4488DY-T1-E3 application, or SI4488DY-T1-E3 equivalent, key selection criteria include its 150-V VDS, 5.0-A continuous ID rating, SO-8 thermal performance (RthJA = 65 °C/W steady-state), 30–36 nC total gate charge, and compliance with RoHS and halogen-free standards.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in medium-voltage power conversion stages. Its 0.041–0.050 Ω RDS(on) at 10 V gate drive enables efficient operation in synchronous rectification and PWM-controlled loads.
The device features integrated body diode with VSD = 0.75–1.1 V at IS = 2.8 A and trr = 40–70 ns, supporting moderate-frequency freewheeling. Thermal design is guided by validated RthJF = 17–21 °C/W (junction-to-foot) and RthJA = 65–80 °C/W (junction-to-ambient, steady-state).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports input rails up to 120 V DC with margin for transients |
| RDS(on) | 0.050 Ω @ VGS = 10 V - limits conduction loss to ≤1.25 W at 5 A |
| ID (continuous) | 5.0 A @ TA = 25 °C - suitable for compact 2–3 W power stages on FR4 |
| Qg | 30–36 nC - determines gate driver current requirement (~1–2 mA avg. at 100 kHz) |
| VGS(th) | 2.0 V (min) - ensures turn-on with standard 3.3 V or 5 V logic-level gate drive |
| tr/tf | 7–11 ns / 10–15 ns - enables switching above 500 kHz with controlled EMI |
| RthJA | 65 °C/W (steady-state) - requires ≤25 °C ambient rise for 150 °C max junction temp at 3.1 W |
Pinout & Package
SO-8 (narrow-body, MS-012 compliant), surface-mount package with exposed drain pad for thermal enhancement. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (L × W × H); lead pitch = 1.27 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; accepts 0–10 V logic-level drive; 0.2–1.2 Ω gate resistance affects switching speed |
| 2 | Source (S) | Reference node for gate drive; common return path for load current and body diode conduction |
| 3 | Drain (D) | High-side switch output; electrically connected to exposed pad for thermal conduction |
| 4 | Drain (D) | Parallel drain connection; reduces package inductance and improves current sharing in high-frequency operation |
| 5 | Drain (D) | Parallel drain connection; enhances thermal dissipation via multiple internal die-to-package paths |
| 6 | Drain (D) | Parallel drain connection; lowers effective RDS(on) and improves power density |
| 7 | Source (S) | Secondary source connection; minimizes source inductance for stable gate control during fast transitions |
| 8 | Gate (G) | Redundant gate terminal; used for Kelvin gate sensing or paralleling configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.050 Ω RDS(on) at 150 V - 30% lower on-resistance than planar MOSFETs in same package |
| RoHS and halogen-free | Complies with Directive 2002/95/EC and IEC 61249-2-21 - meets global environmental compliance requirements |
| Low Qgd/Qgs ratio | 8.5 nC / 8.5 nC - improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
| Integrated body diode | VSD = 0.75–1.1 V @ 2.8 A - supports bidirectional current in half-bridge freewheeling without external diode |
| Exposed drain pad | Thermal resistance RthJF = 17–21 °C/W - enables >2× power handling vs. standard SO-8 without heatsink |
Applications
| DC-DC Synchronous Buck Converter | Industrial Motor Control Module |
|---|---|
Use Scenario: High-efficiency 12–48 V input to 3.3/5/12 V output converter in programmable logic controllers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switching at 250–500 kHz with gate driven by dedicated controller IC. Use Value: 0.050 Ω RDS(on) reduces conduction loss by ~40% vs. Schottky diode replacement, improving full-load efficiency to >92%. | Use Scenario: 24 V brushed DC motor driver in factory automation actuators with PWM speed control. IC Role / Device Role / Timing Role: High-current H-bridge low-side switch, handling 5 A peak load with 100% duty cycle capability. Use Value: SO-8 thermal design supports 3.1 W dissipation at 25 °C ambient, enabling compact PCB layout without forced air cooling. |
| Telecom Power Supply Unit | LED Constant-Current Driver |
Use Scenario: Secondary-side OR-ing and hot-swap protection in redundant 48 V telecom rectifiers. IC Role / Device Role / Timing Role: Load switch with fast turn-off (tf ≤ 15 ns) to prevent backfeed during fault conditions. Use Value: 150 V VDS rating provides 30% overvoltage margin against 48 V system transients per GR-1089-CORE. | Use Scenario: Dimmable constant-current LED driver for architectural lighting with analog/PWM dimming interface. IC Role / Device Role / Timing Role: Precision current sink switch, modulated at 1–10 kHz to regulate LED string current. Use Value: Low VGS(th) (2.0 V min) ensures reliable turn-on with 3.3 V microcontroller GPIO, eliminating level-shifter circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Same SO-8 package; RDS(on) = 0.045 Ω @ 10 V but VDS = 100 V only | Limited to ≤100 V systems; unsuitable for 120 V transient-tolerant designs | Select when VDS margin < 120 V is acceptable and lower RDS(on) is prioritized |
| STP16NF15 | TO-220 package; RDS(on) = 0.12 Ω @ 10 V; higher thermal resistance (RthJA ≈ 62 °C/W) | Requires heatsink for >2 W operation; incompatible with space-constrained SO-8 layouts | Select when board area allows through-hole mounting and cost sensitivity outweighs thermal density needs |
Compared with IRF7470PBF and STP16NF15, SI4488DY-T1-E3 delivers optimal balance of 150 V rating, SO-8 footprint, and 0.050 Ω on-resistance - enabling higher-voltage, surface-mount power stages without thermal derating penalties.
Availability
SI4488DY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, industrial motor drivers, telecom power units, and LED constant-current drivers requiring stable component supply across production lifecycles.
Supply support for SI4488DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics since 1962.
The Si4488DY product line targets medium-voltage, surface-mount power switching applications where SO-8 thermal density, 150 V robustness, and logic-level gate drive are critical - especially in industrial and telecom infrastructure.
FAQ
What is the maximum continuous drain current rating for SI4488DY-T1-E3 at 70 °C ambient temperature?
The SI4488DY-T1-E3 supports 2.8 A continuous drain current at TA = 70 °C under steady-state conditions, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package with RthJA = 65–80 °C/W. For sustained 5.0 A operation, board-level thermal management (e.g., copper pour, airflow) must maintain case temperature below 50 °C. The SI4488DY-T1-E3 datasheet confirms this value under Note "a" for continuous drain current.
Does SI4488DY-T1-E3 support logic-level gate drive from a 3.3 V microcontroller?
Yes, SI4488DY-T1-E3 has a gate threshold voltage VGS(th) minimum of 2.0 V, ensuring reliable turn-on with 3.3 V logic-level gate drive. However, full enhancement (to achieve rated RDS(on) = 0.050 Ω) requires VGS ≥ 10 V. At 3.3 V, RDS(on) rises significantly - typical curves show ~0.25 Ω at VGS = 3.3 V. So while SI4488DY-T1-E3 switches on with 3.3 V, optimal conduction performance demands 10 V gate drive.
What is the avalanche energy rating of SI4488DY-T1-E3, and how is it tested?
The SI4488DY-T1-E3 is rated for single-pulse avalanche current IAS = 25 A with L = 0.1 mH, as defined in the Absolute Maximum Ratings table. Avalanche energy is not directly specified, but the characteristic curve "Avalanche Current vs. Time" shows decay from 10 A to <1 A within 10 ms at TJ = 125 °C. Testing follows JEDEC JESD24-10 methodology using unclamped inductive switching (UIS) with gate shorted to source. This validates ruggedness for inductive load switching in SI4488DY-T1-E3 applications.
How does the SO-8 package of SI4488DY-T1-E3 improve thermal performance compared to standard SO-8 MOSFETs?
The SI4488DY-T1-E3 uses an enhanced SO-8 package with an exposed drain pad thermally connected to four internal drain leads (pins 3–6), achieving RthJF = 17–21 °C/W (junction-to-foot). This is ~35% lower than standard SO-8 MOSFETs without exposed pads (typically RthJF > 30 °C/W). Combined with RthJA = 65 °C/W (vs. >80 °C/W for non-enhanced variants), the SI4488DY-T1-E3 sustains higher power in compact layouts. The datasheet specifies these values in the Thermal Resistance Ratings table.
Is SI4488DY-T1-E3 suitable for use in automotive applications?
No, SI4488DY-T1-E3 is not qualified to AEC-Q101 or automotive-grade reliability standards. Its datasheet specifies operating junction temperature from –55 °C to +150 °C, but Vishay does not list automotive qualification, PPAP documentation, or extended temperature life testing for this part. While the SI4488DY-T1-E3 may function in non-safety-critical 12 V auxiliary circuits, it lacks automotive-specific screening, failure-in-time (FIT) data, and stress-test validation required for ISO/TS 16949-compliant designs.
SI4488DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.56W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4488DY-T1-E3 FAQ
1.How can I place an order for SI4488DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4488DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4488DY-T1-E3 reliable?
The price and inventory of SI4488DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4488DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4488DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4488DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4488DY-T1-E3?
SI4488DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4488DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4488DY-T1-E3?
For technical support, including SI4488DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4488DY-T1-E3 requirements.
6.How does Aetrix verify that SI4488DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4488DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4488DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4488DY-T1-E3?
All SI4488DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4488DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4488DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4488DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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