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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4490DY-T1-E3

Name: SI4490DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4490DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4490DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4490DY-T1-E3.pdf

Description:: MOSFET N-CH 200V 2.85A 8SO

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Product details

Overview

SI4490DY-T1-E3 from Vishay Siliconix is an N-channel 200-V TrenchFET® power MOSFET in SO-8 package, with R_DS(on) = 0.080 Ω at V_GS = 10 V, continuous drain current of 4.0 A (T_A = 25 °C), and ±20 V gate-source voltage rating. It serves as a high-voltage switching element in DC-DC converters and motor control circuits.

For engineers reviewing the SI4490DY-T1-E3 datasheet, SI4490DY-T1-E3 pinout, SI4490DY-T1-E3 application, or SI4490DY-T1-E3 equivalent, key selection criteria include its 200-V V_DS, low on-resistance at 6 V and 10 V drive, SO-8 thermal performance, and RoHS-compliant lead-free construction.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low R_DS(on) while maintaining robust avalanche capability (I_AS = 15 A) and fast switching (t_d(on) = 14–20 ns, t_f = 25–35 ns). Its gate threshold voltage (V_GS(th) = 2.0 V typ.) enables reliable turn-on with standard logic-level drivers.

The device integrates a body diode with V_SD = 0.75–1.2 V at I_S = 2.8 A and exhibits Q_g = 34–42 nC, supporting efficient hard-switching operation in medium-frequency power stages up to ~500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports primary-side switching in offline flyback and half-bridge topologies up to 170 V RMS input.
R_DS(on) @ V_GS = 10 V	0.065–0.080 Ω - enables <320 mW conduction loss at 4 A DC, critical for thermally constrained SO-8 layouts.
I_D (continuous, T_A = 25 °C)	4.0 A - defines maximum steady-state load current without heatsink under standard FR4 board conditions.
Q_g	34–42 nC - determines gate driver power requirement and switching transition time in PWM controllers.
T_J range	–55 to +150 °C - ensures operation across industrial ambient environments and internal self-heating in enclosed enclosures.
R_thJA (steady state)	65–80 °C/W - sets junction-to-ambient temperature rise per watt, guiding thermal design on 1" × 1" FR4 PCB.

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain paddle for enhanced thermal dissipation. Dimensions: 4.80–5.00 mm × 3.80–4.00 mm × 1.35–1.75 mm height.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven parallel drain terminals tied to internal die drain and exposed paddle - provides low-inductance, high-current path and thermal conduction to PCB copper.
6	Gate (G)	Single gate input - requires ≤6 Ω series resistance to limit ringing and ensure controlled turn-on/turn-off per datasheet timing specs.
Source (S)	Terminals 1–3 are source-connected in this variant	Three dedicated source pins reduce source inductance and improve stability in high-di/dt switching applications.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling higher power density in SO-8 footprint.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and EU Directive 2002/95/EC - required for consumer and industrial products sold in regulated markets.
15 A avalanche rated	Withstands single-pulse inductive energy (E_AS) without failure - eliminates need for external snubbers in relay-driving or solenoid-control circuits.
Low Q_gd/Q_g ratio	Q_gd = 12.0 nC of total 34–42 nC Q_g - improves Miller immunity and reduces risk of spurious turn-on during high dv/dt commutation.

Applications

DC-DC Converter Primary Switch	Motor Driver Half-Bridge Leg
Use Scenario: High-efficiency 24–48 V input isolated flyback converter delivering 5–12 V output for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side power switch operating at 100–300 kHz with unidirectional current flow and synchronous rectification support. Use Value: 0.080 Ω R_DS(on) minimizes conduction loss at 3–4 A peak, while SO-8 thermal resistance enables stable operation without heatsink on standard PCB.	Use Scenario: 24 V brushed DC motor control in automated gate actuators, requiring bidirectional PWM and stall protection. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, handling 3–4 A continuous current with fast turn-off to prevent shoot-through. Use Value: 25–35 ns fall time and 15 A avalanche rating allow safe interruption of inductive kickback during emergency stop events.
LED Driver Power Switch	Power Supply OR-ing Diode Replacement
Use Scenario: Constant-current LED string driver for architectural lighting, using buck topology with 36 V input and 24 V LED string. IC Role / Device Role / Timing Role: Main switching transistor controlling duty cycle and regulating average current through high-brightness LEDs. Use Value: Low gate charge (34–42 nC) reduces driver IC loading and improves efficiency at 250–500 kHz switching frequencies.	Use Scenario: Redundant 12 V power supply OR-ing in telecom shelf systems, replacing Schottky diodes to reduce forward drop and heat. IC Role / Device Role / Timing Role: Active OR-ing MOSFET configured as ideal diode, driven by dedicated controller to emulate low-V_F behavior. Use Value: Body diode V_SD = 0.75–1.2 V and low R_DS(on) cut conduction loss by >60% vs. 0.45 V Schottky, improving system efficiency and thermal margin.

DC-DC Converter Primary Switch

Motor Driver Half-Bridge Leg

Use Scenario: High-efficiency 24–48 V input isolated flyback converter delivering 5–12 V output for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 100–300 kHz with unidirectional current flow and synchronous rectification support.

Use Value: 0.080 Ω R_DS(on) minimizes conduction loss at 3–4 A peak, while SO-8 thermal resistance enables stable operation without heatsink on standard PCB.

Use Scenario: 24 V brushed DC motor control in automated gate actuators, requiring bidirectional PWM and stall protection.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, handling 3–4 A continuous current with fast turn-off to prevent shoot-through.

Use Value: 25–35 ns fall time and 15 A avalanche rating allow safe interruption of inductive kickback during emergency stop events.

LED Driver Power Switch

Power Supply OR-ing Diode Replacement

Use Scenario: Constant-current LED string driver for architectural lighting, using buck topology with 36 V input and 24 V LED string.

IC Role / Device Role / Timing Role: Main switching transistor controlling duty cycle and regulating average current through high-brightness LEDs.

Use Value: Low gate charge (34–42 nC) reduces driver IC loading and improves efficiency at 250–500 kHz switching frequencies.

Use Scenario: Redundant 12 V power supply OR-ing in telecom shelf systems, replacing Schottky diodes to reduce forward drop and heat.

IC Role / Device Role / Timing Role: Active OR-ing MOSFET configured as ideal diode, driven by dedicated controller to emulate low-V_F behavior.

Use Value: Body diode V_SD = 0.75–1.2 V and low R_DS(on) cut conduction loss by >60% vs. 0.45 V Schottky, improving system efficiency and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK20ZFP	TO-92 package, 200 V, R_DS(on) = 0.13 Ω @ 10 V, I_D = 3.5 A - higher on-resistance, lower current, through-hole mounting.	Used in low-cost AC-DC adapters where PCB space is unconstrained and thermal mass is available via chassis mounting.	Select when cost sensitivity outweighs board space and thermal performance; not suitable for high-density SO-8 layouts.
IRF640NPBF	TO-220 package, 200 V, R_DS(on) = 0.18 Ω @ 10 V, I_D = 18 A - higher R_DS(on), higher current rating, larger footprint and better heatsinking capability.	Preferred in high-power linear regulators and audio amplifiers where thermal management uses external heatsinks and layout allows large copper areas.	Choose when higher peak current and superior thermal derating are needed, accepting larger size and manual assembly.

Compared with STP4NK20ZFP and IRF640NPBF, SI4490DY-T1-E3 delivers optimal balance of low R_DS(on), compact SO-8 footprint, and surface-mount manufacturability for space-constrained industrial power supplies - without requiring through-hole assembly or oversized heatsinks.

Availability

SI4490DY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and redundant power OR-ing circuits requiring stable component supply and consistent lead-free compliance.

Supply support for SI4490DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The Si4490DY belongs to Vishay's TrenchFET® Gen II high-voltage MOSFET family, engineered for improved R_DS(on)-to-gate-charge trade-offs in medium-power SMPS and motor control applications.

FAQ

What is the maximum continuous drain current for SI4490DY-T1-E3 at 70 °C ambient temperature?

The SI4490DY-T1-E3 supports 3.2 A continuous drain current at T_A = 70 °C on a standard 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the SO-8 package's R_thJA of 65–80 °C/W and must be validated against actual PCB layout and airflow conditions. The SI4490DY-T1-E3 datasheet confirms this value under Note 'a' for continuous operation.

Does SI4490DY-T1-E3 have avalanche capability, and what is its rated current?

Yes, the SI4490DY-T1-E3 is rated for 15 A single-pulse avalanche current (I_AS) with L = 0.1 mH, as defined in the Absolute Maximum Ratings section. This capability allows it to safely absorb inductive energy during switching transients without destructive failure, making it suitable for driving relays, solenoids, and motors without additional clamping components. The SI4490DY-T1-E3 specification sheet explicitly lists this parameter under "Avalanche Current".

What is the gate threshold voltage range for SI4490DY-T1-E3, and how does it affect drive requirements?

The SI4490DY-T1-E3 has a gate threshold voltage V_GS(th) of 2.0 V (typical), with no min/max range specified - only a typical value at I_D = 250 µA. This low threshold enables turn-on with 3.3 V or 5 V logic-level gate drivers, but full enhancement requires ≥10 V to achieve rated R_DS(on). The SI4490DY-T1-E3 datasheet specifies that R_DS(on) = 0.090 Ω is guaranteed at V_GS = 6.0 V, confirming usable conduction at logic-compatible levels.

Is SI4490DY-T1-E3 suitable for use as an ideal diode in OR-ing applications?

Yes, the SI4490DY-T1-E3 is well-suited for active OR-ing due to its low R_DS(on) (0.080 Ω), integrated body diode (V_SD = 0.75–1.2 V), and SO-8 package thermal performance. When paired with a dedicated ideal diode controller, it replaces Schottky diodes to reduce forward voltage drop and power loss. The SI4490DY-T1-E3 datasheet confirms its suitability via low Q_g and fast switching parameters essential for synchronous OR-ing control.

What is the thermal resistance from junction to foot (R_thJF) for SI4490DY-T1-E3, and why does it matter?

The SI4490DY-T1-E3 has a maximum junction-to-foot thermal resistance (R_thJF) of 21 °C/W, measured to the exposed drain paddle. This parameter is critical when the drain is soldered to a large PCB copper pour or thermal pad, as it directly governs heat transfer from die to board. Lower R_thJF enables higher power handling without heatsinks - a key advantage over non-exposed-pad packages. The SI4490DY-T1-E3 datasheet specifies this value in the Thermal Resistance Ratings table.

SI4490DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 2.85A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4490DY-T1-E3 FAQ

1.How can I place an order for SI4490DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4490DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4490DY-T1-E3 reliable?

The price and inventory of SI4490DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4490DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4490DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4490DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4490DY-T1-E3?

SI4490DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4490DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4490DY-T1-E3?

For technical support, including SI4490DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4490DY-T1-E3 requirements.

6.How does Aetrix verify that SI4490DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4490DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4490DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4490DY-T1-E3?

All SI4490DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4490DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4490DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4490DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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