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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4620DY-T1-E3

Name: SI4620DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4620DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4620DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4620DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 6A/7.5A 8SO

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Product details

Overview

SI4620DY-T1-E3 from Vishay Siliconix is an N-channel 30-V MOSFET with integrated Schottky diode in SO-8 package, featuring R_DS(on) = 0.035 Ω at V_GS = 10 V, 7.4 A continuous drain current, and 4.2 nC total gate charge - optimized for portable load switching and boost converter applications.

For engineers reviewing the SI4620DY-T1-E3 datasheet, SI4620DY-T1-E3 pinout, SI4620DY-T1-E3 application, or SI4620DY-T1-E3 equivalent, this device delivers verified low-conduction loss, fast switching, and co-packaged diode functionality critical for space-constrained DC-DC power stages and battery-powered load control circuits.

Technical Context

The SI4620DY-T1-E3 integrates a logic-level N-channel MOSFET and a 30-V Schottky diode in a single SO-8 footprint, enabling synchronous rectification and reverse-polarity protection without external components. Its 1.2–2.5 V gate threshold supports direct drive from 3.3 V microcontrollers.

Thermal design is supported by R_thJA = 62.5 °C/W (MOSFET) and R_thJF = 40 °C/W (drain-to-foot), with rated junction temperature up to 150 °C. The body diode exhibits V_SD = 0.8–1.2 V at 1.7 A and t_rr = 20–40 ns, while the Schottky section provides V_F = 0.470 V at 3 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for low-voltage DC-DC and battery-switching topologies
R_DS(on)	0.035 Ω at V_GS = 10 V - Enables ≤220 mW conduction loss at 7.4 A, reducing thermal stress in compact layouts
I_D (continuous)	6.1 A at V_GS = 4.5 V - Supports robust operation from 3.3 V/5 V logic-level drivers without gate boosting
Q_g	4.2 nC at V_GS = 4.5 V - Minimizes gate drive power and enables efficient 1–2 MHz switching in boost converters
V_F (Schottky)	0.470 V at 3 A - Low forward drop improves efficiency in freewheeling paths versus standard PN diodes
t_rr (body diode)	20–40 ns - Limits switching losses during hard-commutation in synchronous buck or flyback configurations
T_J range	−55 to +150 °C - Qualified for industrial and extended-temperature portable equipment environments

Pinout & Package

SO-8 narrow-body surface-mount package (JEDEC MS-012), 4.8–5.0 mm × 3.8–4.0 mm × 1.35–1.75 mm height, lead (Pb)-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal for MOSFET channel; accepts 0–20 V gate-source bias; threshold 1.2–2.5 V
2 (S)	Source	Common reference node for MOSFET and Schottky cathode; connects to ground or low-side return path
3 (S)	Source	Second source connection - paralleled internally with Pin 2 for lower inductance and higher current capability
4 (S)	Source	Third source connection - electrically tied to Pins 2 and 3; enhances thermal and current sharing
5 (D)	Drain	Main MOSFET drain and Schottky anode; high-current output node requiring copper pour for thermal management
6 (D)	Drain	Second drain connection - internally bonded to Pin 5; reduces package inductance in high-dI/dt switching
7 (D)	Drain	Third drain connection - tied to Pins 5 and 6; improves power dissipation via multiple thermal paths
8 (D)	Drain	Fourth drain connection - completes quad-drain configuration for enhanced SO-8 thermal performance

Key Features

Feature	Design Value
Integrated Schottky diode	30 V / 3 A rated Schottky with 0.470 V forward drop replaces discrete diode + MOSFET layout, saving PCB area and parasitic inductance
LITTLE FOOT® Plus construction	Optimized SO-8 footprint with quad-drain and triple-source terminals lowers R_DS(on) and thermal resistance vs. standard SO-8 MOSFETs
Logic-level gate drive	1.2–2.5 V V_GS(th) ensures full enhancement at 3.3 V, eliminating need for gate driver ICs in portable systems
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - suitable for consumer, medical, and industrial end-equipment compliance
Low Q_g/R_DS(on) ratio	4.2 nC gate charge per 0.035 Ω on-resistance enables high-efficiency, high-frequency switching with minimal drive loss

Applications

Portable Load Switching	HDD Power Management
Use Scenario: Battery-powered handheld devices require controlled power delivery to peripherals (e.g., USB ports, displays) with reverse-current blocking and low quiescent loss. IC Role / Device Role / Timing Role: N-channel MOSFET switch with integrated Schottky diode provides bidirectional current control and backflow prevention. Use Value: 0.035 Ω R_DS(on) limits voltage drop to <120 mV at 3.4 A, preserving battery runtime; Schottky prevents reverse discharge during hot-swap events.	Use Scenario: Hard disk drive motor and actuator circuits demand fast, low-loss power sequencing and overcurrent protection during spin-up and seek operations. IC Role / Device Role / Timing Role: High-current load switch managing 5 V/12 V rail distribution with integrated diode for flyback energy recirculation. Use Value: 6.1 A rating at 4.5 V gate drive supports HDD peak currents; 40 ns body diode recovery minimizes switching loss during PWM-controlled spindle control.
Boost Converter Output Stage	USB OTG Power Path
Use Scenario: Portable chargers and power banks use boost converters to generate 5 V from single-cell Li-ion (2.7–4.2 V) for USB host output. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET paired with internal Schottky for low-loss freewheeling path in continuous conduction mode. Use Value: 0.470 V Schottky forward drop reduces conduction loss by ~40% vs. standard PN diode, improving conversion efficiency above 85% at 2 A load.	Use Scenario: Smartphones and tablets implement USB On-The-Go (OTG) to supply 5 V to peripherals while operating from battery, requiring reverse-current isolation and low-drop regulation. IC Role / Device Role / Timing Role: Load switch controlling VBUS path with integrated Schottky preventing backfeed into battery during peripheral attach/detach. Use Value: Dual-path conduction (MOSFET + Schottky) ensures <100 mΩ effective on-resistance and <0.5 V forward drop, meeting USB 2.0 voltage tolerance under 500 mA load.

Portable Load Switching

HDD Power Management

Use Scenario: Battery-powered handheld devices require controlled power delivery to peripherals (e.g., USB ports, displays) with reverse-current blocking and low quiescent loss.

IC Role / Device Role / Timing Role: N-channel MOSFET switch with integrated Schottky diode provides bidirectional current control and backflow prevention.

Use Value: 0.035 Ω R_DS(on) limits voltage drop to <120 mV at 3.4 A, preserving battery runtime; Schottky prevents reverse discharge during hot-swap events.

Use Scenario: Hard disk drive motor and actuator circuits demand fast, low-loss power sequencing and overcurrent protection during spin-up and seek operations.

IC Role / Device Role / Timing Role: High-current load switch managing 5 V/12 V rail distribution with integrated diode for flyback energy recirculation.

Use Value: 6.1 A rating at 4.5 V gate drive supports HDD peak currents; 40 ns body diode recovery minimizes switching loss during PWM-controlled spindle control.

Boost Converter Output Stage

USB OTG Power Path

Use Scenario: Portable chargers and power banks use boost converters to generate 5 V from single-cell Li-ion (2.7–4.2 V) for USB host output.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET paired with internal Schottky for low-loss freewheeling path in continuous conduction mode.

Use Value: 0.470 V Schottky forward drop reduces conduction loss by ~40% vs. standard PN diode, improving conversion efficiency above 85% at 2 A load.

Use Scenario: Smartphones and tablets implement USB On-The-Go (OTG) to supply 5 V to peripherals while operating from battery, requiring reverse-current isolation and low-drop regulation.

IC Role / Device Role / Timing Role: Load switch controlling VBUS path with integrated Schottky preventing backfeed into battery during peripheral attach/detach.

Use Value: Dual-path conduction (MOSFET + Schottky) ensures <100 mΩ effective on-resistance and <0.5 V forward drop, meeting USB 2.0 voltage tolerance under 500 mA load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si4622DY-T1-E3	Higher R_DS(on) = 0.052 Ω at 4.5 V, same SO-8 package and Schottky integration	Slightly reduced efficiency at high load; identical pinout and thermal profile	Select when lower gate charge (3.8 nC) is prioritized over minimal R_DS(on) increase
DMN3026LSD-13	30 V, 0.026 Ω at 10 V, no integrated Schottky; requires external diode	Requires additional component and board area; better R_DS(on) but higher system BOM count	Choose for maximum efficiency where discrete diode placement and layout control are acceptable

Compared with SI4620DY-T1-E3, Si4622DY-T1-E3 trades 15% higher on-resistance for marginally lower gate charge, while DMN3026LSD-13 achieves lower R_DS(on) only at the cost of added complexity and no integrated diode - making SI4620DY-T1-E3 optimal for space-constrained, single-component boost/load-switch designs.

Availability

SI4620DY-T1-E3 is available at Aetrix Electronics and suitable for portable load switching, HDD driver circuits, and boost converter output stages requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for SI4620DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal performance, and reliability.

The SI4620DY-T1-E3 belongs to Vishay's LITTLE FOOT® Plus MOSFET family, engineered specifically for high-density portable power management where integrated Schottky functionality, logic-level drive, and SO-8 thermal optimization are essential.

FAQ

What is the maximum continuous drain current for SI4620DY-T1-E3 at 70 °C case temperature?

The SI4620DY-T1-E3 supports 6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained power dissipation, and must be validated against actual PCB copper area and ambient conditions in the final design.

Does SI4620DY-T1-E3 include both MOSFET and Schottky diode functions in one die or package?

SI4620DY-T1-E3 integrates a single N-channel MOSFET and a separate Schottky diode in one monolithic SO-8 package - not a single die, but co-packaged with shared thermal and electrical terminals. The Schottky anode connects to Pin 5–8 (drain), and cathode ties to Pins 2–4 (source), enabling independent or concurrent use.

What is the gate threshold voltage range for SI4620DY-T1-E3, and how does it affect 3.3 V microcontroller compatibility?

The SI4620DY-T1-E3 has a gate threshold voltage V_GS(th) of 1.2–2.5 V, ensuring full enhancement at 3.3 V logic levels. At V_GS = 3.3 V, R_DS(on) is guaranteed ≤0.052 Ω, supporting reliable switching in battery-powered systems without level-shifting circuitry.

Can SI4620DY-T1-E3 be used as a synchronous rectifier in a buck converter?

Yes - SI4620DY-T1-E3 is suitable as a low-side synchronous rectifier in buck converters due to its low R_DS(on), fast body diode (t_rr = 20–40 ns), and logic-level gate drive. However, its integrated Schottky is not intended for buck freewheeling; the MOSFET channel should be actively driven, with the body diode serving as backup conduction path.

What is the thermal resistance from junction to ambient (R_thJA) for SI4620DY-T1-E3 under standard FR4 mounting?

The SI4620DY-T1-E3 has a maximum R_thJA of 62.5 °C/W for the MOSFET section and 65 °C/W for the Schottky section when mounted on a standard FR4 board per Vishay's recommended pad layout. These values assume 1 in² (6.45 cm²) of 2-oz copper on the primary side, and must be adjusted for actual PCB stackup and copper area.

SI4620DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Ta), 7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1040 pF @ 15 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4620DY-T1-E3 FAQ

1.How can I place an order for SI4620DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4620DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4620DY-T1-E3 reliable?

The price and inventory of SI4620DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4620DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4620DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4620DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4620DY-T1-E3?

SI4620DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4620DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4620DY-T1-E3?

For technical support, including SI4620DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4620DY-T1-E3 requirements.

6.How does Aetrix verify that SI4620DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4620DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4620DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4620DY-T1-E3?

All SI4620DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4620DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4620DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4620DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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