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Vishay Siliconix SI4620DY-T1-GE3
- Part No.:
- SI4620DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4620DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 6A/7.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,022
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Product details
Overview
SI4620DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V MOSFET with integrated Schottky diode in SO-8 package, featuring RDS(on) = 0.035 Ω at VGS = 10 V, 7.4 A continuous drain current, and 4.2 nC total gate charge. It serves as a load switch in portable boost circuits and HDD driver stages where low conduction loss and fast switching are critical.
For engineers reviewing the SI4620DY-T1-GE3 datasheet, SI4620DY-T1-GE3 pinout, SI4620DY-T1-GE3 application, or SI4620DY-T1-GE3 equivalent, this device is evaluated for high-efficiency DC-DC load switching, synchronous rectification replacement, and compact dual-function power stage integration in space-constrained portable systems.
Technical Context
This MOSFET integrates a co-packaged Schottky diode to enable bidirectional current handling and reduce external component count in buck-boost and battery protection topologies. Its 30 V VDS rating and 0.052 Ω RDS(on) at 4.5 V gate drive support operation from single-cell Li-ion supplies.
The device uses LITTLE FOOT® Plus packaging for enhanced thermal performance in SO-8 footprint, with RthJA = 62.5 °C/W (MOSFET) and RthJF = 40 °C/W, enabling 6.1 A operation at VGS = 4.5 V without forced cooling in typical FR4 layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Supports input rails up to 28 V DC in portable power management without breakdown risk. |
| RDS(on) | 0.035 Ω @ VGS = 10 V - Delivers ≤ 1.55 W conduction loss at 6 A, reducing thermal stress in compact PCBs. |
| ID Continuous | 6.1 A @ VGS = 4.5 V - Enables direct logic-level drive from 3.3 V/5 V microcontrollers in load-switch applications. |
| Qg | 4.2 nC @ VGS = 4.5 V - Allows fast turn-on with low gate-drive power, suitable for 1–2 MHz switching in boost converters. |
| Schottky VF | 0.47 V @ 3 A - Provides lower forward drop than body diode (VSD = 0.8–1.2 V), improving efficiency in reverse-current paths. |
| TJ Range | −55 to +150 °C - Rated for extended industrial temperature operation in handheld and storage devices. |
Pinout & Package
SO-8 narrow-body package (JEDEC MS-012), 4.8 mm × 3.9 mm footprint, 1.75 mm max height, lead (Pb)-free and halogen-free per IEC 61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal for MOSFET channel; requires ≥ 4.5 V for full enhancement in logic-level operation. |
| 2 (S) | Source | Common reference for gate drive and current return path; tied to ground or low-side node in load-switch configuration. |
| 3 (D) | Drain | Main current output node for MOSFET; also connects to cathode of integrated Schottky diode. |
| 4 (K) | Schottky Cathode | Shared with Drain pin - enables unidirectional Schottky conduction from Source to Drain (cathode-to-anode). |
| 5 (A) | Schottky Anode | Independent terminal for Schottky anode; used for reverse-current path in boost or flyback secondary side. |
| 6 (K) | Schottky Cathode | Redundant cathode connection (pin 4 and 6 are internally bonded); improves current sharing and thermal distribution. |
| 7 (A) | Schottky Anode | Second anode terminal; provides parallel conduction path and reduces effective series resistance for 3 A Schottky operation. |
| 8 (D) | Drain | Second Drain connection (pins 3 and 8 are internally bonded); enhances current capacity and thermal dissipation in high-power switching. |
Key Features
| Feature | Design Value |
|---|---|
| LITTLE FOOT® Plus SO-8 | Optimized thermal pad layout and internal bonding reduce RthJF to 40 °C/W, enabling higher sustained current vs. standard SO-8. |
| Integrated Schottky Diode | Co-packaged 30 V / 3 A Schottky (VF = 0.47 V) eliminates need for external diode in boost feedback or reverse-polarity protection. |
| Logic-Level Gate Drive | Specified RDS(on) = 0.052 Ω at VGS = 4.5 V supports direct interface with 3.3 V MCU GPIOs without level-shifting. |
| Halogen-Free & RoHS | Complies with IEC 61249-2-21 and Directive 2002/95/EC - qualified for consumer and medical portable equipment. |
| Low Qgd/Qgs Ratio | Qgd = 1.5 nC, Qgs = 1.8 nC - improves switching controllability and reduces Miller-induced shoot-through risk in half-bridge use. |
Applications
| Portable Boost Power Supply | HDD Spindle Motor Driver |
|---|---|
Use Scenario: Step-up converter in USB-powered portable SSD enclosures requiring 5 V → 12 V conversion. IC Role / Device Role / Timing Role: Synchronous rectifier switch and integrated Schottky freewheeling diode in boost topology. Use Value: Reduces BOM count by eliminating discrete Schottky; 0.47 V VF lowers conduction loss by 35% vs. MOSFET body diode. |
Use Scenario: High-side load switch controlling 12 V spindle motor power in 2.5″ laptop HDD modules. IC Role / Device Role / Timing Role: Low-RDS(on) power switch with built-in reverse-current blocking via Schottky anode isolation. Use Value: Enables fast turn-off (<40 ns fall time) and prevents back-EMF damage during motor coast-down. |
| USB-C Power Delivery Sink | Li-ion Battery Protection IC Interface |
Use Scenario: Input power path management in USB-C PD sink devices supporting 20 V input with dynamic voltage selection. IC Role / Device Role / Timing Role: Primary load switch between CC-controlled input and system rail, with Schottky clamping for transient suppression. Use Value: 30 V VKA rating withstands 20 V PD transients; 0.035 Ω RDS(on) limits voltage drop to <210 mV at 6 A. |
Use Scenario: Secondary protection FET in smart battery packs, placed between cell stack and protection IC to isolate faults. IC Role / Device Role / Timing Role: Reverse-current blocking element using Schottky anode grounded to protect against charger reverse polarity. Use Value: Integrated Schottky allows independent control of forward (MOSFET) and reverse (Schottky) paths without external diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | 30 V, RDS(on) = 0.022 Ω @ 10 V, but no integrated Schottky; SO-8 with exposed drain pad. | Requires external Schottky for freewheeling; better for pure switching where thermal performance > integrated diode benefit. | Select when maximum efficiency at 10 V gate drive is prioritized and board area allows discrete diode placement. |
| DMN3028LSD-13 | 30 V, RDS(on) = 0.028 Ω @ 10 V, dual-N with common-drain Schottky; same SO-8 footprint but different pinout (G-S-D-S-G). | Not pin-compatible; Schottky shares source node, limiting reverse-path flexibility vs. SI4620DY-T1-GE3's isolated anode. | Choose only if redesign permits re-routing; offers lower RDS(on) but sacrifices independent Schottky anode routing. |
Compared with SI4620DY-T1-GE3, Si7157DP-T1-GE3 delivers lower on-resistance but adds BOM complexity, while DMN3028LSD-13 provides dual-FET functionality at the cost of non-interchangeable pinout and reduced Schottky routing freedom.
Availability
SI4620DY-T1-GE3 is available at Aetrix Electronics and suitable for portable boost power supplies, HDD motor drivers, USB-C PD sink power path management, and Li-ion battery protection circuits requiring stable component supply and halogen-free compliance.
Supply support for SI4620DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures high-performance discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SI4620DY-T1-GE3 belongs to Vishay's LITTLE FOOT® Plus MOSFET family, engineered for space-constrained portable electronics requiring integrated Schottky functionality and logic-level drive compatibility.
FAQ
What is the maximum continuous drain current for SI4620DY-T1-GE3 at 4.5 V gate drive?
The SI4620DY-T1-GE3 supports 6.1 A continuous drain current at VGS = 4.5 V and TC = 25 °C. This value drops to 4.8 A at TC = 70 °C due to thermal derating, as specified in the Absolute Maximum Ratings table. The device maintains stable operation within these limits when mounted on FR4 with recommended pad layout.
Does SI4620DY-T1-GE3 include a true Schottky diode or only the MOSFET body diode?
The SI4620DY-T1-GE3 integrates a discrete Schottky diode alongside the MOSFET - not just the intrinsic body diode. Confirmed by separate Schottky specifications (VF = 0.47 V at 3 A, IRM leakage < 0.5 mA at 30 V), distinct anode/cathode terminals (pins 5/6/7/4), and dedicated Schottky product summary section in the datasheet.
Can SI4620DY-T1-GE3 be used as a synchronous rectifier in a boost converter?
Yes, SI4620DY-T1-GE3 is suitable as a synchronous rectifier in boost converters. Its 4.2 nC Qg at 4.5 V enables efficient 1–2 MHz switching, and the integrated Schottky diode provides controlled freewheeling path. Pin 5 (Schottky anode) must be connected to the inductor node, while drain (pins 3/8) connects to output rail.
What is the thermal resistance from junction to ambient for SI4620DY-T1-GE3 under standard FR4 mounting?
For SI4620DY-T1-GE3 mounted on FR4 board, the maximum junction-to-ambient thermal resistance (RthJA) is 62.5 °C/W for the MOSFET section and 65 °C/W for the Schottky section. These values assume surface-mount assembly per Vishay Application Note 826 and are validated for steady-state conditions with no added heatsink.
Is SI4620DY-T1-GE3 pin-compatible with standard SO-8 MOSFETs like Si2300 or AO3400?
No, SI4620DY-T1-GE3 is not pin-compatible with generic SO-8 N-channel MOSFETs. Its 8-pin configuration includes dual anode (pins 5/7) and dual cathode (pins 4/6) terminals for the Schottky diode, differing from standard G-S-D pinouts. Attempting substitution without schematic and layout revision will cause functional failure.
SI4620DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta), 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1040 pF @ 15 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2W (Ta), 3.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4620DY-T1-GE3 FAQ
1.How can I place an order for SI4620DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4620DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4620DY-T1-GE3 reliable?
The price and inventory of SI4620DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4620DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4620DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4620DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4620DY-T1-GE3?
SI4620DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4620DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4620DY-T1-GE3?
For technical support, including SI4620DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4620DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4620DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4620DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4620DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4620DY-T1-GE3?
All SI4620DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4620DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4620DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4620DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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