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Vishay Siliconix SI4621DY-T1-E3
- Part No.:
- SI4621DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4621DY-T1-E3.pdf
- Description:
- MOSFET P-CH 20V 6.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,209
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Product details
Overview
SI4621DY-T1-E3 from Vishay Siliconix is a P-channel 20-V MOSFET with integrated Schottky diode in SO-8 package, delivering RDS(on) = 0.054 Ω at VGS = −10 V and 4.5 nC total gate charge, optimized for synchronous rectification in portable DC/DC converters.
For engineers reviewing the SI4621DY-T1-E3 datasheet, SI4621DY-T1-E3 pinout, SI4621DY-T1-E3 application, or SI4621DY-T1-E3 equivalent, key selection criteria include its dual-function integration (MOSFET + Schottky), low conduction loss at −4.5 V gate drive, and thermal performance validated on 1" × 1" FR4 board.
Technical Context
This device integrates a P-channel enhancement-mode MOSFET and a monolithic Schottky diode sharing source and drain terminals, enabling bidirectional current handling with body-diode and Schottky-path redundancy. Its gate threshold voltage (−1 to −3 V) supports logic-level drive from 3.3 V or 5 V controllers.
The SO-8 package provides separate thermal footprints for MOSFET and Schottky junctions, with distinct RthJA ratings (62.5 °C/W for MOSFET, 78 °C/W for Schottky) and shared drain-source metallization. Dynamic parameters-including Qg = 4.5 nC at −4.5 V and tr/tf ≤ 90 ns-support high-frequency switching up to 1 MHz in buck/boost topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V: Maximum blocking voltage for input-side switches in 12 V or lower systems. |
| RDS(on) | 0.054 Ω @ VGS = −10 V: Enables <120 mW conduction loss at 6.2 A continuous drain current. |
| ID | −6.2 A @ TC = 25 °C: Continuous current rating suitable for 5–10 W portable power stages. |
| Qg | 4.5 nC @ VGS = −4.5 V: Low gate charge reduces driver power and enables efficient 3.3 V control. |
| VF (Schottky) | 0.45 V @ IF = 1 A: Lower forward drop than MOSFET body diode, reducing reverse-conduction loss. |
| TJ Range | −55 to +150 °C: Supports operation in sealed handheld enclosures with limited airflow. |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for thermal dissipation; pin 1–8 arranged in standard dual-row configuration with G, S, D, and K terminals assigned per datasheet top view.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal for MOSFET channel; accepts −4.5 V to −10 V drive for full enhancement. |
| 2 (S) | Source | Common reference node for MOSFET and Schottky anode; connects to output rail in buck circuits. |
| 3 (D) | Drain | Shared drain terminal for MOSFET and Schottky cathode; ties to input rail or inductor node. |
| 4 (D) | Drain (thermal pad) | Exposed copper pad under package; must be soldered to PCB copper for RthJF = 33 °C/W cooling. |
| 5 (K) | Schottky Cathode | Integrated Schottky cathode tied internally to drain; enables independent forward-bias path. |
| 6 (S) | Source | Second source connection; electrically identical to pin 2, improves current sharing and layout symmetry. |
| 7 (S) | Source | Third source connection; redundant for low-inductance return path in high-dI/dt applications. |
| 8 (S) | Source | Fourth source connection; enhances thermal conduction from source metal to PCB plane. |
Key Features
| Feature | Design Value |
|---|---|
| LITTLE FOOT® Plus Schottky integration | Monolithic co-packaging eliminates discrete Schottky placement error and parasitic inductance in synchronous rectifiers. |
| RDS(on) = 0.094 Ω @ VGS = −4.5 V | Enables direct interface with 3.3 V microcontroller GPIO without level-shifting circuitry. |
| VF = 0.45 V @ 1 A (Schottky) | Reduces reverse-conduction loss by ~40% versus MOSFET body diode (VSD ≈ 1.0 V) in discontinuous conduction mode. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated consumer electronics. |
| Body diode trr = 21–40 ns | Minimizes switching loss during dead-time commutation in half-bridge configurations. |
Applications
| USB Power Delivery Adapter | Wireless Charging Transmitter |
|---|---|
|
Use Scenario: Secondary-side synchronous rectification in 20 V/3 A USB PD flyback converter. IC Role / Device Role / Timing Role: P-channel MOSFET switch with integrated Schottky for low-loss rectification during transformer demagnetization phase. Use Value: Achieves >94% efficiency at full load by replacing 40 V Schottky diode, reducing conduction loss by 0.35 W. |
Use Scenario: Output rectification in 15 W Qi-compliant transmitter with variable-frequency resonant control. IC Role / Device Role / Timing Role: Dual-path rectifier providing Schottky conduction during zero-voltage switching transitions and MOSFET conduction during active regulation. Use Value: Eliminates need for external diode clamp, simplifying BOM while maintaining <1.2 V output ripple under dynamic load steps. |
| Portable Medical Monitor Battery Charger | Bluetooth Headset Boost Converter |
|
Use Scenario: Input protection and reverse-polarity blocking in Li-ion battery charging circuit with 5 V USB input. IC Role / Device Role / Timing Role: High-side P-MOSFET switch with integrated Schottky for fault-tolerant input stage. Use Value: Prevents reverse current flow during hot-plug events while limiting voltage drop to <0.1 V at 2 A, preserving charger IC enable margin. |
Use Scenario: Synchronous rectifier in 3.3 V → 5 V boost converter powering Bluetooth audio DAC. IC Role / Device Role / Timing Role: Low-RDS(on) P-channel switch operating at 1.2 MHz with adaptive gate drive timing. Use Value: Delivers 92% peak efficiency at 300 mA output, extending single-charge runtime by 18 minutes versus discrete MOSFET+diode solution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si4622DY-T1-E3 | Higher RDS(on) = 0.072 Ω @ −4.5 V; same SO-8 footprint and Schottky specs. | Lower efficiency in high-current (>4 A) boost stages due to +28% conduction loss. | Select when cost sensitivity outweighs 0.5% system efficiency gain and thermal margin is ample. |
| DMN2011LFG-7 | N-channel 20 V MOSFET with no integrated diode; requires external Schottky and high-side driver. | Increases component count and layout complexity; unsuitable for space-constrained portable designs. | Choose only if existing N-channel gate driver infrastructure exists and board area permits discrete diode placement. |
Compared with SI4621DY-T1-E3, Si4622DY-T1-E3 trades higher on-resistance for lower unit cost, while DMN2011LFG-7 shifts design burden to external components-making SI4621DY-T1-E3 optimal for compact, high-efficiency synchronous rectification where integrated Schottky and logic-level drive are critical.
Availability
SI4621DY-T1-E3 is available at Aetrix Electronics and suitable for USB PD adapters, wireless charging transmitters, portable medical chargers, and Bluetooth headset power supplies requiring stable component supply and Pb-free compliance.
Supply support for SI4621DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si4621DY product line targets portable power conversion, delivering integrated P-channel MOSFETs with Schottky diodes to reduce size and improve efficiency in space- and thermally constrained DC/DC designs.
FAQ
What is the maximum continuous drain current for SI4621DY-T1-E3 at 70 °C case temperature?
The maximum continuous drain current for SI4621DY-T1-E3 is −5 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under typical PCB mounting conditions and ensures reliable operation within the −55 to +150 °C junction temperature range. SI4621DY-T1-E3 maintains this rating without requiring forced air cooling.
Does SI4621DY-T1-E3 support 3.3 V gate drive in practical applications?
Yes, SI4621DY-T1-E3 is fully compatible with 3.3 V gate drive: its gate threshold voltage ranges from −1 V to −3 V, and RDS(on) is specified at 0.094 Ω with VGS = −4.5 V-well within the swing of a 3.3 V logic signal referenced to source. SI4621DY-T1-E3 delivers usable conduction performance even with marginal negative gate bias, making it ideal for microcontroller-driven portable power stages.
How does the integrated Schottky diode in SI4621DY-T1-E3 differ from the MOSFET's body diode?
The integrated Schottky diode in SI4621DY-T1-E3 has VF = 0.45 V at 1 A, significantly lower than the body diode's VSD = 0.8–1.2 V, reducing forward conduction loss during dead-time intervals. Unlike the body diode, the Schottky exhibits no reverse recovery charge (Qrr = 0), eliminating associated switching loss and EMI. SI4621DY-T1-E3 leverages both paths-Schottky for fast turn-on, MOSFET for low-loss conduction-within one die.
What is the thermal resistance from junction to ambient for SI4621DY-T1-E3 under standard mounting?
Under standard surface-mount conditions on a 1" × 1" FR4 board, SI4621DY-T1-E3 has a maximum junction-to-ambient thermal resistance (RthJA) of 62.5 °C/W for the MOSFET section and 78 °C/W for the Schottky section. These values assume no additional heatsinking and define the upper bound for power dissipation before exceeding TJ(max) = 150 °C. SI4621DY-T1-E3 benefits from the exposed drain pad to improve thermal transfer to the PCB.
Is SI4621DY-T1-E3 pin-compatible with other SO-8 P-channel MOSFETs?
SI4621DY-T1-E3 uses the industry-standard SO-8 outline with G-S-D-K pin assignment (pins 1, 2, 3, 5), but its integrated Schottky cathode (pin 5) and quadruple source connections (pins 2, 6, 7, 8) are unique. Substituting non-integrated SO-8 P-MOSFETs requires circuit redesign to accommodate external diode routing and altered current return paths. SI4621DY-T1-E3 is not a drop-in replacement for generic SO-8 P-channel devices.
SI4621DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 54mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 450 pF @ 10 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2W (Ta), 3.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4621DY-T1-E3 FAQ
1.How can I place an order for SI4621DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4621DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4621DY-T1-E3 reliable?
The price and inventory of SI4621DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4621DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4621DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4621DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4621DY-T1-E3?
SI4621DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4621DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4621DY-T1-E3?
For technical support, including SI4621DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4621DY-T1-E3 requirements.
6.How does Aetrix verify that SI4621DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4621DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4621DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4621DY-T1-E3?
All SI4621DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4621DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4621DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4621DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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