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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4626ADY-T1-E3

Name: SI4626ADY-T1-E3
Brand: Vishay Siliconix
SKU: SI4626ADY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4626ADY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4626ADY-T1-E3.pdf

Description:: MOSFET N-CH 30V 30A 8SO

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Product details

Overview

SI4626ADY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, delivering R_DS(on) = 3.3 mΩ at V_GS = 10 V and 4.1 mΩ at V_GS = 4.5 V, rated for 30 A continuous drain current (T_C = 25 °C), and optimized for low-side DC/DC conversion in notebook and gaming power stages.

For engineers reviewing the SI4626ADY-T1-E3 datasheet, SI4626ADY-T1-E3 pinout, SI4626ADY-T1-E3 application, or SI4626ADY-T1-E3 equivalent, key selection criteria include its 30-V V_DS, 37 nC total gate charge at 4.5 V drive, 100% R_g and UIS tested reliability, and SO-8 thermal performance with R_thJA = 42 °C/W (max).

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g/Q_gd ratio-37 nC total gate charge and 9.8 nC gate-drain charge at V_GS = 4.5 V-enabling efficient synchronous rectification in high-frequency buck converters. Its body diode exhibits t_rr = 38–60 ns and Q_rr = 36–60 nC, supporting hard-switched topologies with minimized recovery loss.

The device operates across –55 °C to +150 °C junction temperature range, with gate threshold voltage V_GS(th) = 1.2–2.5 V and ±20 V gate-source rating, ensuring robust drive compatibility with standard 3.3 V/5 V and 10 V controllers. Thermal resistance from junction-to-foot is R_thJF = 16–21 °C/W, facilitating direct heatsinking through the exposed drain pad in SO-8 layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters
R_DS(on)	3.3 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 15 A, critical for high-current low-voltage outputs
I_D (continuous)	30 A @ T_C = 25 °C - Supports high-current CPU/GPU VRMs without paralleling
Q_g	37 nC @ V_GS = 4.5 V - Matches mid-range PWM controller gate drive capability for <100 kHz–1 MHz operation
t_rr	38–60 ns - Limits reverse recovery energy in synchronous rectifiers, reducing cross-conduction risk
R_thJA	42 °C/W (max) - Defines minimum PCB copper area required for thermal compliance at 3 W dissipation in still air

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for thermal enhancement; dimensions per Vishay Doc #71192: 4.8–5.0 mm × 3.8–4.0 mm × 1.35–1.75 mm height; lead pitch 1.27 mm.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring ≥1.2 V to turn on; low R_g (0.2–1.9 Ω) enables fast edge rates
2, 3, 4, 5, 7, 8	Drain (common)	High-current output path tied to internal die drain and exposed thermal pad; connects to input rail or switch node
6	Source	Return path for load current; referenced to controller ground; used for current sensing in high-side configurations

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure of merit (123 mΩ·nC @ 10 V) for high-efficiency switching
100 % R_g and UIS tested	Ensures gate robustness against overvoltage transients and ruggedness under unclamped inductive switching stress
Halogen-free construction	Meets IEC 61249-2-21 requirements without compromising thermal or electrical performance
Low Q_gd/Q_g ratio	9.8/37 ≈ 0.26 - Reduces Miller plateau time, improving controllability during hard switching

Applications

Notebook CPU VRM	Gaming GPU Power Stage
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD mobile CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 300–1000 kHz with 4.5 V gate drive. Use Value: 3.3 mΩ R_DS(on) minimizes conduction loss in 1–2 V output rails, enabling >95 % efficiency at 20 A.	Use Scenario: Dual-phase or triple-phase VRM powering discrete graphics processing units in gaming laptops. IC Role / Device Role / Timing Role: Low-side switch in high-density, thermally constrained power modules. Use Value: SO-8 exposed drain pad and R_thJF = 16 °C/W allow direct thermal coupling to heatsink, sustaining 25 A continuous under 70 °C case temp.
Point-of-Load DC/DC Converter	Industrial FPGA Core Supply
Use Scenario: Compact 12 V input to 0.8–1.2 V output converter on embedded system boards. IC Role / Device Role / Timing Role: Secondary-side MOSFET in synchronous buck topology operating at 500 kHz. Use Value: 37 nC Q_g at 4.5 V ensures full turn-on within 100 ns using standard gate drivers, minimizing dead-time losses.	Use Scenario: Programmable logic core supply requiring stable, low-noise 1.0 V at up to 18 A in industrial control PLCs. IC Role / Device Role / Timing Role: Low-side switch in isolated or non-isolated buck regulator with tight thermal budget. Use Value: –55 °C to +150 °C operating range and 100 % UIS testing ensure reliability in extended-temperature industrial environments.

Notebook CPU VRM

Gaming GPU Power Stage

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD mobile CPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 300–1000 kHz with 4.5 V gate drive.

Use Value: 3.3 mΩ R_DS(on) minimizes conduction loss in 1–2 V output rails, enabling >95 % efficiency at 20 A.

Use Scenario: Dual-phase or triple-phase VRM powering discrete graphics processing units in gaming laptops.

IC Role / Device Role / Timing Role: Low-side switch in high-density, thermally constrained power modules.

Use Value: SO-8 exposed drain pad and R_thJF = 16 °C/W allow direct thermal coupling to heatsink, sustaining 25 A continuous under 70 °C case temp.

Point-of-Load DC/DC Converter

Industrial FPGA Core Supply

Use Scenario: Compact 12 V input to 0.8–1.2 V output converter on embedded system boards.

IC Role / Device Role / Timing Role: Secondary-side MOSFET in synchronous buck topology operating at 500 kHz.

Use Value: 37 nC Q_g at 4.5 V ensures full turn-on within 100 ns using standard gate drivers, minimizing dead-time losses.

Use Scenario: Programmable logic core supply requiring stable, low-noise 1.0 V at up to 18 A in industrial control PLCs.

IC Role / Device Role / Timing Role: Low-side switch in isolated or non-isolated buck regulator with tight thermal budget.

Use Value: –55 °C to +150 °C operating range and 100 % UIS testing ensure reliability in extended-temperature industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30-V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 3.8 mΩ @ 10 V; Q_g = 42 nC; SO-8 package; no halogen-free marking	Slightly higher conduction loss and gate charge; same thermal footprint but lower avalanche rating (E_AS = 50 mJ vs. 80 mJ)	Acceptable where lower E_AS and absence of halogen-free compliance are acceptable
DMN3026LSD-13	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 35 nC; same SO-8; 100 % R_g tested but no UIS test data published	Better R_DS(on) and Q_g, but lacks documented UIS ruggedness for inductive loads	Preferred for efficiency-critical designs with well-controlled switching waveforms and clamping

Compared with IRF7470PBF and DMN3026LSD-13, the SI4626ADY-T1-E3 offers superior avalanche energy (80 mJ), halogen-free compliance, and guaranteed UIS testing-making it the most robust choice for unclamped inductive switching in notebook and gaming VRMs where reliability under fault conditions is critical.

Availability

SI4626ADY-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, gaming GPU power stages, and point-of-load DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for SI4626ADY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally optimized devices.

The Si4626ADY product line delivers high-current, low-R_DS(on) N-channel MOSFETs for synchronous rectification in compact, high-frequency DC/DC converters targeting portable computing and graphics power systems.

FAQ

What is the maximum continuous drain current rating for SI4626ADY-T1-E3 at 70 °C case temperature?

The SI4626ADY-T1-E3 supports 22.6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under real-world board-level cooling conditions and must be verified against actual PCB layout and airflow in the final design. The SI4626ADY-T1-E3 datasheet confirms this value under steady-state conditions with surface mounting on FR4.

Does SI4626ADY-T1-E3 support 4.5 V gate drive in synchronous buck applications?

Yes, the SI4626ADY-T1-E3 is fully characterized for 4.5 V gate drive: R_DS(on) = 4.1 mΩ (max) and Q_g = 37 nC (typ) at V_GS = 4.5 V, making it suitable for use with 3.3 V and 5 V PWM controllers. The SI4626ADY-T1-E3 gate threshold voltage range (1.2–2.5 V) ensures reliable turn-on with margin, and its low Q_gd enhances controllability at reduced gate voltage.

Is SI4626ADY-T1-E3 halogen-free and RoHS-compliant?

Yes, SI4626ADY-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant (Pb-free), as explicitly stated in the ordering information and features list. The "-E3" suffix denotes lead-free termination, and the device meets all applicable environmental regulations without performance trade-offs-verified in Vishay Document Number 69937, Rev. B.

What is the safe operating area (SOA) limitation for SI4626ADY-T1-E3 at DC operation?

At DC operation, the SI4626ADY-T1-E3 SOA is limited by R_DS(on) and thermal resistance: maximum continuous current drops to 21.5 A at T_A = 25 °C and 17.1 A at T_A = 70 °C due to package power dissipation limits (3.0 W and 1.9 W respectively). The SI4626ADY-T1-E3 SOA curves in the datasheet confirm that DC operation is bounded by thermal saturation, not secondary breakdown.

How does the body diode performance of SI4626ADY-T1-E3 compare to standard Schottky alternatives?

The SI4626ADY-T1-E3 body diode has V_SD = 0.74–1.1 V at I_S = 2.7 A and t_rr = 38–60 ns, offering lower forward drop than many discrete Schottkys at high current but slower recovery. In synchronous rectification, its body diode conducts only during dead time; the SI4626ADY-T1-E3's low Q_rr (36–60 nC) minimizes associated switching loss, making it more efficient than external Schottkys in high-frequency buck converters where gate drive is available.

SI4626ADY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5370 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4626ADY-T1-E3 FAQ

1.How can I place an order for SI4626ADY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4626ADY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4626ADY-T1-E3 reliable?

The price and inventory of SI4626ADY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4626ADY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4626ADY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4626ADY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4626ADY-T1-E3?

SI4626ADY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4626ADY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4626ADY-T1-E3?

For technical support, including SI4626ADY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4626ADY-T1-E3 requirements.

6.How does Aetrix verify that SI4626ADY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4626ADY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4626ADY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4626ADY-T1-E3?

All SI4626ADY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4626ADY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4626ADY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4626ADY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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