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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4626ADY-T1-GE3

Name: SI4626ADY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4626ADY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4626ADY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4626ADY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 30A 8SO

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Product details

Overview

SI4626ADY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, with R_DS(on) = 0.0033 Ω at V_GS = 10 V, 30 A continuous drain current (T_C = 25 °C), and 37 nC total gate charge. It serves as a low-side switch in high-efficiency DC/DC converters for notebook and gaming power supplies.

For engineers reviewing the SI4626ADY-T1-GE3 datasheet, SI4626ADY-T1-GE3 pinout, SI4626ADY-T1-GE3 application, or SI4626ADY-T1-GE3 equivalent, key selection criteria include its 30 V V_DS, ultra-low on-resistance at 4.5 V drive, 100 % R_g and UIS tested reliability, halogen-free compliance, and SO-8 thermal performance under high-current pulsed loads.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous buck topologies. Its gate threshold voltage (1.2–2.5 V) enables robust turn-on with standard 3.3 V or 5 V logic-level drivers, while its 330 pF reverse transfer capacitance (C_rss) supports stable operation under high dV/dt conditions.

The device features a Kelvin-source configuration in SO-8 layout-three source pins (pins 1, 2, 3), three drain pins (pins 4, 5, 6), one gate (pin 7), and one drain (pin 8)-enabling low-inductance source return paths critical for minimizing switching oscillation and improving EMI in high-frequency converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters
R_DS(on) @ 10 V	0.0033 Ω - Enables ≤ 1.5 W conduction loss at 20 A, reducing heatsink requirements in compact designs
I_D (continuous)	30 A @ T_C = 25 °C - Supports high-current output stages without paralleling devices
Q_g @ 4.5 V	37 nC - Low gate charge allows efficient drive from low-power controllers and reduces switching loss at ≥500 kHz
T_J range	−55 to +150 °C - Rated for extended industrial temperature operation in thermally constrained enclosures
R_thJA	42 °C/W max - Defines thermal derating curve for PCB-mounted operation without forced airflow
V_GS(th)	1.2–2.5 V - Ensures reliable enhancement-mode turn-on with 3.3 V microcontroller GPIO or PWM IC outputs

Pinout & Package

SO-8 (MS-012) surface-mount package with exposed drain pad for enhanced thermal dissipation; dimensions per JEDEC MS-012: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (S)	Source	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
4, 5, 6, 8 (D)	Drain	Four drain connections-including pin 8 as dedicated drain tab-provide low-impedance path to PCB copper pour for thermal and power integrity
7 (G)	Gate	Single gate input with 0.2–1.9 Ω gate resistance-supports controlled turn-on/turn-off without external gate resistor in many applications

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × Q_g figure of merit for high-frequency synchronous rectification
100 % R_g tested	Guarantees gate resistance consistency across production lots-critical for predictable switching timing and EMI control
100 % UIS tested	Validates ruggedness against unclamped inductive switching events common in DC/DC converter startup/fault conditions
Halogen-free (IEC 61249-2-21)	Meets RoHS-compliant manufacturing and end-product environmental requirements without compromising thermal or electrical performance
Kelvin-source SO-8 layout	Separates high-current source return from gate drive reference, eliminating source inductance-induced shoot-through risk

Applications

Notebook Power Delivery	Gaming System VRMs
Use Scenario: High-density 12 V → 1.2 V/30 A point-of-load conversion in ultrabook mainboard VRMs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase interleaved buck converter, switching at 600 kHz. Use Value: 0.0033 Ω R_DS(on) limits conduction loss to <1.2 W, enabling 95 % efficiency at full load without active cooling.	Use Scenario: GPU core voltage regulation delivering up to 45 A peak in desktop gaming motherboards. IC Role / Device Role / Timing Role: Low-side switch in 3-phase multiphase controller architecture, operating with 30 ns minimum off-time. Use Value: 37 nC Q_g at 4.5 V ensures clean gate drive with minimal overshoot using integrated FET driver ICs like IR35201.
Industrial DC/DC Modules	Embedded Computing Power Rails
Use Scenario: 24 V input to 5 V/20 A isolated auxiliary supply in programmable logic controller (PLC) backplanes. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology. Use Value: −55 to +150 °C operating range supports operation in sealed enclosures with ambient temperatures up to 85 °C.	Use Scenario: Core power for ARM-based edge AI accelerators requiring stable 0.85 V @ 15 A with tight transient response. IC Role / Device Role / Timing Role: Low-side FET in single-phase buck regulator controlled by TI TPS546D24. Use Value: Kelvin-source pinout minimizes gate loop inductance, preserving stability during 5 A/µs load transients.

Notebook Power Delivery

Gaming System VRMs

Use Scenario: High-density 12 V → 1.2 V/30 A point-of-load conversion in ultrabook mainboard VRMs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase interleaved buck converter, switching at 600 kHz.

Use Value: 0.0033 Ω R_DS(on) limits conduction loss to <1.2 W, enabling 95 % efficiency at full load without active cooling.

Use Scenario: GPU core voltage regulation delivering up to 45 A peak in desktop gaming motherboards.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase multiphase controller architecture, operating with 30 ns minimum off-time.

Use Value: 37 nC Q_g at 4.5 V ensures clean gate drive with minimal overshoot using integrated FET driver ICs like IR35201.

Industrial DC/DC Modules

Embedded Computing Power Rails

Use Scenario: 24 V input to 5 V/20 A isolated auxiliary supply in programmable logic controller (PLC) backplanes.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: −55 to +150 °C operating range supports operation in sealed enclosures with ambient temperatures up to 85 °C.

Use Scenario: Core power for ARM-based edge AI accelerators requiring stable 0.85 V @ 15 A with tight transient response.

IC Role / Device Role / Timing Role: Low-side FET in single-phase buck regulator controlled by TI TPS546D24.

Use Value: Kelvin-source pinout minimizes gate loop inductance, preserving stability during 5 A/µs load transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0037 Ω @ 10 V; higher Q_g = 48 nC; TO-252 package	Larger footprint and higher thermal resistance (R_thJA = 62 °C/W) limit use in space-constrained boards	Prefer SI4626ADY-T1-GE3 where SO-8 mounting density and lower gate charge are required
DMN3026LSD-13	R_DS(on) = 0.0032 Ω @ 10 V; same SO-8; no Kelvin-source layout; Q_gs/Q_gd ratio less optimized	Higher switching losses due to elevated Crss (410 pF) and lack of dedicated source return path	Choose SI4626ADY-T1-GE3 when board-level EMI or sub-50 ns dead-time control is critical

Compared with IRF7470PBF and DMN3026LSD-13, the SI4626ADY-T1-GE3 delivers superior thermal performance in SO-8, lowest gate charge among equivalents, and Kelvin-source architecture that directly improves switching waveform fidelity and system-level efficiency in high-frequency synchronous buck converters.

Availability

SI4626ADY-T1-GE3 is available at Aetrix Electronics and suitable for notebook power delivery, gaming VRMs, and industrial DC/DC modules requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for SI4626ADY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The Si4626ADY product line targets high-efficiency, high-density DC/DC conversion in portable and computing applications, emphasizing ultra-low R_DS(on), fast switching, and robust packaging for thermally demanding environments.

FAQ

What is the maximum continuous drain current rating for SI4626ADY-T1-GE3 at 70 °C case temperature?

The SI4626ADY-T1-GE3 supports 22.6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 30 A rating at 25 °C case temperature and must be applied when designing for sustained high-power operation without additional heatsinking.

Does SI4626ADY-T1-GE3 require an external gate resistor for stable operation in a 600 kHz buck converter?

The SI4626ADY-T1-GE3 has a typical gate resistance (R_g) of 0.95 Ω, and its gate charge profile (37 nC at 4.5 V) supports direct drive from most PWM controllers without mandatory external gate resistors. However, a small series resistor (1–5 Ω) is recommended to damp ringing and control dv/dt in high-noise environments.

Is SI4626ADY-T1-GE3 suitable for use as a high-side switch in a floating gate-drive configuration?

No-the SI4626ADY-T1-GE3 is optimized as a low-side switch. Its SO-8 Kelvin-source layout and gate threshold characteristics are not designed for high-side operation with bootstrap or isolated gate drivers. For high-side applications, Vishay recommends complementary P-channel devices or dedicated high-side N-channel drivers with level-shifting capability.

How does the halogen-free status of SI4626ADY-T1-GE3 impact its thermal performance compared to non-halogen-free variants?

The halogen-free construction of SI4626ADY-T1-GE3 (per IEC 61249-2-21) does not degrade thermal or electrical performance: R_DS(on), power dissipation, and junction-to-case thermal resistance match those of the lead-free-only variant Si4626ADY-T1-E3. Material substitution is limited to molding compound chemistry only.

What is the body diode reverse recovery time (t_rr) of SI4626ADY-T1-GE3, and why is it relevant in synchronous rectification?

The SI4626ADY-T1-GE3 has a typical body diode reverse recovery time (t_rr) of 38 ns at T_J = 25 °C, IF = 5 A, and dI/dt = 100 A/µs. In synchronous buck converters, low t_rr minimizes cross-conduction losses and voltage spikes during the dead-time interval, directly improving efficiency and reducing EMI generation.

SI4626ADY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5370 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4626ADY-T1-GE3 FAQ

1.How can I place an order for SI4626ADY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4626ADY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4626ADY-T1-GE3 reliable?

The price and inventory of SI4626ADY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4626ADY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4626ADY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4626ADY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4626ADY-T1-GE3?

SI4626ADY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4626ADY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4626ADY-T1-GE3?

For technical support, including SI4626ADY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4626ADY-T1-GE3 requirements.

6.How does Aetrix verify that SI4626ADY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4626ADY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4626ADY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4626ADY-T1-GE3?

All SI4626ADY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4626ADY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4626ADY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4626ADY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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