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Vishay Siliconix SI4628DY-T1-GE3
- Part No.:
- SI4628DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4628DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 38A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,219
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Product details
Overview
SI4628DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Gen III power MOSFET monolithically integrated with a Schottky diode in an SO-8 package. It delivers 38 A continuous drain current at TC = 25 °C, RDS(on) of 3.0 mΩ at VGS = 10 V, and 3.8 mΩ at VGS = 4.5 V, enabling high-efficiency synchronous rectification in notebook CPU core power stages.
For engineers reviewing the SI4628DY-T1-GE3 datasheet, SI4628DY-T1-GE3 pinout, SI4628DY-T1-GE3 application, or SI4628DY-T1-GE3 equivalent, key selection criteria include its integrated Schottky body diode (VSD = 0.44–0.53 V), low gate charge (27.5 nC at 4.5 V), and thermal resistance RthJF = 13 °C/W - critical for compact DC-DC converter designs requiring fast switching and low conduction loss.
Technical Context
This device implements a SkyFET® monolithic architecture combining a trench-gate N-channel MOSFET and a co-packaged Schottky diode on a single die. Its gate threshold voltage (1.0–2.5 V) supports logic-level drive, while the 100% UIS-tested ruggedness ensures reliability under inductive load switching.
The SO-8 package enables dual-side cooling via exposed drain pads, and its dynamic parameters - including Ciss = 3450 pF, Crss = 260 pF, and td(off) = 36–70 ns at 10 V gate drive - are optimized for high-frequency buck converter operation up to 1 MHz with minimal switching loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24-V input rails and 12-V output buck stages |
| RDS(on) | 3.0 mΩ @ VGS = 10 V - Enables ≤1.2 W conduction loss at 20 A, reducing heatsink requirements |
| ID (Cont.) | 38 A @ TC = 25 °C - Supports high-current CPU core VRMs without parallel devices |
| Qg | 27.5 nC @ VGS = 4.5 V - Low gate drive power demand for 3.3-V or 5-V controller interfaces |
| VSD | 0.44–0.53 V @ IS = 2 A - Reduces reverse recovery loss vs. standard body diodes in synchronous rectification |
| RthJF | 13 °C/W (typ.) - Enables direct thermal coupling to PCB copper pour for efficient heat extraction |
| trr | 28–55 ns - Fast recovery minimizes shoot-through risk during dead-time transitions |
Pinout & Package
SO-8 narrow-body package per JEDEC MS-012, with exposed drain paddle thermally connected to pins 1, 2, 3, 4, 5, 6, 7, and 8 (all drains). Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Common high-current output node; electrically and thermally tied to exposed pad for low-inductance, high-power routing |
| 5, 6, 7 | Drain (D) | Additional drain terminals reinforcing current sharing and thermal path to PCB |
| 8 | Gate (G) | Control input; requires <1.7 Ω gate resistance to limit ringing and ensure 12–24 ns turn-on delay |
| Source (S) | Internal source connection | Not externally accessible; source node is internal to die and referenced to drain potential via Schottky junction |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® Monolithic Integration | Single-die co-location of MOSFET and Schottky diode eliminates interconnect inductance and mismatch in synchronous rectifiers |
| 100% UIS Tested | Guarantees avalanche energy handling (EAS = 101 mJ) without derating in hard-switched buck converters |
| TrenchFET® Gen III Architecture | Delivers 20% lower RDS(on) vs. prior generation at same die size, improving power density in space-constrained notebooks |
| Halogen-free & RoHS Compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and computing applications |
Applications
| Notebook CPU Core VRM | Buck Converter Secondary Side |
|---|---|
Use Scenario: High-current, high-efficiency point-of-load regulation for Intel/AMD mobile processors. IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter, operating at 300–1000 kHz with 4.5–10 V gate drive. Use Value: 3.0 mΩ RDS(on) and integrated Schottky reduce total power loss by ≥15% vs. discrete MOSFET + external diode solutions. | Use Scenario: Secondary-side switching in isolated DC-DC modules for telecom and server power supplies. IC Role / Device Role / Timing Role: Low-voltage, high-current output switch with fast trr (28–55 ns) enabling tight dead-time control. Use Value: 27.5 nC Qg at 4.5 V allows direct drive from PWM controllers without gate drivers, simplifying layout. |
| GPU Power Delivery | Industrial Motor Drive Half-Bridge |
Use Scenario: Dynamic voltage scaling for discrete graphics processing units in thin-and-light laptops. IC Role / Device Role / Timing Role: High-side or low-side switch in dual-phase buck topology, leveraging SO-8 thermal footprint for dual-sided cooling. Use Value: RthJF = 13 °C/W enables >30 A sustained current with 2 oz copper and 2-in² thermal pad - no heatsink required. | Use Scenario: Low-side switch in 24-V brushed DC motor H-bridge for factory automation actuators. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged transistor handling inductive kickback during PWM commutation. Use Value: 101 mJ EAS rating supports 45 A single-pulse avalanche current, eliminating need for external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | 40 V VDS, 2.3 mΩ RDS(on) @ 10 V, SO-8, but no integrated Schottky diode | Requires external Schottky for synchronous rectification; higher board area and parasitic inductance | Select when higher voltage margin (40 V) is needed and external diode integration is acceptable |
| IRF7759L2TRPBF | 30 V VDS, 2.7 mΩ RDS(on) @ 10 V, SO-8, integrated Schottky, but Qg = 44 nC @ 4.5 V (60% higher) | Higher gate drive power and slower switching; less suitable for >500 kHz operation | Select when lowest RDS(on) is prioritized over switching speed and gate drive efficiency |
Compared with SiR872DP-T1-GE3 and IRF7759L2TRPBF, the SI4628DY-T1-GE3 uniquely balances ultra-low RDS(on), low Qg, and monolithic Schottky integration - making it optimal for high-frequency, high-current synchronous buck stages where thermal density and gate drive simplicity are critical.
Availability
SI4628DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU core VRMs, buck converter secondary-side rectification, and GPU power delivery requiring stable component supply across production lifecycles.
Supply support for SI4628DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency performance.
The SI4628DY-T1-GE3 belongs to Vishay's SkyFET® family, engineered specifically for synchronous rectification in high-frequency DC-DC converters where monolithic integration, low RDS(on), and fast switching are essential.
FAQ
What is the maximum continuous drain current rating for SI4628DY-T1-GE3 at 70 °C case temperature?
The SI4628DY-T1-GE3 supports 30 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under typical PCB mounting conditions and ensures safe operation without exceeding TJ(max) = 150 °C. The SI4628DY-T1-GE3 maintains this rating due to its low RthJF = 13 °C/W and robust monolithic construction.
Does SI4628DY-T1-GE3 have a specified gate threshold voltage range, and how does it affect logic-level drive compatibility?
Yes, the SI4628DY-T1-GE3 has a gate threshold voltage (VGS(th)) range of 1.0 V to 2.5 V at ID = 1 mA, confirming full enhancement with 3.3 V or 5 V logic-level gate drivers. This low threshold enables reliable turn-on in battery-powered and low-voltage control systems. The SI4628DY-T1-GE3 achieves 38 A ID(on) at VGS = 10 V, but remains fully functional down to 4.5 V, where RDS(on) rises only to 3.8 mΩ.
How is the Schottky diode integrated in SI4628DY-T1-GE3, and what is its forward voltage specification?
The SI4628DY-T1-GE3 integrates a monolithic Schottky diode between source and drain using SkyFET® technology - not a discrete die bond. Its forward voltage (VSD) is 0.44–0.53 V at IS = 2 A and TJ = 25 °C, significantly lower than conventional MOSFET body diodes (~0.8–1.2 V). This reduces conduction loss and eliminates reverse recovery charge (Qrr = 21–42 nC), making the SI4628DY-T1-GE3 ideal for high-frequency synchronous rectification.
What is the total gate charge (Qg) of SI4628DY-T1-GE3 at 4.5 V gate drive, and why is this value important for controller selection?
The SI4628DY-T1-GE3 specifies 27.5 nC typical total gate charge at VGS = 4.5 V, ID = 20 A. This low Qg enables direct drive from standard PWM controllers (e.g., TI UCC2897A, ON Semi NCP3120) without external gate drivers, reducing BOM count and layout complexity. Because Qg directly impacts switching loss and drive power, the SI4628DY-T1-GE3's 27.5 nC value supports efficient operation up to 1 MHz in compact VRMs.
Can SI4628DY-T1-GE3 be used in avalanche-rated applications, and what is its single-pulse avalanche energy rating?
Yes, the SI4628DY-T1-GE3 is 100% UIS (unclamped inductive switching) tested with a single-pulse avalanche energy (EAS) rating of 101 mJ and peak avalanche current (IAS) of 45 A. This makes it suitable for hard-switched topologies like flyback or boost converters where inductive energy must be safely absorbed. The SI4628DY-T1-GE3's ruggedness eliminates need for external clamping circuits in many industrial and computing power designs.
SI4628DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 87 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3450 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 7.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4628DY-T1-GE3 FAQ
1.How can I place an order for SI4628DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4628DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4628DY-T1-GE3 reliable?
The price and inventory of SI4628DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4628DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4628DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4628DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4628DY-T1-GE3?
SI4628DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4628DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4628DY-T1-GE3?
For technical support, including SI4628DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4628DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4628DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4628DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4628DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4628DY-T1-GE3?
All SI4628DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4628DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4628DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4628DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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