Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4630DY-T1-E3

Name: SI4630DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4630DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI4630DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4630DY-T1-E3.pdf

Description:: MOSFET N-CH 25V 40A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,774

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI4630DY-T1-E3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Power MOSFET in SO-8 package, optimized for low-side synchronous buck and POL synchronous rectifier applications. It delivers R_DS(on) = 2.7 mΩ at V_GS = 10 V, 36 A continuous drain current (T_C = 25 °C), and 49 nC total gate charge - enabling high-efficiency power conversion in notebook, server, and workstation DC/DC stages.

For engineers reviewing the SI4630DY-T1-E3 datasheet, SI4630DY-T1-E3 pinout, SI4630DY-T1-E3 application, or SI4630DY-T1-E3 equivalent, key selection criteria include its 25-V V_DS rating, ultra-low on-resistance at 4.5-V drive, thermal resistance of 13 °C/W (junction-to-foot), and 100% R_g tested gate resistance for consistent switching timing in high-frequency synchronous topologies.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve enhanced conduction efficiency and fast switching dynamics. Its gate threshold voltage (1.0–2.2 V) supports logic-level drive, while the low C_iss (6670 pF) and Crss (531 pF) enable stable operation with minimal Miller-induced shoot-through risk in high-dV/dt environments.

The device integrates a robust body diode with t_rr = 47–70 ns and Q_rr = 50–75 nC, supporting efficient synchronous rectification without external Schottky supplementation. Thermal design is facilitated by a dedicated drain-exposed foot offering R_thJF = 13 °C/W (steady-state), enabling direct PCB copper thermal coupling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 3.3 V–12 V input rails in point-of-load converters
R_DS(on) @ 10 V	2.7 mΩ - Enables <1 W conduction loss at 20 A, critical for high-current low-voltage outputs
R_DS(on) @ 4.5 V	3.2 mΩ - Ensures usable on-resistance under 5-V gate drive, supporting controller ICs with limited gate voltage swing
Q_g @ 10 V	107.5–161 nC - Defines gate driver power requirement and switching transition time in 300–1000 kHz designs
R_thJF	13 °C/W - Junction-to-foot thermal resistance allows direct heat transfer to PCB copper, reducing need for external heatsinks
I_D (T_C = 25 °C)	40 A - Continuous drain current rating under ideal case-cooling conditions, supporting high-density power stages
t_rr (body diode)	47–70 ns - Fast reverse recovery minimizes commutation losses during synchronous rectification transitions

Pinout & Package

SI4630DY-T1-E3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pad (pin 1–4 and 6–8 connected to drain), enabling low-inductance, high-current routing and efficient thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	All pins electrically tied to internal drain; pins 1–4 and 6–8 form exposed thermal pad - must be soldered to large copper pour for thermal management
5	Gate (G)	Control terminal; requires low-impedance gate driver path to minimize switching losses and oscillation risk
S (Source)	Source (S)	Internal source connection routed to PCB via pin 5 (gate) and drain pins' thermal path - source node is referenced to PCB ground plane

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × Q_g figure of merit for improved efficiency in high-frequency switching
100% R_g tested	Ensures gate resistance consistency (1.5–2.25 Ω), critical for predictable turn-on/turn-off timing across production lots
Exposed drain thermal pad	Enables junction-to-PCB thermal resistance as low as 13 °C/W, eliminating need for discrete thermal vias or heatsinks
Halogen-free construction	Complies with IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated end equipment
Low Q_gd/Q_g ratio	13.6 nC / 49–161 nC enables hard-switching stability with reduced Miller plateau duration and dv/dt immunity

Applications

Notebook CPU VRM Low-Side Switch	Server DDR Memory POL Regulator
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD mobile CPUs with dynamic load steps up to 100 A/µs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz, conducting during bottom-half of switching cycle. Use Value: 2.7 mΩ R_DS(on) at 10 V reduces conduction loss below 0.5 W at 30 A, directly improving battery runtime and thermal margin.	Use Scenario: Point-of-load regulator delivering 1.2 V @ 40 A to DDR4/DDR5 memory subsystems in dual-socket servers with strict transient response requirements. IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved 2-phase buck stage, requiring fast body-diode recovery and low Q_g for tight duty-cycle control. Use Value: 47–70 ns t_rr and 50–75 nC Q_rr minimize dead-time losses and improve light-load efficiency over discrete Schottky alternatives.
Workstation GPU Power Stage	Industrial FPGA Core Supply
Use Scenario: High-density 8-phase VRM powering discrete GPUs in CAD/CAM workstations, where board space and thermal density are constrained. IC Role / Device Role / Timing Role: Low-side FET in each phase, leveraging SO-8 footprint and exposed drain for compact layout and direct thermal coupling to inner-layer copper. Use Value: R_thJF = 13 °C/W allows >35 A continuous operation with 2 oz copper and 6 thermal vias - enabling phase count reduction without derating.	Use Scenario: Field-programmable gate array core supply in industrial control PLCs requiring long-term reliability and wide temperature operation (-40 to +105 °C ambient). IC Role / Device Role / Timing Role: Primary low-side switch in 500 kHz buck converter, selected for guaranteed V_GS(th) (1.0–2.2 V) and -55 to +150 °C T_J range. Use Value: Specified R_DS(on) shift over temperature and 150 °C max T_J ensure stable performance across extended thermal cycles without derating.

Notebook CPU VRM Low-Side Switch

Server DDR Memory POL Regulator

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD mobile CPUs with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz, conducting during bottom-half of switching cycle.

Use Value: 2.7 mΩ R_DS(on) at 10 V reduces conduction loss below 0.5 W at 30 A, directly improving battery runtime and thermal margin.

Use Scenario: Point-of-load regulator delivering 1.2 V @ 40 A to DDR4/DDR5 memory subsystems in dual-socket servers with strict transient response requirements.

IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved 2-phase buck stage, requiring fast body-diode recovery and low Q_g for tight duty-cycle control.

Use Value: 47–70 ns t_rr and 50–75 nC Q_rr minimize dead-time losses and improve light-load efficiency over discrete Schottky alternatives.

Workstation GPU Power Stage

Industrial FPGA Core Supply

Use Scenario: High-density 8-phase VRM powering discrete GPUs in CAD/CAM workstations, where board space and thermal density are constrained.

IC Role / Device Role / Timing Role: Low-side FET in each phase, leveraging SO-8 footprint and exposed drain for compact layout and direct thermal coupling to inner-layer copper.

Use Value: R_thJF = 13 °C/W allows >35 A continuous operation with 2 oz copper and 6 thermal vias - enabling phase count reduction without derating.

Use Scenario: Field-programmable gate array core supply in industrial control PLCs requiring long-term reliability and wide temperature operation (-40 to +105 °C ambient).

IC Role / Device Role / Timing Role: Primary low-side switch in 500 kHz buck converter, selected for guaranteed V_GS(th) (1.0–2.2 V) and -55 to +150 °C T_J range.

Use Value: Specified R_DS(on) shift over temperature and 150 °C max T_J ensure stable performance across extended thermal cycles without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7478PBF	R_DS(on) = 3.2 mΩ @ 10 V; higher Q_g = 22 nC (at 10 V); SO-8 but non-exposed drain	Lacks dedicated thermal foot - requires more PCB area and vias for equivalent thermal performance	Prefer when cost sensitivity outweighs thermal density needs and gate drive strength is limited
DMN2020LSD-13	R_DS(on) = 2.0 mΩ @ 4.5 V; lower V_DS = 20 V; same SO-8 footprint with exposed drain	Not rated for 25-V bus transients - unsuitable for 12-V input systems with overshoot	Select only for 5-V or 3.3-V input POL where 20-V rating is sufficient and 4.5-V drive dominates

Compared with IRF7478PBF and DMN2020LSD-13, SI4630DY-T1-E3 uniquely balances 25-V robustness, ultra-low 4.5-V R_DS(on), and integrated thermal path - making it optimal for space-constrained, high-current synchronous buck stages where both voltage margin and thermal efficiency are critical.

Availability

SI4630DY-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server DDR memory POL regulators, and workstation GPU power stages requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SI4630DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The Si4630DY product line targets high-efficiency, high-density DC/DC conversion in computing infrastructure - engineered specifically for low-side synchronous rectification with emphasis on thermal performance, gate drive compatibility, and transient robustness.

FAQ

What is the maximum continuous drain current rating for SI4630DY-T1-E3 at 70 °C case temperature?

The SI4630DY-T1-E3 supports 32 A continuous drain current at T_C = 70 °C, per Vishay's Absolute Maximum Ratings table. This derating reflects thermal limits under real-world heatsinking conditions and must be validated against actual PCB layout, copper area, and airflow. The SI4630DY-T1-E3 datasheet specifies this value explicitly for thermal design margining.

Does SI4630DY-T1-E3 support 4.5-V gate drive in high-frequency synchronous buck applications?

Yes, SI4630DY-T1-E3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 3.2 mΩ (typ.) and Q_g = 49 nC (typ.). Its 1.0–2.2 V gate threshold ensures reliable turn-on with standard 5-V PWM controllers, and low Q_gd/Q_g ratio improves hard-switching stability - making SI4630DY-T1-E3 suitable for 500–1000 kHz designs.

How is thermal management implemented for SI4630DY-T1-E3 given its SO-8 package?

SI4630DY-T1-E3 uses an SO-8 package with pins 1–4 and 6–8 internally connected to the drain and forming an exposed thermal pad. Effective thermal management requires soldering this pad to a minimum 100 mm² copper pour with ≥6 thermal vias (0.3 mm diameter) to inner ground/power planes. The SI4630DY-T1-E3 achieves R_thJF = 13 °C/W under these conditions.

Is SI4630DY-T1-E3 qualified for lead-free and halogen-free manufacturing processes?

Yes, SI4630DY-T1-E3 is lead (Pb)-free and halogen-free per IEC 61249-2-21, as confirmed in the Vishay ordering information and Features section. The "-E3" suffix denotes lead-free termination, and the "-GE3" variant adds halogen-free compliance - both meet JEDEC J-STD-020 moisture sensitivity level 1 requirements.

What body diode parameters are specified for SI4630DY-T1-E3, and why do they matter in synchronous rectification?

The SI4630DY-T1-E3 body diode has V_SD = 0.72–1.1 V at I_S = 3 A, t_rr = 47–70 ns, and Q_rr = 50–75 nC. These values directly impact dead-time conduction loss and voltage overshoot during synchronous FET turn-on. Tight t_rr and Q_rr specs make SI4630DY-T1-E3 viable for high-efficiency synchronous rectification without external diodes.

SI4630DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 161 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 6670 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 7.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4630DY-T1-E3 FAQ

1.How can I place an order for SI4630DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4630DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4630DY-T1-E3 reliable?

The price and inventory of SI4630DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4630DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4630DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4630DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4630DY-T1-E3?

SI4630DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4630DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4630DY-T1-E3?

For technical support, including SI4630DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4630DY-T1-E3 requirements.

6.How does Aetrix verify that SI4630DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4630DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4630DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4630DY-T1-E3?

All SI4630DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4630DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4630DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4630DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …