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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4630DY-T1-GE3

Name: SI4630DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4630DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4630DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4630DY-T1-GE3.pdf

Description:: MOSFET N-CH 25V 40A 8SO

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Product details

Overview

SI4630DY-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® power MOSFET in SO-8 package, optimized for low-side synchronous buck and POL synchronous rectifier applications. It delivers R_DS(on) = 2.7 mΩ at V_GS = 10 V, 36 A continuous drain current (T_C = 25 °C), and 49 nC total gate charge - enabling high-efficiency, high-density DC/DC conversion in notebook, server, and workstation power stages.

For engineers reviewing the SI4630DY-T1-GE3 datasheet, SI4630DY-T1-GE3 pinout, SI4630DY-T1-GE3 application, or SI4630DY-T1-GE3 equivalent, key selection criteria include its halogen-free construction per IEC 61249-2-21, 100% R_g tested gate resistance, and validated thermal performance with R_thJF = 13 °C/W (steady state) for robust thermal management in compact layouts.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance and fast switching dynamics. Its gate threshold voltage (V_GS(th) = 1.0–2.2 V) supports direct drive from 3.3 V and 5 V controllers, while the low Q_gd/Q_g ratio (13.6 nC / 49 nC at 4.5 V) minimizes Miller-induced switching losses in hard-switched topologies.

The device integrates a robust body diode with t_rr = 47–70 ns and Q_rr = 50–75 nC, enabling efficient synchronous rectification without external Schottky diodes. Its SO-8 footprint provides standardized PCB layout compatibility and thermal coupling to copper planes via the exposed drain pad (Pin 1–4, 6–8).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage suitable for 12 V input bus and sub-12 V POL rails
R_DS(on)	2.7 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-current CPU/GPU VRMs
I_D (continuous)	36 A @ T_C = 25 °C - Supports high-current low-side switching in multi-phase buck converters
Q_g	49 nC @ V_GS = 4.5 V - Low gate drive energy reduces controller loading and improves efficiency at 3.3 V logic levels
R_thJF	13 °C/W (steady state) - Enables direct thermal path from junction to PCB copper, simplifying heatsinking
t_rr	47 ns - Fast body diode recovery minimizes shoot-through risk and reverse recovery loss in synchronous rectifiers
V_GS(th)	1.0–2.2 V - Ensures reliable turn-on with standard PWM controllers and avoids false triggering at noise margins

Pinout & Package

SI4630DY-T1-GE3 uses the standard SO-8 (MS-012) surface-mount package with exposed drain pads (Pins 1–4 and 6–8) for enhanced thermal dissipation. The package measures 4.9 mm × 3.9 mm × 1.55 mm (L × W × H) with 1.27 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally connected to common drain terminal; soldered to large copper pour for thermal and current handling
5	Gate (G)	Control input; requires low-inductance routing and gate resistor (R_g = 1.5–2.25 Ω typical) for EMI control
Source (S)	Source (S)	Not a discrete pin - source connection made through internal die bonding; referenced externally via PCB trace tied to S-node of driver circuit

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for space-constrained VRM designs
100% R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching speed
Halogen-free construction	Complies with IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated end equipment
Exposed drain thermal pad	Provides low-impedance thermal path to PCB, enabling >3 W power dissipation without external heatsink

Applications

Notebook CPU/GPU VRM	Server Memory Regulator
Use Scenario: High-current, multi-phase buck converter supplying core voltage to mobile CPUs and integrated GPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with tight dead-time control. Use Value: 2.7 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 4.5 mΩ MOSFETs, directly improving battery runtime and thermal headroom.	Use Scenario: Point-of-load regulator delivering stable 1.2 V to DDR4/DDR5 memory modules in dual-socket servers. IC Role / Device Role / Timing Role: Low-side switch in interleaved buck stage, synchronized to high-side FET with precise gate timing. Use Value: 49 nC Q_g at 4.5 V enables clean switching with standard 3.3 V PWM controllers, reducing gate driver complexity and BOM cost.
Workstation GPU Power Stage	POL Synchronous Rectifier
Use Scenario: High-power graphics card with multi-rail VRM delivering up to 400 W to GPU die and memory. IC Role / Device Role / Timing Role: Low-side switch in 6+2 phase topology, thermally coupled to copper-backed heatsink via exposed drain. Use Value: R_thJF = 13 °C/W allows sustained 30 A operation with <40 °C junction rise over ambient, eliminating need for forced air cooling.	Use Scenario: Secondary-side synchronous rectification in isolated DC/DC modules for telecom and industrial power supplies. IC Role / Device Role / Timing Role: Body-diode-replacement switch driven by transformer-coupled or active gate control signals. Use Value: 47 ns t_rr and 50 nC Q_rr minimize reverse recovery loss and EMI, increasing overall converter efficiency by 0.8–1.2% at full load.

Notebook CPU/GPU VRM

Server Memory Regulator

Use Scenario: High-current, multi-phase buck converter supplying core voltage to mobile CPUs and integrated GPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with tight dead-time control.

Use Value: 2.7 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 4.5 mΩ MOSFETs, directly improving battery runtime and thermal headroom.

Use Scenario: Point-of-load regulator delivering stable 1.2 V to DDR4/DDR5 memory modules in dual-socket servers.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck stage, synchronized to high-side FET with precise gate timing.

Use Value: 49 nC Q_g at 4.5 V enables clean switching with standard 3.3 V PWM controllers, reducing gate driver complexity and BOM cost.

Workstation GPU Power Stage

POL Synchronous Rectifier

Use Scenario: High-power graphics card with multi-rail VRM delivering up to 400 W to GPU die and memory.

IC Role / Device Role / Timing Role: Low-side switch in 6+2 phase topology, thermally coupled to copper-backed heatsink via exposed drain.

Use Value: R_thJF = 13 °C/W allows sustained 30 A operation with <40 °C junction rise over ambient, eliminating need for forced air cooling.

Use Scenario: Secondary-side synchronous rectification in isolated DC/DC modules for telecom and industrial power supplies.

IC Role / Device Role / Timing Role: Body-diode-replacement switch driven by transformer-coupled or active gate control signals.

Use Value: 47 ns t_rr and 50 nC Q_rr minimize reverse recovery loss and EMI, increasing overall converter efficiency by 0.8–1.2% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 3.2 mΩ @ 10 V; higher Q_g = 62 nC; TO-252 package	Larger footprint and higher thermal resistance (R_thJA = 62 °C/W) limit use in dense VRMs	Preferred where board space permits and lower gate charge is not critical
DMN3020LSD-13	R_DS(on) = 2.8 mΩ @ 10 V; SO-8; Q_g = 42 nC; no halogen-free certification	Similar electrical specs but lacks IEC 61249-2-21 compliance for green electronics programs	Selected when halogen-free requirement is waived and gate drive margin is prioritized

Compared with IRF7470PBF and DMN3020LSD-13, SI4630DY-T1-GE3 offers the lowest R_thJF (13 °C/W), verified halogen-free status, and balanced Q_g/R_DS(on) for high-frequency, high-density synchronous rectification - making it optimal for thermally constrained notebook and server VRMs.

Availability

SI4630DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server memory regulators, and workstation GPU power stages requiring stable component supply, halogen-free compliance, and high-current low-side switching capability.

Supply support for SI4630DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si4630DY product line targets high-frequency, high-current DC/DC conversion in computing and communications infrastructure, designed specifically for low-R_DS(on), low-Q_g, and thermally optimized synchronous rectification.

FAQ

What is the maximum continuous drain current rating for SI4630DY-T1-GE3 at T_C = 70 °C?

The SI4630DY-T1-GE3 supports 32 A continuous drain current at case temperature (T_C) = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal constraints and assumes proper PCB copper area and airflow. At T_C = 25 °C, the rating increases to 40 A, while ambient-limited operation (T_A = 25 °C) yields 27 A. Engineers must validate thermal design using R_thJF = 13 °C/W and actual board layout.

Does SI4630DY-T1-GE3 have a specified avalanche energy rating?

Yes, SI4630DY-T1-GE3 has a rated single-pulse avalanche energy (E_AS) of 45 mJ, measured under L = 0.1 mH with I_AS = 30 A. This rating applies to transient overvoltage events such as inductive switching spikes and is validated per JEDEC standards. The device also specifies a single-pulse avalanche current of 30 A, confirming ruggedness in hard-switched applications where voltage overshoot may occur during turn-off.

Is SI4630DY-T1-GE3 compatible with 3.3 V gate drive in synchronous buck applications?

Yes, SI4630DY-T1-GE3 is fully compatible with 3.3 V gate drive: its V_GS(th) range (1.0–2.2 V) ensures reliable turn-on, and R_DS(on) = 3.2 mΩ at V_GS = 4.5 V supports low-loss operation even below 5 V. With Q_g = 49 nC at 4.5 V, the gate drive power demand remains manageable for standard 3.3 V PWM controllers - confirmed in Vishay's Application Note 826 for SO-8 layout and drive optimization.

What is the thermal resistance from junction to foot (R_thJF) for SI4630DY-T1-GE3, and why does it matter?

SI4630DY-T1-GE3 has a typical R_thJF of 13 °C/W (steady state), representing the thermal resistance from silicon junction to the exposed drain pad (foot). This parameter is critical because it defines the dominant heat path in SO-8 power MOSFETs - unlike R_thJA, which depends heavily on board layout. A low R_thJF enables predictable thermal performance when the drain pad is soldered to large copper areas, allowing designers to achieve >3 W dissipation without heatsinks in compact VRMs.

How does the body diode performance of SI4630DY-T1-GE3 impact synchronous rectifier design?

The SI4630DY-T1-GE3 body diode features t_rr = 47–70 ns and Q_rr = 50–75 nC at T_J = 25 °C, enabling efficient synchronous rectification without external diodes. Its low reverse recovery charge reduces switching loss and EMI during dead-time transitions, while V_SD = 0.72–1.1 V at I_S = 3 A ensures minimal forward conduction loss during startup or light-load conditions. These characteristics make SI4630DY-T1-GE3 suitable for high-frequency POL converters where body diode conduction is unavoidable during control loop transients.

SI4630DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 161 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 6670 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 7.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4630DY-T1-GE3 FAQ

1.How can I place an order for SI4630DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4630DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4630DY-T1-GE3 reliable?

The price and inventory of SI4630DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4630DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4630DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4630DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4630DY-T1-GE3?

SI4630DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4630DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4630DY-T1-GE3?

For technical support, including SI4630DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4630DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4630DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4630DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4630DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4630DY-T1-GE3?

All SI4630DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4630DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4630DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4630DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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