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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4634DY-T1-E3

Name: SI4634DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4634DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4634DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4634DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 24.5A 8SO

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Product details

Overview

SI4634DY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, with R_DS(on) = 0.0052 Ω at V_GS = 10 V, 24.5-A continuous drain current, and 21.5-nC total gate charge-designed for high-efficiency synchronous rectification in notebook DC/DC converters.

For engineers reviewing the SI4634DY-T1-E3 datasheet, SI4634DY-T1-E3 pinout, SI4634DY-T1-E3 application, or SI4634DY-T1-E3 equivalent, key selection criteria include low R_DS(on) at 4.5 V (0.0067 Ω), 100% R_g and UIS tested reliability, halogen-free compliance per IEC 61249-2-21, and SO-8 thermal performance under TC = 70 °C.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 21.5 nC at 4.5 V drive and t_f = 8–16 ns. Its body diode exhibits V_SD = 0.75–1.1 V at I_S = 3 A and t_rr = 30–60 ns, supporting efficient reverse recovery in synchronous buck topologies.

The device operates across –55 °C to +150 °C junction temperature, with R_thJA = 39–50 °C/W (t ≤ 10 s) and R_thJF = 18–22 °C/W (steady state), enabling use on standard FR4 PCBs without external heatsinking in moderate-power notebook power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 5 V–12 V input rails in point-of-load converters
R_DS(on) @ 10 V	0.0052 Ω - Enables <125 mW conduction loss at 15 A, critical for >95% efficiency targets
R_DS(on) @ 4.5 V	0.0067 Ω - Ensures low-loss operation with 5 V gate drive from standard controller ICs
Q_g @ 4.5 V	21.5 nC - Supports high-frequency switching (>500 kHz) with manageable gate drive power
I_D (continuous)	24.5 A @ T_C = 25 °C - Sustains peak load currents in compact notebook VRMs
t_rr	30–60 ns - Minimizes body-diode switching loss during dead-time in synchronous rectifiers
R_thJA	39–50 °C/W - Defines thermal derating on 1" × 1" FR4; enables 2.5 W dissipation at T_A = 25 °C

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for enhanced thermal conduction; 5.0 mm × 4.0 mm footprint, 1.75 mm max height.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires <21.5 nC charge for full enhancement; R_g = 0.75–1.5 Ω
2 (S)	Source	Power return node; tied to ground plane; body diode anode
3 (S)	Source	Parallel source connection to reduce bond-wire inductance and improve current sharing
4 (S)	Source	Third source terminal for low-inductance PCB layout in high-dI/dt applications
5 (D)	Drain	Main power output node; connected to exposed pad for thermal and electrical path to PCB copper
6 (D)	Drain	Second drain terminal; shares current with Pin 5 and exposed pad
7 (D)	Drain	Third drain terminal; enhances current handling and thermal spreading
8 (D)	Drain	Fourth drain terminal; completes quad-drain configuration for low R_DS(on) and low L_PD

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.0052 Ω R_DS(on) at 10 V in SO-8, outperforming planar MOSFETs by >30 % in on-resistance density
100 % R_g and UIS tested	Guarantees gate robustness against transient overvoltage and avalanche energy survival up to 45 mJ
Halogen-free construction	Meets IEC 61249-2-21; eliminates brominated flame retardants without compromising package integrity
Exposed drain pad	Reduces R_thJF to 18–22 °C/W, enabling 5.7 W power dissipation at T_C = 25 °C
Low Q_gd/Q_g ratio	Q_gd = 6.2 nC of total Q_g = 21.5 nC → 29 % - improves hard-switching EMI and dV/dt immunity

Applications

Notebook VRM High-Side Switch	Synchronous Buck Rectifier
Use Scenario: Primary-side switch in 5 V–12 V input, 1–3 V output multiphase buck converter powering CPU/GPU core rails. IC Role / Device Role / Timing Role: High-side power switch controlled by PWM signal; conducts during on-time, blocks during off-time. Use Value: 0.0052 Ω R_DS(on) limits conduction loss to <1.2 W at 15 A, directly improving system efficiency and thermal margin.	Use Scenario: Secondary-side synchronous rectifier replacing Schottky diode in notebook adapter or motherboard DC/DC stage. IC Role / Device Role / Timing Role: Low-side active rectifier driven complementary to high-side; conducts during freewheeling interval. Use Value: 0.0067 Ω R_DS(on) at 4.5 V gate drive reduces forward drop vs. 0.4 V Schottky, cutting rectifier loss by >60 % at 10 A.
Buck Converter Power Stage	DC/DC Module Internal Switch
Use Scenario: Integrated power stage in compact 12 V input, 1.8 V output buck regulator for DDR memory or chipset supply. IC Role / Device Role / Timing Role: Main switching element in discrete or hybrid power stage; handles full load current and switching transitions. Use Value: 21.5 nC Q_g at 4.5 V allows clean turn-on with standard gate drivers, minimizing shoot-through risk and gate loss.	Use Scenario: Internal high-efficiency switch in sealed, thermally constrained DC/DC modules for embedded computing. IC Role / Device Role / Timing Role: Primary conduction path; optimized for minimal R_DS(on) and thermal resistance in confined space. Use Value: R_thJF = 18–22 °C/W enables 5.7 W dissipation without external heatsink, reducing module size and BOM count.

Notebook VRM High-Side Switch

Synchronous Buck Rectifier

Use Scenario: Primary-side switch in 5 V–12 V input, 1–3 V output multiphase buck converter powering CPU/GPU core rails.

IC Role / Device Role / Timing Role: High-side power switch controlled by PWM signal; conducts during on-time, blocks during off-time.

Use Value: 0.0052 Ω R_DS(on) limits conduction loss to <1.2 W at 15 A, directly improving system efficiency and thermal margin.

Use Scenario: Secondary-side synchronous rectifier replacing Schottky diode in notebook adapter or motherboard DC/DC stage.

IC Role / Device Role / Timing Role: Low-side active rectifier driven complementary to high-side; conducts during freewheeling interval.

Use Value: 0.0067 Ω R_DS(on) at 4.5 V gate drive reduces forward drop vs. 0.4 V Schottky, cutting rectifier loss by >60 % at 10 A.

Buck Converter Power Stage

DC/DC Module Internal Switch

Use Scenario: Integrated power stage in compact 12 V input, 1.8 V output buck regulator for DDR memory or chipset supply.

IC Role / Device Role / Timing Role: Main switching element in discrete or hybrid power stage; handles full load current and switching transitions.

Use Value: 21.5 nC Q_g at 4.5 V allows clean turn-on with standard gate drivers, minimizing shoot-through risk and gate loss.

Use Scenario: Internal high-efficiency switch in sealed, thermally constrained DC/DC modules for embedded computing.

IC Role / Device Role / Timing Role: Primary conduction path; optimized for minimal R_DS(on) and thermal resistance in confined space.

Use Value: R_thJF = 18–22 °C/W enables 5.7 W dissipation without external heatsink, reducing module size and BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30-V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0055 Ω @ 10 V; Q_g = 24 nC; SO-8 but no exposed drain pad	Higher R_thJA (62 °C/W) limits power handling on same PCB area	Prefer SI4634DY-T1-E3 where thermal performance and low Q_g are critical
DMN3025LSD-13	R_DS(on) = 0.0025 Ω @ 10 V; dual-N in SO-8; higher cost and larger die	Designed for dual-switch configurations; not a single-device drop-in	Select SI4634DY-T1-E3 for cost-sensitive single-switch notebook VRMs requiring proven reliability

Compared with IRF7470PBF and DMN3025LSD-13, the SI4634DY-T1-E3 delivers superior thermal performance via its exposed drain pad and lower gate charge for faster switching, while maintaining optimal cost/performance balance for single-N high-current notebook power stages.

Availability

SI4634DY-T1-E3 is available at Aetrix Electronics and suitable for notebook VRMs, synchronous buck converters, and DC/DC power modules requiring stable component supply, RoHS-compliant packaging, and lead-free assembly compatibility.

Supply support for SI4634DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The Si4634DY product line delivers high-current, low-R_DS(on) N-channel MOSFETs optimized for efficiency-critical DC/DC conversion in portable computing and power supply applications.

FAQ

What is the maximum continuous drain current rating for SI4634DY-T1-E3 at 70 °C case temperature?

The SI4634DY-T1-E3 supports 19.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area and airflow. The SI4634DY-T1-E3 maintains R_DS(on) stability across this range due to its trench-gate design.

Does SI4634DY-T1-E3 have a guaranteed avalanche rating?

Yes, the SI4634DY-T1-E3 is rated for single-pulse avalanche energy E_AS = 45 mJ and avalanche current I_AS = 30 A (L = 0.1 mH). These values are production-tested per Vishay's 100 % UIS test requirement. The SI4634DY-T1-E3 withstands transient overvoltage events common in buck converter switching nodes without failure.

Is SI4634DY-T1-E3 compatible with standard SO-8 footprints and reflow profiles?

Yes, the SI4634DY-T1-E3 uses JEDEC MS-012 SO-8 package with 1.27 mm pitch and conforms to IPC/JEDEC J-STD-020 moisture sensitivity level 1. It supports standard Pb-free reflow profiles (peak 260 °C) and matches recommended minimum pads per Vishay Application Note 826. The SI4634DY-T1-E3 requires no layout modification versus generic SO-8 MOSFETs.

What is the typical body diode forward voltage of SI4634DY-T1-E3 at 3 A?

The SI4634DY-T1-E3 exhibits V_SD = 0.75–1.1 V at I_S = 3 A and T_J = 25 °C, as measured in the Drain-Source Body Diode Characteristics section. This low forward drop-combined with t_rr = 30–60 ns-makes the SI4634DY-T1-E3 effective as a synchronous rectifier where body diode conduction occurs during dead time.

How does the gate charge profile of SI4634DY-T1-E3 affect PWM controller selection?

The SI4634DY-T1-E3 has Q_g = 21.5 nC at V_GS = 4.5 V and Q_gd = 6.2 nC, enabling use with low-power gate drivers such as the TI UCC27517 or Onsemi NCP3420. Its low Q_gd/Q_g ratio (29 %) reduces Miller plateau duration, easing timing control in high-frequency (>1 MHz) controllers. The SI4634DY-T1-E3 avoids excessive gate drive loss even at 1-MHz switching.

SI4634DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3150 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 5.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4634DY-T1-E3 FAQ

1.How can I place an order for SI4634DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4634DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4634DY-T1-E3 reliable?

The price and inventory of SI4634DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4634DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4634DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4634DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4634DY-T1-E3?

SI4634DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4634DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4634DY-T1-E3?

For technical support, including SI4634DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4634DY-T1-E3 requirements.

6.How does Aetrix verify that SI4634DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4634DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4634DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4634DY-T1-E3?

All SI4634DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4634DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4634DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4634DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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