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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4634DY-T1-GE3

Name: SI4634DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4634DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4634DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4634DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 24.5A 8SO

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Product details

Overview

SI4634DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, with R_DS(on) = 0.0052 Ω at V_GS = 10 V, 24.5 A continuous drain current at T_C = 25 °C, and 21.5 nC total gate charge - optimized for synchronous rectification in buck converters for notebook power systems.

For engineers reviewing the SI4634DY-T1-GE3 datasheet, SI4634DY-T1-GE3 pinout, SI4634DY-T1-GE3 application, or SI4634DY-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, 100% UIS testing, halogen-free compliance per IEC 61249-2-21, and thermal resistance R_thJF = 18 °C/W (steady state).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve high current density and low conduction loss. Its gate threshold voltage (1.4–2.6 V) enables robust 4.5 V logic-level drive compatibility, while the 3150 pF input capacitance and 166 pF reverse transfer capacitance support fast switching in high-frequency DC/DC topologies.

The device integrates a low-forward-voltage body diode (V_SD = 0.75–1.1 V at I_S = 3 A) with 30–60 ns reverse recovery time, enabling efficient synchronous rectification without external Schottky diodes. Thermal design is supported by validated junction-to-foot (R_thJF) and junction-to-ambient (R_thJA) resistance values under defined PCB mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in notebook VRMs.
R_DS(on) @ 10 V	0.0052 Ω - Enables ≤1.3 W conduction loss at 20 A, critical for thermally constrained laptop power stages.
R_DS(on) @ 4.5 V	0.0067 Ω - Ensures full enhancement with standard 5 V GPIO or PWM controller outputs.
Q_g	21.5 nC (at 4.5 V) - Determines gate driver power requirement and switching loss in 300–1000 kHz buck converters.
I_D (continuous)	24.5 A @ T_C = 25 °C - Sustains peak load currents in dual-phase CPU core VRMs without derating.
R_thJF	18 °C/W (max) - Defines minimum heatsinking needed when mounted on copper pads for junction temperature control.
E_AS
45 mJ - Specifies single-pulse avalanche energy handling capability during inductive turn-off transients.

Pinout & Package

SO-8 (narrow-body, JEDEC MS-012), surface-mount package with exposed drain pad for thermal conduction. Pin 1–8 arranged in dual-row configuration; pins 1, 2, 3, 5, 6, 7 are source terminals; pin 4 is gate; pins 8 and substrate are drain-connected.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Source (S)	Parallel source connections reduce bond-wire inductance and improve current sharing in high-di/dt operation.
4	Gate (G)	Single gate input with 0.75–1.5 Ω intrinsic gate resistance - limits dV/dt-induced shoot-through risk.
8 + Exposed Pad	Drain (D)	Thermally and electrically connected drain terminal - requires soldered thermal pad for R_thJF performance.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 30 V rating with sub-6 mΩ R_DS(on), achieving higher power density than planar MOSFETs in same footprint.
100 % R_g and UIS tested	Each unit verified for gate resistance consistency and unclamped inductive switching robustness - eliminates field failure modes in hard-switched converters.
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS+ requirements for consumer electronics without compromising thermal or electrical performance.
Low Q_gd/Q_g ratio	6.2 nC / 21.5 nC ≈ 0.29 - improves Miller immunity and reduces switching loss during hard commutation.

Applications

Notebook CPU Core VRM	Buck Converter Secondary Side
Use Scenario: High-efficiency, space-constrained 1–2 phase voltage regulator supplying Intel/AMD mobile processors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–1000 kHz with 4.5 V gate drive. Use Value: 0.0067 Ω R_DS(on) at 4.5 V minimizes conduction loss while maintaining <1.5 W dissipation at 20 A output.	Use Scenario: Secondary-side switch in isolated DC/DC converter for laptop adapter or embedded system auxiliary rail. IC Role / Device Role / Timing Role: Main power switch in synchronous rectification topology replacing Schottky diode. Use Value: Body diode V_SD = 0.75 V and t_rr = 30 ns enable >95 % efficiency at 12 V output, 10 A load.
Industrial DC/DC Module	USB-C PD Power Stage
Use Scenario: Compact 24 V input, 5–12 V output industrial DC/DC module requiring high reliability over -40 to +125 °C. IC Role / Device Role / Timing Role: Primary-side high-current switch in non-isolated buck stage with forced-air cooling. Use Value: 30 V V_DS and 150 °C T_J(max) support wide input transients and extended thermal margin.	Use Scenario: 20 V/5 A USB-C Power Delivery output stage in portable docking station or monitor. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck-boost or buck converter. Use Value: Halogen-free and lead-free construction satisfies IEC 62368-1 safety certification requirements for end-user devices.

Notebook CPU Core VRM

Buck Converter Secondary Side

Use Scenario: High-efficiency, space-constrained 1–2 phase voltage regulator supplying Intel/AMD mobile processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–1000 kHz with 4.5 V gate drive.

Use Value: 0.0067 Ω R_DS(on) at 4.5 V minimizes conduction loss while maintaining <1.5 W dissipation at 20 A output.

Use Scenario: Secondary-side switch in isolated DC/DC converter for laptop adapter or embedded system auxiliary rail.

IC Role / Device Role / Timing Role: Main power switch in synchronous rectification topology replacing Schottky diode.

Use Value: Body diode V_SD = 0.75 V and t_rr = 30 ns enable >95 % efficiency at 12 V output, 10 A load.

Industrial DC/DC Module

USB-C PD Power Stage

Use Scenario: Compact 24 V input, 5–12 V output industrial DC/DC module requiring high reliability over -40 to +125 °C.

IC Role / Device Role / Timing Role: Primary-side high-current switch in non-isolated buck stage with forced-air cooling.

Use Value: 30 V V_DS and 150 °C T_J(max) support wide input transients and extended thermal margin.

Use Scenario: 20 V/5 A USB-C Power Delivery output stage in portable docking station or monitor.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck-boost or buck converter.

Use Value: Halogen-free and lead-free construction satisfies IEC 62368-1 safety certification requirements for end-user devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0055 Ω @ 10 V; Q_g = 24 nC; SO-8 package but no exposed drain pad.	Higher R_thJA (62 °C/W vs. 50 °C/W max) limits power handling on minimal PCB copper.	Prefer SI4634DY-T1-GE3 where thermal management relies on drain-pad soldering.
DMN3020LSD-13	R_DS(on) = 0.0045 Ω @ 10 V; Q_g = 28 nC; dual-N SO-8 with shared source - not pin-compatible.	Requires PCB redesign due to different pinout and dual-device integration.	Choose SI4634DY-T1-GE3 for single-device simplicity and validated SO-8 layout compatibility.

Compared with IRF7470PBF and DMN3020LSD-13, the SI4634DY-T1-GE3 delivers superior thermal performance via its exposed drain pad, lower gate charge at 4.5 V drive, and fully validated 100 % UIS robustness - making it optimal for thermally dense notebook and USB-C PD designs where layout reuse and reliability are critical.

Availability

SI4634DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, buck converter secondary-side rectification, and industrial DC/DC modules requiring stable component supply and halogen-free compliance.

Supply support for SI4634DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si4634DY product line targets high-current, low-voltage DC/DC conversion in portable computing and power adapter applications, prioritizing low R_DS(on), fast switching, and robust thermal packaging.

FAQ

What is the maximum continuous drain current for SI4634DY-T1-GE3 at 70 °C case temperature?

The SI4634DY-T1-GE3 supports 19.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and must be applied when designing for sustained high-power operation without active cooling.

Does SI4634DY-T1-GE3 have a built-in body diode, and what are its key parameters?

Yes, the SI4634DY-T1-GE3 integrates a parasitic body diode with V_SD = 0.75–1.1 V at I_S = 3 A and reverse recovery time t_rr = 30–60 ns at T_J = 25 °C. These characteristics enable effective synchronous rectification without external diodes in buck converters, reducing conduction loss and improving efficiency.

Is SI4634DY-T1-GE3 suitable for 4.5 V gate drive applications?

Yes, the SI4634DY-T1-GE3 is explicitly characterized for 4.5 V gate drive, with R_DS(on) = 0.0067 Ω at I_D = 10 A and V_GS = 4.5 V. Its gate threshold voltage range (1.4–2.6 V) ensures full enhancement using standard 5 V logic-level controllers, making it ideal for notebook and USB-C PD applications.

What is the thermal resistance from junction to foot (R_thJF) for SI4634DY-T1-GE3, and why does it matter?

The SI4634DY-T1-GE3 has a typical R_thJF of 18 °C/W (maximum 22 °C/W) under steady-state conditions. This parameter directly quantifies how effectively heat flows from the silicon die to the PCB copper via the exposed drain pad - critical for predicting junction temperature rise in compact layouts where case-to-ambient convection is limited.

How is halogen-free compliance implemented in SI4634DY-T1-GE3?

The SI4634DY-T1-GE3 meets IEC 61249-2-21 halogen-free requirements by eliminating brominated flame retardants and chlorine-based compounds from its molding compound and termination plating. This compliance supports environmental safety standards for consumer electronics without degrading electrical or thermal performance.

SI4634DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3150 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 5.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4634DY-T1-GE3 FAQ

1.How can I place an order for SI4634DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4634DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4634DY-T1-GE3 reliable?

The price and inventory of SI4634DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4634DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4634DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4634DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4634DY-T1-GE3?

SI4634DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4634DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4634DY-T1-GE3?

For technical support, including SI4634DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4634DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4634DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4634DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4634DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4634DY-T1-GE3?

All SI4634DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4634DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4634DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4634DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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