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Vishay Siliconix SI4636DY-T1-E3
- Part No.:
- SI4636DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4636DY-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 17A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,293
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Product details
Overview
SI4636DY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET with integrated Schottky diode in SO-8 package, delivering 17 A continuous drain current at TC = 25 °C, RDS(on) of 8.5 mΩ at VGS = 10 V, and 10.5 mΩ at VGS = 4.5 V - optimized for low-side switching in notebook DC/DC converters.
For engineers reviewing the SI4636DY-T1-E3 datasheet, SI4636DY-T1-E3 pinout, SI4636DY-T1-E3 application, or SI4636DY-T1-E3 equivalent, this device offers verified thermal performance (RthJF = 23 °C/W), 100 % UIS-tested ruggedness, and dual-diode functionality enabling efficient synchronous rectification and body-diode bypass in high-frequency buck stages.
Technical Context
This MOSFET integrates a co-packaged Schottky diode to reduce reverse recovery losses and improve efficiency in low-voltage, high-current DC/DC applications. Its trench-based silicon structure enables low gate charge (Qg = 18.8 nC at VGS = 4.5 V) and fast switching (tr = 12–20 ns at VGEN = 10 V).
The device operates with VGS(th) between 1.0 V and 2.5 V, supports ±16 V gate drive, and maintains stable RDS(on) over junction temperatures from –55 °C to 150 °C - critical for thermally constrained notebook power rails where thermal resistance to foot (RthJF = 23 °C/W) dominates heat removal.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage compatible with 3.3 V–12 V input rails in notebook point-of-load converters |
| RDS(on) | 8.5 mΩ @ VGS = 10 V - enables <1.7 W conduction loss at 15 A, reducing thermal load on compact PCBs |
| ID (Cont.) | 17 A @ TC = 25 °C - supports high-current CPU/GPU core rails without external heatsinking |
| Qg | 18.8 nC @ VGS = 4.5 V - minimizes gate drive power and enables efficient operation with standard PWM controllers |
| VSD | 0.4 V @ IS = 2 A - Schottky forward drop lowers freewheeling loss vs. standard body diode (typ. 0.8–1.2 V) |
| trr | 28–45 ns - ultra-fast body diode recovery prevents shoot-through and reduces EMI in synchronous buck topologies |
| RthJF | 23 °C/W - low junction-to-foot thermal resistance allows direct thermal coupling to copper pour or heatsink pad |
Pinout & Package
SO-8 surface-mount package with exposed drain paddle for enhanced thermal performance; pin 1–8 arranged as G-S-D-S-D-S-D-D (top view), where pins 1, 3, 5 are source terminals, pins 2, 4, 6, 8 are drain terminals, and pin 7 is gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3, 5 | Source | Common source node tied to ground reference; multiple parallel pins reduce source inductance and improve current sharing |
| 2, 4, 6, 8 | Drain | High-current output path connected to inductor and output capacitor; exposed drain paddle provides primary thermal path |
| 7 | Gate | Control input requiring ≤2.0 Ω gate resistance to ensure clean turn-on/turn-off and minimize ringing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables industry-leading RDS(on) × Qg figure of merit (≈160 mΩ·nC), improving efficiency in 500 kHz–1 MHz switching |
| Integrated Schottky diode | Reduces reverse recovery charge (Qrr = 19–30 nC) and eliminates minority-carrier storage delay in freewheeling path |
| 100 % UIS tested | Guarantees avalanche energy handling (EAS = 20 mJ) under unclamped inductive switching - critical for robustness in transient-loaded DC/DC |
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU without compromising thermal or electrical performance |
| Exposed drain paddle | Provides low-impedance thermal path (RthJF = 23 °C/W) and mechanical stability for high-power density layouts |
Applications
| Notebook Core Voltage Regulator | USB-C PD Power Path |
|---|---|
Use Scenario: High-efficiency 1–2 V, 15–20 A core supply for Intel Core i-series or AMD Ryzen processors in ultrabooks. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, operating at 500–1000 kHz with tight duty cycle control. Use Value: 8.5 mΩ RDS(on) and 0.4 V Schottky VSD reduce total conduction loss by ≥35 % versus discrete MOSFET + Schottky solutions. | Use Scenario: Secondary-side synchronous rectification in 20–100 W USB-C Power Delivery adapters supporting PPS and variable output. IC Role / Device Role / Timing Role: Output switch in isolated DC/DC stage, conducting during flyback/freewheeling phase with precise timing alignment to primary controller. Use Value: Fast trr (28 ns) and low Qrr prevent cross-conduction and enable >94 % peak efficiency at 20 V/5 A output. |
| Industrial 24 V DC/DC Converter | Embedded GPU Power Module |
Use Scenario: Compact 24 V input to 5 V/12 V intermediate bus converter in programmable logic controllers and edge AI modules. IC Role / Device Role / Timing Role: Low-side switch in non-isolated buck regulator, handling up to 12 A continuous with minimal derating at 70 °C ambient. Use Value: RthJF = 23 °C/W and 13.5 A rating at TC = 70 °C allow full current delivery without forced air cooling. | Use Scenario: Dedicated 0.8–1.2 V, 25 A power rail for NVIDIA Jetson Orin or AMD Alveo accelerator modules in compact edge servers. IC Role / Device Role / Timing Role: Phase-leg low-side FET in 3+1 phase VR13-compatible regulator, driven by dedicated IMVP-9/VR13 controller. Use Value: Dual-source/dual-drain layout minimizes loop inductance, suppressing voltage spikes during 100 A/µs dI/dt transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | 30 V, RDS(on) = 9.5 mΩ @ 10 V, Qg = 22 nC, SO-8 with Schottky, but higher RDS(on) and gate charge | Lower efficiency at high frequency due to higher Qg; suitable only where gate drive strength exceeds 2 A peak | Select when halogen-free compliance is mandatory and slight efficiency trade-off is acceptable |
| IRF7759L2TRPBF | 30 V, RDS(on) = 7.8 mΩ @ 10 V, no integrated Schottky, PQFN 5×6 mm package, higher thermal performance (RthJA = 35 °C/W) | Requires external Schottky for freewheeling; better for thermally aggressive environments but increases BOM count | Select when board space permits larger footprint and discrete diode integration is preferred for cost or reliability tuning |
Compared with SI4636DY-T1-E3, Si7850DP-T1-GE3 trades lower gate drive demand for reduced efficiency, while IRF7759L2TRPBF delivers lower RDS(on) but requires external diode placement and layout rework - making SI4636DY-T1-E3 optimal for space-constrained, high-efficiency notebook and USB-C PD designs where integrated Schottky simplifies design and improves reliability.
Availability
SI4636DY-T1-E3 is available at Aetrix Electronics and suitable for notebook logic DC/DC, USB-C PD power path, and industrial 24 V DC/DC converters requiring stable component supply, lead-free compliance, and long-term production continuity.
Supply support for SI4636DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial, computing, and automotive applications.
The Si4636DY product line targets high-efficiency, space-constrained DC/DC conversion in portable computing and USB power delivery systems, emphasizing low RDS(on), fast switching, and integrated Schottky functionality to eliminate external diode requirements.
FAQ
What is the maximum continuous drain current rating for SI4636DY-T1-E3 at 70 °C case temperature?
The SI4636DY-T1-E3 supports 13.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout and airflow conditions in the target application.
Does SI4636DY-T1-E3 include both a body diode and a Schottky diode?
Yes, SI4636DY-T1-E3 integrates a Schottky diode in parallel with the MOSFET's intrinsic body diode. The Schottky diode has VSD = 0.4 V at 2 A and dominates conduction during freewheeling, while the body diode remains present but exhibits faster trr (28–45 ns) than conventional MOSFETs due to process optimization.
Is SI4636DY-T1-E3 pin-compatible with other SO-8 N-channel MOSFETs?
No - SI4636DY-T1-E3 uses a proprietary multi-source/multi-drain SO-8 pinout (pins 1/3/5 = source, 2/4/6/8 = drain, pin 7 = gate), differing from standard SO-8 MOSFET layouts. PCB layout must follow the exact pin mapping shown in Figure 1 of Vishay document 74961 to avoid functional failure or thermal issues.
What is the typical gate threshold voltage range for SI4636DY-T1-E3?
The SI4636DY-T1-E3 has a gate-source threshold voltage VGS(th) ranging from 1.0 V to 2.5 V at TJ = 25 °C and ID = 250 µA. This ensures reliable turn-on with 3.3 V logic-level gate drivers while maintaining sufficient noise margin against false triggering in noisy power environments.
Can SI4636DY-T1-E3 be used in synchronous rectification without external diode replacement?
Yes - SI4636DY-T1-E3 is specifically designed for synchronous rectification in buck converters. Its integrated Schottky diode replaces the need for an external diode, and its low RDS(on) and fast switching parameters (td(on) = 12 ns, tf = 9 ns at VGEN = 10 V) enable efficient, self-commutated operation without additional components.
SI4636DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2635 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 4.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4636DY-T1-E3 FAQ
1.How can I place an order for SI4636DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4636DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4636DY-T1-E3 reliable?
The price and inventory of SI4636DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4636DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4636DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4636DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4636DY-T1-E3?
SI4636DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4636DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4636DY-T1-E3?
For technical support, including SI4636DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4636DY-T1-E3 requirements.
6.How does Aetrix verify that SI4636DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4636DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4636DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4636DY-T1-E3?
All SI4636DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4636DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4636DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4636DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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