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Vishay Siliconix SI4636DY-T1-GE3
- Part No.:
- SI4636DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4636DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 17A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,599
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Product details
Overview
SI4636DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET with integrated Schottky diode in SO-8 package, delivering 17 A continuous drain current at TC = 25 °C, 0.0085 Ω RDS(on) at VGS = 10 V, and 18.8 nC total gate charge - optimized for low-side switching in notebook DC/DC converters.
For engineers reviewing the SI4636DY-T1-GE3 datasheet, SI4636DY-T1-GE3 pinout, SI4636DY-T1-GE3 application, or SI4636DY-T1-GE3 equivalent, key selection criteria include its halogen-free and lead-free compliance, junction-to-foot thermal resistance of 23 °C/W (steady state), and validated UIS and Rg testing per Vishay specification 74961.
Technical Context
This device integrates a low-RDS(on) N-channel MOSFET and a co-packaged Schottky diode to enable synchronous rectification and body-diode replacement in high-efficiency buck converters. Its trench-based silicon structure supports fast switching with 12 ns turn-on delay (VGEN = 10 V) and 9 ns fall time.
The SO-8 footprint provides dual-source/drain terminals (pins 1–2, 3–4, 5–6, 7–8) for parallel conduction paths and reduced PCB trace inductance. Thermal performance is characterized by junction-to-ambient RthJA = 40 °C/W (t ≤ 10 s) and junction-to-foot RthJF = 23 °C/W (steady state).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage compatible with 24-V input rails and transient margin in notebook power stages |
| RDS(on) | 0.0085 Ω at VGS = 10 V - enables <17 W conduction loss at 17 A, critical for thermally constrained laptop PCBs |
| ID (Cont.) | 17 A at TC = 25 °C - supports high-current low-side switch operation without external heatsink |
| Qg | 18.8 nC at VGS = 4.5 V - balances drive strength and switching loss for 300–500 kHz DC/DC operation |
| VSD | 0.4 V at IS = 2 A - Schottky forward drop reduces reverse-recovery losses versus standard body diode |
| trr | 28 ns typical - minimizes dead-time loss and EMI in synchronous buck topologies |
| RthJF | 23 °C/W steady state - allows direct thermal coupling to copper pour or heat-spreading plane under drain pads |
Pinout & Package
SO-8 surface-mount package with exposed drain paddle (pins 1–2, 3–4, 5–6, 7–8 all connected to drain; pin 8 is primary drain terminal). Dual-source configuration (pins 1, 3, 5) and dual-gate (pin 2) support low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3, 5 | Source | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-dI/dt switching |
| 2 | Gate | Single gate input with 1.3–2.0 Ω internal gate resistance - simplifies gate driver design and dV/dt control |
| 4, 6, 7, 8 | Drain | Four drain connections including exposed thermal pad (pin 8) - enables >2 W dissipation via PCB copper area |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.0085 Ω RDS(on) at 10 V in SO-8 - achieves higher current density than planar MOSFETs of same footprint |
| Integrated Schottky diode | 0.4 V forward drop at 2 A replaces lossy body diode - eliminates reverse recovery charge (Qrr = 19 nC) in freewheeling phase |
| 100 % Rg and UIS tested | Ensures gate robustness against overvoltage transients and avalanche energy handling up to 20 mJ - critical for unregulated input conditions |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS - meets OEM environmental requirements for portable computing platforms |
Applications
| Notebook CPU Core VRM | Ultrabook DDR Memory Regulator |
|---|---|
Use Scenario: High-frequency synchronous buck converter supplying 1.0–1.3 V to Intel/AMD CPU cores with 30–60 A peak load. IC Role / Device Role / Timing Role: Low-side power switch with integrated Schottky diode replacing discrete body diode path. Use Value: 0.0085 Ω RDS(on) and 28 ns trr reduce conduction + switching losses by ~18 % vs. legacy SO-8 MOSFETs, extending battery runtime. | Use Scenario: Compact 3.3 V → 1.2 V point-of-load regulator on memory module PCB with strict height and thermal limits. IC Role / Device Role / Timing Role: Low-side FET in 500 kHz fixed-frequency buck stage driving LPDDR4/5 memory rails. Use Value: Dual-source/drain layout and 23 °C/W RthJF allow full 15.6 A rating at TC = 70 °C without thermal derating on 1" × 1" FR4. |
| Thin-and-Light Laptop GPU Rail | Convertible Tablet SoC Power Stage |
Use Scenario: Dynamic voltage scaling rail for discrete or integrated GPU, requiring fast transient response and low quiescent loss. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter with active current balancing. Use Value: 18.8 nC Qg at 4.5 V enables clean gate drive with 1-Ω driver, minimizing shoot-through risk during 100 ns dead time. | Use Scenario: Dual-rail power delivery (1.8 V I/O + 0.8 V core) in fanless tablet SoC designs where board space and thermal mass are minimal. IC Role / Device Role / Timing Role: Low-side switch in both rails using identical SI4636DY-T1-GE3 footprint for BOM consolidation. Use Value: SO-8 package with exposed drain supports shared thermal pad across both rails - reduces layer count and improves yield. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET with Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | 30 V, 0.0055 Ω RDS(on) at 10 V, 32 nC Qg, SO-8 with Schottky - lower RDS(on) but higher gate charge | Better conduction loss at high DC load; less suitable for >400 kHz due to higher Qg-induced switching loss | Select when thermal budget dominates over switching frequency constraints |
| IRF7759L2TRPBF | 30 V, 0.0067 Ω RDS(on) at 10 V, 22 nC Qg, SO-8 - no integrated Schottky; requires external diode or synchronous control | Requires controller with precise dead-time management; lacks VSD = 0.4 V advantage for light-load efficiency | Select only if existing design uses discrete Schottky or controller supports body-diode conduction |
Compared with Si7850DP-T1-GE3 and IRF7759L2TRPBF, the SI4636DY-T1-GE3 offers optimal trade-off between RDS(on), Qg, and integrated Schottky - enabling simpler layout, lower EMI, and higher light-load efficiency in space-constrained notebook VRMs without increasing gate drive complexity.
Availability
SI4636DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook logic DC/DC, ultrabook memory regulation, and thin-and-light GPU power delivery requiring stable component supply and halogen-free compliance.
Supply support for SI4636DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and thermal performance.
The Si4636DY product line targets high-efficiency, space-constrained DC/DC conversion in portable computing - designed specifically to replace discrete MOSFET + Schottky combinations with single-SO-8 integration while maintaining ruggedness and manufacturability.
FAQ
What is the maximum continuous drain current rating for SI4636DY-T1-GE3 at 70 °C case temperature?
The SI4636DY-T1-GE3 supports 13.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating from the 17 A value at TC = 25 °C and assumes proper PCB copper area for heat spreading. The device's 23 °C/W junction-to-foot thermal resistance enables this performance without additional heatsinking.
Does SI4636DY-T1-GE3 include a Schottky diode, and what is its forward voltage?
Yes, the SI4636DY-T1-GE3 integrates a Schottky diode co-packaged with the MOSFET. Its forward voltage is 0.4 V at IS = 2 A and TJ = 25 °C, as confirmed in the Schottky and Body Diode Product Summary section. This low VSD replaces the lossier intrinsic body diode and eliminates reverse recovery charge in freewheeling operation.
What is the gate threshold voltage range for SI4636DY-T1-GE3, and how does it affect 4.5 V logic-level drive?
The SI4636DY-T1-GE3 has a gate threshold voltage VGS(th) of 1.0 V minimum to 2.5 V maximum at ID = 250 µA. At VGS = 4.5 V, it delivers 0.0105 Ω RDS(on) with 15.6 A current capability - confirming full enhancement well within logic-level drive range. This ensures reliable turn-on with standard 3.3 V or 5 V gate drivers.
How is the SO-8 package of SI4636DY-T1-GE3 configured for thermal management?
The SI4636DY-T1-GE3 uses a standard SO-8 outline with pins 1–2, 3–4, 5–6, and 7–8 all electrically connected to the drain, forming an exposed thermal pad on the bottom side. This configuration achieves a steady-state junction-to-foot thermal resistance of 23 °C/W, allowing efficient heat transfer to PCB copper pours - critical for sustained 15+ A operation in compact laptop power stages.
Is SI4636DY-T1-GE3 suitable for synchronous rectification in buck converters, and why?
Yes, the SI4636DY-T1-GE3 is explicitly designed for synchronous rectification in buck converters. Its integrated Schottky diode (VSD = 0.4 V), low Qg (18.8 nC at 4.5 V), and fast switching (9 ns fall time) minimize conduction and switching losses. Vishay's application note confirms use in "Notebook Logic DC/DC – Low Side", validating its role as a synchronous rectifier replacement for discrete diodes or body-diode conduction.
SI4636DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2635 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 4.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4636DY-T1-GE3 FAQ
1.How can I place an order for SI4636DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4636DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4636DY-T1-GE3 reliable?
The price and inventory of SI4636DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4636DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4636DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4636DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4636DY-T1-GE3?
SI4636DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4636DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4636DY-T1-GE3?
For technical support, including SI4636DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4636DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4636DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4636DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4636DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4636DY-T1-GE3?
All SI4636DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4636DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4636DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4636DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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