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Vishay Siliconix SI4646DY-T1-E3
- Part No.:
- SI4646DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4646DY-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 12A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,397
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Product details
Overview
SI4646DY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® MOSFET with integrated Schottky diode in SO-8 package, featuring RDS(on) = 0.0115 Ω at VGS = 10 V, 12 A continuous drain current (package-limited), and 13.7 nC total gate charge - optimized for synchronous rectification in notebook PC power stages.
For engineers reviewing the SI4646DY-T1-E3 datasheet, SI4646DY-T1-E3 pinout, SI4646DY-T1-E3 application, or SI4646DY-T1-E3 equivalent, key selection criteria include its monolithic SkyFET® integration, low Qg/RDS(on) ratio, Schottky body diode performance (VSD = 0.53 V at IS = 2 A), and SO-8 thermal footprint suitability for high-density DC/DC converters.
Technical Context
This device integrates a trench-gate N-channel MOSFET and a co-packaged Schottky diode in a single SO-8 leadframe, enabling self-synchronous rectification without external diode replacement. Its gate threshold voltage (1.2–2.5 V) supports 4.5 V logic-level drive, while RDS(on) remains stable across -55 °C to 150 °C junction range.
The monolithic construction eliminates parasitic inductance between MOSFET and diode, reducing reverse recovery losses. Dynamic parameters - including Ciss = 1790 pF, Qgd = 4 nC, and tr = 10 ns (VGEN = 10 V) - are specified under standardized 15 V VDS, 10 A ID conditions per JEDEC JESD24-11.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and 5 V output buck converters |
| RDS(on) | 0.0115 Ω @ VGS = 10 V - Enables <1.2 W conduction loss at 10 A, critical for thermally constrained notebook PCBs |
| ID (continuous) | 12 A (TC = 25 °C) - Package-limited rating defining maximum steady-state current before thermal derating |
| Qg | 13.7 nC @ VGS = 4.5 V - Low gate charge reduces driver power loss and enables efficient 500 kHz+ switching |
| VSD | 0.53–0.7 V @ IS = 2 A - Schottky forward drop minimizes reverse conduction loss during dead-time |
| trr | 17–30 ns - Fast body diode recovery prevents shoot-through and reduces EMI in synchronous topologies |
| RthJA | 33–42 °C/W - Thermal resistance defines ambient-to-junction rise under standard FR4 mounting |
Pinout & Package
SO-8 narrow-body package (JEDEC MS-012), 5.0 mm × 4.0 mm × 1.75 mm height, with exposed drain paddle for enhanced thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires 1.2–2.5 V threshold activation; low Rg (0.3–2.4 Ω) enables fast edge rates |
| 2 | Source | Reference node for gate drive and current return path; tied to power ground in synchronous buck low-side switch |
| 3 | Drain | Main current path output; electrically connected to exposed paddle for thermal and current conduction |
| 4 | Source | Second source connection - paralleled internally with Pin 2 to reduce source inductance |
| 5 | Drain | Second drain connection - paralleled internally with Pin 3 and exposed paddle |
| 6 | Drain | Third drain connection - paralleled internally with Pins 3 and 5 |
| 7 | Gate | Second gate connection - paralleled internally with Pin 1 to minimize gate loop inductance |
| 8 | Drain | Fourth drain connection - paralleled internally with Pins 3, 5, and 6 |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® Monolithic Integration | Co-packaged TrenchFET MOSFET + Schottky diode eliminates interconnect inductance and simplifies layout for synchronous rectifiers |
| 100 % Rg and UIS Tested | Every unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures reliability in hard-switched converters |
| Halogen-free & RoHS Compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - suitable for consumer electronics with strict material compliance requirements |
| Low Qgd/Qg Ratio | 4 nC / 13.7 nC ≈ 0.29 - improves Miller immunity and enables stable operation with moderate gate resistors in high-dV/dt environments |
Applications
| Notebook PC System Power | Buck Converter |
|---|---|
Use Scenario: Primary 5 V or 3.3 V VRM output stage in ultraportable notebooks with tight thermal envelopes. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing discrete Schottky diode to improve efficiency by 2–4 % at 10–15 A loads. Use Value: RDS(on) = 0.0115 Ω and VSD = 0.53 V reduce conduction loss versus standard diodes, extending battery runtime. | Use Scenario: High-frequency (300–1000 kHz) step-down regulator for FPGA core voltage in industrial control modules. IC Role / Device Role / Timing Role: Power switch in non-isolated buck topology where fast turn-on (td(on) = 11 ns) and low Qg minimize switching loss. Use Value: 13.7 nC Qg at 4.5 V allows use of low-power gate drivers, reducing system BOM cost and board area. |
| Synchronous Rectifier Switch | DC/DC Power Module |
Use Scenario: Secondary-side rectification in isolated 12 V → 5 V flyback or forward converters for PoE-powered devices. IC Role / Device Role / Timing Role: Self-driven synchronous rectifier leveraging transformer reset voltage to gate-drive SI4646DY-T1-E3 without auxiliary bias winding. Use Value: Integrated Schottky diode provides reliable turn-on during dead-time, preventing reverse current and improving light-load regulation. | Use Scenario: Internal power switch in compact, shielded 12 V input DC/DC modules targeting space-constrained IoT gateways. IC Role / Device Role / Timing Role: High-current (10 A) power FET with SO-8 footprint enabling module designers to meet IPC-7351B pad recommendations without custom layout. Use Value: Exposed drain paddle and RthJF = 16 °C/W allow >4 W dissipation on 2 oz copper, supporting high power density without heatsinks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7842DP-T1-GE3 | 30 V, RDS(on) = 0.0095 Ω @ 10 V, but no integrated Schottky diode; requires external diode for synchronous rectification | Higher efficiency possible with optimized external diode, but increases component count and layout complexity | Select when discrete diode optimization is prioritized over integration simplicity |
| IRF7478PBF | 30 V, RDS(on) = 0.012 Ω @ 10 V, SO-8, but uses standard body diode (trr = 45 ns) - no Schottky enhancement | Lower cost, but higher reverse recovery loss limits usable frequency to ≤300 kHz in synchronous designs | Select for cost-sensitive, lower-frequency buck converters where Schottky benefits are not required |
Compared with Si7842DP-T1-GE3 and IRF7478PBF, the SI4646DY-T1-E3 uniquely combines monolithic Schottky integration, sub-14 nC gate charge at 4.5 V, and validated UIS robustness - making it optimal for compact, high-efficiency synchronous rectifiers where layout simplicity and thermal performance are critical.
Availability
SI4646DY-T1-E3 is available at Aetrix Electronics and suitable for notebook PC system power, buck converter design, synchronous rectifier switch implementation, and DC/DC power module development requiring stable component supply and full traceability.
Supply support for SI4646DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SI4646DY-T1-E3 belongs to Vishay's SkyFET® family - engineered specifically for high-frequency, high-efficiency DC/DC conversion in portable and space-constrained power systems.
FAQ
What is the maximum continuous drain current rating for SI4646DY-T1-E3 at 70 °C case temperature?
The SI4646DY-T1-E3 has a continuous drain current rating of 12 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value is package-limited and applies under steady-state thermal conditions with proper PCB copper area per Vishay's recommended SO-8 pad layout. Derating begins above 70 °C case temperature per the published current derating curve.
Does SI4646DY-T1-E3 include a Schottky diode, and how is it connected internally?
Yes, the SI4646DY-T1-E3 integrates a Schottky diode monolithically with the N-channel MOSFET. The diode is connected anode-to-source and cathode-to-drain - matching the intrinsic body diode orientation but with significantly lower forward voltage (VSD = 0.53 V at 2 A) and faster recovery (trr = 17–30 ns). This configuration enables true synchronous rectification without external components.
What is the gate threshold voltage range for SI4646DY-T1-E3, and is it suitable for 3.3 V logic-level drive?
The SI4646DY-T1-E3 has a gate threshold voltage range of 1.2 V to 2.5 V (VGS(th)), making it fully compatible with 3.3 V logic-level gate drive. At VGS = 4.5 V, it delivers RDS(on) = 0.0145 Ω - confirming strong enhancement-mode operation well within typical 3.3 V microcontroller or PWM controller output capability.
How does the thermal performance of SI4646DY-T1-E3 compare between junction-to-foot and junction-to-ambient metrics?
The SI4646DY-T1-E3 specifies RthJF = 16 °C/W (steady-state) and RthJA = 33–42 °C/W (t ≤ 10 s). The lower junction-to-foot resistance confirms efficient heat transfer from die to exposed drain paddle, while the higher junction-to-ambient reflects dependence on PCB copper area. For high-power operation, thermal design must prioritize soldering the drain paddle to ≥1 in² of 2 oz copper per Vishay's application note guidelines.
Is SI4646DY-T1-E3 rated for unclamped inductive switching (UIS), and what testing standard applies?
Yes, the SI4646DY-T1-E3 undergoes 100 % UIS testing per JEDEC JESD24-11. Each unit is validated for energy handling up to EAS = 20 mJ (single-pulse avalanche) and peak current IAS = 20 A, ensuring robustness against inductive transients in real-world buck and flyback converter applications without external snubbers.
SI4646DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1790 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4646DY-T1-E3 FAQ
1.How can I place an order for SI4646DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4646DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4646DY-T1-E3 reliable?
The price and inventory of SI4646DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4646DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4646DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4646DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4646DY-T1-E3?
SI4646DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4646DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4646DY-T1-E3?
For technical support, including SI4646DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4646DY-T1-E3 requirements.
6.How does Aetrix verify that SI4646DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4646DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4646DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4646DY-T1-E3?
All SI4646DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4646DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4646DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4646DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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