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Vishay Siliconix SI4646DY-T1-GE3
- Part No.:
- SI4646DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4646DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 12A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,106
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Product details
Overview
SI4646DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® MOSFET with integrated Schottky diode in SO-8 package, featuring RDS(on) = 0.0115 Ω at VGS = 10 V, 12 A continuous drain current (package-limited), and 13.7 nC total gate charge - optimized for synchronous rectification in notebook PC buck converters.
For engineers reviewing the SI4646DY-T1-GE3 datasheet, SI4646DY-T1-GE3 pinout, SI4646DY-T1-GE3 application, or SI4646DY-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET® integration of MOSFET + Schottky, halogen-free compliance, thermal resistance RthJF = 16 °C/W (steady-state), and validated UIS robustness.
Technical Context
This device integrates a trench-gate N-channel power MOSFET and a co-packaged Schottky diode in a single SO-8 footprint, enabling synchronous rectifier operation without external diode placement. Its gate threshold voltage (VGS(th) = 1.2–2.5 V) supports 4.5 V logic-level drive, while low Qg (13.7 nC @ 4.5 V) enables high-frequency switching up to 1 MHz in DC/DC converters.
The monolithic construction ensures matched thermal behavior between MOSFET channel and Schottky junction, critical for body-diode replacement in buck topologies. Specified avalanche energy EAS = 20 mJ and 100 % UIS testing confirm ruggedness under transient overloads typical in portable power systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 5 V–12 V input rails in notebook system power stages |
| RDS(on) | 0.0115 Ω @ VGS = 10 V - Enables <120 mW conduction loss at 10 A, reducing thermal load in compact layouts |
| ID (cont) | 12 A (TC = 25 °C, package-limited) - Supports high-current output stages without paralleling devices |
| Qg | 13.7 nC @ VGS = 4.5 V - Low gate charge minimizes driver power and enables efficient 500 kHz–1 MHz operation |
| VSD | 0.53–0.7 V @ IS = 2 A - Schottky forward drop lower than silicon body diode, cutting reverse-recovery losses |
| trr | 17–30 ns - Fast recovery reduces switching loss and EMI in synchronous rectifier mode |
| RthJF | 16 °C/W (steady-state) - Low junction-to-foot thermal resistance allows direct PCB copper heatsinking via drain pads |
Pinout & Package
SO-8 (JEDEC MS-012) surface-mount package with exposed drain paddle for thermal enhancement; pin 1–8 arranged as G-S-D-S-D-S-D-G in top view, where pins 1, 3, 5, 7 are source terminals, pins 2, 4, 6, 8 are drain terminals, and pin 1 is gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal for MOSFET channel; requires ≤20 V gate drive; low Ciss (1790 pF) eases driver design |
| 2, 4, 6, 8 (D) | Drain | High-side switch node connection; all four pins internally tied to exposed paddle for low-inductance, high-current path |
| 1, 3, 5, 7 (S) | Source | Power ground reference for MOSFET and Schottky cathode; multiple pins reduce bond-wire inductance and IR drop |
| Drain Paddle | Thermal & Electrical Drain Node | Exposed copper pad soldered to PCB ground plane; primary thermal path (RthJF = 16 °C/W) and current return path |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® Monolithic Integration | Single-die MOSFET + Schottky eliminates interconnect parasitics and mismatch, enabling true synchronous rectifier replacement of discrete diodes |
| Halogen-Free Construction | Complies with IEC 61249-2-21 and RoHS Directive 2002/95/EC - required for green electronics certification in consumer notebooks |
| 100 % UIS Tested | Each unit validated for unclamped inductive switching robustness (EAS = 20 mJ), ensuring reliability in buck converter freewheeling transients |
| Low RDS(on) at 4.5 V | 0.0145 Ω @ VGS = 4.5 V - enables full-rated current with standard logic-level PWM controllers, no level-shifting needed |
| Exposed Drain Paddle | Thermally enhanced SO-8 footprint delivers 2× power dissipation vs. standard SO-8 - supports 3.0 W at TA = 25 °C without heatsink |
Applications
| Notebook PC System Power | Buck Converter Primary Switch |
|---|---|
Use Scenario: High-efficiency 5 V or 12 V system rail generation in ultraportable notebooks with tight thermal constraints. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode in secondary side of multiphase buck converter. Use Value: Reduces conduction loss by >40 % vs. discrete 30 V Schottky, lowering case temperature by up to 15 °C at 10 A load. | Use Scenario: Main high-side switch in 1–2 MHz notebook CPU core VRM with 3.3 V–12 V input. IC Role / Device Role / Timing Role: N-channel power switch driven by dedicated gate driver IC with 4.5 V logic-compatible input. Use Value: Low Qg (13.7 nC) and fast switching (tf = 8–16 ns) minimize dead-time losses and improve light-load efficiency. |
| Synchronous Rectifier Switch | Portable SSD Power Management |
Use Scenario: Secondary-side switch in isolated DC/DC for NVMe SSD power rails (3.3 V, 1.8 V). IC Role / Device Role / Timing Role: Low-VDS synchronous rectifier replacing body diode conduction during freewheeling phase. Use Value: VSD = 0.53 V cuts reverse recovery charge Qrr to 5.5–10 nC, eliminating diode ringing and reducing EMI filtering requirements. | Use Scenario: Load switch and power-path controller for 3.3 V VCC supply in M.2 form-factor SSDs. IC Role / Device Role / Timing Role: High-current, low-RDS(on) pass element enabling hot-swap and inrush control. Use Value: 12 A rating and 0.0115 Ω RDS(on) support 3.3 V/8 A SSD rails with <350 mW loss, avoiding thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | 30 V, RDS(on) = 0.0095 Ω @ 10 V, but no integrated Schottky; SO-8 with dual-drain configuration | Requires external Schottky for synchronous rectification; better suited for high-efficiency high-side switching only | Select when Schottky integration is unnecessary and lowest possible RDS(on) is prioritized over diode replacement capability |
| IRF7759L2TRPBF | 30 V, RDS(on) = 0.0075 Ω @ 10 V, integrated Schottky, but PQFN 5×6 mm package (not SO-8) | Higher current density but incompatible footprint; requires PCB redesign and new thermal layout | Select when board space is constrained and thermal performance outweighs SO-8 compatibility |
Compared with Si7157DP-T1-GE3 and IRF7759L2TRPBF, SI4646DY-T1-GE3 uniquely combines SO-8 compatibility, monolithic Schottky integration, and halogen-free compliance - making it the only drop-in solution for legacy notebook designs upgrading to green manufacturing without layout change.
Availability
SI4646DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC system power, buck converter primary switching, synchronous rectifier switch, and portable SSD power management requiring stable component supply and halogen-free compliance.
Supply support for SI4646DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SkyFET® product line delivers monolithically integrated MOSFET + Schottky devices targeting high-frequency DC/DC conversion in space-constrained portable electronics where thermal management and green compliance are critical.
FAQ
What is the maximum continuous drain current rating for SI4646DY-T1-GE3 at 70 °C case temperature?
The SI4646DY-T1-GE3 supports 12 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (TJ = 150 °C)" with footnote "e. Package limited." This rating reflects thermal limits imposed by the SO-8 package, not silicon capability.
Does SI4646DY-T1-GE3 include a body diode, and how does it differ from the integrated Schottky diode?
Yes, SI4646DY-T1-GE3 has both a parasitic body diode (inherent to MOSFET structure) and a co-packaged Schottky diode. The Schottky diode (VSD = 0.53–0.7 V, trr = 17–30 ns) is intentionally integrated to replace the slower, higher-loss body diode during freewheeling - a key feature enabling synchronous rectification without external components.
Can SI4646DY-T1-GE3 be driven directly by a 3.3 V microcontroller GPIO without a gate driver?
No - while SI4646DY-T1-GE3 specifies RDS(on) down to 0.0145 Ω at VGS = 4.5 V, its gate threshold voltage range is 1.2–2.5 V, and full enhancement requires ≥4.5 V. A 3.3 V GPIO cannot reliably achieve low RDS(on); use a level-shifting gate driver or 5 V logic-compatible controller for optimal performance of SI4646DY-T1-GE3.
What is the thermal resistance from junction to foot (RthJF) for SI4646DY-T1-GE3, and why does it matter?
The SI4646DY-T1-GE3 has RthJF = 16 °C/W (typical, steady-state), measured from junction to the exposed drain paddle. This parameter matters because it defines the dominant thermal path when the drain paddle is soldered to a large PCB copper area - enabling higher power dissipation than junction-to-ambient ratings suggest, especially in compact notebook PCBs with limited airflow.
Is SI4646DY-T1-GE3 suitable for automotive applications per AEC-Q101?
No - SI4646DY-T1-GE3 is not AEC-Q101 qualified. It is rated for –55 °C to +150 °C operating junction temperature and designed for commercial/industrial portable electronics (e.g., notebook PCs). For automotive use, Vishay offers AEC-Q101-qualified variants such as SQJQ464E-T1_GE3, not SI4646DY-T1-GE3.
SI4646DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1790 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4646DY-T1-GE3 FAQ
1.How can I place an order for SI4646DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4646DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4646DY-T1-GE3 reliable?
The price and inventory of SI4646DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4646DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4646DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4646DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4646DY-T1-GE3?
SI4646DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4646DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4646DY-T1-GE3?
For technical support, including SI4646DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4646DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4646DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4646DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4646DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4646DY-T1-GE3?
All SI4646DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4646DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4646DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4646DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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