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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4654DY-T1-E3

Name: SI4654DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4654DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4654DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4654DY-T1-E3.pdf

Description:: MOSFET N-CH 25V 28.6A 8SO

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Product details

Overview

SI4654DY-T1-E3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Power MOSFET in SO-8 package, delivering R_DS(on) = 4.0 mΩ at V_GS = 10 V and 5.2 mΩ at V_GS = 4.5 V, with 28.6 A continuous drain current (T_C = 25 °C), optimized for low-side synchronous buck and POL synchronous rectifier applications in notebooks and game consoles.

For engineers reviewing the SI4654DY-T1-E3 datasheet, SI4654DY-T1-E3 pinout, SI4654DY-T1-E3 application, or SI4654DY-T1-E3 equivalent, key selection criteria include its 25-V V_DS, 29 nC total gate charge at 4.5 V drive, 100% UIS-tested ruggedness, SO-8 thermal performance (R_thJA = 50 °C/W max), and halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g/Q_gd ratio (29 nC / 7.2 nC typical at 4.5 V), supporting high-efficiency DC-DC conversion in compact layouts. Its body diode exhibits t_rr = 32–60 ns and Q_rr = 26–55 nC, enabling reliable synchronous rectification without external Schottky supplementation.

The device operates across –55 °C to +150 °C junction temperature range, with absolute maximum V_GS = ±16 V and avalanche energy rating E_AS = 45 mJ, making it suitable for transient-heavy POL rails where robustness against inductive switching stress is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for low-voltage DC-DC stages (e.g., CPU core rails).
R_DS(on)	4.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 20 A, critical for thermally constrained notebook PCBs.
Q_g	29 nC @ V_GS = 4.5 V - Matches common 5-V gate drivers; enables efficient 1–2 MHz switching with low driver power.
I_D (continuous)	28.6 A @ T_C = 25 °C - Supports high-current POL outputs when mounted on 1" × 1" FR4 with copper pour.
E_AS	45 mJ - Withstands single-pulse inductive energy from 30 A/0.1 mH circuits without failure.
R_thJA	50 °C/W max - Defines worst-case thermal rise from junction to ambient on standard 2-layer board; guides heatsinking decisions.

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad (pins 1–4: S, 5–8: D, pin 3: G); thermal resistance R_thJF = 21 °C/W max (junction-to-foot) enables direct heat transfer to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4	Source	Common source connection for low-side switch; ties directly to power ground plane for minimal loop inductance.
3	Gate	Control input requiring <29 nC charge; layout must minimize trace inductance to suppress ringing during 10–24 ns turn-on delay.
5, 6, 7, 8	Drain	High-current output node; pins are internally paralleled to handle >25 A; connects to PCB drain copper for thermal and current capacity.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 4.0 mΩ R_DS(on) in SO-8 - achieves performance previously requiring larger packages like PowerPAK® SO-8.
100 % UIS tested	Guarantees avalanche ruggedness per JEDEC JESD22-A115 - eliminates need for derating in buck converter low-side position.
Halogen-free construction	Complies with IEC 61249-2-21 - satisfies RoHS+halogen-free requirements for consumer electronics OEMs without sacrificing thermal performance.
Low Q_gd/Q_g ratio	7.2 nC / 29 nC = 0.25 - improves Miller immunity and reduces risk of shoot-through in synchronous controllers with tight dead-time control.

Applications

Notebook CPU Core VRM	Game Console GPU Power Stage
Use Scenario: High-current, high-frequency (1–2 MHz) synchronous buck converter supplying 0.8–1.3 V to mobile CPU cores under dynamic load. IC Role / Device Role / Timing Role: Low-side power switch handling up to 30 A peak current; commutates with upper FET at precise dead time to minimize body diode conduction. Use Value: 4.0 mΩ R_DS(on) limits I²R loss to <2.4 W at 25 A, reducing local PCB heating and enabling thinner thermal vias.	Use Scenario: Point-of-load regulator for GPU memory interface (GDDR6), requiring fast transient response and low noise. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stage; body diode recovery (t_rr = 32 ns) minimizes reverse recovery loss during phase interleaving. Use Value: 29 nC Q_g allows clean 5-V gate drive with minimal overshoot, preserving signal integrity on dense GPU power delivery networks.
USB-C PD Fast Charging Module	Industrial FPGA Core Supply
Use Scenario: Secondary-side synchronous rectifier in isolated flyback or active clamp forward converter for 20–100 W USB-C PD adapters. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode; driven by transformer-coupled or IC-based gate driver synchronized to primary switch. Use Value: 45 mJ E_AS withstands reflected output inductance spikes during short-circuit events, improving adapter reliability certification pass rate.	Use Scenario: Core voltage regulator for Xilinx Kintex or Intel Stratix FPGAs operating at 0.75–0.95 V, 15–25 A, with strict ripple and thermal constraints. IC Role / Device Role / Timing Role: Low-side MOSFET in 3-phase interleaved buck; SO-8 footprint supports dense layout while R_thJF = 21 °C/W enables direct thermal coupling to internal ground plane. Use Value: 100 % R_g testing ensures gate resistance ≤1.8 Ω - guarantees consistent turn-on timing across production lots for deterministic phase alignment.

Notebook CPU Core VRM

Game Console GPU Power Stage

Use Scenario: High-current, high-frequency (1–2 MHz) synchronous buck converter supplying 0.8–1.3 V to mobile CPU cores under dynamic load.

IC Role / Device Role / Timing Role: Low-side power switch handling up to 30 A peak current; commutates with upper FET at precise dead time to minimize body diode conduction.

Use Value: 4.0 mΩ R_DS(on) limits I²R loss to <2.4 W at 25 A, reducing local PCB heating and enabling thinner thermal vias.

Use Scenario: Point-of-load regulator for GPU memory interface (GDDR6), requiring fast transient response and low noise.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stage; body diode recovery (t_rr = 32 ns) minimizes reverse recovery loss during phase interleaving.

Use Value: 29 nC Q_g allows clean 5-V gate drive with minimal overshoot, preserving signal integrity on dense GPU power delivery networks.

USB-C PD Fast Charging Module

Industrial FPGA Core Supply

Use Scenario: Secondary-side synchronous rectifier in isolated flyback or active clamp forward converter for 20–100 W USB-C PD adapters.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode; driven by transformer-coupled or IC-based gate driver synchronized to primary switch.

Use Value: 45 mJ E_AS withstands reflected output inductance spikes during short-circuit events, improving adapter reliability certification pass rate.

Use Scenario: Core voltage regulator for Xilinx Kintex or Intel Stratix FPGAs operating at 0.75–0.95 V, 15–25 A, with strict ripple and thermal constraints.

IC Role / Device Role / Timing Role: Low-side MOSFET in 3-phase interleaved buck; SO-8 footprint supports dense layout while R_thJF = 21 °C/W enables direct thermal coupling to internal ground plane.

Use Value: 100 % R_g testing ensures gate resistance ≤1.8 Ω - guarantees consistent turn-on timing across production lots for deterministic phase alignment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25-V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 32 nC; same SO-8 package but higher R_thJA (62 °C/W max).	Marginally higher conduction loss and lower thermal efficiency in high-power-density designs.	Acceptable for lower-current (<18 A) or less thermally constrained applications where Vishay's 4.0 mΩ advantage is not required.
NTMFS4C08NT1G	R_DS(on) = 3.8 mΩ @ 10 V; Q_g = 30 nC; PowerSO-8 package with enhanced thermal pad (R_thJA = 40 °C/W typ).	Better thermal performance but requires modified PCB land pattern and stencil design due to different thermal pad geometry.	Preferred for new designs targeting <1.5 W loss at 25 A, provided layout revision is feasible for the larger thermal pad.

Compared with IRF7470PBF and NTMFS4C08NT1G, SI4654DY-T1-E3 offers the lowest R_DS(on) in standard SO-8 while maintaining full 100 % UIS and R_g test coverage - ideal for cost-sensitive, high-volume notebook and console platforms where pin compatibility and qualification history matter.

Availability

SI4654DY-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, game console GPU power stages, and USB-C PD fast charging modules requiring stable component supply, long-term lifecycle support, and lead-free/halogen-free compliance.

Supply support for SI4654DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and consumer markets.

The Si4654DY belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-efficiency, high-current DC-DC conversion in space-constrained portable electronics where low R_DS(on), fast switching, and ruggedness are non-negotiable.

FAQ

What is the maximum continuous drain current for SI4654DY-T1-E3 at 70 °C case temperature?

The maximum continuous drain current for SI4654DY-T1-E3 is 23 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied in thermal design calculations for sustained operation. SI4654DY-T1-E3 maintains this rating while retaining its 4.0 mΩ R_DS(on) at 10 V gate drive.

Does SI4654DY-T1-E3 support 4.5 V gate drive in synchronous buck applications?

Yes, SI4654DY-T1-E3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 5.2 mΩ and Q_g = 29 nC typical at that voltage. This makes it compatible with standard 5-V PWM controllers and gate drivers used in notebook and gaming console VRMs. SI4654DY-T1-E3's low threshold voltage (V_GS(th) = 1.0–2.5 V) ensures reliable enhancement-mode turn-on even with gate drive tolerances.

Is SI4654DY-T1-E3 halogen-free and RoHS-compliant?

Yes, SI4654DY-T1-E3 is both lead-free and halogen-free per IEC 61249-2-21, as confirmed in the ordering information and features list. It meets RoHS Directive 2011/65/EU requirements and carries the "-E3" suffix denoting lead-free, halogen-free construction. SI4654DY-T1-E3 is suitable for consumer electronics requiring full environmental compliance without thermal or electrical trade-offs.

What is the safe operating area (SOA) limitation for SI4654DY-T1-E3 at DC conditions?

At DC, the safe operating area for SI4654DY-T1-E3 is limited by R_DS(on) - meaning the maximum sustainable drain current is governed by I_D² × R_DS(on) power dissipation and thermal resistance. For example, at 25 A and 4.0 mΩ, power is 2.5 W; with R_thJA = 50 °C/W, junction rise is ~125 °C - staying within the 150 °C T_J(max). SI4654DY-T1-E3's SOA curve confirms DC operation up to 18.6 A at T_A = 25 °C on standard FR4.

How does the body diode performance of SI4654DY-T1-E3 impact synchronous rectifier design?

SI4654DY-T1-E3's body diode has V_SD = 0.73–1.1 V at 3 A and t_rr = 32–60 ns, enabling effective synchronous rectification without external diodes. Its low Q_rr (26–55 nC) reduces switching loss during dead-time transitions, and the 100 % UIS test ensures robustness against reverse recovery stress. In practice, SI4654DY-T1-E3 allows elimination of Schottky diodes in POL converters while maintaining efficiency >92 % at 15 A.

SI4654DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 28.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 5.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4654DY-T1-E3 FAQ

1.How can I place an order for SI4654DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4654DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4654DY-T1-E3 reliable?

The price and inventory of SI4654DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4654DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4654DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4654DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4654DY-T1-E3?

SI4654DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4654DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4654DY-T1-E3?

For technical support, including SI4654DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4654DY-T1-E3 requirements.

6.How does Aetrix verify that SI4654DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4654DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4654DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4654DY-T1-E3?

All SI4654DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4654DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4654DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4654DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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