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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4654DY-T1-GE3

Name: SI4654DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4654DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4654DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4654DY-T1-GE3.pdf

Description:: MOSFET N-CH 25V 28.6A 8SO

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Product details

Overview

SI4654DY-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Power MOSFET in SO-8 package, with R_DS(on) = 0.004 Ω at V_GS = 10 V, 28.6 A continuous drain current (T_C = 25 °C), and 29 nC total gate charge - optimized for low-side synchronous buck and POL synchronous rectifier applications in notebooks and game consoles.

For engineers reviewing the SI4654DY-T1-GE3 datasheet, SI4654DY-T1-GE3 pinout, SI4654DY-T1-GE3 application, or SI4654DY-T1-GE3 equivalent, key selection criteria include its halogen-free and Pb-free construction, 100 % R_g and UIS tested reliability, and thermal performance validated under steady-state and pulsed conditions up to T_J = 150 °C.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (1.0–2.5 V) enables robust turn-on with standard 4.5 V logic-level drivers, while the 0.0052 Ω R_DS(on) at V_GS = 4.5 V supports efficient operation in 5 V rail systems.

The device integrates a body diode with 32–60 ns reverse recovery time and 26–55 nC Q_rr, enabling high-frequency synchronous rectification without external Schottky diodes. Thermal resistance from junction-to-foot is 17–21 °C/W, supporting direct thermal coupling to PCB copper in compact power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 3.3 V, 5 V, and 12 V input rails in point-of-load converters
R_DS(on) @ 10 V	0.004 Ω - Enables ≤ 1.6 W conduction loss at 20 A, critical for thermally constrained notebook power stages
R_DS(on) @ 4.5 V	0.0052 Ω - Ensures stable on-state performance with 5 V gate drive, eliminating need for level-shifting circuitry
Q_g	29 nC - Low gate charge reduces driver power loss and allows use of smaller, lower-cost gate drivers
T_J Range	−55 to +150 °C - Supports operation in automotive-adjacent industrial and gaming environments with wide ambient swings
R_thJA	37–50 °C/W - Defines maximum power dissipation (2.5 W at T_A = 25 °C) on standard FR4 PCB without heatsink
I_D (T_C = 25 °C)	28.6 A - Continuous current rating verified under case temperature control, suitable for high-current low-side switches

Pinout & Package

SO-8 narrow-body package (JEDEC MS-012), surface-mount, lead (Pb)-free and halogen-free per IEC 61249-2-21. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–16 V gate-source voltage; 0.9–1.8 Ω gate resistance limits ringing and EMI
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configuration
3 (S)	Source	Parallel source connection; reduces package inductance and improves current sharing across internal die segments
4 (S)	Source	Third source terminal; enhances thermal and electrical connection to PCB ground plane
5 (D)	Drain	Main power output node; internally connected to exposed drain paddle (pin 8) for thermal conduction
6 (D)	Drain	Second drain terminal; distributes high-current path and lowers effective R_DS(on) parasitic contribution
7 (D)	Drain	Third drain terminal; improves current handling and thermal spreading to PCB copper
8 (D)	Drain / Thermal Pad	Exposed drain paddle; primary thermal path to PCB; must be soldered to large copper area for R_thJF = 17–21 °C/W

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure of merit for high-efficiency, high-frequency switching
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching speed
100 % UIS tested	Validates ruggedness against unclamped inductive switching events common in buck converter freewheeling
Halogen-free & Pb-free	Meets RoHS 2011/65/EU and JEDEC J-STD-609A Class 1 requirements for green electronics manufacturing
SO-8 thermal footprint	Enables >2.5 W power dissipation on 1" × 1" FR4 board without external heatsink or forced air

Applications

Notebook DC-DC Converters	Game Console Power Supplies
Use Scenario: 5 V/12 V input to 1.0–1.8 V core voltage conversion in CPU/GPU VRMs using multiphase synchronous buck topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz, replacing Schottky diodes to reduce conduction loss. Use Value: 0.004 Ω R_DS(on) cuts conduction loss by >60 % vs. typical 40 V Schottky, improving full-load efficiency by 2–3 %.	Use Scenario: High-current POL regulation for GPU memory and SoC subsystems in handheld and console platforms. IC Role / Device Role / Timing Role: Low-side FET in discrete 2-phase or 3-phase buck controllers, driven by dedicated gate drivers. Use Value: 28.6 A continuous current rating and 70 A pulsed capability support transient loads up to 50 A without derating.
Industrial Embedded Power Modules	USB-C PD Fast Charging Circuits
Use Scenario: Compact 24 V input to 5–12 V intermediate bus conversion in programmable logic controllers and edge AI modules. IC Role / Device Role / Timing Role: Primary low-side switch in isolated or non-isolated buck converters operating at 250–500 kHz. Use Value: −55 to +150 °C operating range and 150 °C max junction temperature ensure reliability in sealed, fanless enclosures.	Use Scenario: Secondary-side synchronous rectification in 45–100 W USB-C PD adapters with GaN primary-side switching. IC Role / Device Role / Timing Role: Output rectifier in LLC or flyback-derived topologies, leveraging fast body diode recovery (32 ns t_rr) for zero-voltage switching assist. Use Value: 26–55 nC Q_rr minimizes reverse recovery loss during hard commutation, improving light-load efficiency.

Notebook DC-DC Converters

Game Console Power Supplies

Use Scenario: 5 V/12 V input to 1.0–1.8 V core voltage conversion in CPU/GPU VRMs using multiphase synchronous buck topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz, replacing Schottky diodes to reduce conduction loss.

Use Value: 0.004 Ω R_DS(on) cuts conduction loss by >60 % vs. typical 40 V Schottky, improving full-load efficiency by 2–3 %.

Use Scenario: High-current POL regulation for GPU memory and SoC subsystems in handheld and console platforms.

IC Role / Device Role / Timing Role: Low-side FET in discrete 2-phase or 3-phase buck controllers, driven by dedicated gate drivers.

Use Value: 28.6 A continuous current rating and 70 A pulsed capability support transient loads up to 50 A without derating.

Industrial Embedded Power Modules

USB-C PD Fast Charging Circuits

Use Scenario: Compact 24 V input to 5–12 V intermediate bus conversion in programmable logic controllers and edge AI modules.

IC Role / Device Role / Timing Role: Primary low-side switch in isolated or non-isolated buck converters operating at 250–500 kHz.

Use Value: −55 to +150 °C operating range and 150 °C max junction temperature ensure reliability in sealed, fanless enclosures.

Use Scenario: Secondary-side synchronous rectification in 45–100 W USB-C PD adapters with GaN primary-side switching.

IC Role / Device Role / Timing Role: Output rectifier in LLC or flyback-derived topologies, leveraging fast body diode recovery (32 ns t_rr) for zero-voltage switching assist.

Use Value: 26–55 nC Q_rr minimizes reverse recovery loss during hard commutation, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0045 Ω @ 10 V; Q_g = 34 nC; SO-8 package; not halogen-free	Higher gate charge increases driver losses; lacks halogen-free certification required for EU consumer devices	Choose IRF7470PBF only if halogen compliance is not mandated and gate drive strength exceeds 29 nC margin
DMN3020LSD-13	R_DS(on) = 0.0035 Ω @ 10 V; Q_g = 22 nC; dual-N SO-8; different pinout (no G-S-S-S-D-D-D-D)	Pinout incompatible; requires PCB redesign; optimized for dual-switch configurations, not single-FET low-side use	Select DMN3020LSD-13 only when dual-N topology is implemented and layout revision is feasible

Compared with IRF7470PBF and DMN3020LSD-13, SI4654DY-T1-GE3 offers the lowest thermal resistance to foot (17–21 °C/W), halogen-free compliance, and a pinout optimized for single-FET low-side placement - making it preferred for space-constrained, thermally sensitive, and regulatory-compliant notebook and gaming power designs.

Availability

SI4654DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook DC-DC converters, game console power supplies, and industrial embedded power modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SI4654DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si4654DY product line delivers high-current, low-R_DS(on) TrenchFET® MOSFETs for high-frequency synchronous rectification and low-side switching in portable and embedded power systems.

FAQ

What is the maximum continuous drain current for SI4654DY-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI4654DY-T1-GE3 is 23 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained power dissipation. Engineers must verify PCB copper area and airflow to maintain case temperature within this limit during full-load operation of SI4654DY-T1-GE3.

Does SI4654DY-T1-GE3 support 4.5 V gate drive in practical applications?

Yes, SI4654DY-T1-GE3 is fully characterized at V_GS = 4.5 V, delivering R_DS(on) = 0.0052 Ω at I_D = 10 A. Its gate threshold voltage range (1.0–2.5 V) ensures reliable turn-on with standard 4.5 V logic outputs. The 29 nC total gate charge at 4.5 V further confirms suitability for 5 V gate drive systems without external level shifters - a key design advantage of SI4654DY-T1-GE3.

What is the thermal resistance from junction to ambient for SI4654DY-T1-GE3 on a standard PCB?

The junction-to-ambient thermal resistance (R_thJA) for SI4654DY-T1-GE3 is 37 °C/W (typical) and 50 °C/W (maximum) when mounted on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value assumes standard soldering to recommended minimum pads per Application Note 826. Actual R_thJA will improve with larger copper areas or internal layers - critical for thermal validation of SI4654DY-T1-GE3 in final layouts.

Is SI4654DY-T1-GE3 suitable for unclamped inductive switching (UIS) events?

Yes, SI4654DY-T1-GE3 is 100 % UIS tested per datasheet, with a rated single-pulse avalanche energy (E_AS) of 45 mJ and avalanche current (I_AS) of 30 A. This ruggedness is essential for surviving inductive kickback during synchronous buck freewheeling or controller fault conditions. Designers can rely on this validated rating when sizing snubbers or defining safe operating area margins for SI4654DY-T1-GE3.

How does the body diode performance of SI4654DY-T1-GE3 impact synchronous rectifier design?

The body diode of SI4654DY-T1-GE3 has V_SD = 0.73–1.1 V at I_S = 3 A and t_rr = 32–60 ns, enabling efficient dead-time conduction and reducing need for external diodes. Its Q_rr = 26–55 nC directly impacts switching loss during commutation - a key parameter for optimizing gate drive timing and minimizing shoot-through risk in synchronous rectifier circuits using SI4654DY-T1-GE3.

SI4654DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 28.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 5.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4654DY-T1-GE3 FAQ

1.How can I place an order for SI4654DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4654DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4654DY-T1-GE3 reliable?

The price and inventory of SI4654DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4654DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4654DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4654DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4654DY-T1-GE3?

SI4654DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4654DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4654DY-T1-GE3?

For technical support, including SI4654DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4654DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4654DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4654DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4654DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4654DY-T1-GE3?

All SI4654DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4654DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4654DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4654DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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