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Vishay Siliconix SI4666DY-T1-GE3
- Part No.:
- SI4666DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4666DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 16.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,584
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Product details
Overview
SI4666DY-T1-GE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Power MOSFET in SO-8 package, delivering RDS(on) = 0.010 Ω at VGS = 10 V, 16.5 A continuous drain current (TC = 25 °C), and 10.7 nC total gate charge - optimized for high-efficiency synchronous buck converters in DC/DC power stages.
For engineers reviewing the SI4666DY-T1-GE3 datasheet, SI4666DY-T1-GE3 pinout, SI4666DY-T1-GE3 application, or SI4666DY-T1-GE3 equivalent, key selection criteria include low RDS(on) at 4.5 V drive, 100 % Rg and UIS tested reliability, halogen-free and RoHS-compliant construction, and thermal performance validated on FR4 board per JEDEC MS-012 footprint.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve enhanced conduction efficiency and fast switching with low Qg (10.7 nC @ 4.5 V) and low Ciss (1145 pF). Its gate threshold voltage (0.6–1.5 V) supports logic-level drive compatibility while maintaining robust noise immunity.
The device features a fully characterized body diode with trr = 16–32 ns and Qrr = 6–12 nC, enabling efficient synchronous rectification. Thermal design is supported by verified RthJA = 38–50 °C/W (t ≤ 10 s) and RthJF = 20–25 °C/W (steady state) for direct heatsink coupling via drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage compatible with 3.3 V–12 V input rails in point-of-load converters |
| RDS(on) | 0.010 Ω @ VGS = 10 V - Enables <165 mW conduction loss at 10 A, critical for thermally constrained PCBs |
| ID (continuous) | 16.5 A @ TC = 25 °C - Supports high-current output stages without forced air cooling |
| Qg | 10.7 nC @ VGS = 4.5 V - Reduces gate driver power demand and switching losses in 500 kHz–1 MHz designs |
| tr/tf | 12/10 ns @ VGEN = 4.5 V - Enables clean edge control with minimal EMI in compact layouts |
| VGS(th) | 0.6–1.5 V - Ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIO |
| EAS | 11.25 mJ - Withstands single-pulse inductive energy during transient overload or startup |
Pinout & Package
SI4666DY-T1-GE3 is housed in a standard SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for thermal enhancement. The package measures 4.9 mm × 3.9 mm × 1.55 mm (D × E × A) and uses gull-wing leads on 1.27 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Top View) | G, D, S, D, S, D, S, D | Gate (Pin 1), Drain (Pins 2, 4, 6, 8), Source (Pins 3, 5, 7) - Parallel drain/source terminals reduce package inductance and improve current sharing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lowest RDS(on) per die area among Vishay's 25 V SO-8 MOSFETs, enabling higher power density |
| 100 % Rg and UIS tested | Ensures gate robustness against overvoltage transients and avalanche energy tolerance without screening failure |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer, industrial, and automotive end-equipment |
| Low Qgd/Qg ratio (2.2/10.7 nC) | Minimizes Miller-induced shoot-through risk in half-bridge configurations with fast gate drivers |
| Body diode trr < 32 ns | Reduces reverse recovery losses and associated ringing in synchronous rectifier operation |
Applications
| Server VRM | Industrial PLC Power Supply |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or EPYC CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–800 kHz with 3.3 V gate drive. Use Value: 0.010 Ω RDS(on) at 10 V reduces conduction loss by >25 % vs. legacy 25 V MOSFETs, lowering thermal load on VRM heatsinks. |
Use Scenario: Isolated 24 V input DC/DC module powering I/O modules and fieldbus interfaces in programmable logic controllers. IC Role / Device Role / Timing Role: Primary-side high-efficiency switch in active-clamp forward or LLC resonant topology. Use Value: 11.25 mJ EAS withstands repetitive inductive spikes from solenoid loads without derating. |
| Telecom Base Station PSU | Automotive ADAS Camera Module |
|
Use Scenario: 48 V to 12 V intermediate bus converter in macro-cell radio units requiring high reliability and low EMI. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge configuration. Use Value: 10.7 nC Qg at 4.5 V enables use of low-power gate drivers, reducing standby consumption below 100 mW. |
Use Scenario: 12 V input to 3.3 V/1.8 V dual-output power supply for image sensor and ISP in rear-view or surround-view cameras. IC Role / Device Role / Timing Role: Low-voltage, high-frequency buck switch in space-constrained camera housing. Use Value: SO-8 package with exposed drain pad achieves 20 °C/W RthJF, allowing 1.5 W dissipation without external heatsink at 85 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 25 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.012 Ω @ 10 V; Qg = 12.5 nC; same SO-8 package but non-halogen-free | Lacks halogen-free certification; slightly higher switching loss at 1 MHz | Acceptable where RoHS compliance suffices but halogen-free is not mandated |
| DMN2020LSD-13 | RDS(on) = 0.013 Ω @ 4.5 V; Qg = 11.5 nC; dual-N in SO-8, requires layout rework | Integrated dual configuration increases gate drive complexity and board area | Only suitable when dual-switch topology is already implemented and footprint reuse is prioritized |
Compared with IRF7470PBF and DMN2020LSD-13, SI4666DY-T1-GE3 offers the lowest RDS(on) at 4.5 V (0.011 Ω), halogen-free compliance, and single-device simplicity - making it optimal for new designs targeting high efficiency, regulatory alignment, and layout scalability.
Availability
SI4666DY-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, and telecom base station PSUs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SI4666DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The Si4666DY product line targets high-efficiency DC/DC conversion in space- and thermally-constrained applications, emphasizing low RDS(on), fast switching, and robust packaging for industrial and computing infrastructure.
FAQ
What is the maximum continuous drain current for SI4666DY-T1-GE3 at 70 °C case temperature?
The SI4666DY-T1-GE3 supports 9.3 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied in thermal simulations using the verified RthJF = 20–25 °C/W parameter for accurate junction temperature prediction in SI4666DY-T1-GE3 designs.
Does SI4666DY-T1-GE3 support 3.3 V logic-level gate drive?
Yes, SI4666DY-T1-GE3 is fully compatible with 3.3 V gate drive: its VGS(th) range is 0.6–1.5 V, and RDS(on) is specified at 0.011 Ω @ VGS = 4.5 V and 0.014 Ω @ VGS = 2.5 V. At 3.3 V, typical RDS(on) falls between these values, ensuring robust conduction without requiring level-shifting circuitry in SI4666DY-T1-GE3-based buck regulators.
What is the safe operating area (SOA) limitation for SI4666DY-T1-GE3 at DC conditions?
At DC, the SI4666DY-T1-GE3 SOA is limited by RDS(on) and thermal resistance, with maximum continuous drain current dropping to 9.4 A at TA = 70 °C and 2.3 A at TA = 70 °C for source-diode conduction. The SOA curve confirms no secondary breakdown risk under DC stress, and the device remains within safe limits up to VDS = 10 V and ID = 10 A when mounted on a 1" × 1" FR4 board - a key boundary used in SI4666DY-T1-GE3 thermal validation.
Is SI4666DY-T1-GE3 qualified for automotive applications?
SI4666DY-T1-GE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. While its -55 to 150 °C operating range meets ambient temperature requirements for some under-hood modules, Vishay does not publish automotive-grade reliability data (e.g., HTOL, UHAST) for this part. For automotive ADAS or infotainment power stages, SI4666DY-T1-GE3 may be used only after full system-level qualification by the customer - not as a drop-in replacement for AEC-Q101 parts.
How does the body diode performance of SI4666DY-T1-GE3 compare to standard silicon diodes?
The SI4666DY-T1-GE3 body diode exhibits VSD = 0.71–1.1 V at IS = 5 A and trr = 16–32 ns, significantly faster and lower forward drop than discrete 1 A Schottky diodes (typically 0.45–0.55 V but with higher leakage and no integrated gate control). This enables efficient synchronous rectification in SI4666DY-T1-GE3-based converters without external diode placement or layout overhead.
SI4666DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1145 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4666DY-T1-GE3 FAQ
1.How can I place an order for SI4666DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4666DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4666DY-T1-GE3 reliable?
The price and inventory of SI4666DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4666DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4666DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4666DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4666DY-T1-GE3?
SI4666DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4666DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4666DY-T1-GE3?
For technical support, including SI4666DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4666DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4666DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4666DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4666DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4666DY-T1-GE3?
All SI4666DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4666DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4666DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4666DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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