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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4684DY-T1-E3

Name: SI4684DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4684DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4684DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4684DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 16A 8SO

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Product details

Overview

SI4684DY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in SO-8 package, featuring R_DS(on) = 0.0094 Ω at V_GS = 10 V, Q_g = 14 nC (typ.), and 16-A continuous drain current at T_C = 25 °C. It serves as a high-side switch in DC/DC converters for notebook and server power stages.

For engineers reviewing the SI4684DY-T1-E3 datasheet, SI4684DY-T1-E3 pinout, SI4684DY-T1-E3 application, or SI4684DY-T1-E3 equivalent, key selection criteria include low gate charge for fast switching, ultra-low on-resistance for conduction loss reduction, thermal performance under high-current pulsed loads, and RoHS-compliant lead-free packaging.

Technical Context

This MOSFET uses Vishay's TrenchFET® architecture with WFET®-optimized gate design to minimize Q_gd, enabling high-efficiency synchronous rectification and high-frequency PWM operation. Its 30-V V_DS rating and ±12-V V_GS support standard logic-level and 5-V gate drive compatibility.

The device delivers 4.45 W maximum power dissipation at T_C = 25 °C with R_thJC = 22 °C/W (typ.) and supports 20-A single-pulse avalanche energy (E_AS = 20 mJ), making it suitable for transient-robust high-side switching in buck and multiphase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24-V nominal DC/DC systems with margin for transients.
R_DS(on)	0.0094 Ω @ V_GS = 10 V - Enables ≤1.5 W conduction loss at 12-A load, critical for thermally constrained notebooks.
Q_g	14 nC @ V_GS = 4.5 V - Reduces gate drive power and enables >1 MHz switching without excessive driver stress.
I_D (cont.)	16 A @ T_C = 25 °C - Sustains high peak currents in server VRM phases with minimal derating.
R_thJA	36 °C/W (typ.) - Allows ~70 °C junction rise above ambient on standard FR4 PCB, supporting compact layout.
V_GS(th)	0.6–1.5 V - Ensures reliable turn-on with 3.3-V or 5-V gate drivers; low threshold minimizes Miller-induced shoot-through risk.
E_AS	20 mJ - Withstands inductive energy spikes during hard-switching events in non-synchronous topologies.

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal conduction; 8-pin layout optimized for high-current routing and thermal relief.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally connected to exposed pad; primary current path and thermal interface to PCB copper pour.
6	Gate (G)	High-impedance control terminal; low C_iss (2080 pF) and Q_gd (2.8 nC) reduce switching losses and EMI.
S	Source (S)	Reference node for gate drive; pins 1–5 and 7–8 are source-connected in parallel for low-inductance return path.

Key Features

Feature	Design Value
Extremely low Q_gd	2.8 nC - Suppresses Miller plateau duration, enabling faster turn-off and reduced cross-conduction in synchronous buck stages.
TrenchFET® construction	Optimized cell density and trench geometry - Achieves 0.0094 Ω R_DS(on) in SO-8 without die size compromise.
100 % R_g tested	R_g = 0.2–0.9 Ω - Guarantees consistent gate drive timing and eliminates need for external gate resistors in most designs.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - Required for CE-marked computing and data center equipment.
Low body diode V_SD	0.70–1.1 V @ I_S = 2.3 A - Minimizes reverse recovery loss during dead-time conduction in synchronous rectifiers.

Applications

Notebook CPU Voltage Regulator	Server DDR Memory VRM
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to mobile CPUs with dynamic load steps up to 100 A/µs. IC Role / Device Role / Timing Role: High-side power switch operating at 300–600 kHz with synchronous rectification. Use Value: Ultra-low R_DS(on) and Q_g directly reduce system power loss and thermal footprint in thin-profile chassis.	Use Scenario: Point-of-load regulator delivering stable 1.2 V to DDR4/DDR5 memory modules in dual-socket servers. IC Role / Device Role / Timing Role: Phase-leg switch in 4–6 phase interleaved topology with tight thermal constraints. Use Value: 20-mJ avalanche rating ensures robustness against voltage overshoot during rapid load transients.
Industrial PLC Power Supply	Telecom Baseband Board
Use Scenario: Isolated DC/DC front-end stage converting 48 V to 12 V for programmable logic controllers with extended temperature operation. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converter. Use Value: -55 to 150 °C operating range and 90 °C/W R_thJA (max) enable reliable operation in uncooled enclosures.	Use Scenario: Compact 5-V auxiliary rail generation for FPGA configuration and SerDes power in 5G baseband units. IC Role / Device Role / Timing Role: High-efficiency synchronous buck switch operating at >1 MHz with low EMI. Use Value: Low Crss (135 pF) and fast tr/tf (12–20 ns) suppress switching noise coupling into sensitive RF sections.

Notebook CPU Voltage Regulator

Server DDR Memory VRM

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to mobile CPUs with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: High-side power switch operating at 300–600 kHz with synchronous rectification.

Use Value: Ultra-low R_DS(on) and Q_g directly reduce system power loss and thermal footprint in thin-profile chassis.

Use Scenario: Point-of-load regulator delivering stable 1.2 V to DDR4/DDR5 memory modules in dual-socket servers.

IC Role / Device Role / Timing Role: Phase-leg switch in 4–6 phase interleaved topology with tight thermal constraints.

Use Value: 20-mJ avalanche rating ensures robustness against voltage overshoot during rapid load transients.

Industrial PLC Power Supply

Telecom Baseband Board

Use Scenario: Isolated DC/DC front-end stage converting 48 V to 12 V for programmable logic controllers with extended temperature operation.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant converter.

Use Value: -55 to 150 °C operating range and 90 °C/W R_thJA (max) enable reliable operation in uncooled enclosures.

Use Scenario: Compact 5-V auxiliary rail generation for FPGA configuration and SerDes power in 5G baseband units.

IC Role / Device Role / Timing Role: High-efficiency synchronous buck switch operating at >1 MHz with low EMI.

Use Value: Low Crss (135 pF) and fast tr/tf (12–20 ns) suppress switching noise coupling into sensitive RF sections.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N04L	R_DS(on) = 0.0040 Ω @ 10 V, but SO-8 package lacks exposed drain pad; higher C_iss (2700 pF).	Better conduction loss, but inferior thermal resistance (R_thJA = 55 °C/W) limits high-duty-cycle use.	Prefer SI4684DY-T1-E3 where board-level thermal management is constrained and pulse current dominates.
ON Semiconductor NTMFS4C026P	R_DS(on) = 0.0026 Ω @ 10 V, but rated only for 30-V V_DS with tighter V_GS tolerance (±8 V); no avalanche rating specified.	Superior R_DS(on) for ultra-low-loss designs, but unsuitable for transient-prone industrial environments.	Choose SI4684DY-T1-E3 when system-level reliability requires validated 20-mJ avalanche capability and ±12-V gate rating.

Compared with IPP040N04L and NTMFS4C026P, SI4684DY-T1-E3 offers balanced trade-offs: lower thermal resistance than IPP040N04L due to exposed drain, and guaranteed avalanche ruggedness absent in NTMFS4C026P-making it optimal for thermally dense, transient-exposed DC/DC stages.

Availability

SI4684DY-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU voltage regulators, server DDR memory VRMs, and industrial PLC power supplies requiring stable component supply across long production cycles.

Supply support for SI4684DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.

The Si4684DY belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in space-constrained computing and communications infrastructure.

FAQ

What is the maximum continuous drain current for SI4684DY-T1-E3 at 70 °C case temperature?

The SI4684DY-T1-E3 supports 12.9 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained high-power operation and must be verified against actual PCB copper area and airflow conditions in the final design. The SI4684DY-T1-E3 datasheet confirms this value under steady-state conditions with proper heatsinking.

Does SI4684DY-T1-E3 support logic-level gate drive?

Yes, SI4684DY-T1-E3 has a gate threshold voltage (V_GS(th)) ranging from 0.6 V to 1.5 V, enabling full enhancement with 3.3-V or 5-V gate drivers. Its R_DS(on) = 0.0115 Ω at V_GS = 4.5 V confirms robust conduction under logic-level drive, making SI4684DY-T1-E3 suitable for microcontroller-driven power stages without level-shifting circuitry.

What is the thermal resistance from junction to ambient for SI4684DY-T1-E3?

The SI4684DY-T1-E3 has a typical junction-to-ambient thermal resistance (R_thJA) of 36 °C/W when mounted on a 1" × 1" FR4 board, with a maximum of 50 °C/W. This value assumes standard JEDEC test conditions and is critical for estimating junction temperature rise in real-world layouts. The SI4684DY-T1-E3 thermal performance is optimized via its exposed drain pad, which must be soldered to a large copper pour for best results.

Is SI4684DY-T1-E3 halogen-free and RoHS compliant?

Yes, SI4684DY-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC, as confirmed in the official Vishay datasheet (Document Number: 73324, Rev. C). The "-E3" suffix explicitly denotes lead-free and halogen-free construction, making SI4684DY-T1-E3 suitable for environmentally regulated markets including EU and China RoHS.

What is the body diode reverse recovery time (t_rr) of SI4684DY-T1-E3?

The SI4684DY-T1-E3 exhibits a typical body diode reverse recovery time (t_rr) of 30 ns under test conditions of I_F = 9.5 A, dI/dt = 100 A/µs, and T_J = 25 °C. This fast recovery characteristic reduces switching losses in synchronous rectifier and freewheeling applications. The SI4684DY-T1-E3 datasheet also specifies Q_rr = 26–40 nC, confirming low stored charge for minimal voltage overshoot.

SI4684DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2080 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 4.45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4684DY-T1-E3 FAQ

1.How can I place an order for SI4684DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4684DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4684DY-T1-E3 reliable?

The price and inventory of SI4684DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4684DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4684DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4684DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4684DY-T1-E3?

SI4684DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4684DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4684DY-T1-E3?

For technical support, including SI4684DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4684DY-T1-E3 requirements.

6.How does Aetrix verify that SI4684DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4684DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4684DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4684DY-T1-E3?

All SI4684DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4684DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4684DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4684DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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