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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4684DY-T1-GE3

Name: SI4684DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4684DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4684DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4684DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 16A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI4684DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, optimized for high-side DC/DC conversion with R_DS(on) = 0.0094 Ω at V_GS = 10 V, Q_g = 14 nC (typ.), and 16 A continuous drain current at T_C = 25 °C - deployed in notebook and server power stages.

For engineers reviewing the SI4684DY-T1-GE3 datasheet, SI4684DY-T1-GE3 pinout, SI4684DY-T1-GE3 application, or SI4684DY-T1-GE3 equivalent, key selection criteria include low gate charge for fast switching, halogen-free compliance per IEC 61249-2-21, and thermal resistance R_thJA = 36 °C/W (typ.) under 1" × 1" FR4 mounting.

Technical Context

This MOSFET uses TrenchFET® process architecture with WFET®-optimized gate structure to minimize Q_gd, enabling reduced switching losses in synchronous buck high-side configurations. Its 30 V V_DS rating and ±12 V V_GS support standard 3.3 V/5 V/12 V gate drive systems.

Specified R_DS(on) values are validated at both V_GS = 10 V (0.0094 Ω) and V_GS = 4.5 V (0.0115 Ω), confirming robust operation with logic-level and standard gate drivers. Body diode t_rr = 30–45 ns and Q_rr = 26–40 nC support moderate-frequency hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with margin for transients in point-of-load converters
R_DS(on) @ V_GS = 10 V	0.0094 Ω - enables <1.5 W conduction loss at 12 A, critical for thermally constrained notebook PCBs
Q_g	14 nC (typ. at V_GS = 4.5 V) - allows efficient 500 kHz–1 MHz switching with low driver power dissipation
I_D (continuous)	16 A at T_C = 25 °C - rated for high-current high-side switch in compact 8-pin SOIC footprint
R_thJA	36 °C/W (typ.) - defines thermal derating on standard FR4; junction-to-foot R_thJF = 22 °C/W aids heatsink-aware layout
V_GS(th)	0.6–1.5 V - ensures reliable turn-on with 3.3 V logic drivers while avoiding spurious conduction
t_rr / Q_rr	30–45 ns / 26–40 nC - limits body diode recovery loss during dead-time in synchronous rectification

Pinout & Package

SO-8 surface-mount package with exposed drain pad (pins 1–4: S, G, S, S; pins 5–8: D, D, D, D), optimized for thermal performance and high-current routing. Drain terminals are internally paralleled to reduce package inductance and improve current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 4	Source	Common source node for internal die array; connects to low-side switch or ground plane
2	Gate	Control terminal requiring <14 nC total charge; low R_g = 0.2–0.9 Ω minimizes ringing
5, 6, 7, 8	Drain	Paralleled high-current output path tied to input rail; exposed pad enhances thermal transfer to PCB

Key Features

Feature	Design Value
WFET® gate technology	Reduces Q_gd to 2.8 nC, lowering Miller-induced switching delay and improving dV/dt immunity
TrenchFET® construction	Enables 30 V rating with sub-10 mΩ R_DS(on) in SO-8, eliminating need for larger packages or paralleling
100 % R_g tested	Guarantees gate resistance between 0.2–0.9 Ω, ensuring consistent drive strength and EMI behavior
Halogen-free & RoHS-compliant	Fulfills IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated computing equipment

Applications

Notebook CPU VRM High-Side Switch	Server DDR Memory Power Rail
Use Scenario: High-efficiency 1–2 phase buck converter delivering 12–25 A to mobile CPU cores at 0.8–1.3 V. IC Role / Device Role / Timing Role: High-side synchronous rectifier switching at 500 kHz–1 MHz with tight duty-cycle control. Use Value: Low R_DS(on) and Q_g directly reduce conduction + switching losses, enabling >92 % efficiency in thermally dense chassis.	Use Scenario: Point-of-load regulator supplying 1.2 V/15 A to DDR4/DDR5 memory subsystems in dual-socket servers. IC Role / Device Role / Timing Role: Primary high-side switch in multiphase controller-driven topology with interleaved timing. Use Value: Paralleled drain pins and low R_thJF = 22 °C/W allow direct thermal coupling to inner-layer copper, sustaining full load without forced air.
Industrial PLC I/O Power Distribution	Telecom Baseband Board Bias Supply
Use Scenario: 24 V input to 5 V/3.3 V isolated auxiliary rails powering digital I/O modules with surge immunity. IC Role / Device Role / Timing Role: High-side switch in non-isolated buck stage preceding isolated DC/DC converters. Use Value: 30 V V_DS and 20 A avalanche rating (IAS = 20 A) withstand 40 V transients per IEC 61000-4-5 Level 3.	Use Scenario: Compact 48 V to 3.3 V intermediate bus converter feeding FPGA, ADC, and RF front-end bias rails. IC Role / Device Role / Timing Role: High-frequency (1 MHz) high-side switch in space-constrained baseband board layout. Use Value: SO-8 footprint with 4 drain pins reduces layout parasitics, preserving efficiency above 90 % at 1 A–8 A loads.

Notebook CPU VRM High-Side Switch

Server DDR Memory Power Rail

Use Scenario: High-efficiency 1–2 phase buck converter delivering 12–25 A to mobile CPU cores at 0.8–1.3 V.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switching at 500 kHz–1 MHz with tight duty-cycle control.

Use Value: Low R_DS(on) and Q_g directly reduce conduction + switching losses, enabling >92 % efficiency in thermally dense chassis.

Use Scenario: Point-of-load regulator supplying 1.2 V/15 A to DDR4/DDR5 memory subsystems in dual-socket servers.

IC Role / Device Role / Timing Role: Primary high-side switch in multiphase controller-driven topology with interleaved timing.

Use Value: Paralleled drain pins and low R_thJF = 22 °C/W allow direct thermal coupling to inner-layer copper, sustaining full load without forced air.

Industrial PLC I/O Power Distribution

Telecom Baseband Board Bias Supply

Use Scenario: 24 V input to 5 V/3.3 V isolated auxiliary rails powering digital I/O modules with surge immunity.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck stage preceding isolated DC/DC converters.

Use Value: 30 V V_DS and 20 A avalanche rating (IAS = 20 A) withstand 40 V transients per IEC 61000-4-5 Level 3.

Use Scenario: Compact 48 V to 3.3 V intermediate bus converter feeding FPGA, ADC, and RF front-end bias rails.

IC Role / Device Role / Timing Role: High-frequency (1 MHz) high-side switch in space-constrained baseband board layout.

Use Value: SO-8 footprint with 4 drain pins reduces layout parasitics, preserving efficiency above 90 % at 1 A–8 A loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.0085 Ω @ 10 V but Q_g = 22 nC; SO-8, same pinout	Higher gate charge increases driver loss at >500 kHz; better for lower-frequency, higher-current use	Prefer SI4684DY-T1-GE3 when gate drive capability is limited or switching frequency exceeds 600 kHz
DMN3020LSD-13	R_DS(on) = 0.0095 Ω @ 10 V, Q_g = 15.5 nC; dual-N in SO-8, shares source/gate pins	Integrated dual configuration suits half-bridge layouts but requires redesign for single-switch use	Select SI4684DY-T1-GE3 for dedicated high-side replacement where layout reuse and thermal isolation are priorities

Compared with IRF7470PBF and DMN3020LSD-13, SI4684DY-T1-GE3 delivers the lowest Q_g/R_DS(on) ratio in its class, making it optimal for high-frequency, thermally constrained high-side switching where driver efficiency and junction temperature rise must be minimized.

Availability

SI4684DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server memory power rails, and industrial PLC I/O distribution requiring stable component supply and halogen-free compliance.

Supply support for SI4684DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and resistive solutions for demanding electronic systems.

The Si4684DY product line targets high-efficiency, high-density DC/DC conversion in portable and enterprise computing, emphasizing low Q_gd, halogen-free packaging, and validated thermal performance on standard PCBs.

FAQ

What is the maximum continuous drain current for SI4684DY-T1-GE3 at 70 °C case temperature?

The SI4684DY-T1-GE3 supports 12.9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area and airflow. The SI4684DY-T1-GE3 datasheet confirms this value is measured with device mounted on 1" × 1" FR4 board.

Does SI4684DY-T1-GE3 support logic-level gate drive?

Yes, SI4684DY-T1-GE3 is fully compatible with logic-level gate drive: its V_GS(th) range is 0.6–1.5 V, and R_DS(on) is specified at 4.5 V (0.0115 Ω). At V_GS = 4.5 V and I_D = 9.5 A, the SI4684DY-T1-GE3 delivers low on-resistance while maintaining fast switching via Q_g = 14 nC (typ.).

What is the avalanche energy rating of SI4684DY-T1-GE3?

The SI4684DY-T1-GE3 has a single-pulse avalanche energy rating E_AS = 20 mJ, tested with L = 0.1 mH. This rating applies under controlled conditions (T_J = 25 °C, V_DD ≤ BV_DSS) and supports transient overvoltage handling in DC/DC converters. The SI4684DY-T1-GE3 datasheet specifies I_AS = 20 A peak avalanche current under the same test setup.

How does the halogen-free status of SI4684DY-T1-GE3 impact its manufacturing compliance?

The SI4684DY-T1-GE3 meets IEC 61249-2-21 halogen-free requirements and RoHS Directive 2002/95/EC, verified by Vishay's material declarations. This makes the SI4684DY-T1-GE3 suitable for environmentally regulated end equipment such as ENERGY STAR–certified notebooks and ETSI-compliant telecom hardware without requiring additional substance screening.

What is the typical gate resistance (R_g) of SI4684DY-T1-GE3, and why is it tested?

The SI4684DY-T1-GE3 has a guaranteed gate resistance R_g of 0.2–0.9 Ω (typ. 0.55 Ω), and 100 % of units undergo R_g testing. This ensures predictable gate ring damping and driver stage stability - critical for minimizing EMI in high-frequency synchronous buck converters using the SI4684DY-T1-GE3.

SI4684DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2080 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 4.45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4684DY-T1-GE3 FAQ

1.How can I place an order for SI4684DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4684DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4684DY-T1-GE3 reliable?

The price and inventory of SI4684DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4684DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4684DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4684DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4684DY-T1-GE3?

SI4684DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4684DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4684DY-T1-GE3?

For technical support, including SI4684DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4684DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4684DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4684DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4684DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4684DY-T1-GE3?

All SI4684DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4684DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4684DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4684DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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