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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4686DY-T1-E3

Name: SI4686DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4686DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4686DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4686DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 18.2A 8SO

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Product details

Overview

SI4686DY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, featuring R_DS(on) = 9.5 mΩ at V_GS = 10 V, Q_g = 9.2 nC (V_GS = 5 V), and 18.2 A continuous drain current at T_C = 25 °C. It is optimized for high-side DC/DC conversion in notebook and server power stages.

For engineers reviewing the SI4686DY-T1-E3 datasheet, SI4686DY-T1-E3 pinout, SI4686DY-T1-E3 application, or SI4686DY-T1-E3 equivalent, key selection criteria include low gate charge for fast switching, tight R_DS(on) tolerance, SO-8 thermal performance, and Pb-free/halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET employs Vishay's TrenchFET® process with WFET® technology to minimize Q_gd, reducing switching losses in hard-switched topologies. Its gate threshold voltage (1–3 V) and low C_iss (1220 pF) support robust gate drive compatibility with standard 5 V and 10 V controllers.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 2.6 A and t_rr = 25–50 ns, enabling synchronous rectification and freewheeling in buck converters without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V input rail applications
R_DS(on)	9.5 mΩ @ V_GS = 10 V - Enables ≤1.3 W conduction loss at 13.8 A in high-current power stages
Q_g	9.2 nC @ V_GS = 5 V - Supports efficient 500 kHz–1 MHz switching with minimal gate driver power
I_D (continuous)	18.2 A @ T_C = 25 °C - Sustains high load currents on thermally enhanced PCBs
R_thJA	35 °C/W (typ.) - Delivers 3.0 W power dissipation at T_A = 25 °C in SO-8 footprint
C_iss	1220 pF @ V_DS = 15 V - Limits Miller-induced shoot-through risk in high-dV/dt environments

Pinout & Package

SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for enhanced thermal conduction. Pin 1–8 arranged in dual-row configuration; pins 1, 2, 3, and 4 are source terminals; pins 5–8 are drain terminals; pin 3 is gate; pin 1 is source (common).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce package inductance and improve current sharing in high-frequency operation
3	Gate (G)	Single gate input with R_g = 0.8–1.2 Ω - enables stable gate drive without external series resistance
5, 6, 7, 8	Drain (D)	Four paralleled drain terminals and exposed backside metal maximize heat transfer to PCB copper pour

Key Features

Feature	Design Value
Extremely low Q_gd	2.8 nC - Reduces Miller plateau time and improves turn-off controllability in synchronous buck stages
100 % R_g tested	Guarantees gate resistance between 0.8–1.2 Ω - eliminates need for gate resistor tuning during design validation
TrenchFET® construction	Enables 30 V rating with sub-10 mΩ R_DS(on) in SO-8 - delivers higher power density than planar alternatives
Pb-free & halogen-free	Complies with IEC 61249-2-21 - meets RoHS and JEDEC MSL3 reflow requirements without derating

Applications

Notebook DC/DC Converters	Server VRMs
Use Scenario: High-efficiency 12 V to 1.2 V step-down conversion for CPU core power delivery in ultrathin notebooks. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500–800 kHz with 5 V gate drive. Use Value: 9.5 mΩ R_DS(on) and 9.2 nC Q_g reduce total power loss by ≥12% vs. legacy 15 mΩ SO-8 MOSFETs at 15 A load.	Use Scenario: Multiphase 48 V to 12 V intermediate bus converter in rack-mounted servers. IC Role / Device Role / Timing Role: Primary-side switching element in interleaved buck topology with 10 V gate drive and forced-air cooling. Use Value: Four paralleled drain/source terminals lower package parasitic inductance, improving phase current balance and EMI margin.
Industrial DC/DC Modules	Telecom Power Supplies
Use Scenario: Isolated 24 V input to 5 V/3.3 V auxiliary rail generation in programmable logic controllers. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology. Use Value: Body diode t_rr = 25–50 ns and Q_rr = 15–30 nC enable clean zero-voltage switching transitions without snubbers.	Use Scenario: 48 V hot-swap and OR-ing circuitry in distributed telecom power systems. IC Role / Device Role / Timing Role: Load switch controlling power path to downstream DC/DC stages with reverse-current blocking. Use Value: V_GS(th) = 1–3 V ensures reliable turn-on with standard 3.3 V control logic and provides overvoltage protection headroom.

Notebook DC/DC Converters

Server VRMs

Use Scenario: High-efficiency 12 V to 1.2 V step-down conversion for CPU core power delivery in ultrathin notebooks.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500–800 kHz with 5 V gate drive.

Use Value: 9.5 mΩ R_DS(on) and 9.2 nC Q_g reduce total power loss by ≥12% vs. legacy 15 mΩ SO-8 MOSFETs at 15 A load.

Use Scenario: Multiphase 48 V to 12 V intermediate bus converter in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary-side switching element in interleaved buck topology with 10 V gate drive and forced-air cooling.

Use Value: Four paralleled drain/source terminals lower package parasitic inductance, improving phase current balance and EMI margin.

Industrial DC/DC Modules

Telecom Power Supplies

Use Scenario: Isolated 24 V input to 5 V/3.3 V auxiliary rail generation in programmable logic controllers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: Body diode t_rr = 25–50 ns and Q_rr = 15–30 nC enable clean zero-voltage switching transitions without snubbers.

Use Scenario: 48 V hot-swap and OR-ing circuitry in distributed telecom power systems.

IC Role / Device Role / Timing Role: Load switch controlling power path to downstream DC/DC stages with reverse-current blocking.

Use Value: V_GS(th) = 1–3 V ensures reliable turn-on with standard 3.3 V control logic and provides overvoltage protection headroom.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 11.5 mΩ @ 10 V; Q_g = 12.5 nC; TO-252 package	Higher thermal resistance (R_thJA ≈ 62 °C/W); requires heatsink for >8 A loads	Choose IRF7470PBF only when board space permits DPAK and higher R_DS(on) is acceptable.
DMN3026LSD-13	R_DS(on) = 8.5 mΩ @ 10 V; Q_g = 10.5 nC; SO-8 with different pinout (G-S-D layout)	Non-pin-compatible; gate and source swapped - requires PCB redesign	Consider DMN3026LSD-13 only for new designs where layout flexibility allows gate-source reorientation.

Compared with IRF7470PBF and DMN3026LSD-13, SI4686DY-T1-E3 offers the lowest combined R_DS(on)/Q_g figure-of-merit in SO-8, best-in-class thermal performance via quad-drain architecture, and verified Pb-free/halogen-free compliance without trade-offs in switching speed or ruggedness.

Availability

SI4686DY-T1-E3 is available at Aetrix Electronics and suitable for notebook DC/DC converters, server VRMs, and industrial DC/DC modules requiring stable component supply, long-term lifecycle assurance, and full traceability.

Supply support for SI4686DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The Si4686DY product line targets high-efficiency, high-density DC/DC power conversion, leveraging TrenchFET® and WFET® technologies to deliver ultra-low R_DS(on) and Q_g in standard surface-mount packages.

FAQ

What is the maximum continuous drain current for SI4686DY-T1-E3 at 70 °C case temperature?

The maximum continuous drain current for SI4686DY-T1-E3 is 14.5 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal constraints and is validated under steady-state conditions on FR4 PCB with defined mounting conditions. SI4686DY-T1-E3 maintains safe operation within its 150 °C junction limit at this current level when proper heatsinking is applied.

Does SI4686DY-T1-E3 support 4.5 V gate drive in practical applications?

Yes, SI4686DY-T1-E3 is fully characterized for 4.5 V gate drive: R_DS(on) = 14 mΩ (max) at I_D = 11.4 A and V_GS = 4.5 V. Its V_GS(th) range of 1–3 V ensures strong enhancement-mode turn-on with standard logic-level drivers. SI4686DY-T1-E3 delivers predictable performance in 5 V and 3.3 V controller interfaces without requiring level-shifting circuitry.

What is the thermal resistance from junction to ambient for SI4686DY-T1-E3 under typical mounting conditions?

The typical junction-to-ambient thermal resistance (R_thJA) for SI4686DY-T1-E3 is 35 °C/W when mounted on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value assumes standard soldering and no additional heatsink. SI4686DY-T1-E3 achieves this performance via its SO-8 package with four paralleled drain leads and exposed copper pad, enabling efficient heat transfer to PCB copper planes.

Is SI4686DY-T1-E3 suitable for synchronous rectification in buck converters?

Yes, SI4686DY-T1-E3 is explicitly designed for synchronous rectification: its body diode has V_SD = 0.8–1.2 V at I_S = 2.6 A and t_rr = 25–50 ns, enabling low-loss freewheeling with minimal reverse recovery loss. SI4686DY-T1-E3 supports high-frequency operation up to 1 MHz in buck topologies while maintaining low conduction and switching losses.

How does the quad-source/quad-drain configuration of SI4686DY-T1-E3 improve power stage performance?

The quad-source (pins 1–4) and quad-drain (pins 5–8) configuration reduces package parasitic inductance and distributes current across multiple bond wires and leads. This lowers voltage spikes during switching transients, improves current sharing in multiphase layouts, and enhances thermal spreading into the PCB. SI4686DY-T1-E3 leverages this architecture to achieve superior EMI behavior and reliability versus single-terminal SO-8 MOSFETs.

SI4686DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 18.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 13.8A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1220 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 5.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4686DY-T1-E3 FAQ

1.How can I place an order for SI4686DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4686DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4686DY-T1-E3 reliable?

The price and inventory of SI4686DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4686DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4686DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4686DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4686DY-T1-E3?

SI4686DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4686DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4686DY-T1-E3?

For technical support, including SI4686DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4686DY-T1-E3 requirements.

6.How does Aetrix verify that SI4686DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4686DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4686DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4686DY-T1-E3?

All SI4686DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4686DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4686DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4686DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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