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Vishay Siliconix SI4686DY-T1-GE3
- Part No.:
- SI4686DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4686DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 18.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,271
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Product details
Overview
SI4686DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, featuring RDS(on) = 9.5 mΩ at VGS = 10 V, Qg = 9.2 nC (typ.), and 18.2 A continuous drain current at TC = 25 °C. It is optimized for high-side DC/DC conversion in notebook and server power stages.
For engineers reviewing the SI4686DY-T1-GE3 datasheet, SI4686DY-T1-GE3 pinout, SI4686DY-T1-GE3 application, or SI4686DY-T1-GE3 equivalent, key selection criteria include low gate charge for fast switching, halogen-free compliance per IEC 61249-2-21, and verified thermal performance on FR4 boards under steady-state conditions.
Technical Context
This MOSFET employs Vishay's TrenchFET® process with WFET® technology to minimize Qgd, reducing switching losses in synchronous buck converters. Its gate threshold voltage (VGS(th) = 1–3 V) supports 4.5 V and 10 V drive, and its body diode exhibits trr = 25–50 ns with Qrr = 15–30 nC.
The device is characterized for operation from –55 °C to +150 °C junction temperature, with RthJA = 35–42 °C/W (t ≤ 10 s) and RthJF = 20–24 °C/W (steady state). Absolute maximum VDS is 30 V, and VGS rating is ±20 V - enabling robust gate drive margin in high-noise environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient clamping in point-of-load converters. |
| RDS(on) | 9.5 mΩ at VGS = 10 V - Enables <1.5 W conduction loss at 13.8 A, critical for thermally constrained notebook VRMs. |
| Qg | 9.2 nC (VGS = 5 V) - Low total gate charge reduces driver power and enables >1 MHz switching without excessive gate loss. |
| ID (cont.) | 18.2 A at TC = 25 °C - Supports high-current, single-phase high-side switch applications with minimal parallel devices. |
| tr/tf | 16–25 ns / 8–15 ns (VGEN = 10 V) - Fast edge rates minimize overlap loss in synchronous rectification topologies. |
| VSD | 0.8–1.2 V at IS = 2.6 A - Low body diode forward voltage reduces reverse recovery energy during dead-time conduction. |
Pinout & Package
SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1–8 arranged in standard narrow SOIC layout; drain terminals occupy pins 5–8 for low-inductance current path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; accepts 4.5–10 V logic-level drive; requires <1.2 Ω gate resistance to limit ringing per datasheet test conditions. |
| 2 | Source | Power return node; tied to source of synchronous FET or ground reference; forms common node with internal body diode cathode. |
| 3 | Source | Second source connection; paralleled internally with Pin 2 to reduce source inductance in high-di/dt switching. |
| 4 | Drain | High-side output node; electrically connected to exposed pad (Pins 5–8); must be routed with wide copper for thermal and current handling. |
| 5–8 | Drain (exposed pad) | Primary thermal and current path; soldered to PCB thermal pad; contributes >70 % of total heat transfer to board. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Enables 30 V rating with sub-10 mΩ RDS(on) in SO-8 - eliminates need for larger packages or paralleling in space-constrained VRMs. |
| Extremely low Qgd | 2.8 nC (typ.) - minimizes Miller-induced turn-on risk during high dv/dt transitions in synchronous buck high-side operation. |
| 100 % Rg tested | Guarantees gate resistance between 0.8–1.2 Ω - ensures consistent turn-on timing and predictable driver stage loading across production lots. |
| Halogen-free per IEC 61249-2-21 | Meets RoHS-compliant material requirements without compromising thermal or electrical performance - validated for server-grade reliability. |
Applications
| Notebook CPU Voltage Regulator | Server Point-of-Load Converter |
|---|---|
|
Use Scenario: High-efficiency 1–2 phase buck converter supplying 0.8–1.2 V to mobile CPUs at up to 40 A per phase. IC Role / Device Role: High-side synchronous rectifier switch operating at 300–600 kHz with 4.5 V gate drive. Use Value: 9.5 mΩ RDS(on) and 9.2 nC Qg jointly reduce combined conduction and switching losses by ≥18 % vs. legacy 12 mΩ SO-8 MOSFETs. |
Use Scenario: Dual-phase 12 V input → 1.8 V output VRM for Xeon-class processors in 1U rack servers. IC Role / Device Role: High-side switch in interleaved topology with forced-air cooling and thermal pad attachment. Use Value: Exposed drain pad and RthJF = 20 °C/W enable 3.3 W power dissipation at TC = 70 °C - sustaining full 14.5 A rating without derating. |
| Industrial DC/DC Module | Telecom Power Supply |
|
Use Scenario: Compact 24 V input → 5 V isolated auxiliary supply in programmable logic controller (PLC) backplanes. IC Role / Device Role: Primary-side high-side switch in active-clamp forward or half-bridge configuration. Use Value: VGS = ±20 V rating and –55 °C to +150 °C operating range ensure reliable startup and operation across industrial ambient extremes. |
Use Scenario: 48 V intermediate bus → 3.3 V/5 V POL conversion in distributed telecom base station power architecture. IC Role / Device Role: High-side switch in multiphase buck with digital PWM controller and current-mode feedback. Use Value: Low Qrr (15–30 nC) and fast trr (25–50 ns) suppress voltage spikes during light-load discontinuous conduction mode (DCM). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 11 mΩ @ 10 V; Qg = 12.5 nC; TO-252 package; no halogen-free certification. | Higher conduction loss and larger footprint; unsuitable for ultra-thin notebook designs requiring SO-8. | Prefer SI4686DY-T1-GE3 where board area, thermal pad integration, and halogen compliance are mandatory. |
| DMN3026LSD-13 | RDS(on) = 9.0 mΩ @ 10 V; Qg = 10.5 nC; same SO-8; halogen-free; but VGS(th) = 1.2–2.2 V (tighter spec). | Marginally lower RDS(on) but higher Qg; slightly more sensitive to gate drive noise due to narrower VGS(th) distribution. | SI4686DY-T1-GE3 offers better Qg/RDS(on) trade-off and wider VGS(th) tolerance for noisy 5 V control rails. |
Compared with IRF7470PBF and DMN3026LSD-13, SI4686DY-T1-GE3 delivers the lowest Qg × RDS(on) product (87.4 mΩ·nC) among SO-8 30 V N-ch devices, directly translating to higher efficiency in high-frequency, high-current DC/DC stages.
Availability
SI4686DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server point-of-load converters, and industrial DC/DC modules requiring stable component supply, halogen-free compliance, and SO-8 thermal performance.
Supply support for SI4686DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SI4686DY-T1-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-frequency, high-current DC/DC conversion in computing and communications infrastructure where low Qgd and thermal robustness are critical.
FAQ
What is the maximum continuous drain current for SI4686DY-T1-GE3 at 70 °C case temperature?
The SI4686DY-T1-GE3 supports 14.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with the exposed drain pad soldered to a minimum 1" × 1" FR4 copper area, and reflects derating from the 18.2 A value at TC = 25 °C due to thermal resistance limits.
Does SI4686DY-T1-GE3 support 4.5 V gate drive in practical applications?
Yes, SI4686DY-T1-GE3 is fully characterized for 4.5 V gate drive: RDS(on) = 14 mΩ (max) at ID = 11.4 A and VGS = 4.5 V. Its VGS(th) range of 1–3 V ensures reliable enhancement-mode turn-on with standard 5 V logic or PWM controllers, even under worst-case process and temperature variation.
What is the thermal resistance from junction to ambient for SI4686DY-T1-GE3 under transient conditions?
For pulse durations ≤10 s, SI4686DY-T1-GE3 has a typical junction-to-ambient thermal resistance (RthJA) of 35 °C/W, with a maximum of 42 °C/W. This value applies to surface-mounted 1" × 1" FR4 board layouts per the datasheet test condition - not to bare-die or heatsink-mounted configurations.
How does the body diode performance of SI4686DY-T1-GE3 impact synchronous rectifier design?
The SI4686DY-T1-GE3 body diode exhibits VSD = 0.8–1.2 V at IS = 2.6 A and trr = 25–50 ns, with Qrr = 15–30 nC. These values reduce reverse recovery loss and associated voltage overshoot during dead-time conduction, enabling tighter dead-time optimization and improved light-load efficiency in synchronous buck converters.
Is SI4686DY-T1-GE3 pin-compatible with other SO-8 N-channel MOSFETs like Si4800BDY?
No documented pin-to-pin compatibility exists between SI4686DY-T1-GE3 and Si4800BDY. While both use SO-8 packages, their pin assignments differ: SI4686DY-T1-GE3 uses Pins 1–4 for G-S-S-D and Pins 5–8 for drain; Si4800BDY uses a dual-drain configuration with different internal connectivity. Layout reuse is not recommended without verification against each device's mechanical drawing and thermal pad layout.
SI4686DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®, WFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 18.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 13.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1220 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 5.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4686DY-T1-GE3 FAQ
1.How can I place an order for SI4686DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4686DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4686DY-T1-GE3 reliable?
The price and inventory of SI4686DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4686DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4686DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4686DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4686DY-T1-GE3?
SI4686DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4686DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4686DY-T1-GE3?
For technical support, including SI4686DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4686DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4686DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4686DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4686DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4686DY-T1-GE3?
All SI4686DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4686DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4686DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4686DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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