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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4688DY-T1-E3

Name: SI4688DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4688DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4688DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4688DY-T1-E3.pdf

Description:: MOSFET N-CH 30V 8.9A 8SO

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Product details

Overview

SI4688DY-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, delivering R_DS(on) = 0.011 Ω at V_GS = 10 V and 12 A continuous drain current at T_A = 25 °C. It supports notebook PC core and system power rails with 100 % UIS and R_g tested reliability.

For engineers reviewing the SI4688DY-T1-E3 datasheet, SI4688DY-T1-E3 pinout, SI4688DY-T1-E3 application, or SI4688DY-T1-E3 equivalent, key selection criteria include its 30-V V_DS, low 0.011-Ω on-resistance at 10 V drive, SO-8 thermal performance (R_thJA = 73 °C/W steady-state), 100 % avalanche-tested ruggedness, and Pb-free/halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for high-current, low-voltage switching in synchronous buck converters and load switches. Its gate threshold voltage (1.0–3.0 V) enables 4.5-V logic-level drive compatibility while maintaining tight R_DS(on) distribution (0.012–0.0145 Ω at V_GS = 4.5 V, I_D = 9.8 A).

The device features integrated body diode with V_SD = 0.76–1.1 V at I_S = 2.3 A and exhibits C_iss = 1580 pF, Q_g = 25.4–38 nC (at V_GS = 10 V), supporting efficient high-frequency PWM operation up to several hundred kHz in DC/DC regulation stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24-V input rail and transient suppression in notebook power stages
R_DS(on) @ 10 V	0.011 Ω - Enables ≤1.32 W conduction loss at 12 A, critical for thermally constrained laptop PCBs
I_D (T_A = 25 °C)	12 A - Continuous output current capability without forced airflow on 1" × 1" FR4 board
Q_g @ 10 V	25.4–38 nC - Determines gate driver strength requirement for <20 ns turn-on delay in high-efficiency converters
R_thJA (steady-state)	73–90 °C/W - Defines thermal derating slope: ~1.6 W max power at 70 °C ambient
V_GS(th)	1.0–3.0 V - Ensures reliable enhancement-mode turn-on with standard 3.3-V or 5-V control signals
E_AS	20 mJ - Single-pulse avalanche energy rating confirms robustness against inductive switching stress

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation; standardized footprint compatible with JEDEC MS-012AC.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally connected to exposed thermal pad - primary current path and heat sink interface
5	Gate (G)	Control terminal requiring ≤20 V drive; 0.9–2.7 Ω internal gate resistance limits ringing
Source (S)	Source (S)	Pin 5 is gate; source is pins 1–4 & 6–8 tied to common ground plane via PCB copper pour

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for compact 2-layer PCB layouts in space-constrained notebooks
100 % UIS tested	Guarantees single-pulse avalanche survivability up to 20 mJ - eliminates need for external snubbers in synchronous rectifier designs
Halogen-free construction	Meets IEC 61249-2-21 for RoHS-compliant, environmentally sustainable manufacturing and end-of-life processing
100 % R_g tested	Ensures consistent gate charge profile and switching timing across production lots - critical for multi-phase VRM stability

Applications

Notebook Core Voltage Regulator	Notebook System Power Switch
Use Scenario: High-efficiency 1–2 V, 10–15 A CPU/GPU core supply using multiphase buck converter. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz PWM frequency with 10-V gate drive. Use Value: 0.011 Ω R_DS(on) minimizes conduction loss and junction temperature rise under full load, extending battery runtime.	Use Scenario: 5-V or 12-V system rail hot-swap or power sequencing control in ultrabook mainboard. IC Role / Device Role / Timing Role: Low-side load switch enabling controlled inrush current and fault isolation. Use Value: 12 A continuous rating and 40 A pulsed capability support peak loads during SSD spin-up or USB-C PD negotiation.
Notebook Battery Protection Circuit	Industrial DC Load Switch
Use Scenario: Secondary overcurrent protection between battery pack and system PMIC in Li-ion-powered laptops. IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch providing bidirectional current limiting and short-circuit shutdown. Use Value: 30-V V_DS withstands battery pack open-circuit voltage (up to 12.6 V) plus transients, ensuring long-term reliability.	Use Scenario: Remote-controlled 24-V DC load switching in factory automation I/O modules. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in PLC output stages. Use Value: SO-8 footprint and 0.0145 Ω R_DS(on) at 4.5 V enable direct microcontroller GPIO drive without level-shifting, reducing BOM count.

Notebook Core Voltage Regulator

Notebook System Power Switch

Use Scenario: High-efficiency 1–2 V, 10–15 A CPU/GPU core supply using multiphase buck converter.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz PWM frequency with 10-V gate drive.

Use Value: 0.011 Ω R_DS(on) minimizes conduction loss and junction temperature rise under full load, extending battery runtime.

Use Scenario: 5-V or 12-V system rail hot-swap or power sequencing control in ultrabook mainboard.

IC Role / Device Role / Timing Role: Low-side load switch enabling controlled inrush current and fault isolation.

Use Value: 12 A continuous rating and 40 A pulsed capability support peak loads during SSD spin-up or USB-C PD negotiation.

Notebook Battery Protection Circuit

Industrial DC Load Switch

Use Scenario: Secondary overcurrent protection between battery pack and system PMIC in Li-ion-powered laptops.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch providing bidirectional current limiting and short-circuit shutdown.

Use Value: 30-V V_DS withstands battery pack open-circuit voltage (up to 12.6 V) plus transients, ensuring long-term reliability.

Use Scenario: Remote-controlled 24-V DC load switching in factory automation I/O modules.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in PLC output stages.

Use Value: SO-8 footprint and 0.0145 Ω R_DS(on) at 4.5 V enable direct microcontroller GPIO drive without level-shifting, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.012 Ω @ 10 V; higher Q_g = 42 nC; TO-252 package	Larger footprint and higher gate drive demand; better suited for lower-frequency, higher-current industrial SMPS	Prefer SI4688DY-T1-E3 for space-constrained, high-frequency notebook VRMs where SO-8 thermal density matters
DMN3025LSD-13	R_DS(on) = 0.0135 Ω @ 10 V; dual-N configuration in SO-8; no UIS rating specified	Offers channel redundancy but lacks avalanche testing - unsuitable for unclamped inductive loads	Select SI4688DY-T1-E3 when single-channel ruggedness and guaranteed UIS performance are required in critical power paths

Compared with IRF7470PBF and DMN3025LSD-13, SI4688DY-T1-E3 provides superior thermal density in SO-8, verified UIS robustness, and tighter R_DS(on) tolerance - making it optimal for high-reliability, high-frequency notebook power delivery where layout area and transient immunity are design constraints.

Availability

SI4688DY-T1-E3 is available at Aetrix Electronics and suitable for notebook PC core regulators, system power switches, and battery protection circuits requiring stable component supply, Pb-free compliance, and high-volume manufacturability.

Supply support for SI4688DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The Si4688DY product line targets high-current, low-voltage DC/DC conversion in portable computing - engineered for minimal conduction loss, fast switching, and rugged avalanche performance in thermally dense environments.

FAQ

What is the maximum continuous drain current for SI4688DY-T1-E3 at 70 °C ambient temperature?

The SI4688DY-T1-E3 supports 7.1 A continuous drain current at T_A = 70 °C with no heatsink, based on its 1.4 W maximum power dissipation and 90 °C/W worst-case junction-to-ambient thermal resistance. This rating assumes mounting on a 1" × 1" FR4 board per Vishay's test condition. Derating must be applied above 70 °C ambient to maintain T_J ≤ 150 °C. The SI4688DY-T1-E3 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)".

Does SI4688DY-T1-E3 have a specified avalanche energy rating?

Yes, the SI4688DY-T1-E3 has a rated single-pulse avalanche energy (E_AS) of 20 mJ, measured with L = 0.1 mH and I_AS = 20 A. This rating is guaranteed by 100 % UIS (Unclamped Inductive Switching) testing per Vishay's quality protocol. The SI4688DY-T1-E3 is therefore suitable for applications involving inductive loads without external clamping, such as synchronous rectifiers in buck converters where voltage overshoot may occur during turn-off.

Is SI4688DY-T1-E3 compatible with 4.5-V gate drive in logic-level applications?

Yes, the SI4688DY-T1-E3 is fully compatible with 4.5-V gate drive: its R_DS(on) is specified as 0.012–0.0145 Ω at V_GS = 4.5 V and I_D = 9.8 A, confirming strong enhancement-mode behavior well within logic-level control ranges. The gate threshold voltage (V_GS(th)) spans 1.0–3.0 V, ensuring reliable turn-on with standard 3.3-V or 4.5-V microcontroller outputs. This makes the SI4688DY-T1-E3 ideal for direct GPIO-driven load switches in modern notebook platforms.

What is the thermal resistance from junction to foot (R_thJF) for SI4688DY-T1-E3?

The SI4688DY-T1-E3 has a maximum junction-to-foot (drain) thermal resistance (R_thJF) of 25 °C/W under steady-state conditions, with a typical value of 19 °C/W. This parameter reflects heat transfer from the silicon die directly into the exposed drain pad and underlying PCB copper, independent of ambient convection. It is critical for estimating local hotspot temperature rise in high-current traces and informs thermal pad design rules for the SI4688DY-T1-E3's SO-8 footprint.

How does the halogen-free status of SI4688DY-T1-E3 align with environmental compliance standards?

The SI4688DY-T1-E3 is certified halogen-free per IEC 61249-2-21, meaning total bromine and chlorine content is below 900 ppm each, and total halogens ≤ 1500 ppm. Combined with its Pb-free terminations, this ensures full compliance with RoHS Directive 2011/65/EU and supports green manufacturing initiatives. Vishay documents this status explicitly in the ordering information and features list for the SI4688DY-T1-E3, confirming suitability for export-controlled and eco-conscious electronics programs.

SI4688DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1580 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4688DY-T1-E3 FAQ

1.How can I place an order for SI4688DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4688DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4688DY-T1-E3 reliable?

The price and inventory of SI4688DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4688DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4688DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4688DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4688DY-T1-E3?

SI4688DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4688DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4688DY-T1-E3?

For technical support, including SI4688DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4688DY-T1-E3 requirements.

6.How does Aetrix verify that SI4688DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4688DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4688DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4688DY-T1-E3?

All SI4688DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4688DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4688DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4688DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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