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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4688DY-T1-GE3

Name: SI4688DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4688DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4688DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4688DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 8.9A 8SO

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Product details

Overview

SI4688DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, with R_DS(on) = 0.011 Ω at V_GS = 10 V and 12 A continuous drain current at T_A = 25 °C. It supports notebook PC core and system power rails requiring low conduction loss and robust avalanche capability.

For engineers reviewing the SI4688DY-T1-GE3 datasheet, SI4688DY-T1-GE3 pinout, SI4688DY-T1-GE3 application, or SI4688DY-T1-GE3 equivalent, key selection criteria include its 30-V V_DS, 0.0145 Ω R_DS(on) at 4.5 V drive, 100 % UIS-tested ruggedness, SO-8 thermal performance (R_thJA = 73 °C/W steady-state), and halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge (Q_g = 25.4 nC typical at 10 V). Its 100 % UIS testing ensures reliable operation under inductive load switching stress.

The device features a built-in body diode with V_SD = 0.76 V typical at I_S = 2.3 A and exhibits stable threshold voltage (V_GS(th) = 1.0–3.0 V) across -55 to 150 °C junction temperature range, supporting thermally demanding notebook power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 3.3 V/5 V/12 V system rail switching
R_DS(on) @ V_GS = 10 V	0.011 Ω - Enables ≤1.32 W conduction loss at 12 A DC load
R_DS(on) @ V_GS = 4.5 V	0.0145 Ω - Supports logic-level gate drive in battery-powered systems
I_D (continuous, T_A = 25 °C)	12 A - Sustains full-core CPU power delivery on FR4 PCB without forced cooling
E_AS	20 mJ - Withstands single-pulse inductive energy in synchronous buck output stage
Q_g @ V_GS = 10 V	25.4 nC - Determines gate driver current requirement for <50 ns turn-off delay
R_thJA (steady-state)	73 °C/W - Limits junction rise to ~90 °C at 1.4 W dissipation in standard layout

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal conduction. Pin 1–8 arranged in dual-row configuration with G–D–S–D–S–D–S–D topology as confirmed in Vishay Document 69996 Rev. B top-view diagram.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; accepts 0–20 V V_GS; requires <2.7 Ω series resistance to damp ringing
2, 3, 4, 6, 7, 8	Drain	High-side switch node; all six pins internally connected to die drain and exposed pad
5	Source	Power return path; referenced to gate drive ground; connects to PCB source plane

Key Features

Feature	Design Value
TrenchFET® construction	Delivers industry-leading R_DS(on) × area efficiency for compact DC-DC power stages
100 % UIS tested	Guarantees single-pulse avalanche survivability up to 20 mJ without derating
Halogen-free per IEC 61249-2-21	Meets RoHS-compliant manufacturing and end-of-life material recovery requirements
Exposed drain pad	Reduces R_thJF to 19 °C/W, enabling higher power density in thermally constrained notebooks

Applications

Notebook Core Voltage Regulator	Notebook System Power Rail
Use Scenario: High-efficiency 1–2 V/10–15 A CPU core supply using synchronous buck topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase VRM. Use Value: 0.0145 Ω R_DS(on) at 4.5 V enables >92 % efficiency at 12 A while minimizing board area vs. discrete alternatives.	Use Scenario: 5 V or 12 V system bus converter delivering up to 8 A to chipset, display, and peripherals. IC Role / Device Role / Timing Role: Primary high-current switch in non-isolated step-down regulator. Use Value: 12 A continuous rating and 40 A pulsed capability support peak load transients without thermal throttling.
USB-C PD Power Path	Embedded Controller Power Switch
Use Scenario: Input power path management in portable devices accepting 20 V USB-C PD input. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protection switch upstream of buck converter. Use Value: 30 V V_DS margin accommodates 20 V PD + 20 % tolerance; 100 % UIS ensures fault resilience during hot-plug events.	Use Scenario: Controlled power enable for microcontroller, PMIC, or sensor subsystems in industrial handhelds. IC Role / Device Role / Timing Role: Load switch with controlled slew rate and low quiescent current. Use Value: Gate threshold (1.0–3.0 V) allows direct GPIO control; 1 µA I_DSS minimizes standby leakage in battery-critical designs.

Notebook Core Voltage Regulator

Notebook System Power Rail

Use Scenario: High-efficiency 1–2 V/10–15 A CPU core supply using synchronous buck topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase VRM.

Use Value: 0.0145 Ω R_DS(on) at 4.5 V enables >92 % efficiency at 12 A while minimizing board area vs. discrete alternatives.

Use Scenario: 5 V or 12 V system bus converter delivering up to 8 A to chipset, display, and peripherals.

IC Role / Device Role / Timing Role: Primary high-current switch in non-isolated step-down regulator.

Use Value: 12 A continuous rating and 40 A pulsed capability support peak load transients without thermal throttling.

USB-C PD Power Path

Embedded Controller Power Switch

Use Scenario: Input power path management in portable devices accepting 20 V USB-C PD input.

IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protection switch upstream of buck converter.

Use Value: 30 V V_DS margin accommodates 20 V PD + 20 % tolerance; 100 % UIS ensures fault resilience during hot-plug events.

Use Scenario: Controlled power enable for microcontroller, PMIC, or sensor subsystems in industrial handhelds.

IC Role / Device Role / Timing Role: Load switch with controlled slew rate and low quiescent current.

Use Value: Gate threshold (1.0–3.0 V) allows direct GPIO control; 1 µA I_DSS minimizes standby leakage in battery-critical designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 0.022 Ω @ 4.5 V; SO-8 but lower current rating (4.3 A)	Better suited for low-power peripheral rails, not core CPU loads	Select when board space is critical and I_D ≤ 4.3 A; avoid for ≥8 A system rails
DMN3028LSD-13	R_DS(on) = 0.017 Ω @ 4.5 V; dual-N in SO-8, 6.5 A per channel	Offers integrated dual-switch topology for compact dual-rail designs	Choose for space-constrained dual-output converters where channel matching matters

Compared with IRLML6344TRPBF and DMN3028LSD-13, SI4688DY-T1-GE3 delivers superior current handling (12 A) and lower on-resistance at logic-level drive, making it optimal for high-density notebook core regulators where thermal headroom and conduction loss are limiting factors.

Availability

SI4688DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC core regulation, system power rail conversion, and USB-C PD power path management requiring stable component supply and halogen-free compliance.

Supply support for SI4688DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si4688DY product line targets high-current, low-voltage DC-DC conversion in portable computing, delivering optimized R_DS(on)-to-thermal-resistance trade-offs for thermally dense applications.

FAQ

What is the maximum continuous drain current for SI4688DY-T1-GE3 at 70 °C ambient?

The SI4688DY-T1-GE3 supports 7.1 A continuous drain current at T_A = 70 °C with no heatsink, based on its 1.4 W maximum power dissipation and 90 °C/W junction-to-ambient thermal resistance under steady-state conditions. This rating assumes mounting on a 1" × 1" FR4 board per Vishay Document 69996.

Does SI4688DY-T1-GE3 have a specified gate resistance value?

Yes, SI4688DY-T1-GE3 has a typical gate resistance (R_g) of 1.8 Ω, with minimum and maximum values of 0.9 Ω and 2.7 Ω respectively. This parameter is measured per the test conditions in Vishay Document 69996 and directly impacts gate drive loop stability and switching speed.

Is SI4688DY-T1-GE3 suitable for synchronous rectification in a 30 V input buck converter?

Yes, SI4688DY-T1-GE3 is suitable for synchronous rectification in 30 V input buck converters due to its 30 V V_DS rating, low R_DS(on) (0.011 Ω at 10 V), and 100 % UIS testing. Its body diode forward voltage (V_SD = 0.76 V typical) also supports efficient freewheeling during dead-time intervals in the SI4688DY-T1-GE3-based design.

What is the safe operating area (SOA) limitation for SI4688DY-T1-GE3 at DC operation?

At DC operation and T_A = 25 °C, the SI4688DY-T1-GE3 SOA is limited by R_DS(on) to approximately 12 A at 2.5 V V_DS, per the SOA curve in Vishay Document 69996. This corresponds to the device's 2.5 W P_D rating and defines the maximum sustainable linear-mode power dissipation without thermal runaway.

How does the thermal performance of SI4688DY-T1-GE3 compare between junction-to-ambient and junction-to-foot?

SI4688DY-T1-GE3 has a steady-state R_thJA of 73 °C/W and R_thJF of 19 °C/W, indicating that heat flows more efficiently to the PCB foot (drain pad) than to ambient air. This makes thermal vias under the exposed drain pad essential for achieving rated current in production layouts - a design consideration explicitly validated for the SI4688DY-T1-GE3 in Vishay's thermal characterization.

SI4688DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1580 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4688DY-T1-GE3 FAQ

1.How can I place an order for SI4688DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4688DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4688DY-T1-GE3 reliable?

The price and inventory of SI4688DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4688DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4688DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4688DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4688DY-T1-GE3?

SI4688DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4688DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4688DY-T1-GE3?

For technical support, including SI4688DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4688DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4688DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4688DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4688DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4688DY-T1-GE3?

All SI4688DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4688DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4688DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4688DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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