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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4712DY-T1-GE3

Name: SI4712DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4712DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4712DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4712DY-T1-GE3.pdf

Description:: MOSFET N-CH 30V 14.6A 8SO

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Product details

Overview

SI4712DY-T1-GE3 from Vishay Siliconix is an N-channel 30-V trench MOSFET with integrated Schottky diode in SO-8 package, delivering R_DS(on) = 0.013 Ω at V_GS = 10 V, 14.6 A continuous drain current, and 8.3 nC total gate charge - optimized for low-side notebook system power switching.

For engineers reviewing the SI4712DY-T1-GE3 datasheet, SI4712DY-T1-GE3 pinout, SI4712DY-T1-GE3 application, or SI4712DY-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET® integration, 100% UIS testing, halogen-free RoHS compliance, and thermal resistance R_thJA = 50 °C/W under standard mounting.

Technical Context

This device integrates a trench-based power MOSFET and Schottky diode on a single die, enabling synchronous rectification and body-diode bypass in compact DC-DC converters. Its gate threshold voltage (1.2–2.5 V) supports logic-level drive, while R_DS(on) remains stable across V_GS = 4.5–10 V, ensuring robust conduction in battery-powered systems.

The SO-8 package provides dual-source/drain terminals per channel (pins 1–3 and 5–7), supporting high-current routing with low-inductance layout. Thermal performance is characterized by R_thJF = 25 °C/W (junction-to-foot) and R_thJA = 50 °C/W (junction-to-ambient), validated on 1" × 1" FR4 board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 5–12 V input rail applications
R_DS(on)	0.013 Ω @ V_GS = 10 V - Enables ≤1.5 W conduction loss at 12.9 A
I_D (continuous)	14.6 A @ T_C = 25 °C - Supports high-current notebook CPU/GPU VRMs
Q_g	8.3 nC @ V_GS = 4.5 V - Low gate drive energy for efficient 3.3/5 V controller interfacing
V_SD	0.48–0.65 V @ I_S = 1 A - Schottky forward drop reduces reverse-recovery losses vs. standard body diode
t_rr	17–34 ns - Fast recovery enables >1 MHz switching without excessive diode loss
R_thJA	50 °C/W - Thermal limit defines max 2.5 W ambient-power dissipation on standard PCB

Pinout & Package

SO-8 narrow-body package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm height, with exposed drain pad (pin 4) for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal MOSFET and Schottky cathode
4	Drain (Foot)	Exposed thermal pad - must be soldered to PCB ground plane for R_thJF = 25 °C/W
5, 6, 7	Drain	Parallel drain terminals - reduce current density and trace inductance
8	Gate	Control terminal - requires <2.5 V_GS(th) for turn-on; 100% R_g tested

Key Features

Feature	Design Value
SkyFET® Monolithic Integration	Single-die co-location of MOSFET + Schottky eliminates interconnect parasitics and improves EMI performance
100% UIS Tested	Guarantees ruggedness against inductive switching stress in notebook VRM output stages
Halogen-Free & RoHS Compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - suitable for consumer laptop manufacturing
Low Q_gd/Q_g Ratio	2.0/8.3 nC = 0.24 - minimizes Miller effect, enabling stable high-speed switching with minimal gate oscillation
Normalized R_DS(on) Stability	≤1.8× increase from –55 °C to 125 °C - ensures predictable conduction loss across notebook operating range

Applications

Notebook CPU VRM Low-Side Switch	GPU Power Delivery Module
Use Scenario: High-efficiency buck converter output stage in ultrabook platforms with 1–2 V output, 15–30 A load. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing external Schottky diode. Use Value: 0.48 V Schottky forward drop cuts conduction loss by ~40% vs. standard MOSFET body diode at 10 A.	Use Scenario: Dual-phase GPU core supply in gaming laptops requiring fast transient response and thermal headroom. IC Role / Device Role / Timing Role: Primary low-side switch in interleaved buck topology with 500 kHz–1 MHz switching. Use Value: 17 ns body diode t_rr prevents shoot-through during dead-time and reduces switching loss by 12% vs. comparable discrete solutions.
USB-C PD Sink Power Path	Embedded Controller Power Rail
Use Scenario: Input-side protection and regulation for 20 V/5 A USB-C PD sink circuits in portable workstations. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected low-side switch in power path management. Use Value: 30 V V_DS rating safely handles 20 V PD input with margin; 100% UIS test ensures survivability during hot-plug transients.	Use Scenario: Always-on 3.3 V rail for embedded controllers managing battery charging and thermal monitoring. IC Role / Device Role / Timing Role: Load switch enabling controlled power-up sequencing and fault isolation. Use Value: 1.2 V V_GS(th) minimum allows direct drive from 3.3 V microcontroller GPIO without level-shifting.

Notebook CPU VRM Low-Side Switch

GPU Power Delivery Module

Use Scenario: High-efficiency buck converter output stage in ultrabook platforms with 1–2 V output, 15–30 A load.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing external Schottky diode.

Use Value: 0.48 V Schottky forward drop cuts conduction loss by ~40% vs. standard MOSFET body diode at 10 A.

Use Scenario: Dual-phase GPU core supply in gaming laptops requiring fast transient response and thermal headroom.

IC Role / Device Role / Timing Role: Primary low-side switch in interleaved buck topology with 500 kHz–1 MHz switching.

Use Value: 17 ns body diode t_rr prevents shoot-through during dead-time and reduces switching loss by 12% vs. comparable discrete solutions.

USB-C PD Sink Power Path

Embedded Controller Power Rail

Use Scenario: Input-side protection and regulation for 20 V/5 A USB-C PD sink circuits in portable workstations.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected low-side switch in power path management.

Use Value: 30 V V_DS rating safely handles 20 V PD input with margin; 100% UIS test ensures survivability during hot-plug transients.

Use Scenario: Always-on 3.3 V rail for embedded controllers managing battery charging and thermal monitoring.

IC Role / Device Role / Timing Role: Load switch enabling controlled power-up sequencing and fault isolation.

Use Value: 1.2 V V_GS(th) minimum allows direct drive from 3.3 V microcontroller GPIO without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	30 V, R_DS(on) = 0.0095 Ω @ 10 V, SO-8, but no integrated Schottky diode	Lacks monolithic Schottky - requires external diode for synchronous rectification	Choose when lower R_DS(on) is critical and board space allows discrete diode placement
IRF7759L2TRPBF	30 V, R_DS(on) = 0.0125 Ω @ 10 V, SO-8, integrated Schottky, but higher Q_g = 14.2 nC	Higher gate charge increases driver loss and limits max switching frequency to ~750 kHz	Choose when thermal design prioritizes R_thJA = 40 °C/W over gate drive efficiency

Compared with Si7850DP-T1-GE3 and IRF7759L2TRPBF, SI4712DY-T1-GE3 uniquely balances low Q_g (8.3 nC), monolithic Schottky integration, and 100% UIS validation - making it optimal for high-frequency, space-constrained notebook VRMs where diode recovery and gate drive loss are co-critical.

Availability

SI4712DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook system power, GPU VRMs, and USB-C PD sink applications requiring stable component supply, full RoHS/halogen-free compliance, and verified UIS ruggedness.

Supply support for SI4712DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures high-performance discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI4712DY-T1-GE3 belongs to Vishay's SkyFET® monolithic trench MOSFET family, engineered specifically for high-density, high-efficiency DC-DC conversion in portable computing and mobile power systems.

FAQ

What is the maximum continuous drain current rating for SI4712DY-T1-GE3 at 70 °C case temperature?

The SI4712DY-T1-GE3 supports 11.6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under typical PCB copper area; actual current capability depends on heatsinking and airflow. The SI4712DY-T1-GE3 datasheet confirms this value is measured on a 1" × 1" FR4 board with 2 oz copper.

Does SI4712DY-T1-GE3 include a Schottky diode, and how is it connected internally?

Yes, the SI4712DY-T1-GE3 integrates a monolithic Schottky diode with its MOSFET in a single die. The Schottky anode connects to the drain, and the cathode connects to the source - matching the polarity of the intrinsic body diode but with lower forward voltage (0.48–0.65 V) and faster recovery (17–34 ns). This configuration is confirmed in the device schematic and "Source-Drain Diode" section of the SI4712DY-T1-GE3 datasheet.

What is the gate threshold voltage range for SI4712DY-T1-GE3, and does it support 3.3 V logic-level drive?

The SI4712DY-T1-GE3 has a gate threshold voltage range of 1.2 V to 2.5 V at I_D = 1 mA, enabling reliable turn-on with 3.3 V logic-level gate drive. At V_GS = 4.5 V, it delivers R_DS(on) = 0.0165 Ω - confirming strong enhancement-mode operation. This behavior is documented in the SI4712DY-T1-GE3 specifications table under "Gate-Source Threshold Voltage".

How is thermal performance characterized for SI4712DY-T1-GE3, and what is the junction-to-foot resistance?

The SI4712DY-T1-GE3 specifies R_thJF = 25 °C/W (max) for junction-to-foot (drain pad) under steady-state conditions, enabling direct thermal coupling to PCB ground planes. This value is distinct from R_thJA = 50 °C/W (max), which applies to junction-to-ambient on standard FR4. Both values are measured per JEDEC JESD51-2 and published in the SI4712DY-T1-GE3 thermal resistance ratings table.

Is SI4712DY-T1-GE3 suitable for synchronous rectification in a 1 MHz buck converter?

Yes, the SI4712DY-T1-GE3 supports synchronous rectification up to 1 MHz due to its 17 ns body diode reverse recovery time (t_rr) and low Q_gd/Q_g ratio of 0.24 - minimizing Miller-induced switching delay and oscillation. The SI4712DY-T1-GE3 dynamic parameters (t_d(on), t_r, t_d(off), t_f) are validated at 10 V and 4.5 V gate drive, confirming usability in high-frequency VRMs.

SI4712DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: SkyFET®, TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1084 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4712DY-T1-GE3 FAQ

1.How can I place an order for SI4712DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4712DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4712DY-T1-GE3 reliable?

The price and inventory of SI4712DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4712DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4712DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4712DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4712DY-T1-GE3?

SI4712DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4712DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4712DY-T1-GE3?

For technical support, including SI4712DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4712DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4712DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4712DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4712DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4712DY-T1-GE3?

All SI4712DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4712DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4712DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4712DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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