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Vishay Siliconix SI4752DY-T1-GE3
- Part No.:
- SI4752DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4752DY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 25A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,002
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Product details
Overview
SI4752DY-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) MOSFET with integrated Schottky diode in SO-8 package, delivering 25 A continuous drain current at TC = 25 °C, RDS(on) = 0.0055 Ω at VGS = 10 V, and 13.8 nC total gate charge. It serves as a synchronous rectifier switch in notebook PC system power and VRM/POL applications.
For engineers reviewing the SI4752DY-T1-GE3 datasheet, SI4752DY-T1-GE3 pinout, SI4752DY-T1-GE3 application, or SI4752DY-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET® trench structure, 0.46 V body diode forward voltage at 3 A, and 23 ns reverse recovery time - critical for high-efficiency DC-DC conversion design validation.
Technical Context
This device integrates a low-RDS(on) N-channel power MOSFET and a co-packaged Schottky diode in a single SO-8 footprint, enabling synchronous rectification without external diode placement. Its 30 V VDS, ±20 V VGS, and 150 °C maximum junction temperature support operation in compact, thermally constrained power stages.
The MOSFET features 100 % Rg and UIS testing, with dynamic parameters including Ciss = 1700 pF, Coss = 410 pF, and Qgd = 3.8 nC - directly influencing switching loss and gate drive sizing in high-frequency (>300 kHz) buck converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V–24 V input DC-DC stages. |
| RDS(on) | 0.0055 Ω at VGS = 10 V - Enables ≤1.4 W conduction loss at 10 A, critical for thermal management in space-constrained notebook VRMs. |
| ID (continuous) | 25 A at TC = 25 °C - Supports high-current POL outputs up to ~50 W with appropriate PCB copper area. |
| Qg | 13.8 nC at VGS = 4.5 V - Determines gate driver current requirement and switching speed in 4.5 V logic-level control systems. |
| VSD | 0.46 V at IS = 3 A - Low forward voltage of integrated Schottky reduces reverse conduction loss during dead-time in synchronous rectifiers. |
| trr | 23 ns - Fast body diode recovery minimizes shoot-through risk and improves efficiency in hard-switched topologies. |
| TJ(max) | 150 °C - Specifies maximum junction temperature for reliability modeling and derating curves in thermal design. |
Pinout & Package
SO-8 surface-mount package with exposed drain pad for thermal enhancement; 8-pin layout optimized for dual-function integration (MOSFET + Schottky).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal for MOSFET channel; requires 10 V or 4.5 V logic-level drive depending on RDS(on) target. |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to power ground in synchronous rectifier configuration. |
| 3 (D) | Drain | Main current path output; electrically and thermally connected to exposed pad for low RthJF (16 °C/W typical). |
| 4 (S) | Source | Second source connection - paralleled with Pin 2 to reduce source inductance and improve current sharing. |
| 5 (D) | Drain | Second drain connection - paralleled with Pin 3 and exposed pad to minimize drain loop inductance in high-dI/dt switching. |
| 6 (S) | Source | Third source connection - further lowers source impedance and enhances thermal coupling to PCB copper. |
| 7 (D) | Drain | Third drain connection - supports high-current routing while maintaining symmetry in SO-8 layout. |
| 8 (D) | Drain | Fourth drain connection - completes multi-drain topology for optimal current distribution and thermal spreading. |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® Monolithic Integration | Single-die co-integration of trench MOSFET and Schottky diode eliminates interconnect parasitics and ensures matched thermal behavior. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for notebook PC and server end-equipment compliance. |
| 100 % Rg and UIS Tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress in real-world POL loads. |
| Low Qgd/Qg Ratio | 3.8 nC / 13.8 nC ≈ 0.275 - enables clean Miller plateau transition and reduces risk of false turn-on in high-dV/dt environments. |
| Exposed Drain Pad | Thermal resistance RthJF = 16 °C/W (typ.) - allows direct heat transfer to inner-layer copper planes, improving power density. |
Applications
| Notebook PC System Power | VRM / POL Converter |
|---|---|
Use Scenario: High-efficiency 5 V or 3.3 V rail generation in ultrathin notebooks with strict thermal envelope limits. IC Role / Device Role: Synchronous rectifier switch replacing discrete Schottky diode in buck converter secondary side. Use Value: 0.46 V VSD and 23 ns trr reduce conduction and recovery losses, enabling >92 % efficiency at 15 A load. |
Use Scenario: Point-of-load regulation for CPU/GPU core voltage in servers and workstations requiring fast transient response. IC Role / Device Role: Low-RDS(on) high-current switch in multiphase buck stages with 4.5 V gate drive compatibility. Use Value: 0.0055 Ω RDS(on) at 10 V and 25 A rating allow compact 2-phase designs without forced air cooling. |
| Synchronous Rectifier Switch | DC-DC Secondary Side Switch |
Use Scenario: Secondary-side switching in isolated DC-DC converters (e.g., forward, active clamp flyback) where body diode conduction must be minimized. IC Role / Device Role: Integrated MOSFET + Schottky replaces two discrete components while maintaining independent control of conduction path. Use Value: Monolithic integration ensures matched VF and trr between diode and MOSFET, eliminating timing mismatch issues in synchronous gate timing. |
Use Scenario: Secondary-side switch in telecom and industrial 48 V input DC-DC modules requiring high reliability and low EMI. IC Role / Device Role: High-current, low-loss switch handling up to 21 A at 4.5 V gate drive in thermally dense modules. Use Value: 0.0076 Ω RDS(on) at VGS = 4.5 V enables efficient operation with standard PWM controller outputs, reducing gate driver complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | Higher RDS(on) = 0.0085 Ω at VGS = 10 V; same SO-8 package and 30 V rating. | Lower current capability (20 A vs. 25 A); suited for lower-power VRMs where thermal margin is less constrained. | Select when board space is identical but peak current demand is ≤20 A and cost optimization is prioritized. |
| IRF7759L2TRPBF | 30 V rating, RDS(on) = 0.0052 Ω at VGS = 10 V, but no integrated Schottky diode - requires external diode placement. | Lacks monolithic diode integration; increases layout complexity and parasitic inductance in synchronous rectifier layouts. | Choose only if discrete diode selection is preferred for tuning recovery characteristics or if existing layout accommodates separate diode placement. |
Compared with SI4752DY-T1-GE3, Si7852DP-T1-GE3 trades 20 % higher conduction loss for lower unit cost in thermally relaxed designs, while IRF7759L2TRPBF offers marginally lower RDS(on) but forfeits the thermal and layout advantages of monolithic Schottky integration.
Availability
SI4752DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC system power, VRM/POL converter design, and synchronous rectifier switch applications requiring stable component supply, long-term lifecycle assurance, and lead-free/halogen-free compliance.
Supply support for SI4752DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SI4752DY-T1-GE3 belongs to Vishay's SkyFET® monolithic trench MOSFET + Schottky family, engineered specifically for high-density, high-efficiency DC-DC conversion in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current rating for SI4752DY-T1-GE3 at 70 °C case temperature?
The SI4752DY-T1-GE3 supports 20 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under sustained high-temperature operation and must be validated against actual PCB thermal design using the provided RthJA and RthJF data for SI4752DY-T1-GE3.
Does SI4752DY-T1-GE3 include a Schottky diode, and how is it connected internally?
Yes, SI4752DY-T1-GE3 integrates a Schottky diode monolithically with the N-channel MOSFET. The diode is connected anode-to-source and cathode-to-drain - forming a body-diode parallel path that enables synchronous rectification without external components. Its VSD = 0.46 V at 3 A and trr = 23 ns are measured per the SI4752DY-T1-GE3 datasheet.
What is the gate threshold voltage range for SI4752DY-T1-GE3, and is it compatible with 4.5 V logic-level drive?
The SI4752DY-T1-GE3 has a gate threshold voltage VGS(th) of 1.0 V to 2.2 V, ensuring reliable turn-on with 4.5 V gate drive. Its RDS(on) = 0.0076 Ω at VGS = 4.5 V and ID = 7 A confirms full enhancement at this voltage - making SI4752DY-T1-GE3 suitable for controllers without dedicated 10 V gate drivers.
How does the SO-8 package of SI4752DY-T1-GE3 support thermal performance in high-power applications?
The SI4752DY-T1-GE3 uses an SO-8 package with an exposed drain pad that provides a low thermal resistance path to the PCB. Its typical RthJF = 16 °C/W (junction-to-foot) enables effective heat transfer to internal copper layers, allowing SI4752DY-T1-GE3 to sustain 25 A at TC = 25 °C when mounted on 1" × 1" FR4 with adequate copper area.
Is SI4752DY-T1-GE3 halogen-free and RoHS-compliant, and what documentation confirms this?
Yes, SI4752DY-T1-GE3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant per Directive 2002/95/EC, as explicitly stated in the Ordering Information line and Features section of the official Vishay datasheet (Document Number: 66819). These compliance attributes are verified for the SI4752DY-T1-GE3 manufacturing lot and marked on the device body.
SI4752DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 43 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 15 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 3W (Ta), 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4752DY-T1-GE3 FAQ
1.How can I place an order for SI4752DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4752DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4752DY-T1-GE3 reliable?
The price and inventory of SI4752DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4752DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4752DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4752DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4752DY-T1-GE3?
SI4752DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4752DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4752DY-T1-GE3?
For technical support, including SI4752DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4752DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4752DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4752DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4752DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4752DY-T1-GE3?
All SI4752DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4752DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4752DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4752DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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