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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4774DY-T1-GE3

Name: SI4774DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4774DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4774DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4774DY-T1-GE3.pdf

Description:: MOSFET N-CHANNEL 30V 16A 8SO

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Product details

Overview

SI4774DY-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) MOSFET with integrated Schottky diode in SO-8 package, featuring R_DS(on) = 0.0095 Ω at V_GS = 10 V, 16 A continuous drain current, and 9.5 nC total gate charge. It serves as a synchronous rectifier switch or buck converter power stage in notebook PC system power and memory circuits.

For engineers reviewing the SI4774DY-T1-GE3 datasheet, SI4774DY-T1-GE3 pinout, SI4774DY-T1-GE3 application, or SI4774DY-T1-GE3 equivalent, key selection criteria include its monolithic SkyFET® trench architecture, 100 % UIS and R_g tested reliability, halogen-free and RoHS-compliant construction, and thermal performance validated up to T_J = 150 °C.

Technical Context

This device integrates a trench-based N-channel power MOSFET and a co-packaged Schottky diode in a single SO-8 footprint, enabling high-efficiency synchronous rectification without external diode placement. Its gate threshold voltage (1–2.3 V) and low Q_g support fast switching in 4.5 V–10 V drive environments.

The monolithic SkyFET® Gen. III structure delivers stable R_DS(on) over temperature (normalized to 1.6× at 125 °C), while the integrated Schottky diode provides low V_SD = 0.44–0.55 V at I_S = 2 A and ultrafast t_rr = 18–35 ns, reducing reverse recovery losses in high-frequency DC/DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 5 V–12 V input buck stages
R_DS(on)	0.0095 Ω @ V_GS = 10 V - Enables ≤150 mW conduction loss at 10 A
I_D (cont)	16 A @ T_C = 25 °C - Supports high-current notebook CPU/GPU VRMs
Q_g	9.5 nC @ V_GS = 4.5 V - Optimized for 5 V gate drivers in portable systems
V_SD	0.44–0.55 V @ I_S = 2 A - Low forward drop reduces synchronous rectifier losses
t_rr	18–35 ns - Minimizes dead-time-induced shoot-through risk in 500 kHz+ converters
R_thJA	38–50 °C/W - Requires minimal PCB copper area for thermal management

Pinout & Package

SI4774DY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement. Pin 1–8 follow JEDEC MS-012 outline with pins 1, 2, 3, 5, 6, 7 as source terminals, pin 4 as gate, and pins 8, 7, 6, 5, 3, 2 as parallel-connected drain terminals (including thermal pad).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Source (S)	Common source connection for MOSFET channel and Schottky cathode
4	Gate (G)	Control terminal for MOSFET turn-on/turn-off; requires <2.3 V threshold
8, 7, 6, 5, 3, 2	Drain (D)	Parallel-connected drain terminals including thermal pad; carries full load current and heat

Key Features

Feature	Design Value
SkyFET® Monolithic Integration	Co-located MOSFET + Schottky in one SO-8 die reduces layout parasitics and board space vs. discrete solutions
100 % UIS Tested	Guarantees ruggedness against inductive switching stress in buck and flyback topologies
Low Q_gd/Q_g Ratio	3.2 nC / 9.5 nC enables clean Miller plateau transition and reduced EMI in hard-switched converters
Halogen-Free & RoHS	Complies with IEC 61249-2-21 and Directive 2002/95/EC for green electronics manufacturing
Thermal Footprint	Exposed drain pad supports ≤25 °C/W junction-to-foot resistance for direct heatsinking

Applications

Notebook PC System Power	Buck Converter Primary Switch
Use Scenario: High-efficiency 5 V–12 V input VRM supplying CPU core voltage in thin-and-light notebooks. IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing external Schottky diode in secondary side of multiphase buck. Use Value: 0.44 V V_SD and 18 ns t_rr cut conduction and recovery losses by >30 % versus standard FR diodes.	Use Scenario: Main power switch in 300 kHz–1 MHz step-down regulator for DDR memory rails. IC Role / Device Role / Timing Role: N-channel high-side switch controlled by dedicated gate driver IC. Use Value: 0.0095 Ω R_DS(on) limits I²R loss to <1 W at 15 A, enabling compact thermal design.
Synchronous Rectifier in AC/DC Adapter	Memory Power Delivery
Use Scenario: Secondary-side rectification in 65 W laptop adapter using QR flyback topology. IC Role / Device Role / Timing Role: Low-V_DS MOSFET operating in synchronous rectification mode with adaptive timing control. Use Value: Integrated Schottky eliminates need for separate diode, reducing BOM count and improving efficiency at light loads.	Use Scenario: Point-of-load regulation for LPDDR4/5 memory modules requiring fast transient response. IC Role / Device Role / Timing Role: Low-inductance, low-R_DS(on) switch in compact 2-phase interleaved buck converter. Use Value: 9.5 nC Q_g allows full switching within 50 ns gate drive window, supporting >2 MHz operation.

Notebook PC System Power

Buck Converter Primary Switch

Use Scenario: High-efficiency 5 V–12 V input VRM supplying CPU core voltage in thin-and-light notebooks.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing external Schottky diode in secondary side of multiphase buck.

Use Value: 0.44 V V_SD and 18 ns t_rr cut conduction and recovery losses by >30 % versus standard FR diodes.

Use Scenario: Main power switch in 300 kHz–1 MHz step-down regulator for DDR memory rails.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled by dedicated gate driver IC.

Use Value: 0.0095 Ω R_DS(on) limits I²R loss to <1 W at 15 A, enabling compact thermal design.

Synchronous Rectifier in AC/DC Adapter

Memory Power Delivery

Use Scenario: Secondary-side rectification in 65 W laptop adapter using QR flyback topology.

IC Role / Device Role / Timing Role: Low-V_DS MOSFET operating in synchronous rectification mode with adaptive timing control.

Use Value: Integrated Schottky eliminates need for separate diode, reducing BOM count and improving efficiency at light loads.

Use Scenario: Point-of-load regulation for LPDDR4/5 memory modules requiring fast transient response.

IC Role / Device Role / Timing Role: Low-inductance, low-R_DS(on) switch in compact 2-phase interleaved buck converter.

Use Value: 9.5 nC Q_g allows full switching within 50 ns gate drive window, supporting >2 MHz operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	30 V, R_DS(on) = 0.011 Ω @ 4.5 V, SO-8, same SkyFET® architecture but higher Q_g (12.5 nC)	Higher gate charge increases driver loss in 1 MHz+ designs; better suited for <500 kHz applications	Select when lower cost is prioritized over ultrafast switching and thermal margin is sufficient
IRF7759L2TRPBF	30 V, R_DS(on) = 0.0085 Ω @ 10 V, SO-8, no integrated Schottky; requires external diode	Lacks monolithic diode integration, increasing layout complexity and reverse recovery uncertainty	Select only if discrete diode placement is acceptable and lowest possible R_DS(on) is critical

Compared with Si7157DP-T1-GE3 and IRF7759L2TRPBF, SI4774DY-T1-GE3 uniquely balances low R_DS(on), low Q_g, and integrated Schottky in a production-validated SO-8 package-making it optimal for space-constrained, high-frequency notebook and memory VRMs where layout simplicity and thermal predictability are essential.

Availability

SI4774DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC system power, buck converter primary switching, and memory power delivery requiring stable component supply across industrial and consumer OEM programs.

Supply support for SI4774DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.

The SkyFET® product line delivers trench-based, monolithically integrated MOSFET-diode solutions optimized for high-efficiency DC/DC conversion in portable computing and server power systems.

FAQ

What is the maximum continuous drain current rating for SI4774DY-T1-GE3 at 70 °C case temperature?

The SI4774DY-T1-GE3 supports 13.6 A continuous drain current at T_C = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal constraints of the SO-8 package under typical PCB mounting conditions and ensures reliable operation within the 150 °C maximum junction temperature limit. The SI4774DY-T1-GE3 maintains this rating across its full operational voltage range.

Does SI4774DY-T1-GE3 include a body diode, and how does it differ from the integrated Schottky diode?

Yes, the SI4774DY-T1-GE3 has both a parasitic body diode inherent to its MOSFET structure and a separately fabricated, co-packaged Schottky diode. The Schottky diode (V_SD = 0.44–0.55 V, t_rr = 18–35 ns) is optimized for synchronous rectification, while the body diode exhibits higher V_SD and slower recovery. In normal operation, the Schottky conducts forward current; the body diode remains inactive unless the Schottky fails. This dual-diode architecture is explicitly documented in the "Drain-Source Body Diode and Schottky Characteristics" section of the SI4774DY-T1-GE3 datasheet.

Is SI4774DY-T1-GE3 suitable for 5 V gate drive applications?

Yes, the SI4774DY-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 0.0120 Ω and Q_g = 9.5 nC specified at V_GS = 4.5 V. Its gate threshold voltage (1–2.3 V) ensures robust turn-on with standard 5 V logic-level drivers, and its low Q_gd/Q_g ratio minimizes Miller-induced switching delays. This makes the SI4774DY-T1-GE3 especially well-suited for 5 V-controlled buck converters in notebook platforms.

What is the thermal resistance from junction to ambient (R_thJA) for SI4774DY-T1-GE3 on a standard 1" × 1" FR4 board?

The SI4774DY-T1-GE3 has a typical junction-to-ambient thermal resistance (R_thJA) of 38 °C/W and a maximum of 50 °C/W when mounted on a 1" × 1" FR4 board, as defined in the Thermal Resistance Ratings table. These values assume standard soldering and no additional heatsinking. For higher-power applications, the exposed drain pad enables improved thermal transfer to the PCB ground plane, supporting the lower R_thJF = 20–25 °C/W path.

How is the SI4774DY-T1-GE3 marked on the package, and what do the suffixes indicate?

The SI4774DY-T1-GE3 is laser-marked on the top surface with "4774DY" followed by date code and factory traceability symbols. The "T1" denotes tape-and-reel packaging (1,000 pcs/reel), and "GE3" indicates lead (Pb)-free and halogen-free compliance per IEC 61249-2-21 and RoHS Directive 2002/95/EC. This marking aligns with Vishay's standard ordering nomenclature and is verified in the "Ordering Information" section of the SI4774DY-T1-GE3 datasheet.

SI4774DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: SkyFET®, TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 14.3 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1025 pF @ 15 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4774DY-T1-GE3 FAQ

1.How can I place an order for SI4774DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4774DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4774DY-T1-GE3 reliable?

The price and inventory of SI4774DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4774DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4774DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4774DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4774DY-T1-GE3?

SI4774DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4774DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4774DY-T1-GE3?

For technical support, including SI4774DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4774DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4774DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4774DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4774DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4774DY-T1-GE3?

All SI4774DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4774DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4774DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4774DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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