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Vishay Siliconix SI4776DY-T1-GE3
- Part No.:
- SI4776DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4776DY-T1-GE3.pdf
- Description:
- MOSFET N-CHANNEL 30V 11.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,476
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Product details
Overview
SI4776DY-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) MOSFET with integrated Schottky diode in SO-8 package, featuring RDS(on) = 0.016 Ω at VGS = 10 V, 10.6 A continuous drain current at TC = 70 °C, and 5.5 nC total gate charge - optimized for low-side notebook system power and memory switching.
For engineers reviewing the SI4776DY-T1-GE3 datasheet, SI4776DY-T1-GE3 pinout, SI4776DY-T1-GE3 application, or SI4776DY-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (RthJA = 50 °C/W max), junction temperature limits (–55 to +150 °C), and validated SO-8 footprint compatibility for embedded power stage design.
Technical Context
This monolithic SkyFET® device integrates a trench-based Power MOSFET and Schottky diode on a single die, enabling synchronous rectification without external diode placement. It supports gate drive voltages from 4.5 V to 10 V and exhibits fast switching with td(on) = 10 ns (VGEN = 10 V) and tf = 6 ns under specified test conditions.
The device uses a standard SO-8 leadframe with exposed drain pad for enhanced thermal conduction. Its body diode forward voltage is 0.44 V at IS = 1 A, and reverse recovery time is 12 ns - critical for minimizing losses in high-frequency DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum drain-source blocking voltage; defines safe operating range in 3.3 V/5 V/12 V input rails. |
| RDS(on) @ VGS = 10 V | 0.016 Ω - enables ≤1.6 W conduction loss at 10 A, supporting compact thermal design in space-constrained notebooks. |
| ID (continuous, TC = 70 °C) | 9.5 A - usable current rating under typical PCB heatsinking; aligns with DDR memory VDDQ or CPU core auxiliary rail loads. |
| Qg (typ.) | 5.5 nC - low gate charge reduces driver power and enables efficient 500 kHz–1 MHz switching in buck converters. |
| VGS(th) | 1.0–2.3 V - logic-level compatible; ensures full enhancement with 3.3 V GPIO or dedicated gate drivers. |
| RthJA (max) | 50 °C/W - defines worst-case ambient-to-junction thermal rise; requires ≥1 in² copper pour for ≤100 °C junction temp at 2.5 W dissipation. |
| VSD @ IS = 1 A | 0.44–0.55 V - Schottky diode forward drop minimizes reverse recovery loss during dead-time conduction. |
Pinout & Package
SI4776DY-T1-GE3 is housed in a standard SO-8 (narrow) package per JEDEC MS-012, with exposed drain pad for thermal management. Pin 1 is gate (G), pins 2/3/4 are source (S), pins 5/6/7/8 are drain (D).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; accepts 0–10 V logic-level signals; low Ciss (521 pF) eases driver selection. |
| 2, 3, 4 | Source (S) | Power return path; tied to ground or low-side switch node; multiple pins reduce bondwire inductance. |
| 5, 6, 7, 8 | Drain (D) | Main power output; connected to exposed thermal pad; handles both MOSFET channel and Schottky anode current. |
Key Features
| Feature | Design Value |
|---|---|
| SkyFET® Monolithic Integration | Single-die co-location of MOSFET and Schottky diode eliminates layout mismatch and parasitic inductance in synchronous rectifiers. |
| 100 % Rg and UIS Tested | Guarantees gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress. |
| Halogen-free & RoHS Compliant | Fulfills IEC 61249-2-21 and EU Directive 2002/95/EC requirements for environmentally constrained end equipment. |
| Low Qgd/Qgs Ratio | Qgd = 1.9 nC, Qgs = 1.5 nC - improves Miller immunity and enables stable operation with moderate gate resistors. |
Applications
| Notebook Memory Power Supply | CPU Core Auxiliary Rail |
|---|---|
Use Scenario: Provides 1.2–1.5 V VDDQ power to DDR3/DDR4 memory modules in ultrabooks and thin-and-light platforms. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 500 kHz–1 MHz buck converter; commutates with high-side FET during PWM cycle. Use Value: 0.016 Ω RDS(on) and 0.44 V VSD reduce conduction loss by >25% versus discrete MOSFET+Schottky solutions. |
Use Scenario: Delivers clean, tightly regulated 0.8–1.1 V bias to CPU voltage regulator controller (VRM) auxiliary stages. IC Role / Device Role / Timing Role: Secondary-side switch in multiphase VRM output stage; handles peak currents up to 10 A per phase. Use Value: 9.5 A continuous rating at 70 °C case temperature supports sustained turbo-mode CPU loads without derating. |
| Embedded System Point-of-Load Converter | Industrial SSD Power Management |
Use Scenario: Powers FPGA I/O banks or ASIC peripherals in industrial control modules requiring <10 ms startup response. IC Role / Device Role / Timing Role: Low-side switch in fixed-frequency buck regulator; driven by PWM controller with 4.5 V gate threshold margin. Use Value: 1.0–2.3 V VGS(th) ensures reliable turn-on across –40 to +85 °C ambient, eliminating bootstrapping complexity. |
Use Scenario: Supplies 3.3 V VCC to NAND flash controllers and PCIe interface ICs in enterprise solid-state drives. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in isolated flyback or non-isolated buck topology; handles burst-mode load transients. Use Value: 12 ns body diode trr and 4.5 nC Qrr suppress voltage spikes during light-load discontinuous conduction mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 0.0095 Ω @ 10 V but higher Qg = 22 nC; SO-8 package with same pinout. | Better conduction loss at high current, but slower switching and higher driver loss above 300 kHz. | Select when thermal budget dominates over switching frequency; verify gate driver capability for 22 nC charge. |
| IRF7759L2TRPBF | RDS(on) = 0.0125 Ω @ 10 V; no integrated Schottky; TO-263 package (larger footprint, better thermal). | Requires external Schottky diode; superior thermal performance (RthJC = 1.2 °C/W) but needs extra board area. | Choose for high-power (>15 W) designs where PCB real estate allows TO-263 and discrete diode integration. |
Compared with Si7850DP-T1-GE3 and IRF7759L2TRPBF, SI4776DY-T1-GE3 offers balanced trade-offs: lowest gate charge among SO-8 integrated Schottky MOSFETs, verified 0.44 V VSD, and production-proven reliability in notebook memory rails - making it optimal for space-constrained, medium-frequency (<1 MHz) point-of-load converters.
Availability
SI4776DY-T1-GE3 is available at Aetrix Electronics and suitable for notebook memory power supply, CPU core auxiliary rail, and embedded system point-of-load converter applications requiring stable component supply, Pb-free compliance, and SO-8 footprint consistency.
Supply support for SI4776DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.
The SI4776DY-T1-GE3 belongs to Vishay's SkyFET® monolithic MOSFET + Schottky family, engineered specifically for high-efficiency, low-profile synchronous rectification in portable and embedded DC-DC converters.
FAQ
What is the maximum continuous drain current for SI4776DY-T1-GE3 at 70 °C case temperature?
The SI4776DY-T1-GE3 supports 9.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value assumes surface mounting on a 1" × 1" FR4 board with adequate copper pour. At higher case temperatures, current must be linearly derated per the published derating curve - for example, to 7.5 A at TC = 90 °C.
Does SI4776DY-T1-GE3 include an integrated Schottky diode, and what is its forward voltage?
Yes, SI4776DY-T1-GE3 integrates a Schottky diode monolithically with the MOSFET. Its forward voltage VSD is 0.44 V minimum and 0.55 V maximum at IS = 1 A and TJ = 25 °C. This low VSD directly reduces conduction loss during dead-time conduction in synchronous buck topologies.
What is the gate threshold voltage range for SI4776DY-T1-GE3, and is it compatible with 3.3 V logic?
The gate threshold voltage VGS(th) for SI4776DY-T1-GE3 is 1.0–2.3 V at ID = 1 mA, confirming full enhancement well within 3.3 V logic drive capability. At VGS = 4.5 V, it delivers RDS(on) = 0.020 Ω - making SI4776DY-T1-GE3 suitable for direct microcontroller GPIO drive without level-shifting.
What is the thermal resistance from junction to ambient (RthJA) for SI4776DY-T1-GE3, and how is it measured?
The maximum RthJA for SI4776DY-T1-GE3 is 50 °C/W, measured under standard conditions: surface mounting on a 1" × 1" FR4 board with 1 oz copper, t ≤ 10 s pulse duration. For steady-state design, use the typical value of 40 °C/W and ensure sufficient copper area - especially under the exposed drain pad - to maintain TJ ≤ 150 °C.
Is SI4776DY-T1-GE3 RoHS and halogen-free compliant, and what standards does it meet?
Yes, SI4776DY-T1-GE3 is both RoHS-compliant per Directive 2002/95/EC and halogen-free per IEC 61249-2-21. The "-GE3" suffix explicitly denotes lead-free and halogen-free construction. These certifications are confirmed in the Vishay datasheet document number 63316 and apply to all units shipped under this part number.
SI4776DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- SkyFET®, TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 521 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4776DY-T1-GE3 FAQ
1.How can I place an order for SI4776DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4776DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4776DY-T1-GE3 reliable?
The price and inventory of SI4776DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4776DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4776DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4776DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4776DY-T1-GE3?
SI4776DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4776DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4776DY-T1-GE3?
For technical support, including SI4776DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4776DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4776DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4776DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4776DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4776DY-T1-GE3?
All SI4776DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4776DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4776DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4776DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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