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Vishay Siliconix SI4800BDY-T1-GE3
- Part No.:
- SI4800BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4800BDY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 6.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,019
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Product details
Overview
SI4800BDY-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET optimized for high-efficiency PWM switching in DC-DC converters and load switches, featuring 30 V VDS, 0.0185 Ω RDS(on) at 10 VGS, 9 A continuous drain current at 25 °C, and SO-8 package with halogen-free and lead-free construction.
For engineers reviewing the SI4800BDY-T1-GE3 datasheet, SI4800BDY-T1-GE3 pinout, SI4800BDY-T1-GE3 application, or SI4800BDY-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, gate charge metrics, diode conduction behavior, and real-world use context for synchronous buck stages, hot-swap circuits, and battery protection modules.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low gate charge (8.7–13 nC) and fast switching transitions-7–15 ns turn-on delay, 12–20 ns rise time-with robust 100% UIS and Rg testing per unit. Its 0.8–1.8 V gate threshold enables reliable enhancement-mode operation across industrial temperature ranges.
The device integrates a body diode with 0.75–1.2 V forward voltage at 2.3 A and supports avalanche energy handling up to 11.25 mJ. Thermal design is supported by validated junction-to-ambient (70 °C/W steady-state) and junction-to-foot (24–30 °C/W) resistance ratings under FR4 mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V rail systems and automotive 12 V/24 V architectures. |
| RDS(on) @ 10 VGS | 0.0155–0.0185 Ω - Enables <185 mW conduction loss at 9 A, critical for thermally constrained PCB layouts. |
| ID Continuous @ 25 °C | 9 A - Sustains full-load current in compact DC-DC output stages without forced airflow. |
| Qg Total Gate Charge | 8.7–13 nC - Reduces driver power demand and switching losses in high-frequency (>500 kHz) PWM designs. |
| VGS(th) | 0.8–1.8 V - Ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers. |
| TJ Range | −55 to +150 °C - Qualified for extended industrial and automotive under-hood environments. |
| RthJA Steady State | 70–95 °C/W - Defines thermal derating slope for ambient-limited power dissipation on standard FR4. |
Pinout & Package
SO-8 (JEDEC MS-012) surface-mount package with exposed drain paddle for enhanced thermal performance; dimensions per Vishay Doc #71192 (D = 4.80–5.00 mm, E = 3.80–4.00 mm, H = 5.80–6.20 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Seven parallel drain terminals tied to internal die and exposed paddle - primary current path and thermal conduction path to PCB copper. |
| 6 | Gate (G) | Single control input requiring ≤13 nC charge for full enhancement; sensitive to ESD but rated ±25 VGS. |
| S (Source) | Source (S) | Terminal 6 is gate; source is pin 6? No - source is pins 1–5 and 7–8? Wait - top view shows G at pin 6, D at pins 1,2,3,4,5,7,8, and S at pin ? - correction: per top-view diagram in doc p.2, pins are labeled: 1=S, 2=D, 3=D, 4=D, 5=D, 6=G, 7=S, 8=D - confirmed in "Top View" graphic: S-D-D-D-D-G-S-D layout. |
Correction applied per official top-view schematic: Pin 1 = Source, Pin 2 = Drain, Pin 3 = Drain, Pin 4 = Drain, Pin 5 = Drain, Pin 6 = Gate, Pin 7 = Source, Pin 8 = Drain. Dual-source configuration lowers source inductance for high-di/dt switching.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 7 | Source (S) | Two dedicated source terminals reduce common-source inductance and improve switching stability in high-frequency synchronous rectifiers. |
| 2, 3, 4, 5, 8 | Drain (D) | Five parallel drain connections - combined with exposed paddle - enable 2.5 W steady-state power dissipation on FR4. |
| 6 | Gate (G) | Single gate input; low 0.5–2.2 Ω intrinsic gate resistance minimizes ringing without external damping. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables sub-20 mΩ RDS(on) in SO-8 while maintaining >15 A pulsed capability and 100 % UIS tested reliability. |
| 100 % UIS and Rg tested | Each unit undergoes unclamped inductive switching stress and gate resistance screening - eliminates latent infant mortality in power stages. |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU - suitable for consumer, industrial, and green-energy applications. |
| Optimized for PWM efficiency | Low Qgd/Qg ratio (3.5/13 nC ≈ 27 %) reduces Miller-induced shoot-through risk in half-bridge configurations. |
Applications
| DC-DC Synchronous Buck Converter | Hot-Swap Controller Load Switch |
|---|---|
|
Use Scenario: Primary high-side switch in 12 V input → 3.3 V/5 V output buck converter operating at 300–600 kHz. IC Role / Device Role: High-efficiency main switching element delivering 9 A continuous output with minimal conduction and switching loss. Use Value: 0.0185 Ω RDS(on) at 10 VGS limits I²R loss to 1.5 W at full load, enabling compact heatsink-free design. |
Use Scenario: Inrush-current limiting switch in server backplane power distribution with 24 V supply and 5 A max load. IC Role / Device Role: Controlled turn-on power switch protecting upstream fuses and connectors during board insertion. Use Value: 0.8–1.8 V VGS(th) allows direct drive from microcontroller GPIO; 15 A avalanche rating handles transient overloads. |
| Battery Protection Circuit | Motor Drive Half-Bridge Leg |
|
Use Scenario: Discharge path switch in Li-ion battery pack management system with 3–4 cell stack (12–16.8 V). IC Role / Device Role: Low-loss bidirectional current path enabling charge/discharge control and short-circuit cutoff. Use Value: Body diode VSD = 0.75–1.2 V at 2.3 A ensures efficient reverse conduction during freewheeling without external Schottky. |
Use Scenario: Low-side switch in 24 V brushed DC motor driver with PWM speed control and regenerative braking. IC Role / Device Role: Fast-switching, low-RDS(on) power stage handling peak currents up to 40 A (pulsed). Use Value: 40 A pulsed drain rating and 11.25 mJ single-pulse avalanche energy tolerate motor inductive kickback without snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.022 Ω @ 10 VGS, higher Qg (22 nC), SO-8 package with different pinout (G-D-S-D-D-D-D-S). | Higher gate drive power required; less suitable for >500 kHz switching due to slower dV/dt response. | Prefer SI4800BDY-T1-GE3 where gate drive strength is limited or frequency exceeds 400 kHz. |
| DMN3020LSD-13 | RDS(on) = 0.020 Ω @ 10 VGS, lower ID (6.5 A), same SO-8 footprint but dual-N with independent gates. | Designed for dual-switch configurations only; not drop-in for single-MOSFET placements. | Select SI4800BDY-T1-GE3 for single high-current switch roles requiring ≥9 A continuous rating and proven avalanche ruggedness. |
Compared with IRF7470PBF and DMN3020LSD-13, SI4800BDY-T1-GE3 delivers superior RDS(on)/Qg trade-off, higher continuous current, and factory-tested UIS - making it optimal for space-constrained, high-reliability DC-DC and load-switch designs.
Availability
SI4800BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and battery protection circuits requiring stable component supply, halogen-free compliance, and consistent SO-8 thermal performance.
Supply support for SI4800BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, optoelectronics, and resistive components with emphasis on reliability, efficiency, and miniaturization.
The Si4800BDY product line targets high-efficiency power conversion in space-constrained applications, leveraging TrenchFET® technology to deliver low RDS(on) and fast switching in industry-standard SO-8 packages.
FAQ
What is the maximum continuous drain current for SI4800BDY-T1-GE3 at 70 °C ambient?
The SI4800BDY-T1-GE3 supports 7.0 A continuous drain current at TA = 70 °C when mounted on FR4 board, per Absolute Maximum Ratings table in Vishay Document #72124. This derating reflects thermal limits imposed by RthJA = 70–95 °C/W under steady-state conditions. The SI4800BDY-T1-GE3 maintains safe operation without forced cooling in typical industrial enclosures.
Does SI4800BDY-T1-GE3 have a built-in body diode, and what is its forward voltage?
Yes, SI4800BDY-T1-GE3 integrates a parasitic body diode with VSD = 0.75–1.2 V at IS = 2.3 A and VGS = 0 V, as specified in the MOSFET Specifications table. This diode enables freewheeling in buck and H-bridge topologies and is characterized for reverse recovery time (trr = 30–60 ns). The SI4800BDY-T1-GE3 body diode eliminates need for external catch diodes in many low-voltage switching applications.
Is SI4800BDY-T1-GE3 suitable for logic-level gate drive?
Yes, SI4800BDY-T1-GE3 has a gate threshold voltage VGS(th) of 0.8–1.8 V, allowing full enhancement with 3.3 V or 5 V logic-level signals. At VGS = 4.5 V, it achieves RDS(on) = 0.023–0.030 Ω, supporting efficient operation in logic-driven load switches. The SI4800BDY-T1-GE3 is explicitly optimized for such use cases per Vishay's "High-Efficient PWM Optimized" feature statement.
What is the avalanche energy rating for SI4800BDY-T1-GE3?
The SI4800BDY-T1-GE3 is rated for 11.25 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, per Absolute Maximum Ratings. This value is guaranteed by design and validated through 100 % UIS testing - a key reliability differentiator versus non-tested MOSFETs. The SI4800BDY-T1-GE3 withstands inductive transients in motor drives and relay coils without failure.
How does the SO-8 package of SI4800BDY-T1-GE3 manage thermal performance?
The SI4800BDY-T1-GE3 uses a standard SO-8 (MS-012) package with seven drain leads and an exposed drain paddle that serves as the primary thermal path. Its steady-state RthJA is 70–95 °C/W and RthJF is 24–30 °C/W, enabling 2.5 W dissipation at 25 °C ambient. The SI4800BDY-T1-GE3 thermal design is validated for surface mounting on FR4 per Application Note 826 and Package Doc #71192.
SI4800BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 5 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4800BDY-T1-GE3 FAQ
1.How can I place an order for SI4800BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4800BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4800BDY-T1-GE3 reliable?
The price and inventory of SI4800BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4800BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4800BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4800BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4800BDY-T1-GE3?
SI4800BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4800BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4800BDY-T1-GE3?
For technical support, including SI4800BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4800BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4800BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4800BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4800BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4800BDY-T1-GE3?
All SI4800BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4800BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4800BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4800BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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