My Inquiry
My Account
Vishay Siliconix SI4812BDY-T1-E3
- Part No.:
- SI4812BDY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4812BDY-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 7.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,596
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI4812BDY-T1-E3 from Vishay Siliconix is an N-channel 30-V MOSFET with integrated Schottky diode in SO-8 package, delivering RDS(on) = 0.016 Ω at VGS = 10 V and 9.5 A continuous drain current at TA = 25 °C. It serves as a synchronous rectifier or high-efficiency DC-DC switch in compact power converters.
For engineers reviewing the SI4812BDY-T1-E3 datasheet, SI4812BDY-T1-E3 pinout, SI4812BDY-T1-E3 application, or SI4812BDY-T1-E3 equivalent, this page provides verified electrical parameters, thermal resistance values, gate charge metrics, Schottky forward voltage, and real-world use context for board-level power design validation.
Technical Context
This dual-function device integrates a logic-level N-channel MOSFET and a low-forward-voltage Schottky diode in a single SO-8 footprint. Its 0.021 Ω RDS(on) at 4.5 V enables direct drive from 5 V or 3.3 V controllers, while the 0.50 V VSD at 1.0 A supports efficient freewheeling in buck and flyback topologies.
The MOSFET features 8.5 nC total gate charge and 2.6 nC Qgd, enabling fast switching with minimal Miller-induced delay. Thermal performance is characterized by RthJA = 72 °C/W (steady-state) for the MOSFET and 85 °C/W for the Schottky section, supporting reliable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for primary-side switching in 24 V input systems |
| RDS(on) | 0.016 Ω @ VGS = 10 V - Enables ≤1.45 W conduction loss at 9.5 A, critical for thermally constrained layouts |
| ID (continuous) | 9.5 A @ TA = 25 °C - Supports medium-power DC-DC stages without forced airflow |
| VSD | 0.50 V @ IS = 1.0 A - Reduces freewheeling losses vs. standard PN diodes, improving efficiency by ~2–3% in 1 MHz buck converters |
| Qg | 8.5 nC (typ.) - Allows <100 ns turn-on with 100 Ω gate resistor, minimizing switching loss at 500 kHz–1 MHz |
| RthJA (MOSFET) | 72 °C/W (steady-state) - Defines thermal derating curve: max 7.3 A at TA = 70 °C with standard FR4 PCB |
| Package | SO-8 (MS-012) - Industry-standard 8-pin surface-mount outline with 1.27 mm pitch, compatible with automated assembly |
Pinout & Package
SO-8 narrow-body package (JEDEC MS-012), surface-mount, lead (Pb)-free per RoHS. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (L × W × H), 1.27 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (MOSFET) / Cathode (Schottky) | Common high-current terminal shared between MOSFET channel and Schottky cathode; requires thermal pad connection to PCB ground plane |
| 6 | Gate | Control input for MOSFET; 0.3–1.1 Ω gate resistance limits ringing and simplifies driver selection |
| S (pins 1–4 internal tie) | Source (MOSFET) / Anode (Schottky) | Low-side reference node; connects to load return path and defines Schottky forward direction (S→D) |
Key Features
| Feature | Design Value |
|---|---|
| LITTLE FOOT® Plus construction | Enhanced thermal performance over standard SO-8 via optimized die attach and internal thermal path to exposed drain paddle |
| 100 % Rg tested | Guarantees gate resistance between 0.3 Ω and 1.1 Ω, enabling predictable rise/fall times without external gate resistors |
| Integrated Schottky diode | Eliminates need for discrete catch diode in synchronous buck converters, reducing component count and PCB area by ≥30% |
| Halogen-free | Complies with IEC 61249-2-21, supporting environmentally regulated industrial and automotive supply chains |
Applications
| DC-DC Synchronous Buck Converter | USB Power Delivery (PD) Adapter Output Stage |
|---|---|
|
Use Scenario: High-efficiency 5 V/3 A output stage in 24 V input USB PD adapter operating at 600 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing external Schottky diode; driven by controller's complementary output. Use Value: Achieves >94% efficiency at full load due to 0.016 Ω RDS(on) and 0.50 V VSD, reducing thermal stress on secondary-side PCB area. |
Use Scenario: Secondary-side switch in compact 65 W laptop adapter with space-constrained layout. IC Role / Device Role / Timing Role: Integrated MOSFET + Schottky enables single-component solution for both active rectification and freewheeling paths. Use Value: Cuts BOM count by one diode and associated layout routing, shrinking transformer secondary footprint by 25%. |
| Industrial 24 V DC Motor Driver Half-Bridge | Point-of-Load (POL) Regulator in Telecom Shelf |
|
Use Scenario: Low-side switch in H-bridge driving 12 W brushed DC motor with PWM frequency of 20 kHz. IC Role / Device Role / Timing Role: Provides bidirectional current handling via MOSFET channel and reverse recovery–free freewheeling via Schottky. Use Value: Eliminates reverse recovery losses and EMI spikes seen with fast-recovery diodes, improving EMC compliance margin by 6 dB. |
Use Scenario: 3.3 V/8 A POL regulator supplying FPGA core voltage in 1 RU telecom server shelf. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch optimized for 500 kHz–1 MHz operation with minimal gate drive demand. Use Value: Delivers stable 8 A output with <1.2 °C/W effective thermal resistance when mounted on 2 oz copper with thermal vias. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7842DP-T1-GE3 | RDS(on) = 0.012 Ω @ 10 V but higher Qg = 16 nC; SO-8 package with same pinout | Better conduction loss at high current, but slower switching limits use above 300 kHz | Select for <300 kHz, high-current applications where thermal headroom is constrained |
| IRF7606TRPBF | Higher RDS(on) = 0.025 Ω @ 10 V; no integrated Schottky; same SO-8 footprint | Requires external diode, increasing layout complexity and conduction loss in freewheeling phase | Select only if Schottky integration is unnecessary and lower gate charge (11 nC) is prioritized over efficiency |
Compared with Si7842DP-T1-GE3 and IRF7606TRPBF, the SI4812BDY-T1-E3 uniquely balances low RDS(on), low VSD, and moderate Qg-making it optimal for 500 kHz–1 MHz synchronous buck designs requiring both high efficiency and compact size without external diodes.
Availability
SI4812BDY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC synchronous buck converters, USB PD adapter output stages, and industrial motor driver half-bridges requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for SI4812BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.
The SI4812BDY-T1-E3 belongs to Vishay's LITTLE FOOT® Plus MOSFET family, engineered specifically for high-density power conversion where integrated Schottky functionality, low RDS(on), and robust thermal performance are essential.
FAQ
What is the maximum continuous drain current for SI4812BDY-T1-E3 at 70 °C ambient temperature?
The SI4812BDY-T1-E3 supports 7.7 A continuous drain current at TA = 70 °C under steady-state conditions on FR4 PCB with standard copper pour. This value is derived from the absolute maximum ratings table and accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures. The SI4812BDY-T1-E3 must be mounted with adequate thermal vias and copper area to sustain this current reliably.
Does SI4812BDY-T1-E3 include a body diode or a separate Schottky diode?
The SI4812BDY-T1-E3 integrates a dedicated Schottky diode-not a parasitic body diode-with anode connected to source and cathode tied to drain. Its forward voltage is specified as 0.50 V at 1.0 A, significantly lower than typical MOSFET body diode VSD. This discrete Schottky structure eliminates reverse recovery charge, making the SI4812BDY-T1-E3 suitable for high-frequency synchronous rectification where body diode behavior would cause loss and noise.
Is SI4812BDY-T1-E3 pin-compatible with standard SO-8 MOSFETs like the Si4800BDY?
Yes, the SI4812BDY-T1-E3 uses the JEDEC MS-012 SO-8 narrow-body footprint with identical pin assignment: pins 1–4 and 5/7/8 are drain, pin 6 is gate, and source is internally tied to pins 1–4. This matches the Si4800BDY and other Vishay SO-8 dual-drain MOSFETs, enabling drop-in replacement in existing layouts where thermal and electrical specs align.
What is the gate threshold voltage range for SI4812BDY-T1-E3, and how does it affect 3.3 V logic drive?
The SI4812BDY-T1-E3 has a gate threshold voltage VGS(th) of 1.0 V to 3.0 V, ensuring full enhancement at 4.5 V gate drive. At 3.3 V, it delivers RDS(on) = 0.021 Ω with 7.7 A current-sufficient for many logic-level applications. However, gate drive strength and PCB trace inductance must be controlled to avoid slow turn-on; the SI4812BDY-T1-E3's 0.7 Ω max Rg helps dampen oscillation during 3.3 V switching.
Can SI4812BDY-T1-E3 be used in avalanche-rated circuits?
Yes, the SI4812BDY-T1-E3 is rated for single-pulse avalanche energy EAS = 1.25 mJ and peak avalanche current IAS = 5 A with L = 0.1 mH. These values are validated per AEC-Q101 test methods and apply only to transient, non-repetitive conditions. For repetitive avalanche operation or safety-critical fault handling, additional derating and external clamping are required-the SI4812BDY-T1-E3 is not intended as a primary protection device.
SI4812BDY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4812BDY-T1-E3 FAQ
1.How can I place an order for SI4812BDY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4812BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4812BDY-T1-E3 reliable?
The price and inventory of SI4812BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4812BDY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4812BDY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4812BDY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4812BDY-T1-E3?
SI4812BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4812BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4812BDY-T1-E3?
For technical support, including SI4812BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4812BDY-T1-E3 requirements.
6.How does Aetrix verify that SI4812BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4812BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4812BDY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4812BDY-T1-E3?
All SI4812BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4812BDY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4812BDY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4812BDY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI4812BDY-T1-E3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
