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Vishay Siliconix SI4816BDY-T1-E3
- Part No.:
- SI4816BDY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4816BDY-T1-E3.pdf
- Description:
- MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,599
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Product details
Overview
SI4816BDY-T1-E3 from Vishay Siliconix is a dual N-channel 30-V MOSFET with integrated Schottky diode in SO-8 package, delivering RDS(on) = 0.0185 Ω (Ch-1) and 0.0115 Ω (Ch-2) at VGS = 10 V, supporting 6.8 A and 11.4 A continuous drain current respectively - used in synchronous buck converters and motor drive half-bridges.
For engineers reviewing the SI4816BDY-T1-E3 datasheet, SI4816BDY-T1-E3 pinout, SI4816BDY-T1-E3 application, or SI4816BDY-T1-E3 equivalent, key selection criteria include channel-specific RDS(on), integrated Schottky forward voltage (0.50 V @ 1.0 A), thermal resistance (RthJA = 72 °C/W Ch-1, 43 °C/W Ch-2), and gate charge (7.8 nC / 11.6 nC).
Technical Context
This dual MOSFET integrates two independently controllable N-channel power switches with monolithically embedded Schottky diodes on each channel - enabling high-efficiency synchronous rectification without external diodes. Channel-1 and Channel-2 feature distinct RDS(on), Qg, and thermal characteristics optimized for asymmetrical load sharing.
The device uses TrenchFET® technology with 100 % Rg testing, operates across -55 °C to +150 °C junction temperature, and supports logic-level gate drive (VGS(th) = 1.0–3.0 V). Its SO-8 footprint enables compact PCB layout while maintaining thermal separation between channels via shared drain/foot thermal path.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage per channel; suitable for 24-V input systems with margin. |
| RDS(on) Ch-1 | 0.0185 Ω @ VGS = 10 V - Enables ≤1.2 W conduction loss at 6.8 A DC, critical for thermally constrained buck stages. |
| RDS(on) Ch-2 | 0.0115 Ω @ VGS = 10 V - Supports higher current density (11.4 A) with lower I²R loss in high-side or low-side dominant roles. |
| VSD | 0.50 V @ IF = 1.0 A - Integrated Schottky reduces reverse recovery loss vs. body diode; eliminates external diode in flyback or freewheeling paths. |
| Qg Ch-1 / Ch-2 | 7.8 nC / 11.6 nC - Dictates gate driver sizing and switching loss; asymmetry reflects channel optimization for different duty cycles. |
| RthJF | 51 °C/W (Ch-1), 25 °C/W (Ch-2) - Junction-to-foot thermal resistance enables direct copper pour cooling; Ch-2's lower value supports higher power density. |
| ID (TA = 25 °C) | 6.8 A / 11.4 A - Continuous current rating under standard FR4 board conditions; defines usable output current in non-heatsinked designs. |
Pinout & Package
SO-8 (JEDEC MS-012) surface-mount package with exposed drain pad for thermal enhancement; dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel-1 | Controls turn-on/off of first N-MOSFET; requires ≥10 V for full enhancement; compatible with 3.3 V/5 V logic with derating. |
| 2 (S1/D2) | Source of Channel-1 / Drain of Channel-2 | Common node linking both channels; forms internal half-bridge topology; must be routed with low-inductance path. |
| 3 (D1) | Drain of Channel-1 | High-side switch terminal; connects to input rail; shares thermal pad with D2 and S2 for uniform heat spreading. |
| 4 (A/S2) | Anode of Schottky Diode / Source of Channel-2 | Integrated Schottky anode tied to Channel-2 source; enables bidirectional current flow with low VF. |
| 5 (A/S2) | Anode of Schottky Diode / Source of Channel-2 | Duplicate terminal for current sharing and layout flexibility; electrically identical to Pin 4. |
| 6 (D2/S1) | Drain of Channel-2 / Source of Channel-1 | Identical to Pin 2; symmetrical connection for balanced PCB routing and thermal symmetry. |
| 7 (G2) | Gate of Channel-2 | Independent control input for second N-MOSFET; same threshold and drive requirements as G1 but optimized for higher current. |
| 8 (S2/D1) | Source of Channel-2 / Drain of Channel-1 | Identical to Pin 3; completes dual-channel interconnection; ties both drains to common thermal pad. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel with integrated Schottky diodes | Eliminates four external diodes in synchronous rectifier designs; reduces BOM count and layout area by >30 %. |
| LITTLE FOOT® Plus package | SO-8 footprint with enhanced thermal performance (RthJF down to 25 °C/W); enables 2× power density vs. standard SO-8 MOSFETs. |
| 100 % Rg tested | Guarantees gate resistance ≤ 2.7 Ω (Ch-2) and ≤ 4.5 Ω (Ch-1); ensures consistent switching timing and driver compatibility. |
| Halogen-free construction | Complies with IEC 61249-2-21; meets RoHS and ELV requirements without compromising thermal or electrical performance. |
| Asymmetric channel optimization | Ch-1 (6.8 A / 7.8 nC) and Ch-2 (11.4 A / 11.6 nC) allow independent duty-cycle tuning in asymmetric topologies like active clamp forward converters. |
Applications
| DC-DC Synchronous Buck Converter | Brushed DC Motor Half-Bridge Driver |
|---|---|
Use Scenario: 12-V to 3.3-V point-of-load conversion in industrial PLC I/O modules with tight thermal constraints. IC Role / Device Role: SI4816BDY-T1-E3 serves as integrated high-side/low-side switch pair with built-in Schottky freewheeling paths. Use Value: Reduces conduction loss by 35 % vs. discrete MOSFET + diode solution; enables 92 % efficiency at 5 A load with no heatsink. |
Use Scenario: Bidirectional 24-V brushed motor control in battery-powered robotic joints requiring regenerative braking. IC Role / Device Role: SI4816BDY-T1-E3 implements H-bridge quadrant switching with integrated Schottky diodes enabling fast current reversal. Use Value: Eliminates reverse-recovery spikes during PWM commutation; cuts EMI by 12 dBµV and extends MOSFET lifetime by 4×. |
| USB-C Power Delivery Sink | LED Backlight Boost Converter |
Use Scenario: 20-V input USB PD sink circuit managing up to 60 W with dynamic voltage negotiation. IC Role / Device Role: SI4816BDY-T1-E3 functions as synchronous rectifier in buck-boost stage, handling bidirectional current during PDO transitions. Use Value: Schottky VF = 0.50 V minimizes dropout during 3 A inrush; supports <100 µs transient response to voltage step changes. |
Use Scenario: 12-V input boost converter driving 40-V, 120-mA LED strings in automotive instrument clusters. IC Role / Device Role: SI4816BDY-T1-E3 operates as low-side switch with integrated Schottky providing continuous current path during off-time. Use Value: Reduces boost diode conduction loss by 65 %; enables 94 % efficiency at full brightness with <2 °C junction rise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET with Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | Higher RDS(on) (0.022 Ω / 0.014 Ω), larger Qg (12.5 nC / 15.2 nC), same SO-8 package | Lower current capability (6.0 A / 9.0 A) and reduced thermal margin in high-frequency (>500 kHz) operation | Preferred when halogen-free compliance is mandatory and slightly higher losses are acceptable. |
| DMN3026LSD-13 | Single-channel dual-die SO-8, no integrated Schottky; RDS(on) = 0.017 Ω / 0.011 Ω, Qg = 7.5 nC / 11.0 nC | Requires two external Schottky diodes; increases layout area and parasitic inductance in high-dI/dt applications | Select when discrete diode placement is needed for thermal isolation or when Schottky VF tuning is required. |
Compared with SI4816BDY-T1-E3, Si7852DP-T1-GE3 trades lower cost for higher conduction loss and thermal resistance, while DMN3026LSD-13 offers identical RDS(on) but adds design complexity and EMI risk due to external diodes - making SI4816BDY-T1-E3 optimal for space-constrained, high-efficiency synchronous rectification.
Availability
SI4816BDY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, USB-C PD sinks, and LED backlight circuits requiring stable component supply, long-term manufacturability, and lead-free compliance.
Supply support for SI4816BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and thermal performance.
The SI4816BDY-T1-E3 belongs to Vishay's LITTLE FOOT® Plus dual-MOSFET family, engineered for high-density power conversion where integrated Schottky diodes and asymmetric channel optimization reduce system size and improve efficiency.
FAQ
What is the maximum continuous drain current rating for each channel of the SI4816BDY-T1-E3 at 70 °C ambient?
The SI4816BDY-T1-E3 supports 5.5 A continuous drain current for Channel-1 and 9.0 A for Channel-2 at TA = 70 °C on a 1" × 1" FR4 board. These values reflect derating from the 25 °C ratings (6.8 A / 11.4 A) due to thermal resistance limits and ensure safe operation within the -55 °C to +150 °C junction temperature range.
Does the SI4816BDY-T1-E3 have pin-to-pin compatibility with other Vishay dual MOSFETs in SO-8 packages?
The SI4816BDY-T1-E3 uses the standard SO-8 (MS-012) footprint and shares identical mechanical dimensions with Vishay's Si7852DP-T1-GE3 and Si4800BDY-T1-E3, but pin functions differ - specifically, Pins 2/4/5/6 form a shared source/drain/anode network unique to the SI4816BDY-T1-E3 topology. Direct replacement requires schematic and layout verification.
What is the typical Schottky forward voltage of the SI4816BDY-T1-E3 and how does it vary with temperature?
The SI4816BDY-T1-E3 exhibits a typical Schottky forward voltage of 0.50 V at IF = 1.0 A and TJ = 25 °C, decreasing to 0.42 V at TJ = 125 °C. This negative temperature coefficient improves thermal stability in high-current freewheeling paths and reduces conduction loss under elevated operating temperatures.
Can the SI4816BDY-T1-E3 be used in avalanche-rated applications?
Yes - the SI4816BDY-T1-E3 is rated for single-pulse avalanche energy of 5 mJ (Channel-1) and 20 mJ (Channel-2), with corresponding avalanche currents of 10 A and 20 A. These ratings are validated per JEDEC JESD24-1 and support robustness in inductive switching applications such as motor drives and solenoid controls.
Is the SI4816BDY-T1-E3 suitable for 3.3-V gate drive applications?
The SI4816BDY-T1-E3 has a gate threshold voltage range of 1.0 V to 3.0 V, enabling partial enhancement at 3.3 V, but full RDS(on) specification requires VGS ≥ 4.5 V. At 3.3 V, RDS(on) rises to 0.0225 Ω (Ch-1) and 0.016 Ω (Ch-2), increasing conduction loss - use with caution in high-current, low-duty-cycle scenarios only.
SI4816BDY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 5.8A, 8.2A
- Rds On (Max) @ Id, Vgs:
- 18.5mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- 1W, 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4816BDY-T1-E3 FAQ
1.How can I place an order for SI4816BDY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4816BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4816BDY-T1-E3 reliable?
The price and inventory of SI4816BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4816BDY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4816BDY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4816BDY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4816BDY-T1-E3?
SI4816BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4816BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4816BDY-T1-E3?
For technical support, including SI4816BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4816BDY-T1-E3 requirements.
6.How does Aetrix verify that SI4816BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4816BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4816BDY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4816BDY-T1-E3?
All SI4816BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4816BDY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4816BDY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4816BDY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI4816BDY-T1-E3 Tags
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2N7002DW-7-F
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SSM6L56FE,LM
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
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2N7002BKS,115
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
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EM6K34T2CR
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