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Vishay Siliconix SI4816BDY-T1-GE3
- Part No.:
- SI4816BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4816BDY-T1-GE3.pdf
- Description:
- MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,421
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Product details
Overview
SI4816BDY-T1-GE3 from Vishay Siliconix is a dual N-channel 30-V MOSFET with integrated Schottky diode in SO-8 package, delivering RDS(on) = 0.0185 Ω (Ch-1) and 0.0115 Ω (Ch-2) at VGS = 10 V, 6.8 A/11.4 A continuous drain current, and 7.8/11.6 nC total gate charge - used in synchronous buck converters and OR-ing circuits for power rail redundancy.
For engineers reviewing the SI4816BDY-T1-GE3 datasheet, SI4816BDY-T1-GE3 pinout, SI4816BDY-T1-GE3 application, or SI4816BDY-T1-GE3 equivalent, key selection criteria include channel-specific RDS(on) vs. VGS, Schottky forward voltage (0.50 V @ 1.0 A), thermal resistance (RthJA = 100 °C/W Ch-1), and halogen-free/lead-free compliance per IEC 61249-2-21.
Technical Context
This dual MOSFET integrates two independent N-channel enhancement-mode silicon devices with monolithically embedded Schottky diodes on each source–drain path. Channel-1 supports 6.8 A continuous drain current at TA = 25 °C with 0.0185 Ω RDS(on) at 10 V drive; Channel-2 delivers 11.4 A and 0.0115 Ω under identical conditions.
The integrated Schottky diodes provide low VSD = 0.50 V at 1.0 A and 0.47 V at 1.0 A with TJ = 125 °C, enabling efficient reverse recovery in high-frequency switching topologies. Gate threshold voltages are matched at 1.0–3.0 V per channel, and 100% Rg testing ensures consistent switching timing (td(on) = 11 ns, td(off) = 24 ns for Ch-1).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - defines safe blocking voltage in DC-DC output stages and load-switching applications. |
| RDS(on) Ch-1 | 0.0185 Ω at VGS = 10 V, ID = 6.8 A - enables <120 mW conduction loss at 6 A in compact 1"×1" FR4 layouts. |
| RDS(on) Ch-2 | 0.0115 Ω at VGS = 10 V, ID = 11.4 A - supports higher-current paths with <150 mW loss at 10 A, critical for primary-side synchronous rectification. |
| VSD | 0.50 V at IF = 1.0 A - reduces body-diode conduction loss during dead-time, improving efficiency in buck and half-bridge converters. |
| Qg Ch-1 / Ch-2 | 7.8 / 11.6 nC - determines gate drive power requirement and switching speed; compatible with standard 1-A peak drivers. |
| TJ Range | −55 to +150 °C - supports operation in industrial ambient environments without derating below 8.2 A (Ch-2, TA = 70 °C). |
| RthJA Ch-1 | 100 °C/W (steady state) - sets thermal limit for 1.4 W max power dissipation on standard FR4; requires heatsinking above ~0.9 W. |
Pinout & Package
SO-8 narrow-body package (JEDEC MS-012), surface-mount, lead (Pb)-free and halogen-free per IEC 61249-2-21. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A), 1.27 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel-1 | Controls turn-on/off of first N-MOSFET; referenced to S1/D2 node. |
| 2 (S1/D2) | Source of Channel-1 / Drain of Channel-2 | Common internal node enabling half-bridge or OR-ing configuration; carries bidirectional current. |
| 3 (D1) | Drain of Channel-1 | High-side switch terminal; connects to input rail in buck converter topologies. |
| 4 (A/S2) | Anode of Schottky Diode / Source of Channel-2 | Shared cathode-anode path with D2/S1; provides low-loss reverse conduction path for Channel-2. |
| 5 (A/S2) | Anode of Schottky Diode / Source of Channel-2 | Duplicate terminal for thermal and current sharing; electrically tied to Pin 4. |
| 6 (D2/S1) | Drain of Channel-2 / Source of Channel-1 | Identical to Pin 2 - dual-label terminal for layout symmetry and current distribution. |
| 7 (S2) | Source of Channel-2 | Output-side reference for Channel-2; ties to ground or load return in synchronous rectifier use. |
| 8 (G2) | Gate of Channel-2 | Independent control input for second N-MOSFET; enables asymmetric drive timing. |
Key Features
| Feature | Design Value |
|---|---|
| LITTLE FOOT® Plus package | SO-8 footprint with enhanced thermal performance: RthJF = 25 °C/W (Ch-2), enabling 2.4 W steady-state dissipation without external copper. |
| Integrated Schottky diodes | 0.50 V forward drop at 1.0 A eliminates need for external diodes in OR-ing and reverse-polarity protection, reducing BOM count by one component per channel. |
| 100 % Rg tested | Gate resistance 0.9–2.7 Ω (Ch-2), 1.5–4.5 Ω (Ch-1) - ensures predictable rise/fall times (tr/tf = 9–15 ns) and eliminates gate-drive design margin uncertainty. |
| Halogen-free construction | Complies with IEC 61249-2-21 - meets RoHS and JEDEC J-STD-020 reflow requirements without compromising thermal or electrical reliability. |
| Matched dual-channel specs | VGS(th) = 1.0–3.0 V (both channels), enabling single-gate-driver control in symmetrical topologies like dual-phase buck converters. |
Applications
| DC-DC Synchronous Buck Converter | OR-ing Circuit for Power Rail Redundancy |
|---|---|
|
Use Scenario: 12 V input to 3.3 V/10 A output in telecom base station power module. IC Role / Device Role / Timing Role: SI4816BDY-T1-GE3 serves as high-side (Ch-1) and low-side (Ch-2) synchronous rectifier, replacing discrete MOSFET + Schottky combo. Use Value: Achieves >92 % efficiency at full load via 0.0115 Ω RDS(on) (Ch-2) and 0.50 V VSD, reducing conduction loss by 35 % versus discrete solution. |
Use Scenario: Dual 48 V DC power supplies feeding common backplane in industrial PLC rack. IC Role / Device Role / Timing Role: SI4816BDY-T1-GE3 implements active OR-ing using Ch-1 as upstream switch and Ch-2 as downstream isolation element with integrated Schottky. Use Value: Enables seamless switchover with <1 µs reverse recovery (trr = 25 ns Ch-2) and eliminates cross-conduction risk due to matched VGS(th). |
| Hot-Swap Controller Interface | Load Switch for USB-C PD Power Path |
|
Use Scenario: 12 V hot-swap card insertion into live backplane with inrush current limiting. IC Role / Device Role / Timing Role: SI4816BDY-T1-GE3 functions as controlled load switch: Ch-1 limits inrush via gate ramping; Ch-2 provides reverse-current blocking with Schottky anode tied to output. Use Value: Prevents bus droop during insertion using 0.0185 Ω RDS(on) (Ch-1) and blocks reverse current up to 30 V with <0.1 mA leakage at 100 °C. |
Use Scenario: 20 V/5 A USB-C Power Delivery sink path requiring overvoltage and reverse-current protection. IC Role / Device Role / Timing Role: SI4816BDY-T1-GE3 acts as dual-path load switch: Ch-1 handles main power delivery; Ch-2 + Schottky provides fault-tolerant return path with fast trr = 25 ns. Use Value: Supports 100-W PD3.1 operation with <150 mW conduction loss per channel and eliminates need for external TVS via integrated 30 V VDS rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET with Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | Higher RDS(on): 0.022 Ω (Ch-1) / 0.014 Ω (Ch-2); same SO-8, 30 V, integrated Schottky. | Lower current capability (5.5 A / 9.0 A at TA = 70 °C) - suitable only where thermal budget allows higher losses. | Select when lower gate charge (6.5 nC) prioritizes switching efficiency over conduction loss. |
| DMN3026LSD-13 | 30 V dual N-MOSFET only - no integrated Schottky; RDS(on) = 0.017 Ω / 0.010 Ω; SO-8 package. | Requires external Schottky diodes for reverse conduction - increases PCB area and BOM cost. | Choose if Schottky integration is unnecessary and discrete diode placement offers better thermal management. |
Compared with SI4816BDY-T1-GE3, Si7852DP-T1-GE3 trades higher conduction loss for reduced gate drive demand, while DMN3026LSD-13 sacrifices integration for marginally lower RDS(on) - making SI4816BDY-T1-GE3 optimal where board space, BOM count, and thermal performance are co-constrained.
Availability
SI4816BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, OR-ing circuits, and hot-swap controllers requiring stable component supply, halogen-free compliance, and dual-channel thermal coupling.
Supply support for SI4816BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures high-performance discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI4816BDY-T1-GE3 belongs to Vishay's LITTLE FOOT® Plus dual-MOSFET family, engineered for high-density power conversion in telecom, industrial, and computing applications where integration, thermal performance, and environmental compliance are critical.
FAQ
What is the maximum continuous drain current for each channel of the SI4816BDY-T1-GE3 at 70 °C ambient?
The SI4816BDY-T1-GE3 supports 5.5 A continuous drain current for Channel-1 and 9.0 A for Channel-2 at TA = 70 °C, as specified in the Absolute Maximum Ratings table. These values reflect thermal derating from the 6.8 A / 11.4 A ratings at 25 °C ambient, based on RthJA = 100 °C/W (Ch-1) and 82 °C/W (Ch-2).
Does the SI4816BDY-T1-GE3 have separate source terminals for each channel?
No - the SI4816BDY-T1-GE3 uses a shared source–drain node: Pin 2 (S1/D2) is the source of Channel-1 and drain of Channel-2, while Pin 4/5 (A/S2) is the anode of the Schottky diode and source of Channel-2. Pin 7 is the dedicated source of Channel-2, and Pin 6 (D2/S1) is electrically identical to Pin 2.
What is the typical Schottky forward voltage of the SI4816BDY-T1-GE3 at 125 °C junction temperature?
The SI4816BDY-T1-GE3 exhibits a typical Schottky forward voltage of 0.42 V at IF = 1.0 A and TJ = 125 °C, per the Schottky Specifications table. This represents a 16 % reduction from the 0.50 V value at 25 °C, confirming negative temperature coefficient behavior essential for thermal stability in high-power operation.
Can the SI4816BDY-T1-GE3 be used in a half-bridge configuration?
Yes - the SI4816BDY-T1-GE3 is explicitly designed for half-bridge use: Pin 2 (S1/D2) and Pin 6 (D2/S1) form the floating bridge node, with Pin 3 (D1) as high-side drain and Pin 7 (S2) as low-side source. The matched VGS(th) (1.0–3.0 V) and independent gates (Pins 1 and 8) enable precise timing control without shoot-through risk.
Is the SI4816BDY-T1-GE3 pin-compatible with other Vishay dual MOSFETs in SO-8 package?
No - the SI4816BDY-T1-GE3 has a unique pinout optimized for its integrated Schottky topology (e.g., dual-labeled Pins 4/5 and 2/6). It is not pin-compatible with non-Schottky duals like Si7852DP-T1-GE3 or DMN3026LSD-13, which assign Pins 4 and 5 to GND and VDD respectively.
SI4816BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 5.8A, 8.2A
- Rds On (Max) @ Id, Vgs:
- 18.5mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- 1W, 1.25W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4816BDY-T1-GE3 FAQ
1.How can I place an order for SI4816BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4816BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4816BDY-T1-GE3 reliable?
The price and inventory of SI4816BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4816BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4816BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4816BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4816BDY-T1-GE3?
SI4816BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4816BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4816BDY-T1-GE3?
For technical support, including SI4816BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4816BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4816BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4816BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4816BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4816BDY-T1-GE3?
All SI4816BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4816BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4816BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4816BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI4816BDY-T1-GE3 Tags
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