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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4823DY-T1-E3

Name: SI4823DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4823DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4823DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4823DY-T1-E3.pdf

Description:: MOSFET P-CH 20V 4.1A 8SO

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Product details

Overview

SI4823DY-T1-E3 from Vishay Siliconix is a P-channel 20 V MOSFET with integrated Schottky diode in SO-8 package, delivering R_DS(on) = 0.108 Ω at V_GS = −4.5 V, −4.1 A continuous drain current (T_C = 25 °C), and 4 nC total gate charge - optimized for compact boost and buck-boost converters in portable power management.

For engineers reviewing the SI4823DY-T1-E3 datasheet, SI4823DY-T1-E3 pinout, SI4823DY-T1-E3 application, or SI4823DY-T1-E3 equivalent, key selection criteria include its co-packaged Schottky diode (V_F = 0.5 V @ 1 A), low gate charge for high-frequency switching, and thermal performance validated under T_J = 150 °C conditions.

Technical Context

This device integrates a P-channel enhancement-mode MOSFET and a Schottky diode in a single SO-8 package, sharing the drain terminal (Pin 5–8) to enable synchronous rectification in DC-DC topologies. Its gate threshold voltage (V_GS(th) = −0.6 to −1.5 V) supports logic-level drive from 3.3 V controllers.

The MOSFET operates with V_DS = −20 V max and exhibits C_iss = 330–660 pF and Q_gd = 1.4 nC, enabling fast switching with minimal Miller-induced oscillation. The Schottky section provides V_KR = 30 V reverse rating and I_F = 2 A average forward current, with t_rr = 23–35 ns body diode recovery.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - Maximum blocking voltage for high-side switch operation in ≤20 V input rails
R_DS(on)	0.108 Ω @ V_GS = −4.5 V - Enables <100 mW conduction loss at 3.3 A, critical for thermally constrained PCBs
I_D (continuous)	−4.1 A @ T_C = 25 °C - Supports ≥3 W continuous power delivery without forced cooling
Q_g	4 nC @ V_GS = −4.5 V - Reduces gate driver power demand and enables >1 MHz PWM in portable SMPS
V_F (Schottky)	0.5 V @ 1 A - Low forward drop minimizes conduction loss in freewheeling path of boost converters
t_rr	23–35 ns - Fast body diode recovery reduces switching loss and EMI in discontinuous conduction mode
R_thJA	60–71.5 °C/W - Validated on 1" × 1" FR4 board; enables thermal design without heatsink below 1.7 W dissipation

Pinout & Package

SO-8 narrow-body package (JEDEC MS-012), 5.0 mm × 4.0 mm footprint, 1.75 mm max height, lead-free and RoHS-compliant. Thermal pad (Pins 5–8) serves as common drain and primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (MOSFET) / Cathode (Schottky)	Common source node; connects to output rail in high-side switch; cathode ties to load return
5, 6, 7, 8	Drain (MOSFET) / Anode (Schottky)	Shared high-current drain/anode; requires copper pour for thermal and current handling
G (Pin 3)	Gate	Logic-level compatible input; 100 % R_g-tested for consistent switching timing

Key Features

Feature	Design Value
LITTLE FOOT® Plus Schottky integration	Eliminates discrete diode placement and layout mismatch, reducing BOM count and parasitic inductance in boost paths
100 % R_g tested	Ensures gate resistance consistency (1.2–12 Ω), critical for predictable turn-on/turn-off timing across production lots
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated consumer electronics
Low Q_gd/Q_g ratio	Q_gd = 1.4 nC / Q_g = 4 nC → 35 % - suppresses Miller plateau effects, improving hard-switching robustness

Applications

Portable Power Banks	USB-C PD Adapters
Use Scenario: Step-up conversion from single-cell Li-ion (3.0–4.2 V) to 5 V/9 V/15 V USB-C PD output rails. IC Role / Device Role / Timing Role: High-side synchronous rectifier in boost converter, replacing external Schottky to reduce footprint and improve efficiency. Use Value: 0.5 V Schottky V_F and 0.108 Ω R_DS(on) jointly cut conduction loss by ≥15 % vs. discrete MOSFET + diode solution at 2 A load.	Use Scenario: Secondary-side synchronous rectification in isolated flyback or active clamp forward converters. IC Role / Device Role / Timing Role: P-channel MOSFET with integrated Schottky used as self-driven rectifier, leveraging transformer reset voltage for gate control. Use Value: Body diode t_rr = 23–35 ns ensures clean zero-voltage switching transition, reducing EMI and improving light-load efficiency.
Wireless Charging Transmitters	Medical Wearables
Use Scenario: Half-bridge in resonant inverter stage driving Qi-compliant 110–205 kHz transmitter coils. IC Role / Device Role / Timing Role: High-side switch with integrated Schottky providing freewheeling path during dead time. Use Value: 4 nC Q_g enables <50 ns propagation delay with standard gate drivers, supporting precise 500 ns dead-time control.	Use Scenario: Battery protection and load switching in compact implantable or patch-style monitors. IC Role / Device Role / Timing Role: Reverse-polarity protection switch and battery disconnect FET with integrated diode for fail-safe current path. Use Value: −20 V V_DS and −4.1 A I_D support dual-cell LiPo (≤8.4 V) systems while maintaining margin for surge events.

Portable Power Banks

USB-C PD Adapters

Use Scenario: Step-up conversion from single-cell Li-ion (3.0–4.2 V) to 5 V/9 V/15 V USB-C PD output rails.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in boost converter, replacing external Schottky to reduce footprint and improve efficiency.

Use Value: 0.5 V Schottky V_F and 0.108 Ω R_DS(on) jointly cut conduction loss by ≥15 % vs. discrete MOSFET + diode solution at 2 A load.

Use Scenario: Secondary-side synchronous rectification in isolated flyback or active clamp forward converters.

IC Role / Device Role / Timing Role: P-channel MOSFET with integrated Schottky used as self-driven rectifier, leveraging transformer reset voltage for gate control.

Use Value: Body diode t_rr = 23–35 ns ensures clean zero-voltage switching transition, reducing EMI and improving light-load efficiency.

Wireless Charging Transmitters

Medical Wearables

Use Scenario: Half-bridge in resonant inverter stage driving Qi-compliant 110–205 kHz transmitter coils.

IC Role / Device Role / Timing Role: High-side switch with integrated Schottky providing freewheeling path during dead time.

Use Value: 4 nC Q_g enables <50 ns propagation delay with standard gate drivers, supporting precise 500 ns dead-time control.

Use Scenario: Battery protection and load switching in compact implantable or patch-style monitors.

IC Role / Device Role / Timing Role: Reverse-polarity protection switch and battery disconnect FET with integrated diode for fail-safe current path.

Use Value: −20 V V_DS and −4.1 A I_D support dual-cell LiPo (≤8.4 V) systems while maintaining margin for surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET-with-integrated-Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	−30 V V_DS, 0.045 Ω R_DS(on) @ −4.5 V, 8 A I_D, same SO-8 package	Higher voltage/current rating; larger die size increases gate charge (12 nC)	Select when system requires >20 V input tolerance or >4 A continuous current
DMN3026LSD-13	−30 V V_DS, 0.032 Ω R_DS(on) @ −4.5 V, 6.5 A I_D, SO-8 with exposed drain pad	Lower R_DS(on) but no integrated Schottky - requires external diode	Select when Schottky integration is unnecessary and lower conduction loss is prioritized over BOM simplification

Compared with Si7157DP-T1-GE3 and DMN3026LSD-13, SI4823DY-T1-E3 offers optimal balance of integrated Schottky functionality, moderate voltage rating, and ultra-low gate charge - making it uniquely suited for space-constrained, high-frequency boost converters where layout simplicity and EMI reduction are critical.

Availability

SI4823DY-T1-E3 is available at Aetrix Electronics and suitable for portable power banks, USB-C PD adapters, and wireless charging transmitters requiring stable component supply and full traceability.

Supply support for SI4823DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high reliability and power efficiency.

The Si4823DY product line targets portable and battery-powered DC-DC conversion, designed specifically to replace discrete MOSFET + Schottky combinations with a single, thermally optimized, and layout-efficient device.

FAQ

What is the maximum continuous drain current rating for SI4823DY-T1-E3 at 70 °C case temperature?

The SI4823DY-T1-E3 supports −3.3 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under sustained power dissipation; actual usable current depends on PCB copper area and ambient airflow. The SI4823DY-T1-E3 maintains safe operation up to T_J = 150 °C, with R_thJA = 60–71.5 °C/W measured on a 1" × 1" FR4 board.

Does SI4823DY-T1-E3 include a Schottky diode, and what are its key electrical parameters?

Yes, SI4823DY-T1-E3 integrates a Schottky diode rated for 30 V reverse voltage (V_KR) and 2 A average forward current (I_F). Its forward voltage is 0.5 V at 1 A and 25 °C, dropping to 0.41 V at 125 °C. Reverse leakage remains ≤0.1 mA at 30 V and 25 °C, rising to ≤25 mA at 125 °C - confirming suitability for high-efficiency, temperature-stable boost stages.

Can SI4823DY-T1-E3 be driven directly by a 3.3 V microcontroller GPIO?

Yes, SI4823DY-T1-E3 has a gate threshold voltage (V_GS(th)) of −0.6 to −1.5 V and delivers R_DS(on) = 0.108 Ω at V_GS = −4.5 V - meaning it fully enhances with 3.3 V logic drive when used in low-side configuration with inverted gate control. For high-side use, a dedicated level-shifting gate driver is recommended to ensure reliable −4.5 V gate bias relative to source.

What is the thermal resistance from junction to ambient (R_thJA) for SI4823DY-T1-E3, and how is it measured?

The SI4823DY-T1-E3 has a typical R_thJA of 60 °C/W and maximum of 71.5 °C/W, measured per JEDEC JESD51-2 on a 1" × 1" FR4 board with 1 oz copper. This value applies to both MOSFET and Schottky sections. The shared drain pad (Pins 5–8) serves as the primary thermal path; adding solder mask defined thermal vias beneath the pad improves R_thJA by up to 25 % in production layouts.

Is SI4823DY-T1-E3 suitable for synchronous rectification in a 1 MHz boost converter?

Yes, SI4823DY-T1-E3 is well-suited for 1 MHz operation due to its low total gate charge (4 nC @ V_GS = −4.5 V) and fast switching times (t_d(on) = 18–27 ns, t_f = 10–15 ns). Its C_iss = 330–660 pF and Q_gd/Q_g ratio of 35 % minimize Miller effect, enabling clean, jitter-free gate transitions essential for stable high-frequency boost regulation using the SI4823DY-T1-E3.

SI4823DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 108mOhm @ 3.3A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 660 pF @ 10 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.7W (Ta), 2.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4823DY-T1-E3 FAQ

1.How can I place an order for SI4823DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4823DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4823DY-T1-E3 reliable?

The price and inventory of SI4823DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4823DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4823DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4823DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4823DY-T1-E3?

SI4823DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4823DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4823DY-T1-E3?

For technical support, including SI4823DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4823DY-T1-E3 requirements.

6.How does Aetrix verify that SI4823DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4823DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4823DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4823DY-T1-E3?

All SI4823DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4823DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4823DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4823DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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