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Vishay Siliconix SI4823DY-T1-GE3
- Part No.:
- SI4823DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4823DY-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 4.1A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,522
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Product details
Overview
SI4823DY-T1-GE3 from Vishay Siliconix is a P-channel 20 V MOSFET with integrated Schottky diode in SO-8 package, featuring RDS(on) = 0.108 Ω at VGS = −4.5 V, continuous drain current of −4.1 A at TC = 25 °C, and 4 nC typical gate charge - optimized for compact boost and buck-boost converter topologies in portable power management.
For engineers reviewing the SI4823DY-T1-GE3 datasheet, SI4823DY-T1-GE3 pinout, SI4823DY-T1-GE3 application, or SI4823DY-T1-GE3 equivalent, this device is selected for high-efficiency synchronous rectification, low-voltage DC-DC conversion, and space-constrained battery-powered systems requiring integrated body-diode performance and halogen-free compliance.
Technical Context
The SI4823DY-T1-GE3 integrates a P-channel enhancement-mode MOSFET and a co-packaged Schottky diode in a single SO-8 footprint, enabling dual-function operation without external diode placement. Its gate threshold voltage (VGS(th) = −0.6 to −1.5 V) supports logic-level drive from 2.5 V–4.5 V controllers, while its low RDS(on) and 0.5 V forward voltage (at 1 A) minimize conduction losses in both MOSFET and diode conduction modes.
Thermal design is enabled by validated junction-to-foot (RthJF = 35 °C/W typical) and junction-to-ambient (RthJA = 60 °C/W typical) resistances, and its safe operating area supports pulsed drain currents up to −15 A. The device operates across −55 to +150 °C junction temperature range and meets IEC 61249-2-21 halogen-free and RoHS Directive 2002/95/EC requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum blocking voltage for low-voltage synchronous rectifier or high-side switch applications |
| RDS(on) | 0.108 Ω at VGS = −4.5 V - Enables <100 mW conduction loss at 3.3 A continuous current |
| ID (continuous) | −4.1 A at TC = 25 °C - Sustains full-load current in thermally managed PCB layouts |
| Qg | 4 nC at VGS = −4.5 V - Reduces gate drive power and switching loss in high-frequency converters (≥1 MHz) |
| VF (Schottky) | 0.50 V at IF = 1 A - Low forward drop improves efficiency during freewheeling or reverse recovery |
| VSD | −0.8 to −1.2 V at IS = −2.6 A - Confirmed body diode forward voltage for synchronous rectifier dead-time analysis |
| TJ Range | −55 to +150 °C - Supports industrial and extended-temperature portable designs without derating penalties |
Pinout & Package
SO-8 (Narrow, JEDEC MS-012), surface-mount package with exposed drain pad (pins 1–4 = source, pins 5–8 = drain, pin 3 = gate, pin 6 = Schottky anode, pin 7 = Schottky cathode). Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (MOSFET) | Common source node for P-channel channel conduction; electrically tied to Schottky cathode |
| 5, 6, 7, 8 | Drain (MOSFET) / Anode (Schottky) | Shared drain terminal; connects to input rail in buck topology or output rail in boost |
| 3 | Gate | Control terminal for MOSFET turn-on/turn-off; requires negative VGS relative to source |
| 6 | Schottky Anode | Internally connected to drain; used for Schottky forward conduction path |
| 7 | Schottky Cathode | Internally connected to source; completes Schottky freewheeling path |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky Diode | Co-packaged 30 V, 2 A Schottky with 0.5 V VF enables seamless freewheeling without external diode layout or parasitic inductance |
| LITTLE FOOT® Plus Construction | Optimized SO-8 thermal and electrical performance with enhanced drain pad thermal coupling for improved power dissipation |
| 100 % Rg Tested | Guarantees gate resistance ≤ 12 Ω, ensuring predictable turn-on/turn-off timing and reducing gate driver stress |
| Halogen-Free & RoHS Compliant | Meets IEC 61249-2-21 and EU Directive 2002/95/EC - suitable for consumer and medical portable devices |
| Low Qgd/Qg Ratio | Qgd = 1.4 nC / Qg = 4 nC → 35 % - improves hard-switching EMI behavior and reduces Miller-induced shoot-through risk |
Applications
| Portable Boost Converter | USB Power Delivery Sink |
|---|---|
Use Scenario: Step-up conversion from single-cell Li-ion (2.7–4.2 V) to 5 V USB output in wireless earbuds or wearables. IC Role / Device Role / Timing Role: Synchronous rectifier switch in CCM boost topology, conducting during low-side switch off-time. Use Value: Integrated Schottky eliminates external diode, reducing BOM count and PCB area; 0.108 Ω RDS(on) limits conduction loss to <0.4 W at 2 A load. |
Use Scenario: Input protection and reverse-current blocking in 5 V/3 A USB PD sink circuits with dynamic load steps. IC Role / Device Role / Timing Role: High-side reverse-polarity and backfeed protection switch placed between input connector and DC-DC controller. Use Value: −20 V VDS rating withstands USB transient surges; −4.1 A ID handles peak 3 A loads without thermal throttling on 1" × 1" FR4. |
| Battery-Powered Buck-Boost Regulator | Low-Voltage Logic-Level Load Switch |
Use Scenario: Wide-input (2.5–5.5 V) buck-boost regulator powering 3.3 V MCU and sensors in handheld test equipment. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in four-switch buck-boost, conducting during high-side MOSFET off-time. Use Value: 4 nC Qg allows clean 1.2 MHz switching with minimal gate drive loss; VGS(th) ≤ −1.5 V ensures reliable turn-on from 3.3 V GPIO. |
Use Scenario: Controlled power sequencing for FPGA I/O banks or display backlight drivers in portable instrumentation. IC Role / Device Role / Timing Role: P-channel high-side load switch with integrated body diode for inrush control and reverse-current blocking. Use Value: −0.8 V VSD limits dropout voltage under 2.6 A load; SO-8 footprint simplifies layout versus discrete MOSFET + Schottky solution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | −30 V VDS, 0.055 Ω RDS(on) at −4.5 V, higher 7.5 nC Qg, same SO-8 package | Better voltage margin and lower RDS(on), but higher gate drive demand and cost | Select when >20 V input transients or <50 mΩ conduction loss is required; verify gate driver capability for 7.5 nC |
| DMG2305UVT-7 | −20 V VDS, 0.052 Ω RDS(on) at −4.5 V, no integrated Schottky, SOT-23-6 package | Lower RDS(on) and smaller footprint, but requires external Schottky for freewheeling | Select when board space is critical and external diode placement is acceptable; not drop-in due to package and missing diode |
Compared with Si7851DP-T1-GE3 and DMG2305UVT-7, the SI4823DY-T1-GE3 uniquely balances low gate charge (4 nC), integrated Schottky functionality, and halogen-free compliance in SO-8 - making it optimal for cost-sensitive, space-constrained portable boost/buck-boost where diode integration reduces layout complexity and improves reliability.
Availability
SI4823DY-T1-GE3 is available at Aetrix Electronics and suitable for portable boost converters, USB power delivery sinks, and battery-powered buck-boost regulators requiring stable component supply, halogen-free compliance, and integrated Schottky performance.
Supply support for SI4823DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency, thermal performance, and reliability.
The SI4823DY-T1-GE3 belongs to Vishay's LITTLE FOOT® Plus family - engineered specifically for high-density portable power conversion, where integrated Schottky diodes, low gate charge, and halogen-free packaging address thermal, EMI, and regulatory constraints in handheld and wearable electronics.
FAQ
What is the maximum continuous drain current for SI4823DY-T1-GE3 at 70 °C case temperature?
The SI4823DY-T1-GE3 supports −3.3 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be verified against actual PCB copper area and airflow conditions in the final design.
Does SI4823DY-T1-GE3 include a Schottky diode, and what are its rated parameters?
Yes, the SI4823DY-T1-GE3 integrates a Schottky diode rated for 30 V reverse voltage (VKA) and 2 A average forward current (IF). Its forward voltage is 0.50 V at 1 A and 25 °C, with leakage current ≤ 0.1 mA at 30 V reverse bias and 25 °C - confirmed in the Schottky Specifications section of the datasheet.
Is SI4823DY-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
The SI4823DY-T1-GE3 uses a standard SO-8 (MS-012) footprint with pin 1–4 as source, pin 5–8 as drain, and pin 3 as gate - matching conventional P-channel SO-8 layouts. However, its internal Schottky anode/cathode connection (pins 6 and 7) differs from discrete MOSFETs, so PCB layout must accommodate the integrated diode path and avoid shorting unintended terminals.
What is the gate threshold voltage range for SI4823DY-T1-GE3, and how does it affect drive requirements?
The SI4823DY-T1-GE3 has a gate threshold voltage (VGS(th)) range of −0.6 V to −1.5 V at ID = −250 µA. This logic-level compatibility enables direct drive from 2.5 V or 3.3 V microcontrollers without level-shifting, provided the gate is pulled below source potential - critical for reliable turn-on in high-side or floating-gate configurations.
How does the thermal resistance of SI4823DY-T1-GE3 impact its power dissipation in handheld designs?
The SI4823DY-T1-GE3 has a typical junction-to-ambient thermal resistance (RthJA) of 60 °C/W on a 1" × 1" FR4 board. At 1.7 W maximum power dissipation (TA = 25 °C), this yields a ~102 °C junction rise - well within the 150 °C limit. For handheld use, ensure ≥1 cm² of 2-oz copper pour under the exposed drain pad to maintain safe operating temperature during sustained 3 A loads.
SI4823DY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 108mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 660 pF @ 10 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 1.7W (Ta), 2.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4823DY-T1-GE3 FAQ
1.How can I place an order for SI4823DY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4823DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4823DY-T1-GE3 reliable?
The price and inventory of SI4823DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4823DY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4823DY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4823DY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4823DY-T1-GE3?
SI4823DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4823DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4823DY-T1-GE3?
For technical support, including SI4823DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4823DY-T1-GE3 requirements.
6.How does Aetrix verify that SI4823DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4823DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4823DY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4823DY-T1-GE3?
All SI4823DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4823DY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4823DY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4823DY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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