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Vishay Siliconix SI4831BDY-T1-E3
- Part No.:
- SI4831BDY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4831BDY-T1-E3.pdf
- Description:
- MOSFET P-CH 30V 6.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,588
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Product details
Overview
SI4831BDY-T1-E3 from Vishay Siliconix is a P-channel -30 V drain-source MOSFET integrated with a monolithic Schottky diode in a single SO-8 package, delivering RDS(on) = 0.042 Ω at VGS = -10 V and 0.065 Ω at VGS = -4.5 V, rated for -6.6 A continuous drain current (TC = 25 °C), and used in asynchronous rectification circuits for HDD power stages.
For engineers reviewing the SI4831BDY-T1-E3 datasheet, SI4831BDY-T1-E3 pinout, SI4831BDY-T1-E3 application, or SI4831BDY-T1-E3 equivalent, key selection criteria include verified body diode recovery (trr = 30–45 ns), guaranteed gate resistance (Rg tested 100%), and thermal performance (RthJA = 62.5 °C/W max) under FR4 mounting conditions.
Technical Context
This device integrates a P-channel enhancement-mode MOSFET and a Schottky diode on a single die, sharing source and drain terminals. The MOSFET exhibits gate threshold voltage VGS(th) = -1 to -3 V and total gate charge Qg = 7.8 nC (at VGS = -4.5 V), enabling efficient low-voltage gate drive in synchronous/asynchronous buck topologies.
The co-packaged Schottky diode provides VF = 0.53 V at 3 A and reverse leakage IRM ≤ 0.1 mA at 30 V and 25 °C, with junction capacitance CT = 102 pF at 15 V - optimized for high-frequency switching and reduced reverse recovery loss versus bipolar diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V maximum drain-source voltage - defines safe blocking capability in negative-rail DC-DC stages |
| RDS(on) | 0.042 Ω at VGS = -10 V - enables <100 mW conduction loss at 5 A, critical for thermal management in compact HDD designs |
| ID (cont.) | -6.6 A at TC = 25 °C - sets peak steady-state current handling without derating in heatsinked applications |
| Qg | 7.8 nC at VGS = -4.5 V - determines gate drive energy and switching speed in 3.3 V/5 V control environments |
| trr | 30–45 ns body diode reverse recovery time - minimizes switching loss and EMI during freewheeling in buck converters |
| VF (Schottky) | 0.53 V at 3 A - reduces forward conduction loss by ~40% vs. standard PN diodes, improving efficiency in low-VOUT rails |
| RthJA | 62.5 °C/W max - establishes worst-case junction temperature rise on standard FR4 PCB, guiding thermal layout decisions |
Pinout & Package
SI4831BDY-T1-E3 uses the industry-standard SO-8 surface-mount package (5.0 mm × 6.0 mm × 1.75 mm height), with exposed drain pad for enhanced thermal dissipation. Pin numbering follows JEDEC MS-012AA, top-view orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal for MOSFET channel; requires stable -10 V or -4.5 V bias to achieve specified RDS(on) |
| 2 (S) | Source | Common reference node for MOSFET and Schottky anode; connects to output rail or ground return path |
| 3 (S) | Source | Second source connection - electrically tied internally to Pin 2 for lower parasitic inductance in high-dI/dt paths |
| 4 (S) | Source | Third source connection - bonded to internal source metallization to reduce effective source inductance |
| 5 (D) | Drain | Main current-carrying terminal for both MOSFET and Schottky cathode; thermally connected to exposed pad |
| 6 (D) | Drain | Second drain connection - parallel path to Pin 5, lowering RDS(on) and thermal resistance to PCB copper |
| 7 (D) | Drain | Third drain connection - enhances current sharing and thermal spreading across SO-8 footprint |
| 8 (D) | Drain | Fourth drain connection - completes quad-drain configuration for minimized package inductance and improved EMI behavior |
Key Features
| Feature | Design Value |
|---|---|
| LITTLE FOOT® Plus construction | SO-8 footprint with enhanced thermal pad and quad-drain layout - delivers 3.3 W power dissipation at TC = 25 °C |
| 100 % Rg tested | Guaranteed gate resistance of 7–14 Ω - ensures consistent switching timing and eliminates need for external gate resistors in most designs |
| Monolithic Schottky integration | Shared drain/source terminals with matched thermal coupling - eliminates discrete diode placement error and reduces board area by >30% |
| Halogen-free per IEC 61249-2-21 | Compliant with RoHS and green manufacturing standards - supports environmental compliance without performance trade-offs |
| Body diode trr = 30–45 ns | Fast recovery enables operation up to 1 MHz in buck converters - avoids shoot-through risk and reduces snubber requirements |
Applications
| HDD Power Stage | Asynchronous Buck Converter |
|---|---|
|
Use Scenario: Primary FET in 12 V-to-5 V or 12 V-to-3.3 V buck regulator supplying spindle motor and logic circuitry in 2.5-inch hard disk drives. IC Role / Device Role / Timing Role: High-side P-channel switch with integrated Schottky freewheeling diode - replaces discrete MOSFET + diode pair. Use Value: Reduces component count by one part, lowers conduction loss via 0.042 Ω RDS(on), and improves reliability through monolithic thermal coupling between switch and diode. |
Use Scenario: Low-side synchronous rectifier replacement in isolated flyback or non-synchronous buck converters where gate drive complexity must be minimized. IC Role / Device Role / Timing Role: Asynchronous rectifier with fast-recovery body diode - conducts during MOSFET off-time without requiring complementary gate signal. Use Value: Eliminates need for separate gate driver IC and timing control, while maintaining trr < 45 ns to limit switching loss at 500 kHz–1 MHz frequencies. |
| Hot-Swap Protection Circuit | Reverse Polarity Protection |
|
Use Scenario: Inrush current limiter and fault isolation element in 5 V/12 V hot-swap modules for server backplanes and telecom line cards. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode controller - blocks reverse current and limits surge during plug-in events. Use Value: Leverages -30 V VDS rating and -6.6 A ID to withstand 150 % overload for 10 s, with integrated Schottky preventing latch-up during transient overvoltage. |
Use Scenario: Input protection for industrial sensors and embedded controllers powered from unregulated 12 V or 24 V DC supplies subject to accidental polarity reversal. IC Role / Device Role / Timing Role: Reverse-blocking switch - placed in series with supply rail, conducting only when polarity is correct. Use Value: Uses inherent P-channel structure to block reverse voltage up to -30 V, while Schottky diode remains inactive, ensuring zero forward drop in normal operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si4830BDY-T1-E3 | VDS = -30 V, RDS(on) = 0.032 Ω @ -10 V, but no integrated Schottky diode - requires external diode for freewheeling | Suitable only where discrete diode placement is acceptable and lower RDS(on) justifies added BOM and layout complexity | Select Si4830BDY-T1-E3 if conduction loss dominates design and thermal margin allows external diode; otherwise retain SI4831BDY-T1-E3 for integration benefit |
| DMN3020LSD-13 | P-channel -30 V MOSFET in SO-8 with Schottky, but RDS(on) = 0.045 Ω @ -10 V and trr = 60 ns - higher switching loss and slower recovery | Acceptable in <300 kHz applications where lower cost outweighs efficiency penalty; not recommended for 1 MHz HDD rails | Choose DMN3020LSD-13 only for cost-sensitive, low-frequency applications; SI4831BDY-T1-E3 remains preferred for high-efficiency, high-frequency use cases |
Compared with Si4830BDY-T1-E3 and DMN3020LSD-13, SI4831BDY-T1-E3 uniquely balances low RDS(on), fast trr, and monolithic integration - making it optimal for space-constrained, high-frequency asynchronous rectification where BOM reduction and thermal coupling matter.
Availability
SI4831BDY-T1-E3 is available at Aetrix Electronics and suitable for HDD power stages, asynchronous buck converters, hot-swap protection circuits, and reverse polarity protection systems requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SI4831BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high reliability, thermal performance, and application-specific integration.
The SI4831BDY-T1-E3 belongs to Vishay's LITTLE FOOT® Plus MOSFET family, engineered for high-density power conversion in storage, computing, and industrial systems where combined switching efficiency and board-space savings are critical.
FAQ
What is the maximum continuous drain current rating for SI4831BDY-T1-E3 at TC = 25 °C?
The SI4831BDY-T1-E3 is rated for -6.6 A continuous drain current at case temperature TC = 25 °C, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB copper area for heat dissipation and reflects the device's capability under steady-state thermal conditions without derating.
Does SI4831BDY-T1-E3 include a built-in Schottky diode, and what is its forward voltage?
Yes, SI4831BDY-T1-E3 integrates a monolithic Schottky diode with a typical forward voltage VF of 0.53 V at 3 A and 25 °C. This diode shares the same drain and source terminals as the MOSFET, enabling true single-component asynchronous rectification without external parts.
What is the gate threshold voltage range for SI4831BDY-T1-E3, and how does it affect drive requirements?
The gate threshold voltage VGS(th) for SI4831BDY-T1-E3 is specified from -1 V to -3 V at ID = -250 µA. This relatively low magnitude allows reliable turn-on with standard -4.5 V or -10 V gate drive, supporting compatibility with common logic-level and dedicated gate drivers in low-voltage power stages.
Is SI4831BDY-T1-E3 lead-free and halogen-free?
SI4831BDY-T1-E3 is lead-free per JEDEC J-STD-609, and the "-E3" suffix confirms Pb-free termination. However, it is not halogen-free - that variant is designated Si4831BDY-T1-GE3. The -E3 version complies with RoHS but contains halogenated flame retardants per standard FR4 PCB processing.
What is the thermal resistance from junction to ambient (RthJA) for SI4831BDY-T1-E3 on FR4 board?
The maximum junction-to-ambient thermal resistance RthJA for SI4831BDY-T1-E3 is 62.5 °C/W when mounted on a standard FR4 PCB with minimal copper area, as defined in the Thermal Resistance Ratings table. This value guides minimum PCB copper requirements to maintain TJ ≤ 150 °C under full load.
SI4831BDY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 625 pF @ 15 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2W (Ta), 3.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4831BDY-T1-E3 FAQ
1.How can I place an order for SI4831BDY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4831BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4831BDY-T1-E3 reliable?
The price and inventory of SI4831BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4831BDY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4831BDY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4831BDY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4831BDY-T1-E3?
SI4831BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4831BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4831BDY-T1-E3?
For technical support, including SI4831BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4831BDY-T1-E3 requirements.
6.How does Aetrix verify that SI4831BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4831BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4831BDY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4831BDY-T1-E3?
All SI4831BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4831BDY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4831BDY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4831BDY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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