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Vishay Siliconix SI4831BDY-T1-GE3
- Part No.:
- SI4831BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4831BDY-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 6.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,422
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Product details
Overview
SI4831BDY-T1-GE3 from Vishay Siliconix is a P-channel 30-V MOSFET with integrated Schottky diode in SO-8 package, featuring RDS(on) = 0.042 Ω at VGS = −10 V, continuous drain current of −6.6 A (TC = 25 °C), and 7.8 nC total gate charge - optimized for asynchronous rectification in HDD power stages.
For engineers reviewing the SI4831BDY-T1-GE3 datasheet, SI4831BDY-T1-GE3 pinout, SI4831BDY-T1-GE3 application, or SI4831BDY-T1-GE3 equivalent, key selection criteria include its dual-function integration (MOSFET + Schottky), halogen-free/lead-free compliance, low RDS(on) at −4.5 V gate drive, and thermal resistance RthJA = 62.5 °C/W for surface-mount FR4 board designs.
Technical Context
This device integrates a P-channel enhancement-mode MOSFET and a co-packaged Schottky diode sharing source and drain terminals, enabling synchronous/asynchronous rectification without external diode placement. Its gate threshold voltage range (−1 V to −3 V) supports logic-level drive, while body diode VSD = −0.78 V at −1.4 A ensures low conduction loss during reverse recovery.
The SO-8 package provides dual heat-sinking paths via drain pad (RthJF = 37 °C/W max) and ambient (RthJA = 62.5 °C/W max), and its 100% Rg tested gate resistance (7–14 Ω) guarantees consistent switching timing - critical for high-efficiency DC-DC converters operating up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V - maximum blocking voltage for low-voltage buck converter high-side or load-switch applications |
| RDS(on) | 0.042 Ω @ VGS = −10 V - enables <150 mW conduction loss at 6 A, reducing thermal stress in compact layouts |
| ID (cont) | −6.6 A @ TC = 25 °C - supports sustained current delivery in HDD spindle motor drivers and hot-swap circuits |
| Qg | 7.8 nC @ VGS = −4.5 V - allows fast turn-on with low gate-drive power, suitable for 500 kHz–1 MHz switching |
| VF (Schottky) | 0.53 V @ IF = 3 A - minimizes forward drop in freewheeling path, improving efficiency over standard PN diodes |
| RthJA | 62.5 °C/W - defines thermal derating on standard FR4; requires ≤2 W dissipation for TJ ≤ 150 °C at 25 °C ambient |
| trr | 30–45 ns - ultrafast recovery enables clean switching in discontinuous conduction mode (DCM) topologies |
Pinout & Package
SI4831BDY-T1-GE3 uses a standard SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows JEDEC MS-012AC, with pins 1–4 on left side and 5–8 on right side (top view).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls MOSFET channel conduction; accepts −10 V or −4.5 V logic-level drive with 7–14 Ω internal gate resistance |
| 2 (S) | Source | Common reference node for MOSFET and Schottky anode; connects to system ground or negative rail |
| 3 (D) | Drain | Shared terminal for MOSFET drain and Schottky cathode; electrically tied to exposed pad for thermal conduction |
| 4 (S) | Source | Second source connection - internally bonded to pin 2 for low-inductance parallel routing |
| 5 (D) | Drain | Second drain connection - internally bonded to pin 3 and exposed pad for enhanced thermal transfer |
| 6 (D) | Drain | Third drain connection - reinforces thermal path and reduces package inductance in high-di/dt applications |
| 7 (D) | Drain | Fourth drain connection - further lowers RthJF to 37 °C/W max and improves current sharing uniformity |
| 8 (K) | Schottky Cathode | Internally connected to drain; serves as output node for Schottky function in freewheeling or clamping roles |
Key Features
| Feature | Design Value |
|---|---|
| LITTLE FOOT® Plus construction | SO-8 footprint with enhanced thermal pad and multiple drain pins - delivers 3.3 W power dissipation at TC = 25 °C |
| Integrated Schottky diode | Co-packaged 30 V / 3 A Schottky (VF = 0.53 V) eliminates discrete diode placement and layout parasitics |
| 100% Rg tested | Guaranteed gate resistance between 7 Ω and 14 Ω - ensures predictable td(on)/tf timing across production lots |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS - qualified for automotive and industrial environments requiring green material compliance |
| Low Qgd/Qg ratio | Qgd = 3.5 nC / Qg = 7.8 nC → 45% - suppresses Miller-induced shoot-through in half-bridge configurations |
Applications
| HDD Spindle Motor Driver | Asynchronous Rectifier in DC-DC Converters |
|---|---|
Use Scenario: Driving brushed DC spindle motors in 2.5″ and 3.5″ hard disk drives with bidirectional current control and regenerative braking. IC Role / Device Role / Timing Role: P-channel MOSFET switch with integrated Schottky for flyback energy recirculation during PWM off-time. Use Value: VSD = −0.78 V body diode and 0.042 Ω RDS(on) reduce conduction losses by >25% vs. discrete MOSFET+diode solutions at 5 A. | Use Scenario: Freewheeling path in non-synchronous buck converters powering CPU core rails or FPGA I/O banks. IC Role / Device Role / Timing Role: Integrated Schottky replaces external diode; MOSFET blocks reverse current during high-side switch conduction. Use Value: 30 ns trr and 0.53 V VF cut switching losses by ~18% compared to standard 30 V Schottky diodes at 3 A. |
| Hot-Swap Controller Back-Drive Protection | Load Switch for Industrial Sensors |
Use Scenario: Preventing back-feeding from powered downstream modules into upstream supplies during hot-insertion sequences. IC Role / Device Role / Timing Role: Reverse-polarity protection switch with fast turn-off (tf = 7–14 ns) to interrupt fault currents before fuse activation. Use Value: −30 V VDS rating and −30 A pulsed drain current (IDM) support robust 12 V/24 V industrial backplane protection. | Use Scenario: Enabling/disabling 5 V or 3.3 V power to analog sensor subsystems in programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: Low-RDS(on) P-channel load switch with integrated body diode for reverse-current blocking. Use Value: RDS(on) = 0.065 Ω @ −4.5 V enables <20 mW loss at 200 mA - extends battery life and avoids thermal derating in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | Same SO-8 package; lower RDS(on) (0.022 Ω @ −10 V) but no integrated Schottky - requires external diode | Higher efficiency in high-current (>8 A) apps, but adds BOM cost and layout area | Select when gate drive is ≥−10 V and discrete diode integration is acceptable |
| IRF7478PBF | SO-8 P-channel MOSFET with body diode only; no Schottky - higher VSD (−1.2 V) and slower trr (90 ns) | Lower cost, but unsuitable for high-frequency asynchronous rectification due to recovery loss | Select only for low-frequency (<200 kHz), low-current (<2 A) load-switch applications |
Compared with SI4831BDY-T1-GE3, Si7157DP-T1-GE3 offers better conduction performance but lacks integrated Schottky functionality, while IRF7478PBF trades off efficiency and speed for cost - making SI4831BDY-T1-GE3 optimal for space-constrained, high-frequency asynchronous rectifiers where diode integration is mandatory.
Availability
SI4831BDY-T1-GE3 is available at Aetrix Electronics and suitable for HDD spindle motor drivers, asynchronous rectifiers in DC-DC converters, and hot-swap controller back-drive protection requiring stable component supply and full halogen-free compliance.
Supply support for SI4831BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si4831BDY product line targets high-density power management in storage and computing systems, delivering integrated MOSFET-Schottky solutions that reduce board area and improve thermal performance in space-limited applications.
FAQ
What is the maximum continuous drain current for SI4831BDY-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SI4831BDY-T1-GE3 is −5.2 A at TC = 70 °C, per Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be verified against actual PCB layout and airflow conditions in the final design using SI4831BDY-T1-GE3.
Does SI4831BDY-T1-GE3 include a true Schottky diode or only a MOSFET body diode?
SI4831BDY-T1-GE3 integrates a dedicated Schottky diode rated for −30 V reverse voltage and −3 A average forward current, separate from the MOSFET's intrinsic body diode. The Schottky VF is 0.53 V at 3 A, significantly lower than the body diode's VSD = −0.78 V, confirming it is a co-packaged discrete Schottky junction - a key feature documented in the Schottky Product Summary section of the SI4831BDY-T1-GE3 datasheet.
What is the gate threshold voltage range for SI4831BDY-T1-GE3, and how does it affect drive requirements?
The gate threshold voltage (VGS(th)) for SI4831BDY-T1-GE3 is specified from −1 V to −3 V at ID = −250 µA, enabling reliable turn-on with −4.5 V logic-level gate drive. This range ensures compatibility with standard 3.3 V and 5 V microcontroller outputs when used with level-shifting circuitry, and is confirmed in the MOSFET Specifications table of the SI4831BDY-T1-GE3 datasheet.
Can SI4831BDY-T1-GE3 be used in synchronous rectification topologies?
No - SI4831BDY-T1-GE3 is not suitable for synchronous rectification because it contains only a P-channel MOSFET and cannot be actively driven in the low-side position required for synchronous operation. Its integrated Schottky diode and P-channel configuration are specifically designed for asynchronous rectification, as stated in the Applications section of the SI4831BDY-T1-GE3 documentation.
What is the thermal resistance from junction to foot (RthJF) for SI4831BDY-T1-GE3, and why does it matter?
The maximum junction-to-foot thermal resistance (RthJF) for SI4831BDY-T1-GE3 is 37 °C/W, measured from die to the exposed drain pad. This parameter is critical for heatsink attachment - when the SO-8 drain pad is soldered to a copper pour or external heatsink, RthJF dominates thermal performance over RthJA, allowing higher power dissipation than ambient-limited operation. This value is explicitly listed in the Thermal Resistance Ratings table for SI4831BDY-T1-GE3.
SI4831BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 625 pF @ 15 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2W (Ta), 3.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4831BDY-T1-GE3 FAQ
1.How can I place an order for SI4831BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4831BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4831BDY-T1-GE3 reliable?
The price and inventory of SI4831BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4831BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4831BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4831BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4831BDY-T1-GE3?
SI4831BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4831BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4831BDY-T1-GE3?
For technical support, including SI4831BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4831BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4831BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4831BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4831BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4831BDY-T1-GE3?
All SI4831BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4831BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4831BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4831BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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