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Vishay Siliconix SI4831DY-T1-E3
- Part No.:
- SI4831DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4831DY-T1-E3.pdf
- Description:
- MOSFET P-CH 30V 5A 8-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:7,882
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Product details
Overview
SI4831DY-T1-E3 from Vishay Siliconix is a P-channel 30-V MOSFET with integrated Schottky diode in SO-8 package, featuring rDS(on) = 45 mΩ @ VGS = –10 V, continuous drain current of 5 A, and Schottky forward voltage of 0.53 V @ 3 A. It serves as a synchronous rectifier or high-side switch in DC-DC converters and load switches.
For engineers reviewing the SI4831DY-T1-E3 datasheet, SI4831DY-T1-E3 pinout, SI4831DY-T1-E3 application, or SI4831DY-T1-E3 equivalent, key selection criteria include its dual-function integration (MOSFET + Schottky), low gate threshold (–1.0 V typ), thermal resistance (RthJA = 82 °C/W), and SO-8 footprint compatibility with standard PCB layout practices.
Technical Context
This device integrates a P-channel enhancement-mode MOSFET and a co-packaged Schottky diode sharing source and drain terminals, enabling bidirectional conduction control and reverse recovery elimination in buck converter synchronous rectification. Its gate threshold voltage (VGS(th) = –1.0 V typ) supports logic-level drive from 3.3 V or 5 V controllers.
The SO-8 package provides separate thermal footprints for MOSFET and Schottky die, with measured RthJF values of 27 °C/W (MOSFET) and 32 °C/W (Schottky), allowing independent thermal management in high-current power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –30 V - Maximum blocking voltage for high-side switching in ≤24 V systems |
| rDS(on) | 45 mΩ @ VGS = –10 V - Enables <150 mW conduction loss at 5 A DC |
| ID (continuous) | 5 A @ TA = 25 °C - Supports compact 5–6 A DC-DC output stages with FR4 board mounting |
| VF (Schottky) | 0.53 V @ IF = 3 A - Reduces forward drop by ~0.2 V vs. body diode, cutting rectifier losses |
| VGS(th) | –1.0 V (typ) - Ensures turn-on with 3.3 V GPIO or PWM controller outputs |
| Qg | 10–20 nC - Determines gate drive power requirement for ≤1 MHz switching |
| RthJA | 82 °C/W (MOSFET, steady-state) - Sets max power dissipation to 1.28 W at 70 °C ambient |
Pinout & Package
SO-8 surface-mount package with exposed thermal pad on underside (not electrically connected); pin 1 marked by notch or dot; pins 1–4 and 5–8 form two isolated terminal groups for MOSFET and Schottky sections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls MOSFET channel; requires negative bias relative to source to conduct |
| 2 (S) | Source (MOSFET) / Cathode (Schottky) | Common reference node; connects to input rail in high-side switch configuration |
| 3 (D) | Drain (MOSFET) / Anode (Schottky) | Power output node; carries load current and reverse recovery-free freewheeling current |
| 4 (S) | Source (MOSFET) | Redundant source connection for lower inductance; tied internally to pin 2 |
| 5 (K) | Cathode (Schottky) | Electrically tied to pin 2; enables shared cathode routing in synchronous rectifier layouts |
| 6 (A) | Anode (Schottky) | Electrically tied to pin 3; allows single-node connection to output capacitor or inductor |
| 7 (S) | Source (MOSFET) | Third source tie; reduces bond wire inductance in high-di/dt applications |
| 8 (D) | Drain (MOSFET) | Second drain tie; improves current sharing and thermal spreading under pulsed loads |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky diode | Eliminates reverse recovery charge (trr = 35–70 ns), enabling efficient >500 kHz synchronous rectification |
| Low VGS(th) | –1.0 V typical threshold ensures reliable turn-on with 3.3 V microcontroller GPIO or PWM drivers |
| Dual-source/drain terminals | Reduces package inductance by 30% vs. single-terminal SO-8, critical for EMI-sensitive DC-DC designs |
| Separate thermal paths | RthJF = 27 °C/W (MOSFET) and 32 °C/W (Schottky) allow independent copper pour optimization per die |
| Logic-level compatible | Full 5 A rating achievable at VGS = –4.5 V (rDS(on) = 90 mΩ), supporting industrial 5 V control rails |
Applications
| DC-DC Synchronous Rectifier | High-Side Load Switch |
|---|---|
Use Scenario: Secondary-side rectification in 12 V input buck converters delivering 3.3 V/5 V at up to 6 A. IC Role / Device Role / Timing Role: P-channel MOSFET + Schottky replaces discrete body diode and external Schottky, operating in phase with primary-side switch. Use Value: Cuts conduction loss by 40% vs. standard MOSFET-only solution due to 0.53 V VF and no trr-related switching loss. | Use Scenario: Hot-swap or inrush-controlled power delivery to FPGA core rails or USB PD sink circuits. IC Role / Device Role / Timing Role: High-side switch with integrated reverse polarity protection via Schottky anode-cathode orientation. Use Value: Prevents backfeed during hot-plug events without adding external diode; 5 A rating supports 25 W loads at 5 V. |
| Automotive Body Control Module | Industrial PLC I/O Driver |
Use Scenario: Power distribution to solenoids, LED arrays, and sensors in 24 V vehicle subsystems. IC Role / Device Role / Timing Role: P-channel high-side driver with built-in reverse-battery protection using Schottky clamping. Use Value: Withstands –30 V transients and blocks reverse battery connection without external TVS or diode. | Use Scenario: Isolated 24 V DC output stage driving relay coils or analog sensor excitation circuits. IC Role / Device Role / Timing Role: Robust high-side switch with 30 V blocking and 5 A surge capability for inductive load switching. Use Value: Integrated Schottky absorbs inductive kickback energy, eliminating need for external flyback diode and saving board space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET + Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si4830DY-T1-E3 | rDS(on) = 60 mΩ @ –10 V; same SO-8 package and Schottky integration | Lower current rating (4 A vs. 5 A) limits use in >4 A DC-DC outputs | Select when thermal budget allows higher conduction loss or cost sensitivity outweighs 1 A current margin |
| IRF7607TRPBF | N-channel dual MOSFET (no Schottky); 30 V, 4.7 A, 52 mΩ @ –10 V; SO-8 | Requires high-side gate driver or bootstrap circuit; no integrated diode recovery benefit | Choose only if N-channel topology is fixed and external Schottky can be added separately |
Compared with SI4831DY-T1-E3, Si4830DY-T1-E3 trades 1 A current capacity for slightly lower cost, while IRF7607TRPBF offers N-channel flexibility but demands additional drive complexity and loses Schottky advantages in efficiency-critical rectification.
Availability
SI4831DY-T1-E3 is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, and industrial PLC I/O modules requiring stable component supply and qualified AEC-Q200–compatible discrete power devices.
Supply support for SI4831DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SI48xx family targets high-density power conversion where integration of MOSFET and Schottky in one SO-8 package reduces board area and improves thermal performance over discrete solutions.
FAQ
What is the maximum continuous drain current for SI4831DY-T1-E3 at 70 °C ambient?
The SI4831DY-T1-E3 supports 3.9 A continuous drain current at TA = 70 °C, derated from 5 A at 25 °C per its SO-8 thermal characteristics on FR4 board. This value assumes surface mounting with standard 1 oz copper and no additional heatsinking. The SI4831DY-T1-E3 datasheet specifies this limit under "Continuous Drain Current (TJ = 150 °C)" conditions.
Does SI4831DY-T1-E3 have a specified reverse recovery time for its integrated Schottky diode?
No - the SI4831DY-T1-E3 does not specify reverse recovery time (trr) for the Schottky diode because Schottky junctions are majority-carrier devices with negligible stored charge. Instead, the datasheet provides source-drain reverse recovery time (trr = 35–70 ns) for the MOSFET's body diode, which is irrelevant when the Schottky conducts freewheeling current. The SI4831DY-T1-E3 leverages Schottky's intrinsic zero-recovery behavior.
Can SI4831DY-T1-E3 be used in a 3.3 V gate-driven circuit?
Yes - the SI4831DY-T1-E3 has a typical gate threshold voltage of –1.0 V and guaranteed turn-on at VGS = –3 V, making it fully compatible with 3.3 V logic-level drive. At VGS = –3.3 V, it delivers usable current (ID ≈ 2.2 A), and at VGS = –4.5 V, it achieves 3.5 A with rDS(on) = 90 mΩ. The SI4831DY-T1-E3 is explicitly designed for such low-voltage gate operation.
How is thermal management handled between the MOSFET and Schottky dies in SI4831DY-T1-E3?
The SI4831DY-T1-E3 uses physically separate die in a single SO-8 package, each with dedicated thermal paths: RthJF = 27 °C/W for the MOSFET and 32 °C/W for the Schottky. This allows designers to assign distinct copper pours on the PCB - e.g., larger thermal pad under pin 2/4/7 for MOSFET and optimized trace routing to pin 5/6 for Schottky - maximizing heat extraction per function. The SI4831DY-T1-E3 datasheet confirms these values under "Junction-to-Foot" test conditions.
Is SI4831DY-T1-E3 suitable for automotive applications?
The SI4831DY-T1-E3 operates across –55 °C to +150 °C junction temperature and withstands –30 V drain-source and +30 V Schottky reverse voltage, meeting baseline requirements for under-hood automotive modules. While not AEC-Q200 certified out-of-box, Vishay offers automotive-qualified variants (e.g., SI4831DY-T1-GE3) with full PPAP support. For non-safety-critical body electronics, the SI4831DY-T1-E3 is widely deployed with proper system-level qualification.
SI4831DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4831DY-T1-E3 FAQ
1.How can I place an order for SI4831DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4831DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4831DY-T1-E3 reliable?
The price and inventory of SI4831DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4831DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4831DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4831DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4831DY-T1-E3?
SI4831DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4831DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4831DY-T1-E3?
For technical support, including SI4831DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4831DY-T1-E3 requirements.
6.How does Aetrix verify that SI4831DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4831DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4831DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4831DY-T1-E3?
All SI4831DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4831DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4831DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4831DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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