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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4833ADY-T1-E3

Name: SI4833ADY-T1-E3
Brand: Vishay Siliconix
SKU: SI4833ADY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4833ADY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4833ADY-T1-E3.pdf

Description:: MOSFET P-CH 30V 4.6A 8SO

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Product details

Overview

SI4833ADY-T1-E3 from Vishay Siliconix is a P-channel 30 V MOSFET with integrated Schottky diode in SO-8 package, featuring R_DS(on) = 0.072 Ω at V_GS = −10 V, continuous drain current of −4.6 A at T_C = 25 °C, and V_F = 0.50 V at I_F = 1 A. It serves as a synchronous rectifier or reverse-polarity protection switch in DC/DC converters and battery-powered systems.

For engineers reviewing the SI4833ADY-T1-E3 datasheet, SI4833ADY-T1-E3 pinout, SI4833ADY-T1-E3 application, or SI4833ADY-T1-E3 equivalent, key selection criteria include its dual-function integration (MOSFET + Schottky), low gate charge (Q_g = 9.8 nC typ. at −10 V), and thermal resistance R_thJA = 60 °C/W - critical for compact power stage design and thermal management in space-constrained industrial and portable electronics.

Technical Context

This device integrates a P-channel enhancement-mode MOSFET and a co-packaged Schottky diode sharing source and drain terminals, enabling bidirectional current handling with controlled body-diode conduction and reduced forward voltage drop. Its gate threshold voltage (V_GS(th) = −1 to −2.5 V) supports logic-level drive from 3.3 V or 5 V controllers.

The SO-8 package provides dual-side thermal access via exposed drain pad, supporting junction-to-foot thermal resistance (R_thJF) as low as 35 °C/W. Dynamic parameters - including C_iss = 380 pF, Q_gd = 2.4 nC, and t_r = 11 ns (at V_GEN = −10 V) - indicate fast switching capability suitable for high-frequency synchronous buck topologies up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - maximum blocking voltage for reverse-polarity protection and high-side switching in 24 V systems
R_DS(on)	0.072 Ω at V_GS = −10 V - enables <150 mW conduction loss at 4 A, reducing thermal load in compact layouts
I_D	−4.6 A continuous at T_C = 25 °C - supports medium-power load switching without external heatsink
V_F (Schottky)	0.50 V at I_F = 1 A - lowers forward drop vs. standard body diode (V_SD = −0.8 to −1.2 V), improving efficiency in freewheeling paths
Q_g	9.8 nC typical at V_GS = −10 V - reduces gate drive power and enables use with low-current PWM controllers
R_thJA	60 °C/W - defines thermal derating slope on standard FR4 PCB, allowing ~1.93 W dissipation at T_A = 25 °C
t_r/t_f	11 ns / 8 ns at V_GEN = −10 V - supports clean edge transitions and minimizes switching losses in high-frequency operation

Pinout & Package

SO-8 narrow-body package (JEDEC MS-012) with exposed drain pad for thermal and electrical connection; footprint compatible with standard SOIC-8 land patterns per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls MOSFET channel; requires −10 V for full enhancement; logic-compatible down to −4.5 V
2 (S)	Source	Common terminal for MOSFET and Schottky anode; connects to system ground or positive rail depending on topology
3 (S)	Source	Second source lead for lower inductance and improved current sharing in high-di/dt applications
4 (S)	Source	Third source lead - redundant connection to reduce source inductance and improve stability
5 (D)	Drain	Shared drain for MOSFET and Schottky cathode; electrically and thermally connected to exposed pad
6 (D)	Drain	Second drain lead for enhanced thermal transfer and lower parasitic inductance
7 (D)	Drain	Third drain lead - improves current distribution and thermal coupling to PCB copper
8 (D)	Drain	Fourth drain lead - completes quad-drain configuration for optimal power dissipation

Key Features

Feature	Design Value
Integrated Schottky diode	Reduces forward voltage by ~0.4 V vs. body diode, cutting freewheeling losses in buck converters
LITTLE FOOT® Plus construction	Enables higher power density than standard SO-8 via optimized internal die attach and quad-drain layout
RoHS and halogen-free compliance	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally constrained industrial and automotive supply chains
Low Q_gd/Q_g ratio (0.24)	Improves switching robustness against Miller-induced shoot-through in synchronous rectification
Body diode t_rr = 23 ns	Minimizes reverse recovery loss when used as freewheeling element in non-synchronous configurations

Applications

Battery-Powered Load Switch	Industrial DC/DC Synchronous Rectifier
Use Scenario: Reverse-polarity protection and ON/OFF control for 12–24 V Li-ion or lead-acid battery inputs in handheld test equipment. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with integrated Schottky clamping fault current during plug-in events. Use Value: Eliminates need for external TVS and discrete Schottky, reducing BOM count by two components while maintaining <0.5 V dropout under 4 A load.	Use Scenario: Secondary-side rectification in isolated 48 V to 12 V telecom DC/DC modules operating at 300–500 kHz. IC Role / Device Role / Timing Role: Synchronously commutated rectifier driven by transformer-coupled gate signals; Schottky provides safe freewheeling during dead-time. Use Value: Achieves >92 % efficiency at full load due to combined R_DS(on) and V_F advantages, outperforming discrete MOSFET+diode solutions by 1.2 % absolute.
Automotive Body Control Module (BCM)	USB-C Power Delivery Protection
Use Scenario: Low-side driver for solenoid valves and LED lighting in 24 V commercial vehicle BCMs with load-dump immunity requirements. IC Role / Device Role / Timing Role: P-channel switch with integrated Schottky absorbing inductive kickback energy during turn-off. Use Value: Withstands 30 V reverse transients without external clamp; Schottky limits V_SD clamping to <1.2 V, preventing gate oxide stress.	Use Scenario: Input polarity protection and overcurrent limiting in USB-C PD sink designs accepting 5–20 V input. IC Role / Device Role / Timing Role: Reverse-voltage blocking switch placed between connector and PD controller; Schottky handles hot-plug surge currents. Use Value: Enables single-device solution meeting USB-IF ESD and surge requirements (IEC 61000-4-5 Level 2) without additional TVS or series FET.

Battery-Powered Load Switch

Industrial DC/DC Synchronous Rectifier

Use Scenario: Reverse-polarity protection and ON/OFF control for 12–24 V Li-ion or lead-acid battery inputs in handheld test equipment.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with integrated Schottky clamping fault current during plug-in events.

Use Value: Eliminates need for external TVS and discrete Schottky, reducing BOM count by two components while maintaining <0.5 V dropout under 4 A load.

Use Scenario: Secondary-side rectification in isolated 48 V to 12 V telecom DC/DC modules operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Synchronously commutated rectifier driven by transformer-coupled gate signals; Schottky provides safe freewheeling during dead-time.

Use Value: Achieves >92 % efficiency at full load due to combined R_DS(on) and V_F advantages, outperforming discrete MOSFET+diode solutions by 1.2 % absolute.

Automotive Body Control Module (BCM)

USB-C Power Delivery Protection

Use Scenario: Low-side driver for solenoid valves and LED lighting in 24 V commercial vehicle BCMs with load-dump immunity requirements.

IC Role / Device Role / Timing Role: P-channel switch with integrated Schottky absorbing inductive kickback energy during turn-off.

Use Value: Withstands 30 V reverse transients without external clamp; Schottky limits V_SD clamping to <1.2 V, preventing gate oxide stress.

Use Scenario: Input polarity protection and overcurrent limiting in USB-C PD sink designs accepting 5–20 V input.

IC Role / Device Role / Timing Role: Reverse-voltage blocking switch placed between connector and PD controller; Schottky handles hot-plug surge currents.

Use Value: Enables single-device solution meeting USB-IF ESD and surge requirements (IEC 61000-4-5 Level 2) without additional TVS or series FET.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET-with-integrated-Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.042 Ω at −10 V; higher I_D = −6.5 A; SO-8 but no Schottky diode	Requires external Schottky for freewheeling; better for pure switching where diode function is handled separately	Select when lower R_DS(on) is prioritized and board space allows discrete diode placement
DMN3026LSD-13	P-channel only; R_DS(on) = 0.055 Ω at −10 V; no integrated Schottky; same SO-8 footprint	Not suitable for applications requiring integrated freewheeling path; needs external diode for inductive loads	Choose when cost sensitivity outweighs integration benefit and thermal budget permits discrete solution

Compared with SI4833ADY-T1-E3, Si7157DP-T1-GE3 offers lower conduction loss but lacks integrated Schottky - increasing component count and layout complexity. DMN3026LSD-13 matches footprint and voltage rating but requires external diode placement, raising BOM cost and reducing reliability in high-vibration environments.

Availability

SI4833ADY-T1-E3 is available at Aetrix Electronics and suitable for battery management systems, industrial DC/DC converters, automotive body electronics, and USB-C power delivery protection requiring stable component supply and RoHS-compliant sourcing.

Supply support for SI4833ADY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SI4833ADY product line targets high-density power conversion and protection applications where integration of MOSFET and Schottky in one SO-8 package reduces footprint, improves thermal performance, and simplifies layout for space-constrained designs.

FAQ

What is the maximum continuous drain current rating for SI4833ADY-T1-E3 at 70 °C case temperature?

The maximum continuous drain current for SI4833ADY-T1-E3 is −3.6 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied when designing for sustained operation in warm ambient environments. SI4833ADY-T1-E3 maintains safe operation within its 150 °C junction limit under these conditions.

Does SI4833ADY-T1-E3 include a Schottky diode, and how is it connected internally?

Yes, SI4833ADY-T1-E3 integrates a Schottky diode with anode connected to the source terminal and cathode to the drain terminal - forming a parallel path across the MOSFET's intrinsic body diode. This configuration provides lower forward voltage (V_F = 0.50 V at 1 A) and faster recovery (t_rr = 23 ns) than the body diode alone. SI4833ADY-T1-E3 leverages this dual-path structure to improve efficiency in freewheeling and reverse-current protection roles.

What is the gate threshold voltage range for SI4833ADY-T1-E3, and is it compatible with 3.3 V logic?

The gate threshold voltage (V_GS(th)) for SI4833ADY-T1-E3 is specified from −1 V to −2.5 V at I_D = −250 µA, confirming compatibility with 3.3 V logic-level drive when referenced to source. At V_GS = −4.5 V, SI4833ADY-T1-E3 delivers R_DS(on) = 0.110 Ω - sufficient for many medium-current applications. Full enhancement (R_DS(on) = 0.072 Ω) requires −10 V, but SI4833ADY-T1-E3 remains functional across both voltage domains.

How does the thermal performance of SI4833ADY-T1-E3 compare between junction-to-ambient and junction-to-foot metrics?

SI4833ADY-T1-E3 specifies R_thJA = 60 °C/W (typical) for junction-to-ambient on FR4 and R_thJF = 35 °C/W (typical) for junction-to-foot - reflecting superior heat transfer through the exposed drain pad to PCB copper. This means that with adequate copper pour under the drain leads, SI4833ADY-T1-E3 can dissipate nearly twice the power compared to ambient-only cooling. SI4833ADY-T1-E3 benefits significantly from thermal vias and multi-layer board design.

Can SI4833ADY-T1-E3 be used in synchronous rectification topologies, and what gate drive considerations apply?

Yes, SI4833ADY-T1-E3 is designed for synchronous rectification, with low Q_g (9.8 nC) and fast switching (t_r = 11 ns) enabling efficient operation up to 500 kHz. Gate drive must be referenced to source and swing negative relative to it; dead-time control is essential to prevent shoot-through. SI4833ADY-T1-E3's integrated Schottky provides safe freewheeling during dead-time, eliminating need for external diode in most implementations.

SI4833ADY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 72mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 750 pF @ 15 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.93W (Ta), 2.75W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4833ADY-T1-E3 FAQ

1.How can I place an order for SI4833ADY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4833ADY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4833ADY-T1-E3 reliable?

The price and inventory of SI4833ADY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4833ADY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4833ADY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4833ADY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4833ADY-T1-E3?

SI4833ADY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4833ADY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4833ADY-T1-E3?

For technical support, including SI4833ADY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4833ADY-T1-E3 requirements.

6.How does Aetrix verify that SI4833ADY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4833ADY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4833ADY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4833ADY-T1-E3?

All SI4833ADY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4833ADY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4833ADY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4833ADY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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