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Vishay Siliconix SI4835DDY-T1-GE3
- Part No.:
- SI4835DDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4835DDY-T1-GE3.pdf
- Description:
- MOSFET P-CH 30V 13A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,368
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Product details
Overview
SI4835DDY-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V drain-source voltage, 0.018 Ω RDS(on) at -10 V gate drive, and -13 A continuous drain current at TC = 25 °C. It serves as a high-efficiency load switch in notebook PC power rails and desktop motherboard VRM output stages.
For engineers reviewing the SI4835DDY-T1-GE3 datasheet, SI4835DDY-T1-GE3 pinout, SI4835DDY-T1-GE3 application, or SI4835DDY-T1-GE3 equivalent, key selection criteria include its -30 V rating, low 0.030 Ω RDS(on) at -4.5 V gate drive, 22 nC total gate charge (VGS = -4.5 V), SO-8 thermal resistance (RthJA = 50 °C/W max), and integrated body diode with 28 ns reverse recovery time.
Technical Context
This device uses TrenchFET® technology to achieve low on-resistance and fast switching in a surface-mount SO-8 package. Its gate threshold voltage range of -1 V to -3 V enables reliable turn-on with standard logic-level negative gate drivers, while the 100 % Rg and UIS tested qualification ensures robustness in transient-limited load-switch applications.
The MOSFET features a single-channel P-channel configuration with an integrated source-drain body diode (VSD = -0.75 V typ. at -2 A), and supports pulsed drain currents up to -50 A. Thermal design is supported by documented junction-to-foot (RthJF = 22 °C/W max) and junction-to-ambient (RthJA = 50 °C/W max) resistances under defined PCB mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for high-side load switching in 24 V or lower systems |
| RDS(on) max @ VGS = -10 V | 0.018 Ω - Enables ≤1.8 W conduction loss at -10 A continuous current |
| RDS(on) max @ VGS = -4.5 V | 0.030 Ω - Ensures stable operation with common -4.5 V gate drive in battery-backed circuits |
| Qg typ. @ VGS = -4.5 V | 22 nC - Determines gate driver power requirement and switching speed in PWM-controlled loads |
| ID continuous @ TC = 25 °C | -13 A - Supports high-current peripheral power gating without external heatsink |
| Body diode trr | 28 ns typ. - Minimizes switching losses and voltage spikes during synchronous rectification or flyback recovery |
| PD @ TC = 25 °C | 5.6 W - Defines maximum steady-state power dissipation with adequate case cooling |
Pinout & Package
SI4835DDY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads for thermal enhancement. The package measures 4.9 mm × 3.9 mm × 1.55 mm (D × E × A) and complies with JEDEC MS-012 outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (D) | Pins 1–3 and 5–8 are internally connected to drain; used for high-current output path and thermal conduction to PCB copper |
| 4 | Gate (G) | Control terminal; requires negative voltage relative to source to turn on; 1.3 Ω max gate resistance limits ringing |
| Source | Source (S) | Pins 1–3 and 5–8 are drain-only; source is external connection via PCB trace or adjacent component - device has no dedicated source pin; source node is system ground or floating rail reference |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for efficient switching in space-constrained load switches |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress in real-world PCB layouts |
| Low VGS(th) (-1 V to -3 V) | Enables full enhancement with widely available -4.5 V or -5 V gate drivers, eliminating need for level shifters |
| Integrated body diode | Supports bidirectional current flow in hot-swap and OR-ing applications without external diode |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C requirements for environmentally compliant manufacturing |
Applications
| Notebook PC Power Rail Switching | Desktop Motherboard VRM Output Stage |
|---|---|
Use Scenario: Selective power gating of USB-C PD ports and PCIe slots during sleep states. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling 3.3 V or 5 V distribution with fast turn-off to meet ACPI S3/S4 leakage targets. Use Value: 0.030 Ω RDS(on) at -4.5 V gate drive minimizes standby voltage drop and self-heating during extended idle periods. | Use Scenario: Secondary-side synchronous rectification and output current sensing in multiphase CPU VRMs. IC Role / Device Role / Timing Role: Low-side switch in active clamp or current-sense feedback path with tight timing control enabled by 22 nC Qg. Use Value: 28 ns body diode trr reduces cross-conduction loss and improves efficiency at 300–500 kHz switching frequencies. |
| Industrial PLC I/O Module Protection | Automotive Body Control Module Load Management |
Use Scenario: Overcurrent-protected 24 V DC output switching for solenoid and relay drivers. IC Role / Device Role / Timing Role: Fault-tolerant high-side switch with built-in avalanche energy rating (EAS = 20 mJ) for inductive kick suppression. Use Value: -20 A IAS and 20 mJ EAS allow safe clamping of >100 V transients without external TVS diodes. | Use Scenario: Controlled power sequencing of infotainment subsystems during vehicle ignition cycles. IC Role / Device Role / Timing Role: Soft-start-capable load switch managing inrush into capacitive loads up to 10,000 µF. Use Value: -13 A ID rating and 5.6 W PD support sustained 5 A loads at ambient temperatures up to 70 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PBF | RDS(on) = 0.028 Ω @ -10 V; Qg = 26 nC; SO-8 package; no halogen-free marking | Higher gate charge increases driver loss; slightly higher RDS(on) raises conduction loss at high current | Acceptable where RoHS compliance is not required and thermal margin exceeds 15 °C |
| DMN3026LSD-13 | RDS(on) = 0.025 Ω @ -10 V; Qg = 17 nC; SO-8; lead-free/halogen-free; different pinout (source on pins 1–4) | Lower Qg improves switching efficiency but source-terminal layout differs - requires PCB redesign | Preferred for new designs prioritizing gate drive efficiency, provided layout revision is feasible |
Compared with IRF7425PBF and DMN3026LSD-13, SI4835DDY-T1-GE3 offers the lowest RDS(on) at -4.5 V (0.030 Ω), critical for logic-level driven systems, while maintaining identical SO-8 footprint and halogen-free compliance - making it optimal for drop-in replacement in existing notebook and desktop designs without layout change.
Availability
SI4835DDY-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC power management, desktop motherboard VRM output stages, and industrial PLC I/O module protection requiring stable component supply and long-term lifecycle assurance.
Supply support for SI4835DDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SI4835DDY-T1-GE3 belongs to Vishay's TrenchFET® P-channel MOSFET product line, engineered for high-current, low-voltage load switching in computing, industrial, and automotive power systems where compact size and thermal performance are critical.
FAQ
What is the maximum continuous drain current rating for SI4835DDY-T1-GE3 at 70 °C case temperature?
The SI4835DDY-T1-GE3 supports -10.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations under typical PCB mounting conditions and must be validated against actual board layout and airflow. The SI4835DDY-T1-GE3 datasheet confirms this rating applies to steady-state operation with proper thermal coupling to the PCB copper pour.
Does SI4835DDY-T1-GE3 have a dedicated source pin in its SO-8 package?
No, SI4835DDY-T1-GE3 does not have a dedicated source pin. Its SO-8 package assigns pins 1–3 and 5–8 to drain, pin 4 to gate, and leaves the source terminal external - requiring connection via PCB trace to system ground or reference rail. This configuration is standard for Vishay's single-die P-channel SO-8 MOSFETs like the SI4835DDY-T1-GE3 and is documented in the top-view diagram on page 1 of the datasheet.
What is the typical body diode forward voltage of SI4835DDY-T1-GE3 at -2 A?
The typical body diode forward voltage (VSD) of SI4835DDY-T1-GE3 is -0.75 V at IS = -2 A and VGS = 0 V, per the Drain-Source Body Diode Characteristics table on page 2 of the datasheet. This value is measured under standardized conditions and directly impacts conduction loss in reverse-biased or freewheeling operation - a key parameter when using SI4835DDY-T1-GE3 in OR-ing or hot-swap configurations.
Is SI4835DDY-T1-GE3 suitable for avalanche energy handling in inductive load switching?
Yes, SI4835DDY-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 20 mJ and avalanche current (IAS) of -20 A with L = 0.1 mH, as confirmed in the Absolute Maximum Ratings table. These values validate its use in unprotected inductive load switching - such as solenoid drivers - where the SI4835DDY-T1-GE3 absorbs stored magnetic energy without failure, provided operating conditions stay within the published SOA curve.
What is the gate-source leakage current specification for SI4835DDY-T1-GE3?
The gate-source leakage current (IGSS) for SI4835DDY-T1-GE3 is ±100 nA maximum at VGS = ±25 V and TJ = 25 °C, per the Static Electrical Characteristics table. This low leakage ensures minimal gate drive current demand and stable biasing in high-impedance control circuits - a critical factor for battery-powered systems using SI4835DDY-T1-GE3 as a load switch.
SI4835DDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1960 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 5.6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4835DDY-T1-GE3 FAQ
1.How can I place an order for SI4835DDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4835DDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4835DDY-T1-GE3 reliable?
The price and inventory of SI4835DDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4835DDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4835DDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4835DDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4835DDY-T1-GE3?
SI4835DDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4835DDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4835DDY-T1-GE3?
For technical support, including SI4835DDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4835DDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4835DDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4835DDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4835DDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4835DDY-T1-GE3?
All SI4835DDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4835DDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4835DDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4835DDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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