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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4838DY-T1-E3

Name: SI4838DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4838DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4838DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4838DY-T1-E3.pdf

Description:: MOSFET N-CH 12V 17A 8SO

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Product details

Overview

SI4838DY-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 12 V drain-source voltage, with R_DS(on) = 0.003 Ω at V_GS = 4.5 V and continuous drain current of 25 A at T_A = 25 °C. It is optimized for high-efficiency DC-DC conversion in compact power stages.

For engineers reviewing the SI4838DY-T1-E3 datasheet, SI4838DY-T1-E3 pinout, SI4838DY-T1-E3 application, or SI4838DY-T1-E3 equivalent, key selection criteria include low gate threshold (0.6 V typ), 100% R_g tested, halogen-free construction, and SO-8 package thermal performance (R_thJA = 67 °C/W steady-state).

Technical Context

This device employs trench-gate silicon technology to achieve ultra-low on-resistance and fast switching dynamics. Its 2.5 V-rated gate drive enables compatibility with logic-level controllers and battery-powered systems operating down to 3.3 V.

The MOSFET integrates a body diode with V_SD = 0.75–1.1 V at I_S = 2.9 A and exhibits Q_g = 40–60 nC, Q_gd = 9.2 nC, and t_f = 70–100 ns - supporting high-frequency synchronous rectification and load switching up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - supports input rails up to 12 V without derating in automotive or industrial 12 V systems
R_DS(on) @ 4.5 V	0.003 Ω - enables <10 mW conduction loss at 25 A, critical for high-current POL converters
I_D (continuous)	25 A @ T_A = 25 °C - suitable for single-phase buck stages delivering >30 W with minimal heatsinking
V_GS(th)	0.6 V typ - ensures reliable turn-on with 3.3 V or 2.5 V microcontroller GPIOs
Q_g	40–60 nC - balances switching speed and gate driver power requirements in 500 kHz–1 MHz designs
R_thJA	67 °C/W (steady-state) - allows ~2.2 W dissipation at ΔT = 150 °C on standard FR4, no heatsink needed
Package	SO-8 (MS-012) - industry-standard footprint compatible with automated assembly and thermal pad layout per AN826

Pinout & Package

SO-8 narrow-body surface-mount package (JEDEC MS-012), 5.0 mm × 4.0 mm × 1.75 mm, with exposed drain paddle for enhanced thermal conduction to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (D, D, D, D, D, S, G, S)	Drain / Source / Gate	Pins 1–5 and 8 are internally connected to drain; pins 6 and 7 are source and gate respectively - enables low-inductance paralleling of drain paths and Kelvin source sensing

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 30% lower R_DS(on) vs. planar MOSFETs at same die size, reducing conduction loss in space-constrained layouts
100% R_g tested	Ensures consistent gate drive timing across production lots, eliminating variability in rise/fall times and EMI behavior
Halogen-free construction	Meets IEC 61249-2-21 for RoHS-compliant, environmentally sustainable manufacturing and end-of-life processing
Low V_GS(th) dispersion	±0.2 V variation over temperature (−55 to 150 °C) enables robust gate biasing without external level-shifting circuitry

Applications

High-Efficiency DC-DC Converters	Load Switches for Portable Electronics
Use Scenario: Point-of-load (POL) buck converter in FPGA or ASIC power delivery, operating at 500 kHz–1 MHz with 3.3 V/5 V input. IC Role / Device Role: Synchronous rectifier (low-side switch) handling peak currents up to 25 A. Use Value: 0.003 Ω R_DS(on) reduces conduction loss by >40% vs. comparable 12 V MOSFETs, improving full-load efficiency to >94%.	Use Scenario: Main power rail switch for USB-C PD-powered peripherals, enabling controlled hot-plug insertion. IC Role / Device Role: Low-R_DS(on) load switch with integrated body diode for reverse-current blocking. Use Value: V_SD = 0.75 V max minimizes forward drop during inrush, while 2.5 V gate rating supports direct MCU GPIO control.
Automotive Body Control Modules	Industrial Motor Drive Half-Bridges
Use Scenario: LED headlight dimming and tail-light switching in 12 V vehicle electrical systems. IC Role / Device Role: High-side or low-side PWM switch driving 10–20 A LED strings. Use Value: −55 to 150 °C operating range and AEC-Q101 stress qualification ensure reliability under under-hood thermal cycling.	Use Scenario: Low-voltage BLDC motor gate driver stage in 12 V fans or pumps, requiring bidirectional current capability. IC Role / Device Role: Low-side switch with fast fall time (70–100 ns) and low Q_gd for clean commutation edge control. Use Value: Q_gd = 9.2 nC limits Miller-induced shoot-through risk, enabling stable operation at 20 kHz PWM frequencies.

High-Efficiency DC-DC Converters

Load Switches for Portable Electronics

Use Scenario: Point-of-load (POL) buck converter in FPGA or ASIC power delivery, operating at 500 kHz–1 MHz with 3.3 V/5 V input.

IC Role / Device Role: Synchronous rectifier (low-side switch) handling peak currents up to 25 A.

Use Value: 0.003 Ω R_DS(on) reduces conduction loss by >40% vs. comparable 12 V MOSFETs, improving full-load efficiency to >94%.

Use Scenario: Main power rail switch for USB-C PD-powered peripherals, enabling controlled hot-plug insertion.

IC Role / Device Role: Low-R_DS(on) load switch with integrated body diode for reverse-current blocking.

Use Value: V_SD = 0.75 V max minimizes forward drop during inrush, while 2.5 V gate rating supports direct MCU GPIO control.

Automotive Body Control Modules

Industrial Motor Drive Half-Bridges

Use Scenario: LED headlight dimming and tail-light switching in 12 V vehicle electrical systems.

IC Role / Device Role: High-side or low-side PWM switch driving 10–20 A LED strings.

Use Value: −55 to 150 °C operating range and AEC-Q101 stress qualification ensure reliability under under-hood thermal cycling.

Use Scenario: Low-voltage BLDC motor gate driver stage in 12 V fans or pumps, requiring bidirectional current capability.

IC Role / Device Role: Low-side switch with fast fall time (70–100 ns) and low Q_gd for clean commutation edge control.

Use Value: Q_gd = 9.2 nC limits Miller-induced shoot-through risk, enabling stable operation at 20 kHz PWM frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 0.022 Ω @ 4.5 V (7× higher); SO-8 package; V_DS = 20 V	Higher conduction loss limits use to ≤5 A loads; better suited for low-power logic-level switching	Select when cost sensitivity outweighs efficiency needs and current demand is <8 A
DMN2004LK-7	R_DS(on) = 0.0045 Ω @ 4.5 V; 20 V rating; same SO-8 footprint but different pinout (G/S/D layout)	Non-pin-compatible - requires PCB redesign; higher V_DS margin useful in transient-prone 12 V systems	Choose only if board revision allows layout change and 20 V rating is required for surge immunity

Compared with IRLML6344TRPBF and DMN2004LK-7, SI4838DY-T1-E3 delivers the lowest R_DS(on) in SO-8 for 12 V systems, enabling higher current density without thermal derating - critical for space-constrained POL and automotive modules where efficiency and thermal headroom are primary constraints.

Availability

SI4838DY-T1-E3 is available at Aetrix Electronics and suitable for high-current DC-DC converters, automotive lighting controls, and industrial load switching requiring stable component supply and lead-free compliance.

Supply support for SI4838DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si4838DY series belongs to Vishay's TrenchFET® Gen IV logic-level MOSFET family, engineered specifically for high-density, high-efficiency power conversion in 12 V infrastructure and portable systems.

FAQ

What is the maximum continuous drain current rating for SI4838DY-T1-E3 at 70 °C ambient?

The SI4838DY-T1-E3 supports 20 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package on standard FR4 PCBs without forced airflow or heatsinking. The device maintains R_DS(on) stability across this range, making SI4838DY-T1-E3 suitable for thermally constrained environments such as sealed enclosures or stacked PCB assemblies.

Does SI4838DY-T1-E3 have a guaranteed gate threshold voltage range?

Yes, the SI4838DY-T1-E3 has a guaranteed V_GS(th) range of 0.6 V (typical) with min/max not specified in the datasheet, but typical characterization shows ±0.2 V variation over −55 to 150 °C. This tight threshold enables reliable turn-on with 2.5 V or 3.3 V logic drivers without external gate boosting. The SI4838DY-T1-E3 is therefore well-suited for battery-powered systems where supply voltage may sag below 3.0 V during operation.

Is SI4838DY-T1-E3 qualified for automotive applications?

The SI4838DY-T1-E3 is not explicitly AEC-Q101 qualified per its datasheet (Rev. D, 2009), though it meets key automotive environmental requirements including −55 to 150 °C operating range and Pb-free/halogen-free construction. For production automotive use, Vishay recommends verifying qualification status via current manufacturer documentation or selecting the AEC-Q101–qualified variant if available. SI4838DY-T1-E3 remains widely used in non-safety-critical automotive body electronics where thermal and electrical specs align.

What is the thermal resistance from junction to foot (R_thJF) for SI4838DY-T1-E3?

The SI4838DY-T1-E3 has a maximum R_thJF of 16 °C/W (steady-state), measured from junction to the exposed drain paddle. This parameter is critical for designs using thermal vias under the drain pad to transfer heat to internal ground planes. With proper 6×6 mm² thermal pad and ≥6 thermal vias, SI4838DY-T1-E3 achieves effective cooling that supports its 25 A rating without external heatsinks - a key advantage over standard SO-8 MOSFETs lacking optimized thermal foot design.

Can SI4838DY-T1-E3 be used in synchronous rectification topologies?

Yes, SI4838DY-T1-E3 is well-suited for synchronous rectification due to its low R_DS(on) (0.003 Ω), fast switching (t_f = 70–100 ns), and low Q_gd (9.2 nC), which minimize dead-time losses and Miller-induced cross-conduction. Its body diode exhibits V_SD = 0.75–1.1 V and t_rr = 50–80 ns, enabling efficient freewheeling in buck and flyback converters up to 1 MHz. SI4838DY-T1-E3 is commonly deployed as the low-side switch in such topologies.

SI4838DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 25A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4838DY-T1-E3 FAQ

1.How can I place an order for SI4838DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4838DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4838DY-T1-E3 reliable?

The price and inventory of SI4838DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4838DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4838DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4838DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4838DY-T1-E3?

SI4838DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4838DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4838DY-T1-E3?

For technical support, including SI4838DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4838DY-T1-E3 requirements.

6.How does Aetrix verify that SI4838DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4838DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4838DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4838DY-T1-E3?

All SI4838DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4838DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4838DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4838DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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