Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4838DY-T1-GE3

Name: SI4838DY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4838DY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI4838DY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4838DY-T1-GE3.pdf

Description:: MOSFET N-CH 12V 17A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,883

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI4838DY-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 12 V drain-source voltage, with R_DS(on) = 0.003 Ω at V_GS = 4.5 V and continuous drain current of 25 A at T_A = 25 °C. It features halogen-free construction per IEC 61249-2-21 and is optimized for high-efficiency DC-DC converter synchronous rectification in portable power systems.

For engineers reviewing the SI4838DY-T1-GE3 datasheet, SI4838DY-T1-GE3 pinout, SI4838DY-T1-GE3 application, or SI4838DY-T1-GE3 equivalent, key selection criteria include its low on-resistance at 2.5 V gate drive, 100 % R_g tested gate resistance, and SO-8 package thermal performance with R_thJA = 67 °C/W (steady state).

Technical Context

This MOSFET uses Vishay's TrenchFET® process to achieve enhanced conduction efficiency at low gate voltages, supporting logic-level drive down to 2.5 V. Its 12 V V_DS rating and 0.004 Ω R_DS(on) at V_GS = 2.5 V enable use in compact, high-current load switches and battery protection circuits where gate drive headroom is limited.

The device integrates a body diode with V_SD = 0.75–1.1 V at I_S = 2.9 A and exhibits Q_g = 40–60 nC, Q_gd = 9.2 nC, and fast switching times (t_d(off) = 140–210 ns), making it suitable for high-frequency synchronous buck topologies requiring low gate charge and controlled dv/dt.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum blocking voltage compatible with single-cell Li-ion and 12 V automotive auxiliary rails.
R_DS(on) @ V_GS = 4.5 V	0.003 Ω - Enables <10 mW conduction loss at 25 A, critical for thermally constrained PCB layouts.
R_DS(on) @ V_GS = 2.5 V	0.004 Ω - Supports direct interface with 2.5 V logic or microcontroller GPIO without level-shifting.
I_D (continuous, T_A = 25 °C)	25 A - Sustains high pulsed loads in power delivery paths such as USB PD sink FETs or e-fuse control.
Q_g	40–60 nC - Low total gate charge reduces driver power and enables efficient operation above 500 kHz switching.
R_thJA (steady state)	67 °C/W - Allows ~2.2 W dissipation on standard FR4 before exceeding 150 °C junction temperature.
V_GS(th)	0.6 V typical - Ensures reliable turn-on with minimal gate overdrive, reducing shoot-through risk in half-bridge configurations.

Pinout & Package

SI4838DY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement. Pin 1–8 follow JEDEC MS-012 outline with pins 1, 2, 3, 4 = Source; pins 5, 6, 7, 8 = Drain; pin 3 = Gate (top-view numbering).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source connection for all four internal die segments; electrically tied and thermally coupled to PCB copper pour.
5, 6, 7, 8	Drain	Parallel-connected drain terminals forming low-inductance, high-current path to ground plane or power rail.
3	Gate	Single gate input terminal; requires <60 nC charge for full enhancement; gate resistance R_g = 1.0–2.9 Ω.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.003 Ω R_DS(on) at 4.5 V while maintaining robust short-circuit withstand capability.
100 % R_g tested	Guarantees gate resistance between 1.0–2.9 Ω, enabling predictable gate drive timing and EMI control.
Halogen-free construction	Complies with IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated end equipment.
Low V_GS(th)	0.6 V typical threshold ensures stable turn-on even with aging or temperature drift in gate drive circuitry.
Enhanced thermal foot	Exposed drain pad improves R_thJF to 13–16 °C/W, allowing >2× power handling vs. non-exposed SO-8 equivalents.

Applications

USB-C Power Delivery Sink	Li-ion Battery Protection IC FET
Use Scenario: High-current path switch in USB-C PD 3.0 compliant power sink, handling up to 20 V/5 A bidirectional power flow. IC Role / Device Role: Synchronous rectifier and reverse-polarity protection FET, controlled by dedicated battery management IC. Use Value: 0.004 Ω R_DS(on) at 2.5 V gate drive enables full conduction under low-voltage fault conditions without external level shifters.	Use Scenario: Primary overcurrent and short-circuit protection switch in 2S–4S Li-ion battery packs for power tools and drones. IC Role / Device Role: High-side load switch managed by integrated protection ASIC with precise current sensing. Use Value: 25 A continuous rating and 60 A pulsed capability support burst-mode motor startup while maintaining <15 mW static loss at 10 A.
Point-of-Load DC-DC Converter	Automotive Body Control Module Load Switch
Use Scenario: Synchronous rectifier in 12 V input → 1.2 V/30 A output buck converter for FPGA core supply. IC Role / Device Role: Low-side synchronous FET operating at 600 kHz with gate drive sourced from controller's bootstrap circuit. Use Value: 40–60 nC Q_g and 9.2 nC Q_gd minimize switching losses and reduce gate driver stress in high-frequency operation.	Use Scenario: 12 V load switch for interior lighting, HVAC actuators, and sensor power domains in BCM designs. IC Role / Device Role: High-reliability, thermally robust discrete switch replacing mechanical relays in ASIL-B subsystems. Use Value: R_thJA = 67 °C/W and -55 to +150 °C operating range ensure stable performance across under-hood thermal cycling.

USB-C Power Delivery Sink

Li-ion Battery Protection IC FET

Use Scenario: High-current path switch in USB-C PD 3.0 compliant power sink, handling up to 20 V/5 A bidirectional power flow.

IC Role / Device Role: Synchronous rectifier and reverse-polarity protection FET, controlled by dedicated battery management IC.

Use Value: 0.004 Ω R_DS(on) at 2.5 V gate drive enables full conduction under low-voltage fault conditions without external level shifters.

Use Scenario: Primary overcurrent and short-circuit protection switch in 2S–4S Li-ion battery packs for power tools and drones.

IC Role / Device Role: High-side load switch managed by integrated protection ASIC with precise current sensing.

Use Value: 25 A continuous rating and 60 A pulsed capability support burst-mode motor startup while maintaining <15 mW static loss at 10 A.

Point-of-Load DC-DC Converter

Automotive Body Control Module Load Switch

Use Scenario: Synchronous rectifier in 12 V input → 1.2 V/30 A output buck converter for FPGA core supply.

IC Role / Device Role: Low-side synchronous FET operating at 600 kHz with gate drive sourced from controller's bootstrap circuit.

Use Value: 40–60 nC Q_g and 9.2 nC Q_gd minimize switching losses and reduce gate driver stress in high-frequency operation.

Use Scenario: 12 V load switch for interior lighting, HVAC actuators, and sensor power domains in BCM designs.

IC Role / Device Role: High-reliability, thermally robust discrete switch replacing mechanical relays in ASIL-B subsystems.

Use Value: R_thJA = 67 °C/W and -55 to +150 °C operating range ensure stable performance across under-hood thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 0.022 Ω @ 4.5 V; lower current rating (4.3 A); SOT-23 package	Targeted at space-constrained, low-power (<5 W) switching; unsuitable for >10 A loads	Select only for ultra-low-cost, low-current bias rails where SO-8 footprint is prohibitive.
DMN3020LSD-13	R_DS(on) = 0.021 Ω @ 4.5 V; dual N-channel in SO-8; higher V_DS (30 V)	Designed for higher-voltage DC-DC stages; lacks 2.5 V drive optimization and halogen-free certification	Prefer when dual-FET topology or 30 V blocking is required; not drop-in for SI4838DY-T1-GE3's low-V_DS/low-R_DS(on) use case.

Compared with IRLML6344TRPBF and DMN3020LSD-13, SI4838DY-T1-GE3 delivers 7× lower R_DS(on) and 6× higher current capacity in the same SO-8 footprint, making it uniquely suited for high-efficiency, high-density 12 V power delivery where thermal margin and gate drive simplicity are critical.

Availability

SI4838DY-T1-GE3 is available at Aetrix Electronics and suitable for USB-C power delivery systems, Li-ion battery protection modules, and automotive body control units requiring stable component supply and halogen-free compliance.

Supply support for SI4838DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The Si4838DY product line targets high-current, low-voltage power switching applications demanding logic-level gate drive, low thermal resistance, and environmental compliance-especially in portable and automotive power systems.

FAQ

What is the maximum continuous drain current for SI4838DY-T1-GE3 at 70 °C ambient temperature?

The SI4838DY-T1-GE3 supports 20 A continuous drain current at T_A = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package with standard FR4 mounting; actual current capability may increase with enhanced PCB copper area or forced airflow. The SI4838DY-T1-GE3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)" condition.

Does SI4838DY-T1-GE3 support gate drive from a 2.5 V microcontroller GPIO?

Yes, SI4838DY-T1-GE3 is explicitly characterized for 2.5 V gate drive, delivering R_DS(on) = 0.004 Ω at V_GS = 2.5 V and I_D = 20 A. Its 0.6 V typical V_GS(th) ensures full enhancement well below 2.5 V, eliminating need for external level shifters. This behavior is verified in the "Specifications" table of the SI4838DY-T1-GE3 datasheet.

What is the thermal resistance from junction to ambient for SI4838DY-T1-GE3 under steady-state conditions?

The SI4838DY-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 80 °C/W under steady-state conditions on a 1" × 1" FR4 board, with a typical value of 67 °C/W. This parameter directly determines allowable power dissipation before reaching the 150 °C maximum junction temperature. The SI4838DY-T1-GE3 datasheet specifies these values in the "Thermal Resistance Ratings" section.

Is SI4838DY-T1-GE3 halogen-free and RoHS-compliant?

Yes, SI4838DY-T1-GE3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant. The "-GE3" suffix explicitly denotes lead-free and halogen-free construction, confirmed in the ordering information and features list of the official SI4838DY-T1-GE3 datasheet. No brominated flame retardants or chlorine-based compounds are used in its molding compound or terminations.

What is the total gate charge (Q_g) specification for SI4838DY-T1-GE3?

The SI4838DY-T1-GE3 has a total gate charge (Q_g) of 40–60 nC, measured at V_DS = 6 V, V_GS = 4.5 V, and I_D = 25 A. This low Q_g contributes to reduced switching losses and relaxed gate driver requirements in high-frequency applications. The SI4838DY-T1-GE3 datasheet lists this value in the "Dynamic" section of its specifications table.

SI4838DY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 25A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4838DY-T1-GE3 FAQ

1.How can I place an order for SI4838DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4838DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4838DY-T1-GE3 reliable?

The price and inventory of SI4838DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4838DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4838DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4838DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4838DY-T1-GE3?

SI4838DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4838DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4838DY-T1-GE3?

For technical support, including SI4838DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4838DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4838DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4838DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4838DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4838DY-T1-GE3?

All SI4838DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4838DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4838DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4838DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …