My Inquiry
My Account
Vishay Siliconix SI4842BDY-T1-GE3
- Part No.:
- SI4842BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4842BDY-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 28A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:1,533
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI4842BDY-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in SO-8 package, featuring RDS(on) = 4.2 mΩ at VGS = 10 V, 28 A continuous drain current at TC = 25 °C, and 29 nC total gate charge. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drivers.
For engineers reviewing the SI4842BDY-T1-GE3 datasheet, SI4842BDY-T1-GE3 pinout, SI4842BDY-T1-GE3 application, or SI4842BDY-T1-GE3 equivalent, key selection criteria include low on-resistance at 4.5 V drive, halogen-free compliance, thermal resistance (RthJA = 32 °C/W typ), and body diode recovery performance (trr = 34 ns).
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-frequency power stages. Its gate threshold voltage (VGS(th) = 1.4–3.0 V) enables robust 4.5 V logic-level drive compatibility while maintaining noise immunity.
The device integrates a low-Qrr (31 nC) body diode with ta = 18 ns and tb = 16 ns, supporting efficient synchronous rectification and reducing reverse recovery losses in buck converters and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24 V rail and automotive 12 V systems |
| RDS(on) | 4.2 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 20 A in compact layouts |
| ID (continuous) | 28 A @ TC = 25 °C - Supports high-current loads without external heatsink under moderate PCB copper |
| Qg | 29 nC @ VGS = 4.5 V - Low gate drive energy reduces controller loading and switching loss at 500 kHz+ |
| trr | 34 ns - Minimizes shoot-through risk and EMI in synchronous rectifiers |
| RthJA | 32 °C/W (typ) - Allows ~3 W dissipation at ΔT = 100 °C on standard FR4 with 1" × 1" pad |
| VGS(th) | 1.4–3.0 V - Ensures turn-on with 3.3 V or 5 V microcontroller GPIOs |
Pinout & Package
SO-8 (JEDEC MS-012) surface-mount package with exposed drain paddle for enhanced thermal performance. Dimensions: 4.9 mm × 6.0 mm × 1.55 mm (D × H × A), lead pitch 1.27 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control input; requires low-impedance driver to charge Qg = 29 nC efficiently |
| 2, 3, 4, 5, 7, 8 | Drain (common) | High-current power path; pins 2/3/4/5/7/8 and exposed paddle form parallel drain connection |
| 6 | Source | Power return node; ties to ground plane or low-side shunt resistor |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 4.2 mΩ RDS(on) in SO-8, enabling higher power density than planar MOSFETs |
| 100 % Rg tested | Guarantees gate resistance ≤ 2 Ω, ensuring predictable turn-on timing and reduced ringing |
| Halogen-free construction | Complies with IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated designs |
| Low Qgd/Qg ratio | Qgd = 9.4 nC / Qg = 29 nC → 32 % - Improves hard-switching efficiency and EMI behavior |
| Enhanced body diode dV/dt immunity | Rated for 100 A/µs dI/dt - Reduces false triggering during fast inductive transients |
Applications
| DC-DC Synchronous Rectifier | Motor Drive Half-Bridge |
|---|---|
Use Scenario: Secondary-side switch in 12 V input, 3.3 V/20 A buck converter for server VRMs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: 4.2 mΩ RDS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, improving full-load efficiency from 89 % to 93 %. | Use Scenario: High-side switch in 24 V brushed DC motor driver with PWM frequency ≥ 20 kHz. IC Role / Device Role / Timing Role: Power switch controlling motor voltage via gate-driven PWM. Use Value: 29 nC Qg at 4.5 V allows clean 20 kHz switching with standard gate drivers, minimizing dead-time loss. |
| Hot-Swap Controller FET | USB-C PD Load Switch |
Use Scenario: Inrush-limiting FET in 12 V telecom board with 500 ms soft-start requirement. IC Role / Device Role / Timing Role: Controlled turn-on switch managing supply ramp rate via gate resistor network. Use Value: 1.4–3.0 V VGS(th) ensures reliable gate control using simple RC-based soft-start circuitry. | Use Scenario: 5 V/3 A load switch in USB-C power delivery adapter output stage. IC Role / Device Role / Timing Role: Always-on power path switch with overcurrent protection interface. Use Value: 28 A rating provides 5× safety margin over 3 A load, supporting sustained 105 °C ambient operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 5.5 mΩ @ 10 V; Qg = 32 nC; SO-8 package | Slightly higher conduction loss and gate drive demand; same footprint | Acceptable where 1.3 mΩ higher RDS(on) is tolerable and gate driver can supply extra 3 nC |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 V; dual-N in SO-8; Qg = 22 nC @ 4.5 V | Lower RDS(on) but dual-device configuration; not pin-compatible | Preferred for space-constrained dual-switch designs, but requires PCB redesign |
Compared with IRF7470PBF, SI4842BDY-T1-GE3 delivers lower conduction loss and gate charge; versus DMN3025LSD-13, it offers single-device simplicity and identical pinout but trades off some on-resistance for layout flexibility.
Availability
SI4842BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, hot-swap circuits, and USB-C PD load switching requiring stable component supply and halogen-free compliance.
Supply support for SI4842BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics.
The Si4842BDY product line targets high-efficiency, high-density power conversion applications where low RDS(on), fast switching, and thermally robust packaging are critical.
FAQ
What is the maximum continuous drain current for SI4842BDY-T1-GE3 at 70 °C case temperature?
The SI4842BDY-T1-GE3 supports 23 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package under real-world PCB mounting conditions and must be validated against actual board layout and airflow. The SI4842BDY-T1-GE3 datasheet specifies this value explicitly for design margining.
Does SI4842BDY-T1-GE3 support 3.3 V logic-level gate drive?
Yes, SI4842BDY-T1-GE3 has a gate threshold voltage range of 1.4–3.0 V and achieves RDS(on) = 5.7 mΩ at VGS = 4.5 V, making it compatible with 3.3 V microcontrollers when used with appropriate gate buffering. The SI4842BDY-T1-GE3 does not guarantee full enhancement at 3.3 V alone, but functions reliably in 4.5 V drive systems common in modern logic interfaces.
What is the thermal resistance from junction to foot (RthJF) for SI4842BDY-T1-GE3?
The SI4842BDY-T1-GE3 has a typical junction-to-foot thermal resistance of 15 °C/W under steady-state conditions, per its Thermal Resistance Ratings table. This parameter applies to heat transfer from the die directly into the exposed drain paddle, enabling direct thermal coupling to internal PCB copper layers or heatsinks. The SI4842BDY-T1-GE3 datasheet confirms this value for thermal modeling accuracy.
Is SI4842BDY-T1-GE3 suitable for avalanche energy handling in inductive switching?
Yes, SI4842BDY-T1-GE3 is rated for 35 A single-pulse avalanche current and 61 mJ avalanche energy, confirming ruggedness in inductive load switching. These values are measured under standardized test conditions (L = 0.1 mH) and allow safe operation in flyback or relay-driving applications where unclamped inductive kick occurs. The SI4842BDY-T1-GE3 specification sheet lists these parameters in its Absolute Maximum Ratings section.
How does the body diode performance of SI4842BDY-T1-GE3 compare to standard MOSFETs?
The SI4842BDY-T1-GE3 features a fast, low-charge body diode with trr = 34 ns and Qrr = 31 nC, significantly better than typical general-purpose MOSFETs (often >100 ns trr). This enables efficient synchronous rectification without external diodes. The SI4842BDY-T1-GE3's body diode characteristics are fully specified and tested, supporting high-frequency DC-DC topologies.
SI4842BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3650 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4842BDY-T1-GE3 FAQ
1.How can I place an order for SI4842BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4842BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4842BDY-T1-GE3 reliable?
The price and inventory of SI4842BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4842BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI4842BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4842BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4842BDY-T1-GE3?
SI4842BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4842BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4842BDY-T1-GE3?
For technical support, including SI4842BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4842BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI4842BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI4842BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4842BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI4842BDY-T1-GE3?
All SI4842BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4842BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4842BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI4842BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI4842BDY-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
