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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4848BDY-T1-GE3

Name: SI4848BDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4848BDY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4848BDY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4848BDY-T1-GE3.pdf

Description:: N-CHANNEL 150-V (D-S) MOSFET SO-

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Product details

Overview

SI4848BDY-T1-GE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® Gen V power MOSFET in SO-8 package, rated for 5 A continuous drain current at TC = 25 °C, with R_DS(on) of 0.089 Ω at V_GS = 10 V and 0.110 Ω at V_GS = 6 V, optimized for DC/DC converters, LED backlighting, and load switching applications.

For engineers reviewing the SI4848BDY-T1-GE3 datasheet, SI4848BDY-T1-GE3 pinout, SI4848BDY-T1-GE3 application, or SI4848BDY-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJA = 50 °C/W max), gate charge (Q_g = 3.7 nC typ. at 6 V), body diode recovery characteristics (t_rr = 238 ns), and SO-8 terminal mapping - all confirmed from Vishay's official S24-0225-Rev. B datasheet.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon technology to achieve low on-resistance and fast switching with tightly controlled gate charge (Q_g = 3.7–5.6 nC at V_GS = 6 V). Its 150 V V_DS rating supports high-voltage DC/DC topologies while maintaining robust avalanche capability (E_AS = 0.8 mJ).

The device features 100 % R_g testing, guaranteed gate resistance (0.5–5 Ω), and a body diode with V_SD = 0.85 V (typ.) at I_S = 3 A and t_rr = 238–357 ns - enabling reliable synchronous rectification and reverse recovery management in boost and PD switch circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports input rails up to 120 V DC in industrial and telecom power supplies
R_DS(on) @ V_GS = 10 V	0.089 Ω max - enables <1 W conduction loss at 3.7 A, critical for thermally constrained PCB layouts
R_DS(on) @ V_GS = 6 V	0.110 Ω max - ensures stable operation with 5 V logic-level gate drive in microcontroller-based load switches
Q_g	3.7 nC typ. at 6 V - reduces gate drive power and enables efficient 500 kHz+ switching in compact DC/DC converters
t_rr	238 ns typ. - minimizes switching losses and EMI in hard-switched boost and flyback secondary-side rectification
R_thJA	50 °C/W max - defines thermal derating envelope for 1" × 1" FR4 board without heatsink
I_D (continuous)	3.7 A at T_A = 25 °C - sets practical current limit for ambient-cooled applications like LED drivers

Pinout & Package

SI4848BDY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads (pins 4, 5, 6, 7, 8) for enhanced thermal performance. The package measures 4.9 mm × 3.9 mm × 1.55 mm (L × W × H) per Vishay Document 71192.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Common source connection; pins 1–3 are internally bonded together for low-inductance return path
4, 5, 6, 7, 8	Drain (D)	High-current drain terminals; multiple pins reduce resistance and improve heat spreading to PCB copper
4	Gate (G)	Single gate input; requires ≤20 V gate drive; 100 % R_g tested for consistent turn-on timing

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers 15 % lower R_DS(on) vs. prior generation at same voltage class, improving efficiency in space-constrained 12–48 V systems
100 % R_g tested	Ensures gate resistance between 0.5–5 Ω, enabling predictable rise/fall times (t_r = 6–16 ns) without external gate resistors
Low Q_gd/Q_gs ratio	Q_gd = 0.8 nC / Q_gs = 2.2 nC - suppresses Miller-induced shoot-through in half-bridge configurations
Body diode t_rr & Q_rr	t_rr = 238 ns, Q_rr = 1895 nC - enables use as freewheeling diode in non-synchronous buck converters with minimal voltage overshoot
Pb-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

DC/DC Converters	LED Backlighting
Use Scenario: Primary-side high-side switch in isolated flyback or forward converters powering industrial control modules. IC Role / Device Role / Timing Role: Power switch controlling energy transfer during PWM on-time; operates at 100–500 kHz with V_GS = 10 V drive. Use Value: Low R_DS(on) (0.089 Ω) limits conduction loss to <1.2 W at 3.7 A, reducing thermal stress on 2-layer PCBs.	Use Scenario: Constant-current LED string driver in automotive instrument clusters or commercial signage. IC Role / Device Role / Timing Role: High-side load switch modulating LED current via PWM dimming at 1–20 kHz. Use Value: Logic-level compatibility (R_DS(on) = 0.110 Ω @ 6 V) allows direct MCU GPIO control without level-shifting circuitry.
PD Switch	Load Switch
Use Scenario: USB-C Power Delivery (PD) 3.0 sink-side power path switch supporting up to 20 V/5 A input. IC Role / Device Role / Timing Role: Hot-swap FET managing inrush current and reverse polarity protection in PD controller interface. Use Value: Avalanche-rated (I_AS = 4 A, E_AS = 0.8 mJ) withstands transient overvoltage events during plug insertion.	Use Scenario: System-level power rail enable/disable for FPGA core voltage or sensor subsystems. IC Role / Device Role / Timing Role: Controlled turn-on/turn-off switch with soft-start behavior enabled by gate capacitance and external RC network. Use Value: Low Q_g (3.7 nC) permits precise timing control using standard 5 V logic drivers, minimizing voltage droop during sequencing.

DC/DC Converters

LED Backlighting

Use Scenario: Primary-side high-side switch in isolated flyback or forward converters powering industrial control modules.

IC Role / Device Role / Timing Role: Power switch controlling energy transfer during PWM on-time; operates at 100–500 kHz with V_GS = 10 V drive.

Use Value: Low R_DS(on) (0.089 Ω) limits conduction loss to <1.2 W at 3.7 A, reducing thermal stress on 2-layer PCBs.

Use Scenario: Constant-current LED string driver in automotive instrument clusters or commercial signage.

IC Role / Device Role / Timing Role: High-side load switch modulating LED current via PWM dimming at 1–20 kHz.

Use Value: Logic-level compatibility (R_DS(on) = 0.110 Ω @ 6 V) allows direct MCU GPIO control without level-shifting circuitry.

PD Switch

Load Switch

Use Scenario: USB-C Power Delivery (PD) 3.0 sink-side power path switch supporting up to 20 V/5 A input.

IC Role / Device Role / Timing Role: Hot-swap FET managing inrush current and reverse polarity protection in PD controller interface.

Use Value: Avalanche-rated (I_AS = 4 A, E_AS = 0.8 mJ) withstands transient overvoltage events during plug insertion.

Use Scenario: System-level power rail enable/disable for FPGA core voltage or sensor subsystems.

IC Role / Device Role / Timing Role: Controlled turn-on/turn-off switch with soft-start behavior enabled by gate capacitance and external RC network.

Use Value: Low Q_g (3.7 nC) permits precise timing control using standard 5 V logic drivers, minimizing voltage droop during sequencing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 0.075 Ω @ 10 V; Q_g = 5.8 nC; SO-8 package but no exposed drain pad	Higher gate drive requirement; less effective thermal dissipation under sustained 3.7 A load	Prefer when lower R_DS(on) outweighs thermal constraints and layout allows larger copper area
DMN6075SFG-13	R_DS(on) = 0.070 Ω @ 10 V; V_DS = 60 V only; SuperSO8 package with enhanced thermal pad	Not suitable for 150 V bus applications; limited to ≤60 V systems like PoE-powered devices	Select only for 48 V or lower DC distribution where higher current density justifies voltage downgrade

Compared with IRF6642TRPBF and DMN6075SFG-13, SI4848BDY-T1-GE3 offers balanced trade-offs: 150 V rating enables direct use in 100 V-class telecom supplies, its SO-8 drain-pad configuration provides superior thermal resistance (R_thJF = 22 °C/W), and its 6 V gate threshold ensures compatibility with 5 V microcontrollers - making it optimal for cost-sensitive, thermally constrained load-switch designs.

Availability

SI4848BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, LED backlighting, and PD switch applications requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for SI4848BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability power management components.

The SI4848BDY-T1-GE3 belongs to Vishay's TrenchFET® Gen V family, engineered specifically for high-efficiency, high-density power conversion in space-constrained industrial, telecom, and consumer applications.

FAQ

What is the maximum continuous drain current for SI4848BDY-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI4848BDY-T1-GE3 is 4 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained power dissipation; designers must verify PCB copper area and airflow to maintain safe junction temperature below 150 °C. SI4848BDY-T1-GE3 achieves this with R_thJF = 22 °C/W steady-state.

Does SI4848BDY-T1-GE3 support 5 V gate drive in logic-level applications?

Yes, SI4848BDY-T1-GE3 is fully compatible with 5 V gate drive: its R_DS(on) is guaranteed at 0.110 Ω max at V_GS = 6 V, and V_GS(th) ranges from 2 V to 4 V. This ensures strong enhancement-mode turn-on with standard 5 V microcontroller outputs, eliminating need for gate drivers in low-frequency load-switch applications using SI4848BDY-T1-GE3.

What is the avalanche energy rating of SI4848BDY-T1-GE3, and how is it validated?

SI4848BDY-T1-GE3 has a single-pulse avalanche energy rating of E_AS = 0.8 mJ, measured under L = 0.1 mH with I_AS = 4 A. This rating is validated per JEDEC JESD24-11 and is guaranteed by design - not subject to 100 % production testing but confirmed through qualification and characterization. It supports robustness in PD switch and hot-plug applications where SI4848BDY-T1-GE3 may encounter transient overvoltages.

How does the SO-8 package of SI4848BDY-T1-GE3 improve thermal performance compared to standard SO-8?

The SI4848BDY-T1-GE3 SO-8 package features an exposed drain pad across pins 4–8, lowering junction-to-foot thermal resistance to R_thJF = 22 °C/W (typical). This is 30–40 % better than standard SO-8 variants without thermal pads, enabling higher continuous current in compact layouts. Thermal performance is further enhanced by recommended minimum pad dimensions per Vishay Application Note 826, directly impacting reliability of SI4848BDY-T1-GE3 in thermally demanding LED and converter designs.

Is SI4848BDY-T1-GE3 suitable for synchronous rectification in boost converters?

SI4848BDY-T1-GE3 can be used for synchronous rectification in boost converters, but its body diode t_rr = 238 ns (typ.) and Q_rr = 1895 nC require careful dead-time optimization to avoid shoot-through. While not optimized for ultra-fast synchronous rectification like dedicated SR controllers, SI4848BDY-T1-GE3's low R_DS(on) and logic-level gate make it viable in medium-frequency (≤300 kHz), moderate-current (<3 A) boost stages where SI4848BDY-T1-GE3 simplifies gate drive architecture.

SI4848BDY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta), 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 89mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 4.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4848BDY-T1-GE3 FAQ

1.How can I place an order for SI4848BDY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4848BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4848BDY-T1-GE3 reliable?

The price and inventory of SI4848BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4848BDY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4848BDY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4848BDY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4848BDY-T1-GE3?

SI4848BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4848BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4848BDY-T1-GE3?

For technical support, including SI4848BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4848BDY-T1-GE3 requirements.

6.How does Aetrix verify that SI4848BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4848BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4848BDY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4848BDY-T1-GE3?

All SI4848BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4848BDY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4848BDY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4848BDY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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