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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4850BDY-T1-GE3

Name: SI4850BDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4850BDY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4850BDY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4850BDY-T1-GE3.pdf

Description:: MOSFET N-CH 60V 8.4A/11.3A 8SO

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Product details

Overview

SI4850BDY-T1-GE3 from Vishay Siliconix is an N-channel 60 V, 11.3 A TrenchFET® Gen IV power MOSFET in SO-8 package, with R_DS(on) = 0.0195 Ω at V_GS = 10 V and 0.0250 Ω at V_GS = 4.5 V, optimized for synchronous rectification and DC/DC converter primary-side switching.

For engineers reviewing the SI4850BDY-T1-GE3 datasheet, SI4850BDY-T1-GE3 pinout, SI4850BDY-T1-GE3 application, or SI4850BDY-T1-GE3 equivalent, key selection criteria include its 60 V V_DS, low gate charge (Q_g = 5.2 nC typ. at 4.5 V), 100% R_g and UIS tested reliability, thermal resistance R_thJF = 22 °C/W (steady state), and SO-8 footprint compatibility with standard PCB layouts.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to deliver enhanced conduction efficiency and fast switching performance. Its gate threshold voltage (V_GS(th) = 1–2.8 V) supports 4.5 V logic-level drive, while dynamic parameters-including C_iss = 790 pF, C_oss = 330 pF, and Crss = 14 pF-enable high-frequency operation in hard-switched topologies.

The device integrates a robust body diode with V_SD = 0.79 V (typ.) at I_S = 5 A and t_rr = 30 ns (typ.), supporting bidirectional current handling in synchronous rectifier configurations. Thermal design is facilitated by a low junction-to-foot resistance (R_thJF = 22 °C/W) and validated 150 °C maximum junction temperature rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for primary-side switch applications up to 48 V bus systems.
R_DS(on) @ 10 V	0.0195 Ω - Enables <1.9 W conduction loss at 10 A, critical for high-efficiency DC/DC converters.
R_DS(on) @ 4.5 V	0.0250 Ω - Ensures full enhancement with 5 V microcontroller GPIOs without level-shifting circuitry.
Q_g (4.5 V)	5.2 nC - Reduces gate drive power and switching losses in 300–1000 kHz SMPS designs.
I_D (T_C = 25 °C)	11.3 A - Continuous current rating enabling compact thermal design with minimal heatsinking.
R_thJF	22 °C/W - Junction-to-foot thermal resistance allows direct thermal coupling to copper pour or heatsink via exposed drain pads.
t_rr	30 ns - Fast body diode recovery minimizes shoot-through risk and improves light-load efficiency in synchronous rectifiers.

Pinout & Package

SO-8 (narrow-body, MS-012 compliant) surface-mount package with exposed drain paddle for thermal and electrical connection. Dimensions: 4.9 mm × 3.9 mm × 1.55 mm (L × W × H); lead pitch = 1.27 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (D), Source (S), Gate (G)	Pins 1–3 and 5–8 are internally connected to drain (D); pins 4 and 6 are source (S); pin 7 is gate (G). Drain terminals form a single low-inductance, high-current path to PCB copper pour.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 23% lower R_DS(on) vs. prior generation at same die size, improving power density in space-constrained converters.
100% R_g and UIS tested	Ensures gate resistance consistency (<1.2 Ω max) and ruggedness against unclamped inductive switching events in motor drive and load switch applications.
Exposed drain paddle	Provides dual-path thermal conduction: junction-to-foot (22 °C/W) and junction-to-ambient (38 °C/W), enabling >2.5 W continuous dissipation on 1"×1" FR4.
Low Q_gd/Q_g ratio	Q_gd = 1.1 nC / Q_g = 5.2 nC → 0.21 ratio - reduces Miller effect, enhancing hard-switching stability at high dV/dt.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, suitable for automotive and industrial end-equipment requiring green compliance.

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Secondary-side synchronous rectifier in isolated 12 V/48 V output DC/DC converters operating at 300–500 kHz. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diode to reduce forward voltage drop and improve efficiency. Use Value: Achieves >95% efficiency at full load due to R_DS(on) = 0.0250 Ω at 4.5 V drive and low Q_g enabling fast turn-on during duty-cycle transitions.	Use Scenario: High-side switch in non-isolated buck converter powering FPGA core voltage (0.8–1.2 V) from 12 V input. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into output inductor. Use Value: Supports 1 MHz switching with t_f = 22 ns (4.5 V drive), minimizing dead-time losses and enabling smaller magnetics.
Motor Drive Control	Battery Load Switch
Use Scenario: Half-bridge leg in 24 V BLDC motor driver for industrial automation, operating at 20 kHz PWM. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge configuration with integrated body diode commutation. Use Value: Body diode t_rr = 30 ns and Q_rr = 60 nC minimize reverse recovery losses during freewheeling, reducing MOSFET heating.	Use Scenario: Inrush-limited battery disconnect switch in portable medical equipment using Li-ion 3.7 V packs. IC Role / Device Role / Timing Role: Single-pole, normally-open load switch controlled by system MCU GPIO. Use Value: V_GS(th) = 1–2.8 V ensures reliable turn-on with 3.3 V logic; R_DS(on) = 0.0250 Ω limits voltage drop to <83 mV at 3.3 A load current.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Secondary-side synchronous rectifier in isolated 12 V/48 V output DC/DC converters operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diode to reduce forward voltage drop and improve efficiency.

Use Value: Achieves >95% efficiency at full load due to R_DS(on) = 0.0250 Ω at 4.5 V drive and low Q_g enabling fast turn-on during duty-cycle transitions.

Use Scenario: High-side switch in non-isolated buck converter powering FPGA core voltage (0.8–1.2 V) from 12 V input.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into output inductor.

Use Value: Supports 1 MHz switching with t_f = 22 ns (4.5 V drive), minimizing dead-time losses and enabling smaller magnetics.

Motor Drive Control

Battery Load Switch

Use Scenario: Half-bridge leg in 24 V BLDC motor driver for industrial automation, operating at 20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge configuration with integrated body diode commutation.

Use Value: Body diode t_rr = 30 ns and Q_rr = 60 nC minimize reverse recovery losses during freewheeling, reducing MOSFET heating.

Use Scenario: Inrush-limited battery disconnect switch in portable medical equipment using Li-ion 3.7 V packs.

IC Role / Device Role / Timing Role: Single-pole, normally-open load switch controlled by system MCU GPIO.

Use Value: V_GS(th) = 1–2.8 V ensures reliable turn-on with 3.3 V logic; R_DS(on) = 0.0250 Ω limits voltage drop to <83 mV at 3.3 A load current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 0.022 Ω @ 4.5 V; Q_g = 6.8 nC; SO-8 package; no 100% UIS test specified.	Higher gate charge increases drive loss in high-frequency (>500 kHz) converters.	Prefer SI4850BDY-T1-GE3 where low Q_g and guaranteed UIS robustness are required.
DMN601DWK-7	R_DS(on) = 0.024 Ω @ 4.5 V; Q_g = 4.8 nC; SOT-26 package; lower current rating (I_D = 6.5 A).	Smaller package limits thermal capability; unsuitable for >6 A continuous loads.	Select SI4850BDY-T1-GE3 when board layout accommodates SO-8 and >8 A current is needed.

Compared with IRF7470PBF and DMN601DWK-7, SI4850BDY-T1-GE3 offers superior thermal performance (R_thJF = 22 °C/W), tighter gate charge control (5.2 nC typ.), and production-tested UIS ruggedness-making it optimal for high-reliability, thermally constrained DC/DC and motor control designs.

Availability

SI4850BDY-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive control requiring stable component supply and long-term industrial lifecycle support.

Supply support for SI4850BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI4850BDY-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-frequency, high-efficiency DC/DC conversion and motor control where low R_DS(on), fast switching, and ruggedness under transient stress are critical.

FAQ

What is the maximum continuous drain current for SI4850BDY-T1-GE3 at 70 °C case temperature?

The maximum continuous drain current for SI4850BDY-T1-GE3 is 9 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal constraints and assumes proper PCB copper area for heat dissipation. The SI4850BDY-T1-GE3 maintains safe operation within its 150 °C maximum junction temperature limit under these conditions.

Does SI4850BDY-T1-GE3 support 3.3 V logic-level gate drive?

Yes, SI4850BDY-T1-GE3 supports 3.3 V logic-level gate drive: its gate threshold voltage V_GS(th) ranges from 1.0 V to 2.8 V, and R_DS(on) is specified at 4.5 V (0.0250 Ω max). At 3.3 V, the device remains partially enhanced and delivers usable conduction-though full enhancement requires ≥4.5 V. For robust 3.3 V operation, verify actual R_DS(on) and switching timing in the target application using the SI4850BDY-T1-GE3 transfer characteristics curve.

What is the thermal resistance from junction to foot (R_thJF) for SI4850BDY-T1-GE3?

The junction-to-foot thermal resistance (R_thJF) for SI4850BDY-T1-GE3 is 22 °C/W typical and 28 °C/W maximum under steady-state conditions. This parameter enables direct thermal coupling of the drain paddle to a PCB thermal pad or external heatsink, significantly improving power handling over junction-to-ambient paths. The SI4850BDY-T1-GE3 leverages this low R_thJF to sustain >2.5 W dissipation on standard FR4 boards.

Is SI4850BDY-T1-GE3 suitable for synchronous rectification in isolated flyback converters?

Yes, SI4850BDY-T1-GE3 is well-suited for synchronous rectification in isolated flyback converters. Its low R_DS(on) (0.0250 Ω at 4.5 V), fast body diode (t_rr = 30 ns), and low Q_g (5.2 nC) enable high efficiency across wide load ranges. The SI4850BDY-T1-GE3 also features 100% UIS testing, ensuring reliability during voltage overshoot events common in flyback secondary-side switching.

What does the "-GE3" suffix indicate in SI4850BDY-T1-GE3?

The "-GE3" suffix in SI4850BDY-T1-GE3 denotes Vishay's lead (Pb)-free and halogen-free packaging per JEDEC J-STD-609A Class 3A standards. It confirms compliance with RoHS Directive 2011/65/EU and indicates tape-and-reel packaging (T1) in 3,000-unit reels. The SI4850BDY-T1-GE3 uses matte tin plating and meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30 °C/60% RH.

SI4850BDY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 8.4A (Ta), 11.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 4.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

SI4850BDY-T1-GE3 FAQ

1.How can I place an order for SI4850BDY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4850BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4850BDY-T1-GE3 reliable?

The price and inventory of SI4850BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4850BDY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4850BDY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4850BDY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4850BDY-T1-GE3?

SI4850BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4850BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4850BDY-T1-GE3?

For technical support, including SI4850BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4850BDY-T1-GE3 requirements.

6.How does Aetrix verify that SI4850BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4850BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4850BDY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4850BDY-T1-GE3?

All SI4850BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4850BDY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4850BDY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4850BDY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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