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Vishay Siliconix SI4850EY-T1
- Part No.:
- SI4850EY-T1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4850EY-T1.pdf
- Description:
- MOSFET N-CH 60V 6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,409
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Product details
Overview
SI4850EY-T1 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET in SO-8 package, rated for 60 V VDS, 0.022 Ω RDS(on) at VGS = 10 V, and 8.5 A continuous drain current at TA = 25 °C. It delivers fast switching with 18–27 nC total gate charge and supports operation up to 175 °C junction temperature in DC-DC converters and motor control stages.
For engineers reviewing the SI4850EY-T1 datasheet, SI4850EY-T1 pinout, SI4850EY-T1 application, or SI4850EY-T1 equivalent, key selection criteria include its low Qg/RDS(on) ratio, SO-8 thermal performance (RthJA = 75 °C/W steady-state), and verified avalanche energy rating of 11 mJ - critical for inductive load switching reliability.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for reduced gate charge and enhanced switching efficiency in medium-voltage, moderate-current applications. Its 60 V breakdown voltage and 0.031 Ω RDS(on) at 4.5 V VGS enable robust 3.3 V/5 V logic-level drive compatibility without gate boosting.
The device integrates a body diode with 0.8–1.2 V forward voltage at 1.7 A and exhibits 50–80 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck and half-bridge topologies where diode conduction loss must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Withstands up to 60 V drain-source potential before breakdown, suitable for 48 V bus and 24 V industrial systems. |
| RDS(on) @ VGS = 10 V | 0.022 Ω - Enables ≤1.1 W conduction loss at 7 A, reducing thermal stress in compact SO-8 layouts. |
| RDS(on) @ VGS = 4.5 V | 0.031 Ω - Ensures full enhancement with standard 5 V microcontroller GPIOs, eliminating need for level-shifting drivers. |
| Qg | 18–27 nC - Low gate charge minimizes driver power and enables >1 MHz switching in high-efficiency SMPS designs. |
| TJ max | 175 °C - Supports operation in sealed enclosures or high-ambient environments without derating below 7.2 A at 70 °C ambient. |
| EAS | 11 mJ - Rated single-pulse avalanche energy allows safe clamping of inductive kickback in relay/motor drive circuits. |
| ID (continuous) | 8.5 A @ TA = 25 °C - Delivers usable current headroom for transient loads while maintaining SO-8 thermal limits. |
Pinout & Package
SO-8 (MS-012) surface-mount package with exposed drain pad for thermal enhancement; dimensions per JEDEC MS-012: 4.9 mm × 3.9 mm × 1.55 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Seven parallel drain terminals connected internally to the exposed copper pad - provides low-inductance, high-current path and primary thermal conduction path to PCB. |
| 6 | Gate (G) | Single gate input with 0.5–2.4 Ω gate resistance - compatible with standard CMOS/TTL drivers and supports controlled turn-on/turn-off timing. |
| Source (S) | Source (S) | Terminals not assigned to pins; source connection made via internal die bonding to leadframe - requires external PCB trace routing to gate driver return and power ground. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables lower RDS(on) and Qg vs. planar MOSFETs - improves power density and reduces switching losses in space-constrained converters. |
| 175 °C maximum junction temperature | Extends usable lifetime in thermally aggressive environments (e.g., automotive under-hood, industrial PLC modules) without forced cooling. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmentally regulated end equipment and simplifies global compliance documentation. |
| Low Qgd/Qgs ratio (5.3/3.4 nC) | Reduces Miller plateau duration and improves immunity to dv/dt-induced false turn-on in high-side configurations. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V point-of-load regulator in networking equipment with 5 A output requirement. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500 kHz with 4.5 V gate drive from controller IC. Use Value: 0.031 Ω RDS(on) at 4.5 V ensures <0.8 W conduction loss at full load, enabling passive cooling on 2-layer PCB. | Use Scenario: H-bridge driver for 24 V, 3 A brushed motor in factory automation actuator. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed modulation at 20 kHz. Use Value: 11 mJ avalanche rating safely absorbs inductive flyback during PWM dead-time transitions without snubber circuitry. |
| LED Constant-Current Driver | Hot-Swap Controller FET |
Use Scenario: Dimmable 48 V LED string driver with analog/PWM dimming in architectural lighting fixture. IC Role / Device Role / Timing Role: Series pass element modulated by current-sense amplifier feedback loop. Use Value: 60 V VDS margin accommodates 48 V nominal bus plus 15 % line surge, ensuring long-term reliability. | Use Scenario: Inrush current limiter in 24 V backplane slot with hot-plug capability per IEEE 1621. IC Role / Device Role / Timing Role: Power-switching FET placed between connector and system rail, controlled by dedicated hot-swap IC. Use Value: 0.022 Ω RDS(on) limits insertion voltage drop to <160 mV at 7 A, meeting IEEE 1621 voltage sag requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N04L | 40 V VDS, 0.004 Ω RDS(on) @ 10 V, TO-252 package - lower RDS(on) but lower voltage rating and larger footprint. | Not suitable for 48 V systems; better for 12 V/24 V high-current battery-powered devices requiring minimal conduction loss. | Select only if system bus voltage ≤40 V and thermal design accommodates DPAK mounting. |
| ON Semiconductor NTMFS4C06NT1G | 60 V VDS, 0.025 Ω RDS(on) @ 10 V, SO-8 - slightly higher on-resistance and 22 nC Qg, same package and pinout. | Functionally interchangeable in existing SO-8 layouts; marginally lower efficiency at high frequency due to higher Qg. | Valid alternative when SI4850EY-T1 is unavailable; no PCB change required, but verify gate drive strength for 22 nC load. |
Compared with IPP040N04L and NTMFS4C06NT1G, the SI4850EY-T1 offers optimal balance of 60 V rating, 0.022 Ω RDS(on), and 18–27 nC Qg in SO-8 - making it preferred for 24–48 V industrial converters where voltage margin, thermal density, and switching speed are jointly constrained.
Availability
SI4850EY-T1 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and hot-swap controllers requiring stable component supply across industrial, networking, and embedded power applications.
Supply support for SI4850EY-T1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial and automotive markets.
The Si4850EY product line targets medium-voltage, medium-current switching applications demanding low gate charge, high thermal robustness, and halogen-free compliance - especially in space-constrained power stages.
FAQ
What is the maximum continuous drain current for SI4850EY-T1 at 70 °C ambient temperature?
The SI4850EY-T1 supports 7.1 A continuous drain current at TA = 70 °C with proper PCB copper area (1" × 1" FR4). This value derives from thermal derating based on its RthJA = 75 °C/W and 175 °C maximum junction temperature. At this condition, conduction loss remains within safe limits for SO-8 package reliability. Always verify layout thermal performance using Vishay's AN826 recommended pads.
Does SI4850EY-T1 support logic-level gate drive from a 3.3 V microcontroller?
The SI4850EY-T1 is not fully enhanced at 3.3 V - its gate threshold voltage ranges from 1 V to 3 V, and RDS(on) is specified only down to 4.5 V VGS (0.031 Ω). At 3.3 V, the device operates in linear region with significantly higher on-resistance and power dissipation. For reliable switching, use ≥4.5 V gate drive or add a gate driver IC to ensure full enhancement of SI4850EY-T1.
What is the avalanche rating of SI4850EY-T1 and how is it tested?
The SI4850EY-T1 has a single-pulse avalanche energy rating of 11 mJ, measured under standardized test conditions (IAS = 15 A, VDD = 60 V, TJ = 25 °C). This rating validates its ability to absorb inductive energy without failure during unclamped inductive switching events. The parameter is guaranteed by design per Vishay's qualification process and is not subject to 100 % production testing.
Is SI4850EY-T1 pin-compatible with other SO-8 N-channel MOSFETs like the Si4800DY?
No - the SI4850EY-T1 uses a multi-drain SO-8 configuration (pins 1,2,3,4,5,7,8 = Drain; pin 6 = Gate), whereas the Si4800DY follows standard SO-8 pinout (pins 1–4 = Source, pin 5 = Drain, pin 6 = Gate, pins 7–8 = Drain). Layout reuse is not possible without redesign. Always verify pin mapping using the official Vishay Si4850EY-T1 datasheet (Doc #71146) before board revision.
What thermal resistance values apply to SI4850EY-T1 in typical PCB mounting?
For SI4850EY-T1 mounted on a 1" × 1" FR4 board, the typical junction-to-ambient thermal resistance is 36 °C/W for t ≤ 10 s and 75 °C/W at steady state. Its junction-to-foot (drain) resistance is 17 °C/W steady-state - critical for estimating die temperature when the drain pad is soldered to a large copper pour. These values assume adherence to Vishay's recommended SO-8 pad layout per Application Note AN826.
SI4850EY-T1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4850EY-T1 FAQ
1.How can I place an order for SI4850EY-T1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4850EY-T1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4850EY-T1 reliable?
The price and inventory of SI4850EY-T1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4850EY-T1 is usually 5 days.
3.What payment methods are accepted for SI4850EY-T1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4850EY-T1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4850EY-T1?
SI4850EY-T1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4850EY-T1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4850EY-T1?
For technical support, including SI4850EY-T1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4850EY-T1 requirements.
6.How does Aetrix verify that SI4850EY-T1 is sourced from the original manufacturer or authorized distributors?
All SI4850EY-T1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4850EY-T1 meets industry standards.
7.What is the process for return or replacement of SI4850EY-T1?
All SI4850EY-T1 units undergo pre-shipment inspection (PSI). If there is an issue with SI4850EY-T1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4850EY-T1 part is unused and in its original packaging.
Return procedure for SI4850EY-T1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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