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Vishay Siliconix SI4862DY-T1-E3
- Part No.:
- SI4862DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI4862DY-T1-E3.pdf
- Description:
- MOSFET N-CH 16V 17A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,829
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Product details
Overview
SI4862DY-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 16 V drain-source voltage, with RDS(on) = 3.3 mΩ at VGS = 4.5 V and continuous drain current of 25 A at TA = 25 °C. It features low gate resistance (typ. 0.5 Ω), 100% Rg tested, and is optimized for synchronous rectification in DC-DC converters operating at low output voltages.
For engineers reviewing the SI4862DY-T1-E3 datasheet, SI4862DY-T1-E3 pinout, SI4862DY-T1-E3 application, or SI4862DY-T1-E3 equivalent, key selection criteria include its 2.5 V logic-level gate drive capability, thermal resistance RthJA = 67 °C/W (steady state), and SO-8 package compatibility with standard PCB footprints for high-density power stages.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and fast switching performance. Its gate threshold voltage (VGS(th)) is tightly specified at 0.6 V (min), enabling reliable turn-on with 2.5 V–4.5 V logic-level drivers. The device supports pulsed drain currents up to 60 A and integrates a body diode with forward voltage VSD = 0.75–1.1 V at IS = 2.9 A.
Thermal design is supported by a maximum junction-to-foot (drain) resistance of 16 °C/W and a steady-state junction-to-ambient rating of 80 °C/W. Dynamic parameters include total gate charge Qg = 48–70 nC and gate-drain charge Qgd = 8.9 nC, indicating efficient switching control with minimal Miller effect in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 16 V - Maximum blocking voltage for low-voltage synchronous rectification in buck converters and OR-ing circuits. |
| RDS(on) | 3.3 mΩ at VGS = 4.5 V - Enables <100 mW conduction loss at 25 A, critical for high-efficiency 3.3 V/1.8 V output rails. |
| ID (continuous) | 25 A at TA = 25 °C - Supports high-current power delivery in compact SO-8 footprint without forced air cooling. |
| Qg | 48–70 nC - Determines gate driver power requirement and switching speed; compatible with standard 1-A peak gate drivers. |
| VGS(th) | 0.6 V min - Ensures robust turn-on with 2.5 V microcontroller GPIOs or low-voltage PWM controllers. |
| RthJA | 67 °C/W (steady state) - Defines thermal derating curve; requires ≥1 in² copper pour for full 25 A operation at ambient ≤55 °C. |
| VSD | 0.75–1.1 V at IS = 2.9 A - Body diode forward drop impacts reverse recovery losses during dead-time conduction. |
Pinout & Package
SI4862DY-T1-E3 is housed in a standard SO-8 (narrow) surface-mount package per JEDEC MS-012, with exposed drain pads for thermal enhancement. Pin 1–8 are arranged in dual-row configuration with pins 1–4 on left side and 5–8 on right side (top view).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally connected to common drain node and exposed thermal pad - must be soldered to large copper area for thermal management. |
| 6 | Gate (G) | Control terminal requiring low-impedance gate drive path; sensitive to ringing due to low Rg (0.5–2.2 Ω). |
| Source (S) | Source (S) | Pin 6 is gate; source is internal connection to pins 1–4,5,7,8 via substrate - external source connection made through PCB trace to adjacent drain pins or dedicated source pad. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Enables 3.3 mΩ RDS(on) in SO-8, reducing conduction loss by >30% vs. planar MOSFETs at same voltage rating. |
| 2.5 V logic-level gate drive | Guarantees full enhancement at VGS ≥ 2.5 V, eliminating need for gate boosters in 3.3 V system designs. |
| 100% Rg tested | Ensures consistent gate resistance (0.5–2.2 Ω), critical for predictable switching timing and EMI control. |
| Halogen-free construction | Complies with IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated industrial end equipment. |
| Low Qgd/Qg ratio | Qgd = 8.9 nC / Qg ≈ 13% - minimizes Miller plateau duration, improving hard-switching efficiency and dV/dt immunity. |
Applications
| Server VRM Synchronous Rectifier | USB PD 3.0 Buck Converter |
|---|---|
Use Scenario: High-current, low-voltage output stage in 48 V–12 V intermediate bus converter feeding CPU/GPU VRMs. IC Role / Device Role / Timing Role: Primary synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 90%. Use Value: 3.3 mΩ RDS(on) cuts rectifier loss by ~65% vs. 20 mΩ Schottky, directly increasing full-load efficiency by 1.2–1.8%. | Use Scenario: Secondary-side synchronous rectifier in 20 V input / 5–20 V programmable output USB Power Delivery buck converter. IC Role / Device Role / Timing Role: Low-side switch conducting during bottom-half PWM cycle; body diode handles dead-time conduction. Use Value: 0.75 V VSD and fast trr (80–120 ns) minimize reverse recovery loss, enabling >95% efficiency at 3 A load. |
| Industrial PLC Power Module | Automotive ADAS Camera Power Supply |
Use Scenario: 5 V/3.3 V point-of-load regulator supplying I/O modules and communication interfaces in programmable logic controllers. IC Role / Device Role / Timing Role: High-side or low-side switch in integrated buck controller IC reference design, operating at 500 kHz–1 MHz. Use Value: 25 A continuous rating and 60 A pulsed capability support transient overloads without thermal shutdown in unventilated enclosures. | Use Scenario: Compact 12 V–3.3 V buck converter powering image sensor and ISP in automotive rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: Synchronous rectifier operating in automotive temperature range (−40 °C to 125 °C junction). Use Value: RDS(on) increases only 1.6× from 25 °C to 125 °C (per normalized curve), maintaining stable efficiency across full automotive thermal profile. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 4.5 mΩ @ 4.5 V; higher Qg = 85 nC; TO-252 package | Larger footprint and lower current density; less suitable for space-constrained SO-8 layouts | Choose IRF7470PBF only if board layout allows DPAK and thermal mass exceeds SO-8 capability. |
| DMN3026LSD-13 | RDS(on) = 3.2 mΩ @ 4.5 V; dual-N in SO-8; higher VDS = 30 V | Higher voltage rating adds unnecessary cost and capacitance for 16 V systems | Select DMN3026LSD-13 only when dual-N functionality or 30 V margin is explicitly required. |
Compared with IRF7470PBF and DMN3026LSD-13, SI4862DY-T1-E3 delivers optimal balance of ultra-low RDS(on), SO-8 footprint, and 2.5 V gate drive for 12–16 V synchronous rectification-without over-specifying voltage rating or sacrificing thermal performance in dense layouts.
Availability
SI4862DY-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, USB PD power adapters, and industrial PLC power modules requiring stable component supply, lead-free compliance, and verified thermal performance under sustained 20+ A loads.
Supply support for SI4862DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.
The Si4862DY product line targets high-efficiency, low-voltage DC-DC conversion, emphasizing logic-level gate drive, low RDS(on), and thermally enhanced SO-8 packaging for space-constrained power stages.
FAQ
What is the maximum continuous drain current rating for SI4862DY-T1-E3 at 70 °C ambient temperature?
The SI4862DY-T1-E3 supports 20 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package with standard FR4 mounting. To sustain 20 A, the PCB must provide ≥0.8 in² of 2-oz copper connected to the drain pad; actual current capability depends on airflow, layer stack-up, and nearby heat sources. The SI4862DY-T1-E3 datasheet confirms this value under "Continuous Drain Current (TJ = 150 °C)" conditions.
Does SI4862DY-T1-E3 support gate drive from a 2.5 V microcontroller GPIO?
Yes, SI4862DY-T1-E3 is specifically characterized for 2.5 V logic-level operation: its gate threshold voltage VGS(th) is guaranteed ≥0.6 V, and RDS(on) is specified at 5.5 mΩ max at VGS = 2.5 V and ID = 20 A. This ensures full enhancement and low conduction loss when driven directly by 2.5 V CMOS outputs. The SI4862DY-T1-E3 also exhibits low gate resistance (0.5–2.2 Ω), minimizing gate drive power and enabling fast turn-on with minimal external buffering.
What is the thermal resistance from junction to ambient for SI4862DY-T1-E3 in steady-state conditions?
The steady-state junction-to-ambient thermal resistance (RthJA) for SI4862DY-T1-E3 is 67 °C/W maximum, measured on a 1" × 1" FR4 board with 2 oz copper. This value assumes standard SO-8 mounting with all drain pins soldered to a common thermal pad. In practice, RthJA can be reduced to ~45 °C/W with 2 in² of internal/external copper pour. The SI4862DY-T1-E3 datasheet specifies both typical (29 °C/W for 10 s pulse) and maximum (80 °C/W) RthJA values under defined test conditions.
Is SI4862DY-T1-E3 halogen-free and RoHS compliant?
Yes, SI4862DY-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant (lead-free). The ordering code "-E3" explicitly denotes lead-free termination, and the Vishay datasheet states halogen-free status for this variant. The SI4862DY-T1-E3 is manufactured using halogen-free molding compounds and lead-free solderable terminations, meeting environmental requirements for industrial and consumer electronics without compromising reliability or thermal performance.
How does the body diode performance of SI4862DY-T1-E3 impact synchronous rectifier design?
The SI4862DY-T1-E3 body diode has VSD = 0.75–1.1 V at IS = 2.9 A and reverse recovery time trr = 80–120 ns, which directly affects dead-time conduction loss and EMI in synchronous buck topologies. A lower VSD reduces forward conduction loss during non-overlap intervals, while fast trr minimizes reverse recovery current spikes. These characteristics make the SI4862DY-T1-E3 well-suited for high-frequency (>500 kHz) synchronous rectification where body diode conduction is unavoidable during gate transition periods.
SI4862DY-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 16 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 25A, 4.5V
- Vgs(th) (Max) @ Id:
- 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI4862DY-T1-E3 FAQ
1.How can I place an order for SI4862DY-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI4862DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI4862DY-T1-E3 reliable?
The price and inventory of SI4862DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4862DY-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI4862DY-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4862DY-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI4862DY-T1-E3?
SI4862DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI4862DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI4862DY-T1-E3?
For technical support, including SI4862DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4862DY-T1-E3 requirements.
6.How does Aetrix verify that SI4862DY-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI4862DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4862DY-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI4862DY-T1-E3?
All SI4862DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4862DY-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI4862DY-T1-E3 part is unused and in its original packaging.
Return procedure for SI4862DY-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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