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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI4864DY-T1-E3

Name: SI4864DY-T1-E3
Brand: Vishay Siliconix
SKU: SI4864DY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI4864DY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI4864DY-T1-E3.pdf

Description:: MOSFET N-CH 20V 17A 8SO

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Product details

Overview

SI4864DY-T1-E3 from Vishay Siliconix is an N-channel 20-V TrenchFET® power MOSFET optimized for low-side synchronous buck DC/DC converters in servers and routers, featuring 3.5 mΩ R_DS(on) at V_GS = 4.5 V, 25 A continuous drain current (T_J = 150 °C), and PWM-optimized gate charge (Q_gd = 13.4 nC, R_g = 0.5–2.6 Ω).

For engineers reviewing the SI4864DY-T1-E3 datasheet, SI4864DY-T1-E3 pinout, SI4864DY-T1-E3 application, or SI4864DY-T1-E3 equivalent, key selection criteria include low R_DS(on) at 2.5 V drive, thermal resistance (R_thJA = 67 °C/W steady-state), SO-8 package compatibility, and halogen-free compliance per IEC 61249-2-21.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve enhanced conduction efficiency and fast switching performance. Its gate threshold voltage (V_GS(th) = 0.6–2.0 V) enables reliable turn-on with 2.5 V logic-level drive, while low Q_gd/Q_g ratio supports high-frequency PWM operation in point-of-load regulators.

The device integrates a body diode with V_SD = 0.70–1.1 V at I_S = 2.9 A and exhibits trr = 57–80 ns under dI/dt = 100 A/µs - critical for minimizing reverse recovery losses in synchronous rectification topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - maximum blocking voltage suitable for 12 V input bus systems with margin
R_DS(on)	3.5 mΩ at V_GS = 4.5 V, 25 A - enables <1 W conduction loss at 20 A in server VRMs
I_D (cont)	25 A at T_J = 150 °C - supports high-current, thermally constrained board layouts
Q_gd	13.4 nC - low gate-drain charge minimizes Miller-induced switching delay and shoot-through risk
R_thJA	67 °C/W (steady-state) - defines thermal derating on standard FR4; requires ≤ 1.6 W dissipation at 70 °C ambient
V_GS(th)	0.6–2.0 V - ensures robust turn-on with 2.5 V controller outputs without level-shifting
V_SD	0.70–1.1 V at I_S = 2.9 A - low forward drop reduces body-diode conduction loss during dead-time

Pinout & Package

SI4864DY-T1-E3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pads for thermal enhancement. Pin 1–8 follow JEDEC MS-012 outline with pins 1, 2, 3, 4 = Source, Source, Source, Gate; pins 5, 6, 7, 8 = Drain, Drain, Drain, Drain.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal parallel die; low-inductance return path for high di/dt switching
5, 6, 7, 8	Drain (D)	Parallel-connected drain terminals tied to exposed pad - primary heat-sink interface and power output node
4	Gate (G)	Single gate input; low R_g (0.5–2.6 Ω) enables fast, controlled turn-on with minimal external gate resistor

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 3.5 mΩ R_DS(on) at 4.5 V drive - reduces conduction loss by >30% vs. planar MOSFETs in same package
PWM-optimized Q_gd/Q_g	Q_gd = 13.4 nC / Q_g = 47–70 nC - improves switching efficiency and EMI behavior in 300–1000 kHz buck converters
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS and green procurement requirements for enterprise infrastructure
Low V_GS(th) tolerance	0.6–2.0 V range - ensures consistent turn-on across temperature (-55 to 150 °C) and process variation

Applications

Server Voltage Regulators	Network Router Power Stages
Use Scenario: High-current, multi-phase 12 V → 1.0–1.8 V conversion feeding CPU/GPU cores in rack-mounted servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in each buck phase leg, conducting during bottom-switch conduction interval. Use Value: 3.5 mΩ R_DS(on) at 4.5 V drive reduces conduction loss to <0.9 W at 20 A, enabling higher efficiency (>92%) and lower thermal density.	Use Scenario: Point-of-load regulation for ASIC/FPGA power domains in 1U network routers with space-constrained PCBs. IC Role / Device Role / Timing Role: Low-side switch in compact 500 kHz–1 MHz buck converter, operating with 2.5 V gate drive from integrated controller. Use Value: Guaranteed turn-on at V_GS = 2.5 V and low Q_gd allow stable operation without gate boosting, simplifying layout and reducing BOM count.
Telecom Base Station DC/DC	Industrial PLC Power Modules
Use Scenario: Intermediate bus conversion (48 V → 12 V) in distributed power architecture of macrocell base stations. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated forward or active-clamp forward topology. Use Value: Body diode V_SD = 0.70–1.1 V and trr = 57–80 ns minimize reverse recovery energy, improving light-load efficiency and thermal stability.	Use Scenario: 24 V input buck regulator supplying I/O and microcontroller rails in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Low-side switch in industrial-grade non-isolated DC/DC stage requiring extended temperature operation. Use Value: -55 to 150 °C T_J rating and 20 V V_DS margin ensure reliability under wide ambient swings and transient overvoltage conditions.

Server Voltage Regulators

Network Router Power Stages

Use Scenario: High-current, multi-phase 12 V → 1.0–1.8 V conversion feeding CPU/GPU cores in rack-mounted servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in each buck phase leg, conducting during bottom-switch conduction interval.

Use Value: 3.5 mΩ R_DS(on) at 4.5 V drive reduces conduction loss to <0.9 W at 20 A, enabling higher efficiency (>92%) and lower thermal density.

Use Scenario: Point-of-load regulation for ASIC/FPGA power domains in 1U network routers with space-constrained PCBs.

IC Role / Device Role / Timing Role: Low-side switch in compact 500 kHz–1 MHz buck converter, operating with 2.5 V gate drive from integrated controller.

Use Value: Guaranteed turn-on at V_GS = 2.5 V and low Q_gd allow stable operation without gate boosting, simplifying layout and reducing BOM count.

Telecom Base Station DC/DC

Industrial PLC Power Modules

Use Scenario: Intermediate bus conversion (48 V → 12 V) in distributed power architecture of macrocell base stations.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated forward or active-clamp forward topology.

Use Value: Body diode V_SD = 0.70–1.1 V and trr = 57–80 ns minimize reverse recovery energy, improving light-load efficiency and thermal stability.

Use Scenario: 24 V input buck regulator supplying I/O and microcontroller rails in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side switch in industrial-grade non-isolated DC/DC stage requiring extended temperature operation.

Use Value: -55 to 150 °C T_J rating and 20 V V_DS margin ensure reliability under wide ambient swings and transient overvoltage conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 4.0 mΩ @ 4.5 V; higher Q_gd = 17 nC; TO-252 package	Larger footprint, higher thermal resistance (R_thJA ≈ 80 °C/W), less suited for dense server VRMs	Prefer when board space allows DPAK and cost sensitivity outweighs efficiency targets
DMN2020LFG-7	R_DS(on) = 3.8 mΩ @ 4.5 V; SO-8 package; slightly higher V_GS(th) (0.7–2.5 V)	Narrower V_GS(th) distribution improves gate-drive margin at 2.5 V but increases risk of spurious turn-on near noise floor	Select when tighter V_GS(th) control is needed for ultra-low-voltage controllers, accepting minor R_DS(on) penalty

Compared with IRF7470PBF and DMN2020LFG-7, SI4864DY-T1-E3 delivers the lowest R_DS(on) in SO-8, optimal Q_gd/Q_g balance for high-frequency buck stages, and guaranteed 2.5 V drive capability - making it the preferred choice for thermally constrained, high-efficiency server and networking power designs.

Availability

SI4864DY-T1-E3 is available at Aetrix Electronics and suitable for server voltage regulators, network router power stages, and telecom base station DC/DC converters requiring stable component supply, lead-free compliance, and long-term industrial availability.

Supply support for SI4864DY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The Si4864DY product line targets high-efficiency, high-density DC/DC conversion in enterprise computing and communications infrastructure, emphasizing low R_DS(on), fast switching, and robust thermal design in standard surface-mount packages.

FAQ

What is the maximum continuous drain current rating for SI4864DY-T1-E3 at 70 °C ambient?

The SI4864DY-T1-E3 supports 20 A continuous drain current at T_A = 70 °C with appropriate PCB copper area (1" × 1" FR4). This rating assumes steady-state thermal equilibrium and accounts for R_thJA = 67 °C/W and P_D = 2.2 W limit at that ambient temperature. Derating is required above 70 °C ambient per the datasheet's thermal curves.

Does SI4864DY-T1-E3 support 2.5 V gate drive in production systems?

Yes, SI4864DY-T1-E3 is explicitly rated for 2.5 V gate drive: R_DS(on) = 4.7 mΩ is guaranteed at V_GS = 2.5 V and I_D = 20 A. Its V_GS(th) range (0.6–2.0 V) ensures reliable turn-on with 2.5 V logic-level controllers commonly used in server VRMs and networking PMICs.

What is the thermal resistance from junction to foot (R_thJF) for SI4864DY-T1-E3?

The SI4864DY-T1-E3 has a maximum junction-to-foot (drain) thermal resistance of 16 °C/W under steady-state conditions. This parameter reflects heat transfer from the silicon die directly into the exposed drain pad and is critical for estimating die temperature when using internal copper planes or external heatsinks attached to the SO-8 drain leads.

Is SI4864DY-T1-E3 halogen-free and RoHS-compliant?

Yes, SI4864DY-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant. The "-E3" suffix denotes lead-free (Pb-free) termination, and Vishay documentation confirms full halogen-free construction for this ordering variant, satisfying environmental requirements for enterprise and telecom equipment.

What is the typical total gate charge (Q_g) of SI4864DY-T1-E3 at 4.5 V drive?

The SI4864DY-T1-E3 exhibits a typical total gate charge (Q_g) of 47 nC at V_DS = 10 V, V_GS = 4.5 V, and I_D = 25 A. The maximum specified value is 70 nC, which informs gate driver sizing and switching loss calculations in high-frequency buck converter designs.

SI4864DY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 25A, 4.5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI4864DY-T1-E3 FAQ

1.How can I place an order for SI4864DY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4864DY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4864DY-T1-E3 reliable?

The price and inventory of SI4864DY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4864DY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI4864DY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4864DY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4864DY-T1-E3?

SI4864DY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4864DY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4864DY-T1-E3?

For technical support, including SI4864DY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4864DY-T1-E3 requirements.

6.How does Aetrix verify that SI4864DY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI4864DY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4864DY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI4864DY-T1-E3?

All SI4864DY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4864DY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4864DY-T1-E3 part is unused and in its original packaging.

Return procedure for SI4864DY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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