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Vishay Siliconix SI4864DY-T1-GE3

Part No.:
SI4864DY-T1-GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSI4864DY-T1-GE3.pdf
Description:
MOSFET N-CH 20V 17A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,007

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Product details

Overview

SI4864DY-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® power MOSFET optimized for low-side switching in synchronous buck DC/DC converters. It delivers 25 A continuous drain current at TJ = 150 °C, 3.5 mΩ RDS(on) at VGS = 4.5 V, and features halogen-free construction per IEC 61249-2-21 - used in server and router power stages.

For engineers reviewing the SI4864DY-T1-GE3 datasheet, SI4864DY-T1-GE3 pinout, SI4864DY-T1-GE3 application, or SI4864DY-T1-GE3 equivalent, key selection criteria include its 2.5 V gate threshold compatibility, PWM-optimized Qgd/Rg, SO-8 thermal performance (RthJA = 67 °C/W), and 20 V VDS rating for point-of-load regulation.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics. Its gate threshold voltage (0.6–2.0 V) enables direct drive from 2.5 V and 3.3 V controllers, and its 13.4 nC Qgd supports high-efficiency PWM operation in hard-switched topologies.

The device integrates a body diode with 0.70–1.1 V forward voltage at 2.9 A and exhibits 57–80 ns reverse recovery time. Thermal design is supported by RthJF = 13–16 °C/W (junction-to-foot), enabling efficient heat transfer through the exposed drain paddle in SO-8 packages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS20 V - Maximum blocking voltage for 12 V input rail applications with margin
RDS(on)3.5 mΩ @ VGS = 4.5 V, ID = 25 A - Enables <1 W conduction loss at 25 A
ID (continuous)25 A @ TJ = 150 °C - Supports high-current server VRMs without derating
Qgd13.4 nC - Low gate-drain charge minimizes Miller-induced switching delay
VGS(th)0.6–2.0 V - Compatible with 2.5 V logic-level gate drivers
RthJA67 °C/W (steady state) - Requires ≤ 2.2 W dissipation for 125 °C junction rise on FR4
VSD0.70–1.1 V @ IS = 2.9 A - Limits body diode conduction loss during dead-time

Pinout & Package

SI4864DY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain paddle for thermal enhancement. Pin 1–8 follow JEDEC MS-012 layout; pins 1, 2, 3, 4, 5, 6, 7, and 8 are Source, Source, Drain, Drain, Drain, Drain, Gate, and Source respectively.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 8SourceCommon source connection; electrically tied to internal substrate; requires low-impedance PCB pour
3, 4, 5, 6DrainHigh-current output node; thermally connected to exposed paddle; must be routed to ground plane
7GateControl input; sensitive to ESD; requires series resistor (≤ 6 Ω) to damp ringing per datasheet test condition

Key Features

FeatureDesign Value
TrenchFET® architectureEnables 3.5 mΩ RDS(on) at 4.5 V drive while maintaining robust short-circuit ruggedness
PWM-optimized Qgd/Rg13.4 nC Qgd and 0.5–2.6 Ω Rg reduce switching losses and improve duty-cycle linearity
Halogen-free constructionComplies with IEC 61249-2-21; eliminates brominated flame retardants without compromising reliability
Exposed drain paddleReduces RthJF to 13–16 °C/W, enabling >2× power handling vs. non-exposed SO-8 equivalents

Applications

Server VRM Low-Side SwitchRouter PoL Converter

Use Scenario: High-current, high-frequency synchronous buck stage supplying CPU core voltage (0.8–1.2 V) in dual-processor servers.

IC Role / Device Role / Timing Role: Low-side power switch conducting freewheeling current during high-side off-time; operates at 300–600 kHz.

Use Value: 3.5 mΩ RDS(on) limits I²R loss to <2.2 W at 25 A, reducing thermal load on multi-phase layouts.

Use Scenario: Point-of-load regulator delivering 3.3 V/15 A to network ASICs in 1U rack-mounted routers.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency at light-to-moderate loads.

Use Value: Body diode VSD ≤ 1.1 V and fast trr (57–80 ns) minimize reverse recovery loss during dead-time transitions.

Industrial PLC Power ModuleTelecom Base Station PSU

Use Scenario: 24 V input, 5 V/10 A output buck converter powering I/O modules in programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side switch in fixed-frequency (250 kHz) synchronous topology with 2.5 V gate drive from microcontroller GPIO.

Use Value: 0.6–2.0 V VGS(th) ensures reliable turn-on with 2.5 V logic, eliminating need for level-shifting circuitry.

Use Scenario: Intermediate bus converter (48 V → 12 V) in distributed power architecture for macrocell base stations.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating at 200 kHz with tight thermal constraints.

Use Value: RthJF = 13 °C/W allows >2.5 W dissipation with minimal footprint, supporting compact heatsinkless designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7470PBFRDS(on) = 4.0 mΩ @ 4.5 V; higher Qgd (16 nC); TO-252 packageLarger footprint; lower thermal conductivity than SO-8 exposed paddlePrefer SI4864DY-T1-GE3 for space-constrained, high-power-density designs requiring SO-8 mounting
DMN2020LSD-13RDS(on) = 3.8 mΩ @ 4.5 V; 8-pin SO-8 but no exposed drain; RthJA = 80 °C/WHigher junction temperature rise under same power; less suitable for sustained 25 A operationSI4864DY-T1-GE3 offers superior thermal performance and lower conduction loss in identical package outline

Compared with IRF7470PBF and DMN2020LSD-13, SI4864DY-T1-GE3 provides the lowest RDS(on) in SO-8, best thermal resistance via exposed drain, and tighter VGS(th) distribution - making it optimal for high-efficiency, high-reliability 20 V synchronous buck stages.

Availability

SI4864DY-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom power supplies, and industrial PLC power modules requiring stable component supply, halogen-free compliance, and SO-8 thermal performance.

Supply support for SI4864DY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics since 1962.

The Si4864DY product line targets high-efficiency, high-current DC/DC conversion in computing and communications infrastructure, emphasizing low RDS(on), fast switching, and robust thermal packaging for demanding 20 V applications.

FAQ

What is the maximum continuous drain current rating for SI4864DY-T1-GE3 at 70 °C ambient?

The SI4864DY-T1-GE3 supports 20 A continuous drain current at TA = 70 °C when mounted on a 1" × 1" FR4 board, per the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated ambient temperatures, and assumes proper PCB copper area for thermal conduction.

Does SI4864DY-T1-GE3 have a specified avalanche energy rating?

No, the SI4864DY-T1-GE3 datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (EAS). The device is rated for pulsed drain current (IDM = 60 A, 10 µs), but avalanche capability is not characterized or guaranteed per Vishay's documentation for this part number.

Is SI4864DY-T1-GE3 compatible with lead-free reflow soldering profiles?

Yes, SI4864DY-T1-GE3 is qualified for lead-free reflow soldering per J-STD-020. Its packaging meets MSL Level 1 rating, and the device withstands peak reflow temperatures up to 260 °C for 10 seconds, consistent with standard Pb-free process requirements.

What is the typical gate threshold voltage range for SI4864DY-T1-GE3 at 25 °C?

The SI4864DY-T1-GE3 has a typical gate threshold voltage (VGS(th)) range of 0.6 V to 2.0 V at TJ = 25 °C, measured at ID = 250 µA. This wide distribution supports reliable turn-on with 2.5 V logic-level drivers while maintaining noise immunity in noisy power environments.

How does the SO-8 package of SI4864DY-T1-GE3 improve thermal performance over standard SO-8 variants?

The SI4864DY-T1-GE3 uses an SO-8 package with an exposed drain paddle that thermally connects pins 3–6 to the PCB ground plane. This reduces RthJF to 13–16 °C/W (junction-to-foot), significantly improving heat transfer versus non-exposed SO-8 packages like DMN2020LSD-13, which exhibit RthJA ≥ 80 °C/W.

SI4864DY-T1-GE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
17A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
1.6W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

SI4864DY-T1-GE3 FAQ

1.How can I place an order for SI4864DY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI4864DY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI4864DY-T1-GE3 reliable?

The price and inventory of SI4864DY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI4864DY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI4864DY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI4864DY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI4864DY-T1-GE3?

SI4864DY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI4864DY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI4864DY-T1-GE3?

For technical support, including SI4864DY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI4864DY-T1-GE3 requirements.

6.How does Aetrix verify that SI4864DY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI4864DY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI4864DY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI4864DY-T1-GE3?

All SI4864DY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI4864DY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI4864DY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI4864DY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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